JPWO2023026868A1 - - Google Patents
Info
- Publication number
- JPWO2023026868A1 JPWO2023026868A1 JP2023518473A JP2023518473A JPWO2023026868A1 JP WO2023026868 A1 JPWO2023026868 A1 JP WO2023026868A1 JP 2023518473 A JP2023518473 A JP 2023518473A JP 2023518473 A JP2023518473 A JP 2023518473A JP WO2023026868 A1 JPWO2023026868 A1 JP WO2023026868A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023110702A JP7513164B2 (ja) | 2021-08-27 | 2023-07-05 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| JP2024097689A JP2024107472A (ja) | 2021-08-27 | 2024-06-17 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021138856 | 2021-08-27 | ||
| JP2021138856 | 2021-08-27 | ||
| PCT/JP2022/030631 WO2023026868A1 (ja) | 2021-08-27 | 2022-08-10 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023110702A Division JP7513164B2 (ja) | 2021-08-27 | 2023-07-05 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023026868A1 true JPWO2023026868A1 (https=) | 2023-03-02 |
| JP7315123B1 JP7315123B1 (ja) | 2023-07-26 |
| JPWO2023026868A5 JPWO2023026868A5 (https=) | 2023-08-02 |
Family
ID=85323200
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023518473A Active JP7315123B1 (ja) | 2021-08-27 | 2022-08-10 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| JP2023110702A Active JP7513164B2 (ja) | 2021-08-27 | 2023-07-05 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| JP2024097689A Pending JP2024107472A (ja) | 2021-08-27 | 2024-06-17 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023110702A Active JP7513164B2 (ja) | 2021-08-27 | 2023-07-05 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| JP2024097689A Pending JP2024107472A (ja) | 2021-08-27 | 2024-06-17 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US11829065B2 (https=) |
| JP (3) | JP7315123B1 (https=) |
| KR (2) | KR20240036734A (https=) |
| TW (2) | TWI824663B (https=) |
| WO (1) | WO2023026868A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220187699A1 (en) * | 2020-12-11 | 2022-06-16 | AGC Inc. | Reflective mask blank for euvl, reflective mask for euvl, and method of manufacturing reflective mask for euvl |
| KR20240036734A (ko) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| KR20250153856A (ko) | 2021-12-13 | 2025-10-27 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
| JP7392236B1 (ja) | 2022-07-05 | 2023-12-06 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| TW202542637A (zh) * | 2024-04-22 | 2025-11-01 | 日商Ａｇｃ股份有限公司 | 反射型光罩基底、反射型光罩基底之製造方法及反射型光罩之製造方法 |
| WO2025253899A1 (ja) * | 2024-06-03 | 2025-12-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
| WO2026009614A1 (ja) * | 2024-07-05 | 2026-01-08 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクの製造方法 |
| EP4730031A3 (en) * | 2024-10-15 | 2026-04-29 | Shin-Etsu Chemical Co., Ltd., | Reflective photomask blank, and method for manufacturing reflective photomask |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5233321B1 (https=) | 1971-07-10 | 1977-08-27 | ||
| JP4926523B2 (ja) * | 2006-03-31 | 2012-05-09 | Ｈｏｙａ株式会社 | 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法 |
| JP5233321B2 (ja) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法 |
| US8962220B2 (en) * | 2009-04-02 | 2015-02-24 | Toppan Printing Co., Ltd. | Reflective photomask and reflective photomask blank |
| WO2015144700A2 (en) * | 2014-03-25 | 2015-10-01 | Carl Zeiss Sms Ltd. | Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer |
| JP6845122B2 (ja) * | 2017-11-27 | 2021-03-17 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| KR102937232B1 (ko) * | 2018-05-25 | 2026-03-10 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법 |
| TWI811369B (zh) * | 2018-05-25 | 2023-08-11 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法 |
| JP7250511B2 (ja) * | 2018-12-27 | 2023-04-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| US12197120B2 (en) | 2019-02-07 | 2025-01-14 | Asml Netherlands B.V. | Patterning device and method of use thereof |
| JP7587378B2 (ja) * | 2019-09-30 | 2024-11-20 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP6929340B2 (ja) * | 2019-11-21 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法 |
| KR20240036734A (ko) * | 2021-08-27 | 2024-03-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 |
-
2022
- 2022-08-10 KR KR1020247008350A patent/KR20240036734A/ko active Pending
- 2022-08-10 WO PCT/JP2022/030631 patent/WO2023026868A1/ja not_active Ceased
- 2022-08-10 KR KR1020237012575A patent/KR102649175B1/ko active Active
- 2022-08-10 JP JP2023518473A patent/JP7315123B1/ja active Active
- 2022-08-12 TW TW111130366A patent/TWI824663B/zh active
- 2022-08-12 TW TW112143159A patent/TWI853742B/zh active
-
2023
- 2023-03-31 US US18/193,674 patent/US11829065B2/en active Active
- 2023-07-05 JP JP2023110702A patent/JP7513164B2/ja active Active
- 2023-10-20 US US18/382,269 patent/US12222640B2/en active Active
-
2024
- 2024-06-17 JP JP2024097689A patent/JP2024107472A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202514248A (zh) | 2025-04-01 |
| TWI824663B (zh) | 2023-12-01 |
| US20230251564A1 (en) | 2023-08-10 |
| KR20240036734A (ko) | 2024-03-20 |
| JP7315123B1 (ja) | 2023-07-26 |
| US11829065B2 (en) | 2023-11-28 |
| TW202309647A (zh) | 2023-03-01 |
| KR102649175B1 (ko) | 2024-03-20 |
| JP2024107472A (ja) | 2024-08-08 |
| TW202409713A (zh) | 2024-03-01 |
| WO2023026868A1 (ja) | 2023-03-02 |
| KR20230053728A (ko) | 2023-04-21 |
| US12222640B2 (en) | 2025-02-11 |
| US20240168370A1 (en) | 2024-05-23 |
| TWI853742B (zh) | 2024-08-21 |
| JP7513164B2 (ja) | 2024-07-09 |
| JP2023126714A (ja) | 2023-09-08 |
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