JPWO2022230862A1 - - Google Patents

Info

Publication number
JPWO2022230862A1
JPWO2022230862A1 JP2023517546A JP2023517546A JPWO2022230862A1 JP WO2022230862 A1 JPWO2022230862 A1 JP WO2022230862A1 JP 2023517546 A JP2023517546 A JP 2023517546A JP 2023517546 A JP2023517546 A JP 2023517546A JP WO2022230862 A1 JPWO2022230862 A1 JP WO2022230862A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023517546A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022230862A1 publication Critical patent/JPWO2022230862A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2023517546A 2021-04-28 2022-04-26 Pending JPWO2022230862A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021075900 2021-04-28
PCT/JP2022/018850 WO2022230862A1 (ja) 2021-04-28 2022-04-26 表面処理方法、ドライエッチング方法、クリーニング方法、半導体デバイスの製造方法及びエッチング装置

Publications (1)

Publication Number Publication Date
JPWO2022230862A1 true JPWO2022230862A1 (ja) 2022-11-03

Family

ID=83848428

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023517545A Pending JPWO2022230859A1 (ja) 2021-04-28 2022-04-26
JP2023517546A Pending JPWO2022230862A1 (ja) 2021-04-28 2022-04-26

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2023517545A Pending JPWO2022230859A1 (ja) 2021-04-28 2022-04-26

Country Status (6)

Country Link
EP (1) EP4307346A1 (ja)
JP (2) JPWO2022230859A1 (ja)
KR (2) KR20240000472A (ja)
CN (2) CN117157735A (ja)
TW (2) TW202303722A (ja)
WO (2) WO2022230862A1 (ja)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0933916A (ja) 1995-07-19 1997-02-07 Casio Comput Co Ltd 反射型カラー液晶表示素子
JP2004091829A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置
JP4260590B2 (ja) 2003-09-25 2009-04-30 東京エレクトロン株式会社 基板処理装置のクリーニング方法
JP5929386B2 (ja) * 2012-03-22 2016-06-08 セントラル硝子株式会社 成膜装置内の金属膜のドライクリーニング方法
US9773683B2 (en) * 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
JP2018060854A (ja) 2016-10-03 2018-04-12 Jsr株式会社 半導体素子用基板、エッチング方法、及びエッチング液
WO2018128079A1 (ja) * 2017-01-04 2018-07-12 セントラル硝子株式会社 ドライエッチング方法及びβ－ジケトン充填済み容器
EP3933892A4 (en) * 2019-03-01 2022-11-09 Central Glass Company, Limited DRY ETCHING METHOD, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND ETCHING DEVICE
JP7411926B2 (ja) 2019-11-08 2024-01-12 パナソニックＩｐマネジメント株式会社 水洗便器及び便器装置
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

Also Published As

Publication number Publication date
CN117157735A (zh) 2023-12-01
JPWO2022230859A1 (ja) 2022-11-03
EP4307346A1 (en) 2024-01-17
KR20240004298A (ko) 2024-01-11
CN117136426A (zh) 2023-11-28
TW202303722A (zh) 2023-01-16
TW202303721A (zh) 2023-01-16
KR20240000472A (ko) 2024-01-02
WO2022230859A1 (ja) 2022-11-03
WO2022230862A1 (ja) 2022-11-03

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