JPWO2023120715A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023120715A5
JPWO2023120715A5 JP2023569581A JP2023569581A JPWO2023120715A5 JP WO2023120715 A5 JPWO2023120715 A5 JP WO2023120715A5 JP 2023569581 A JP2023569581 A JP 2023569581A JP 2023569581 A JP2023569581 A JP 2023569581A JP WO2023120715 A5 JPWO2023120715 A5 JP WO2023120715A5
Authority
JP
Japan
Prior art keywords
field plate
semiconductor substrate
semiconductor device
well region
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023569581A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023120715A1 (https=
JP7694717B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/047683 external-priority patent/WO2023120715A1/ja
Publication of JPWO2023120715A1 publication Critical patent/JPWO2023120715A1/ja
Publication of JPWO2023120715A5 publication Critical patent/JPWO2023120715A5/ja
Application granted granted Critical
Publication of JP7694717B2 publication Critical patent/JP7694717B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023569581A 2021-12-23 2022-12-23 半導体装置 Active JP7694717B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021209023 2021-12-23
JP2021209023 2021-12-23
PCT/JP2022/047683 WO2023120715A1 (ja) 2021-12-23 2022-12-23 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023120715A1 JPWO2023120715A1 (https=) 2023-06-29
JPWO2023120715A5 true JPWO2023120715A5 (https=) 2024-03-12
JP7694717B2 JP7694717B2 (ja) 2025-06-18

Family

ID=86902821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023569581A Active JP7694717B2 (ja) 2021-12-23 2022-12-23 半導体装置

Country Status (5)

Country Link
US (1) US20240088214A1 (https=)
JP (1) JP7694717B2 (https=)
CN (1) CN117397038A (https=)
DE (1) DE112022001956T5 (https=)
WO (1) WO2023120715A1 (https=)

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936513B1 (https=) * 1970-05-22 1974-10-01
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
DE3220250A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
JPS5976466A (ja) * 1982-10-25 1984-05-01 Mitsubishi Electric Corp プレ−ナ形半導体装置
JP2812093B2 (ja) * 1992-09-17 1998-10-15 株式会社日立製作所 プレーナ接合を有する半導体装置
JP3111827B2 (ja) * 1994-09-20 2000-11-27 株式会社日立製作所 半導体装置及びそれを使った電力変換装置
JPH08306937A (ja) 1995-04-28 1996-11-22 Fuji Electric Co Ltd 高耐圧半導体装置
JP3796998B2 (ja) * 1999-02-19 2006-07-12 松下電器産業株式会社 高耐圧半導体装置
DE102007020658A1 (de) * 2007-04-30 2008-11-06 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zur Herstellung desselben
JP2009099863A (ja) * 2007-10-18 2009-05-07 Toshiba Corp 半導体装置、及び半導体装置の製造方法
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
JP5517688B2 (ja) * 2010-03-24 2014-06-11 三菱電機株式会社 半導体装置
KR20170017366A (ko) * 2015-08-06 2017-02-15 삼성전자주식회사 Mos 구조를 포함하는 반도체 소자
JP6784337B2 (ja) * 2017-11-16 2020-11-11 富士電機株式会社 半導体装置
DE112019008041B4 (de) * 2018-10-18 2026-02-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
JP7241574B2 (ja) * 2019-03-11 2023-03-17 株式会社東芝 半導体装置
US11450734B2 (en) * 2019-06-17 2022-09-20 Fuji Electric Co., Ltd. Semiconductor device and fabrication method for semiconductor device

Similar Documents

Publication Publication Date Title
JP4689977B2 (ja) 高スイッチングスピードのための横方向パワーｍｏｓｆｅｔ
US9041098B2 (en) Semiconductor device
JP5718627B2 (ja) 半導体装置
JP7207463B2 (ja) 半導体装置
US7339241B2 (en) FinFET structure with contacts
JP2020061412A (ja) 半導体装置
US20210202470A1 (en) Mosfet with integrated esd protection diode having anode electrode connection to trenched gates for increasing switch speed
JP7507756B2 (ja) 半導体装置
JP4791113B2 (ja) 半導体装置
JP7188230B2 (ja) 半導体装置
JPWO2023120715A5 (https=)
JP2021005692A (ja) 半導体装置
JP2011060883A (ja) 絶縁ゲートトランジスタ
JP2017126610A (ja) スイッチング素子
WO2023203894A1 (ja) 半導体装置
JPWO2023203894A5 (https=)
JPWO2023167161A5 (https=)
JP2022139078A5 (https=)
WO2018105310A1 (ja) 半導体装置
US20140091387A1 (en) Semiconductor device
JP7603914B2 (ja) 半導体装置
US20230145576A1 (en) Semiconductor device
JP2019057645A (ja) 半導体装置
JP6513932B2 (ja) 半導体装置
JP2025021163A5 (https=)