JPWO2023026868A1 - - Google Patents

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Publication number
JPWO2023026868A1
JPWO2023026868A1 JP2023518473A JP2023518473A JPWO2023026868A1 JP WO2023026868 A1 JPWO2023026868 A1 JP WO2023026868A1 JP 2023518473 A JP2023518473 A JP 2023518473A JP 2023518473 A JP2023518473 A JP 2023518473A JP WO2023026868 A1 JPWO2023026868 A1 JP WO2023026868A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023518473A
Other versions
JP7315123B1 (ja
JPWO2023026868A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023026868A1 publication Critical patent/JPWO2023026868A1/ja
Priority to JP2023110702A priority Critical patent/JP2023126714A/ja
Application granted granted Critical
Publication of JP7315123B1 publication Critical patent/JP7315123B1/ja
Publication of JPWO2023026868A5 publication Critical patent/JPWO2023026868A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2023518473A 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 Active JP7315123B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023110702A JP2023126714A (ja) 2021-08-27 2023-07-05 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021138856 2021-08-27
JP2021138856 2021-08-27
PCT/JP2022/030631 WO2023026868A1 (ja) 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023110702A Division JP2023126714A (ja) 2021-08-27 2023-07-05 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Publications (3)

Publication Number Publication Date
JPWO2023026868A1 true JPWO2023026868A1 (ja) 2023-03-02
JP7315123B1 JP7315123B1 (ja) 2023-07-26
JPWO2023026868A5 JPWO2023026868A5 (ja) 2023-08-02

Family

ID=85323200

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023518473A Active JP7315123B1 (ja) 2021-08-27 2022-08-10 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP2023110702A Pending JP2023126714A (ja) 2021-08-27 2023-07-05 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023110702A Pending JP2023126714A (ja) 2021-08-27 2023-07-05 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Country Status (5)

Country Link
US (2) US11829065B2 (ja)
JP (2) JP7315123B1 (ja)
KR (2) KR102649175B1 (ja)
TW (1) TWI824663B (ja)
WO (1) WO2023026868A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220187699A1 (en) * 2020-12-11 2022-06-16 AGC Inc. Reflective mask blank for euvl, reflective mask for euvl, and method of manufacturing reflective mask for euvl
JP7272519B1 (ja) * 2021-12-13 2023-05-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233321B1 (ja) 1971-07-10 1977-08-27
JP4926523B2 (ja) * 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
WO2010113700A1 (ja) * 2009-04-02 2010-10-07 凸版印刷株式会社 反射型フォトマスクおよび反射型フォトマスクブランク
KR101913020B1 (ko) * 2014-03-25 2018-10-29 칼 짜이스 에스엠에스 엘티디 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치
JP6845122B2 (ja) * 2017-11-27 2021-03-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
TWI811369B (zh) * 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
JP7361027B2 (ja) 2018-05-25 2023-10-13 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US20220121105A1 (en) 2019-02-07 2022-04-21 Asml Netherlands B.V. A patterning device and method of use thereof
JP2021056502A (ja) * 2019-09-30 2021-04-08 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
US11829065B2 (en) 2023-11-28
US20240168370A1 (en) 2024-05-23
JP7315123B1 (ja) 2023-07-26
US20230251564A1 (en) 2023-08-10
TW202309647A (zh) 2023-03-01
KR20230053728A (ko) 2023-04-21
KR20240036734A (ko) 2024-03-20
JP2023126714A (ja) 2023-09-08
WO2023026868A1 (ja) 2023-03-02
TWI824663B (zh) 2023-12-01
KR102649175B1 (ko) 2024-03-20

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