WO2023026868A1 - 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 - Google Patents

反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 Download PDF

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Publication number
WO2023026868A1
WO2023026868A1 PCT/JP2022/030631 JP2022030631W WO2023026868A1 WO 2023026868 A1 WO2023026868 A1 WO 2023026868A1 JP 2022030631 W JP2022030631 W JP 2022030631W WO 2023026868 A1 WO2023026868 A1 WO 2023026868A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
phase shift
reflective mask
shift film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/030631
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
駿也 瀧
啓明 岩岡
大二郎 赤木
一郎 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to KR1020247008350A priority Critical patent/KR20240036734A/ko
Priority to KR1020237012575A priority patent/KR102649175B1/ko
Priority to JP2023518473A priority patent/JP7315123B1/ja
Publication of WO2023026868A1 publication Critical patent/WO2023026868A1/ja
Priority to US18/193,674 priority patent/US11829065B2/en
Priority to JP2023110702A priority patent/JP7513164B2/ja
Priority to US18/382,269 priority patent/US12222640B2/en
Anticipated expiration legal-status Critical
Priority to JP2024097689A priority patent/JP2024107472A/ja
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Definitions

  • the phase shift film by configuring the phase shift film with a Ru compound that satisfies the above formula (1), the refractive index of the phase shift film is reduced and the processability of the phase shift film is improved. can.
  • the X-axis direction, the Y-axis direction, and the Z-axis direction are directions orthogonal to each other.
  • the Z-axis direction is a direction perpendicular to the first major surface 10a of the substrate 10 .
  • the X-axis direction is a direction perpendicular to the incident surface of EUV light (the surface containing the incident light beam and the reflected light beam).
  • the incident ray and the reflected ray are inclined in the Y-axis direction toward the Z-axis direction.
  • the incident light ray is inclined in the positive Y-axis direction toward the negative Z-axis direction
  • the reflected light ray is inclined in the positive Y-axis direction toward the positive Z-axis direction.
  • the film thickness of each layer and the number of repeating units of layers constituting the multilayer reflective film 11 can be appropriately selected according to the material of each layer and the reflectance to EUV light. If the multilayer reflective film 11 is a Mo/Si multilayer reflective film, the film thickness must be 2.0 to achieve a reflectance of 60% or more for EUV light with an incident angle ⁇ (see FIG. 3) of 6°. A Mo layer with a thickness of 3 ⁇ 0.1 nm and a Si layer with a thickness of 4.5 ⁇ 0.1 nm may be stacked such that the number of repeating units is 30 or more and 60 or less.
  • the multilayer reflective film 11 preferably has a reflectance of 60% or more for EUV light with an incident angle ⁇ of 6°. The reflectance is more preferably 65% or higher.
  • the first selectivity is preferably 10 or more, more preferably 30 or more.
  • the first selectivity is preferably 200 or less, more preferably 100 or less.
  • the film thickness of the buffer film 15 is preferably 1.0 nm or more and 10 nm or less. If the film thickness of the buffer film 15 is 1.0 nm or more, the buffer film 15 can protect the protective film 12 . If the thickness of the buffer film 15 is 10 nm or less, the thickness of the phase shift film 13 can be increased while suppressing an increase in the shadowing effect described below, and a sufficient phase shift effect can be obtained.
  • N 2 gas or a mixed gas of Ar gas and N 2 may be used as the sputtering gas.
  • the volume ratio (N 2 /(Ar+N 2 )) of N 2 gas in the sputtering gas is 0.05 or more and 1.0 or less.
  • the etching mask film 14 is made of aluminum (Al), hafnium (Hf), yttrium (Y), chromium (Cr), niobium (Nb), titanium (Ti), molybdenum (Mo), tantalum (Ta), and ruthenium (Ru). and at least one element selected from the group consisting of silicon (Si).
  • the etching mask film 14 may contain at least one element selected from the group consisting of oxygen (O), nitrogen (N), carbon (C) and boron (B) in addition to the above elements.
  • the etching mask film 14 preferably contains at least one element selected from the group consisting of O, N and B, more preferably at least one element selected from the group consisting of O and N.
  • the method for manufacturing the reflective mask blank 1 should include at least steps S101, S102 and S104.
  • the method of manufacturing the reflective mask blank 1 may further include a step of forming a functional film (not shown in FIG. 7).
  • the method of manufacturing the reflective mask blank 1 may include forming a buffer film 15 between the protective film 12 and the phase shift film 13 .

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2022/030631 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 Ceased WO2023026868A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020247008350A KR20240036734A (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR1020237012575A KR102649175B1 (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
JP2023518473A JP7315123B1 (ja) 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US18/193,674 US11829065B2 (en) 2021-08-27 2023-03-31 Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask
JP2023110702A JP7513164B2 (ja) 2021-08-27 2023-07-05 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
US18/382,269 US12222640B2 (en) 2021-08-27 2023-10-20 Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask
JP2024097689A JP2024107472A (ja) 2021-08-27 2024-06-17 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-138856 2021-08-27
JP2021138856 2021-08-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/193,674 Continuation US11829065B2 (en) 2021-08-27 2023-03-31 Reflective mask blank, reflective mask, method of manufacturing reflective mask blank, and method of manufacturing reflective mask

Publications (1)

Publication Number Publication Date
WO2023026868A1 true WO2023026868A1 (ja) 2023-03-02

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PCT/JP2022/030631 Ceased WO2023026868A1 (ja) 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Country Status (5)

Country Link
US (2) US11829065B2 (https=)
JP (3) JP7315123B1 (https=)
KR (2) KR20240036734A (https=)
TW (2) TWI824663B (https=)
WO (1) WO2023026868A1 (https=)

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WO2025225218A1 (ja) * 2024-04-22 2025-10-30 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

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US20220187699A1 (en) * 2020-12-11 2022-06-16 AGC Inc. Reflective mask blank for euvl, reflective mask for euvl, and method of manufacturing reflective mask for euvl
KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR20250153856A (ko) 2021-12-13 2025-10-27 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2026009614A1 (ja) * 2024-07-05 2026-01-08 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクの製造方法
EP4730031A3 (en) * 2024-10-15 2026-04-29 Shin-Etsu Chemical Co., Ltd., Reflective photomask blank, and method for manufacturing reflective photomask

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KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

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WO2020160851A1 (en) * 2019-02-07 2020-08-13 Asml Netherlands B.V. A patterning device and method of use thereof
WO2021100383A1 (ja) * 2019-11-21 2021-05-27 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法

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TW202514248A (zh) 2025-04-01
TWI824663B (zh) 2023-12-01
US20230251564A1 (en) 2023-08-10
KR20240036734A (ko) 2024-03-20
JP7315123B1 (ja) 2023-07-26
US11829065B2 (en) 2023-11-28
TW202309647A (zh) 2023-03-01
KR102649175B1 (ko) 2024-03-20
JP2024107472A (ja) 2024-08-08
TW202409713A (zh) 2024-03-01
JPWO2023026868A1 (https=) 2023-03-02
KR20230053728A (ko) 2023-04-21
US12222640B2 (en) 2025-02-11
US20240168370A1 (en) 2024-05-23
TWI853742B (zh) 2024-08-21
JP7513164B2 (ja) 2024-07-09
JP2023126714A (ja) 2023-09-08

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