JPWO2023112767A1 - - Google Patents

Info

Publication number
JPWO2023112767A1
JPWO2023112767A1 JP2023505423A JP2023505423A JPWO2023112767A1 JP WO2023112767 A1 JPWO2023112767 A1 JP WO2023112767A1 JP 2023505423 A JP2023505423 A JP 2023505423A JP 2023505423 A JP2023505423 A JP 2023505423A JP WO2023112767 A1 JPWO2023112767 A1 JP WO2023112767A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023505423A
Other versions
JP7272519B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2022/044842 external-priority patent/WO2023112767A1/ja
Priority to JP2023067812A priority Critical patent/JP7511136B2/ja
Application granted granted Critical
Publication of JP7272519B1 publication Critical patent/JP7272519B1/ja
Publication of JPWO2023112767A1 publication Critical patent/JPWO2023112767A1/ja
Priority to JP2024097688A priority patent/JP2024107471A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2023505423A 2021-12-13 2022-12-06 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 Active JP7272519B1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023067812A JP7511136B2 (ja) 2021-12-13 2023-04-18 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
JP2024097688A JP2024107471A (ja) 2021-12-13 2024-06-17 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2021201671 2021-12-13
JP2021201671 2021-12-13
JP2022108641 2022-07-05
JP2022108641 2022-07-05
PCT/JP2022/044842 WO2023112767A1 (ja) 2021-12-13 2022-12-06 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023067812A Division JP7511136B2 (ja) 2021-12-13 2023-04-18 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Publications (2)

Publication Number Publication Date
JP7272519B1 JP7272519B1 (ja) 2023-05-12
JPWO2023112767A1 true JPWO2023112767A1 (ja) 2023-06-22

Family

ID=86382544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023505423A Active JP7272519B1 (ja) 2021-12-13 2022-12-06 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Country Status (3)

Country Link
US (2) US11914284B2 (ja)
JP (1) JP7272519B1 (ja)
KR (2) KR20240008979A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101676514B1 (ko) * 2012-11-23 2016-11-29 한양대학교 산학협력단 단일층 흡수체 박막을 이용한 극자외선 노광 공정용 위상 반전 마스크
JP6301127B2 (ja) * 2013-12-25 2018-03-28 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP6381921B2 (ja) * 2014-01-30 2018-08-29 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP6499440B2 (ja) 2014-12-24 2019-04-10 Hoya株式会社 反射型マスクブランク及び反射型マスク
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
TWI811369B (zh) * 2018-05-25 2023-08-11 日商Ｈｏｙａ股份有限公司 反射型光罩基底、反射型光罩、以及反射型光罩及半導體裝置之製造方法
WO2019225736A1 (ja) * 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP6929340B2 (ja) * 2019-11-21 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体装置の製造方法
JP6929983B1 (ja) 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
KR20240036734A (ko) * 2021-08-27 2024-03-20 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법

Also Published As

Publication number Publication date
US11914284B2 (en) 2024-02-27
US20230350285A1 (en) 2023-11-02
JP7272519B1 (ja) 2023-05-12
US20240176224A1 (en) 2024-05-30
KR102624893B1 (ko) 2024-01-16
KR20230097180A (ko) 2023-06-30
KR20240008979A (ko) 2024-01-19

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