JPWO2021230294A1 - - Google Patents

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Publication number
JPWO2021230294A1
JPWO2021230294A1 JP2022522181A JP2022522181A JPWO2021230294A1 JP WO2021230294 A1 JPWO2021230294 A1 JP WO2021230294A1 JP 2022522181 A JP2022522181 A JP 2022522181A JP 2022522181 A JP2022522181 A JP 2022522181A JP WO2021230294 A1 JPWO2021230294 A1 JP WO2021230294A1
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JP
Japan
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JP2022522181A
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Japanese (ja)
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JPWO2021230294A5 (https=
JP7820293B2 (ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
JP2022522181A 2020-05-14 2021-05-12 光源モジュール Active JP7820293B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2026020939A JP2026066357A (ja) 2020-05-14 2026-02-12 半導体レーザモジュール及び光源モジュール

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020085548 2020-05-14
JP2020085548 2020-05-14
PCT/JP2021/018078 WO2021230294A1 (ja) 2020-05-14 2021-05-12 光源モジュール

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Publications (3)

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JPWO2021230294A1 true JPWO2021230294A1 (https=) 2021-11-18
JPWO2021230294A5 JPWO2021230294A5 (https=) 2023-01-31
JP7820293B2 JP7820293B2 (ja) 2026-02-25

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Country Status (4)

Country Link
US (1) US20230059013A1 (https=)
JP (2) JP7820293B2 (https=)
CN (5) CN121748920A (https=)
WO (1) WO2021230294A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020118421B4 (de) * 2020-07-13 2023-08-03 Focuslight Technologies Inc. Laservorrichtung
JP7723266B2 (ja) * 2021-10-19 2025-08-14 日亜化学工業株式会社 光源装置
JP7803192B2 (ja) * 2022-03-30 2026-01-21 住友大阪セメント株式会社 光デバイスとそれを用いた光送信装置
US20260106431A1 (en) * 2022-09-29 2026-04-16 Nichia Corporation Light emitting device and light emitting module
CN116086776B (zh) * 2023-01-19 2026-02-17 南京理工大学 一种准直光束发散角检测装置及发散角检测方法
US20250098378A1 (en) * 2023-09-15 2025-03-20 Advanced Semiconductor Engineering, Inc. Method for manufacturing optoelectronic structure and a package structure
WO2025173756A1 (ja) * 2024-02-13 2025-08-21 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置及び半導体レーザ装置の製造方法

Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253783A (ja) * 2003-01-31 2004-09-09 Fuji Photo Film Co Ltd レーザモジュール
JP2006054366A (ja) * 2004-08-13 2006-02-23 Fuji Photo Film Co Ltd レーザモジュール
JP2006066875A (ja) * 2004-07-26 2006-03-09 Fuji Photo Film Co Ltd レーザモジュール
JP2006126272A (ja) * 2004-10-26 2006-05-18 Nippon Electric Glass Co Ltd 光学用キャップ部品
JP2006301352A (ja) * 2005-04-21 2006-11-02 Moritex Corp レンズキャップ
JP2007025431A (ja) * 2005-07-20 2007-02-01 Fujifilm Holdings Corp レーザモジュール
JP2007163947A (ja) * 2005-12-15 2007-06-28 Fujifilm Corp 合波光学系
JP2011066394A (ja) * 2009-08-18 2011-03-31 Mitsubishi Electric Corp 光源装置、及び光源装置の製造方法
JP2013235943A (ja) * 2012-05-08 2013-11-21 Furukawa Electric Co Ltd:The 半導体レーザモジュール
CN104808299A (zh) * 2015-05-08 2015-07-29 福州宏旭科技有限公司 一种用于光纤通讯的多波长组件
US20160126704A1 (en) * 2013-05-28 2016-05-05 Osram Opto Semiconductors Gmbh Optoelectronic component having a housing with a plurality of openings
JP2016219779A (ja) * 2015-05-20 2016-12-22 日亜化学工業株式会社 発光装置
JP2017054883A (ja) * 2015-09-08 2017-03-16 シャープ株式会社 光学素子、光学装置、および投影装置
JP2017201684A (ja) * 2016-04-28 2017-11-09 日亜化学工業株式会社 発光装置の製造方法
CN107479145A (zh) * 2017-07-21 2017-12-15 成都聚芯光科通信设备有限责任公司 利于提高耦合效率的光收发模块组件
CN107526134A (zh) * 2017-07-21 2017-12-29 成都聚芯光科通信设备有限责任公司 适用于光纤通讯技术领域的多波长复用结构
WO2018229992A1 (ja) * 2017-06-16 2018-12-20 京セラ株式会社 光コネクタモジュール
WO2019207976A1 (ja) * 2018-04-26 2019-10-31 ソニー株式会社 光通信コネクタ、光送信器、光受信器、光通信システム及び光通信ケーブル
WO2020036053A1 (ja) * 2018-08-15 2020-02-20 ソニー株式会社 発光装置および投射型表示装置
WO2020121769A1 (ja) * 2018-12-13 2020-06-18 ソニー株式会社 光コネクタ、光ケーブルおよび電子機器
JP2020194955A (ja) * 2019-05-22 2020-12-03 日亜化学工業株式会社 光源ユニット
WO2021112248A1 (ja) * 2019-12-06 2021-06-10 古河電気工業株式会社 発光装置、光源ユニット、光源装置、および光ファイバレーザ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4986634A (en) * 1988-08-26 1991-01-22 Fuji Photo Film Co., Ltd. Beam-combining laser beam source device
US6546030B2 (en) * 2000-06-29 2003-04-08 Fuji Photo Film Co., Ltd. Semiconductor laser unit employing an inorganic adhesive
JP2005203940A (ja) * 2004-01-14 2005-07-28 Matsushita Electric Ind Co Ltd 通信装置およびプログラム
JP2006171348A (ja) * 2004-12-15 2006-06-29 Nippon Steel Corp 半導体レーザ装置
JP5042580B2 (ja) * 2006-09-29 2012-10-03 富士フイルム株式会社 半導体レーザ光源ユニット
US9437508B2 (en) * 2012-05-15 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing semiconductor device and semiconductor device
WO2014087726A1 (ja) * 2012-12-03 2014-06-12 三菱電機株式会社 半導体レーザ装置
JP5892918B2 (ja) * 2012-12-14 2016-03-23 三菱電機株式会社 半導体レーザ装置およびレーザ光発生方法
JP5920254B2 (ja) * 2013-03-13 2016-05-18 ウシオ電機株式会社 半導体レーザ装置
US9525269B2 (en) * 2014-11-22 2016-12-20 TeraDiode, Inc. Wavelength beam combining laser systems utilizing etalons
JP7277737B2 (ja) * 2018-09-06 2023-05-19 日亜化学工業株式会社 発光装置
US11296481B2 (en) * 2019-01-09 2022-04-05 Leonardo Electronics Us Inc. Divergence reshaping array
EP3687008B1 (en) * 2019-01-24 2022-01-19 Nichia Corporation Light source unit
CN113348547B (zh) * 2019-02-04 2025-01-21 索尼集团公司 半导体发光装置
EP4084239A4 (en) * 2019-12-26 2024-01-10 Nichia Corporation Laser light source

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253783A (ja) * 2003-01-31 2004-09-09 Fuji Photo Film Co Ltd レーザモジュール
JP2006066875A (ja) * 2004-07-26 2006-03-09 Fuji Photo Film Co Ltd レーザモジュール
JP2006054366A (ja) * 2004-08-13 2006-02-23 Fuji Photo Film Co Ltd レーザモジュール
JP2006126272A (ja) * 2004-10-26 2006-05-18 Nippon Electric Glass Co Ltd 光学用キャップ部品
JP2006301352A (ja) * 2005-04-21 2006-11-02 Moritex Corp レンズキャップ
JP2007025431A (ja) * 2005-07-20 2007-02-01 Fujifilm Holdings Corp レーザモジュール
JP2007163947A (ja) * 2005-12-15 2007-06-28 Fujifilm Corp 合波光学系
JP2011066394A (ja) * 2009-08-18 2011-03-31 Mitsubishi Electric Corp 光源装置、及び光源装置の製造方法
JP2013235943A (ja) * 2012-05-08 2013-11-21 Furukawa Electric Co Ltd:The 半導体レーザモジュール
US20160126704A1 (en) * 2013-05-28 2016-05-05 Osram Opto Semiconductors Gmbh Optoelectronic component having a housing with a plurality of openings
CN104808299A (zh) * 2015-05-08 2015-07-29 福州宏旭科技有限公司 一种用于光纤通讯的多波长组件
JP2016219779A (ja) * 2015-05-20 2016-12-22 日亜化学工業株式会社 発光装置
JP2017054883A (ja) * 2015-09-08 2017-03-16 シャープ株式会社 光学素子、光学装置、および投影装置
JP2017201684A (ja) * 2016-04-28 2017-11-09 日亜化学工業株式会社 発光装置の製造方法
WO2018229992A1 (ja) * 2017-06-16 2018-12-20 京セラ株式会社 光コネクタモジュール
CN107479145A (zh) * 2017-07-21 2017-12-15 成都聚芯光科通信设备有限责任公司 利于提高耦合效率的光收发模块组件
CN107526134A (zh) * 2017-07-21 2017-12-29 成都聚芯光科通信设备有限责任公司 适用于光纤通讯技术领域的多波长复用结构
WO2019207976A1 (ja) * 2018-04-26 2019-10-31 ソニー株式会社 光通信コネクタ、光送信器、光受信器、光通信システム及び光通信ケーブル
WO2020036053A1 (ja) * 2018-08-15 2020-02-20 ソニー株式会社 発光装置および投射型表示装置
WO2020121769A1 (ja) * 2018-12-13 2020-06-18 ソニー株式会社 光コネクタ、光ケーブルおよび電子機器
JP2020194955A (ja) * 2019-05-22 2020-12-03 日亜化学工業株式会社 光源ユニット
WO2021112248A1 (ja) * 2019-12-06 2021-06-10 古河電気工業株式会社 発光装置、光源ユニット、光源装置、および光ファイバレーザ

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