JPWO2023106087A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023106087A5
JPWO2023106087A5 JP2023566212A JP2023566212A JPWO2023106087A5 JP WO2023106087 A5 JPWO2023106087 A5 JP WO2023106087A5 JP 2023566212 A JP2023566212 A JP 2023566212A JP 2023566212 A JP2023566212 A JP 2023566212A JP WO2023106087 A5 JPWO2023106087 A5 JP WO2023106087A5
Authority
JP
Japan
Prior art keywords
semiconductor device
silicon carbide
layer
region
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023566212A
Other languages
English (en)
Japanese (ja)
Other versions
JP7795215B2 (ja
JPWO2023106087A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/043169 external-priority patent/WO2023106087A1/ja
Publication of JPWO2023106087A1 publication Critical patent/JPWO2023106087A1/ja
Publication of JPWO2023106087A5 publication Critical patent/JPWO2023106087A5/ja
Application granted granted Critical
Publication of JP7795215B2 publication Critical patent/JP7795215B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023566212A 2021-12-09 2022-11-22 半導体装置 Active JP7795215B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021199975 2021-12-09
JP2021199975 2021-12-09
PCT/JP2022/043169 WO2023106087A1 (ja) 2021-12-09 2022-11-22 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023106087A1 JPWO2023106087A1 (https=) 2023-06-15
JPWO2023106087A5 true JPWO2023106087A5 (https=) 2024-08-19
JP7795215B2 JP7795215B2 (ja) 2026-01-07

Family

ID=86730322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023566212A Active JP7795215B2 (ja) 2021-12-09 2022-11-22 半導体装置

Country Status (6)

Country Link
US (1) US20240332281A1 (https=)
JP (1) JP7795215B2 (https=)
CN (1) CN118369771A (https=)
DE (1) DE112022005863T5 (https=)
TW (1) TW202412116A (https=)
WO (1) WO2023106087A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121531774B (zh) * 2026-01-15 2026-04-28 杭州谱析光晶半导体科技有限公司 一种碳化硅-氮化镓异构集成高压功率器件结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007226475A (ja) 2006-02-22 2007-09-06 Fuji Electric Retail Systems Co Ltd 硬貨識別装置、硬貨識別方法および硬貨識別プログラム
JP5126733B2 (ja) 2006-09-29 2013-01-23 独立行政法人産業技術総合研究所 電界効果トランジスタ及びその製造方法
JP5319084B2 (ja) 2007-06-19 2013-10-16 ルネサスエレクトロニクス株式会社 半導体装置
JP5470705B2 (ja) 2007-12-28 2014-04-16 サンケン電気株式会社 半導体装置及びその製造方法
JP2010010262A (ja) 2008-06-25 2010-01-14 Panasonic Electric Works Co Ltd 半導体装置
JP5524462B2 (ja) 2008-08-06 2014-06-18 シャープ株式会社 半導体装置
DE102009018054B4 (de) 2009-04-21 2018-11-29 Infineon Technologies Austria Ag Lateraler HEMT und Verfahren zur Herstellung eines lateralen HEMT
JP2014036115A (ja) 2012-08-08 2014-02-24 Renesas Electronics Corp 半導体装置
JP6905395B2 (ja) 2017-06-16 2021-07-21 株式会社東芝 半導体装置

Similar Documents

Publication Publication Date Title
JP7719856B2 (ja) 空乏層を有するiii族窒化物デバイス
JP7425790B2 (ja) 垂直ゲートモジュールを有する横方向iii族窒化物デバイス
JP5758132B2 (ja) 半導体素子
US20230036698A1 (en) Reverse blocking gallium nitride high electron mobility transistor
KR101562879B1 (ko) 반도체 장치
JP5065616B2 (ja) 窒化物半導体素子
JP5668085B2 (ja) セグメント化ゲートを有するパワートランジスタ
US20110227132A1 (en) Field-effect transistor
US20100207164A1 (en) Field effect transistor
US20110012173A1 (en) Semiconductor device
US11908927B2 (en) Nitride semiconductor device
WO2020213291A1 (ja) 窒化物半導体装置およびその製造方法
WO2015125471A1 (ja) 電界効果トランジスタ
CN107851663A (zh) 半导体器件和用于制造半导体器件的方法
CN102623498A (zh) 半导体元件
US20250275170A1 (en) Nitride semiconductor device
US20200111903A1 (en) Semiconductor Device and Manufacturing Method Thereof
US20220199823A1 (en) Semiconductor device
TWI732813B (zh) 半導體裝置,電子部件,電子設備及用於製造半導體裝置之方法
JPWO2023106087A5 (https=)
CN119008670A (zh) 具有双栅结构的p-GaN栅极氮化镓高电子迁移率晶体管
KR102125386B1 (ko) 전력 반도체 소자 및 그 제조방법
KR102335490B1 (ko) 반도체 소자 및 그 제조 방법
US12426330B2 (en) Semiconductor device
US12527023B2 (en) Nitride semiconductor device