KR20240036734A - 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 Download PDF

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Publication number
KR20240036734A
KR20240036734A KR1020247008350A KR20247008350A KR20240036734A KR 20240036734 A KR20240036734 A KR 20240036734A KR 1020247008350 A KR1020247008350 A KR 1020247008350A KR 20247008350 A KR20247008350 A KR 20247008350A KR 20240036734 A KR20240036734 A KR 20240036734A
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KR
South Korea
Prior art keywords
film
phase shift
reflective mask
shift film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247008350A
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English (en)
Korean (ko)
Inventor
슌야 다키
šœ야 다키
히로아키 이와오카
다이지로 아카기
이치로 이시카와
Original Assignee
에이지씨 가부시키가이샤
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Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20240036734A publication Critical patent/KR20240036734A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
KR1020247008350A 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법 Pending KR20240036734A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2021-138856 2021-08-27
JP2021138856 2021-08-27
PCT/JP2022/030631 WO2023026868A1 (ja) 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
KR1020237012575A KR102649175B1 (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020237012575A Division KR102649175B1 (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Publications (1)

Publication Number Publication Date
KR20240036734A true KR20240036734A (ko) 2024-03-20

Family

ID=85323200

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020247008350A Pending KR20240036734A (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR1020237012575A Active KR102649175B1 (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020237012575A Active KR102649175B1 (ko) 2021-08-27 2022-08-10 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Country Status (5)

Country Link
US (2) US11829065B2 (https=)
JP (3) JP7315123B1 (https=)
KR (2) KR20240036734A (https=)
TW (2) TWI824663B (https=)
WO (1) WO2023026868A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220187699A1 (en) * 2020-12-11 2022-06-16 AGC Inc. Reflective mask blank for euvl, reflective mask for euvl, and method of manufacturing reflective mask for euvl
KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
KR20250153856A (ko) 2021-12-13 2025-10-27 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
JP7392236B1 (ja) 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
TW202542637A (zh) * 2024-04-22 2025-11-01 日商Ａｇｃ股份有限公司 反射型光罩基底、反射型光罩基底之製造方法及反射型光罩之製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法
WO2026009614A1 (ja) * 2024-07-05 2026-01-08 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクの製造方法
EP4730031A3 (en) * 2024-10-15 2026-04-29 Shin-Etsu Chemical Co., Ltd., Reflective photomask blank, and method for manufacturing reflective photomask

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233321B1 (https=) 1971-07-10 1977-08-27

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JP4926523B2 (ja) * 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
US8962220B2 (en) * 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
WO2015144700A2 (en) * 2014-03-25 2015-10-01 Carl Zeiss Sms Ltd. Method and apparatus for generating a predetermined three-dimensional contour of an optical component and/or a wafer
JP6845122B2 (ja) * 2017-11-27 2021-03-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR102937232B1 (ko) * 2018-05-25 2026-03-10 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고, 반사형 마스크 및 반도체 장치의 제조 방법
TWI811369B (zh) * 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US12197120B2 (en) 2019-02-07 2025-01-14 Asml Netherlands B.V. Patterning device and method of use thereof
JP7587378B2 (ja) * 2019-09-30 2024-11-20 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

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JPS5233321B1 (https=) 1971-07-10 1977-08-27

Also Published As

Publication number Publication date
TW202514248A (zh) 2025-04-01
TWI824663B (zh) 2023-12-01
US20230251564A1 (en) 2023-08-10
JP7315123B1 (ja) 2023-07-26
US11829065B2 (en) 2023-11-28
TW202309647A (zh) 2023-03-01
KR102649175B1 (ko) 2024-03-20
JP2024107472A (ja) 2024-08-08
TW202409713A (zh) 2024-03-01
JPWO2023026868A1 (https=) 2023-03-02
WO2023026868A1 (ja) 2023-03-02
KR20230053728A (ko) 2023-04-21
US12222640B2 (en) 2025-02-11
US20240168370A1 (en) 2024-05-23
TWI853742B (zh) 2024-08-21
JP7513164B2 (ja) 2024-07-09
JP2023126714A (ja) 2023-09-08

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