JPWO2021200328A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2021200328A5
JPWO2021200328A5 JP2022511951A JP2022511951A JPWO2021200328A5 JP WO2021200328 A5 JPWO2021200328 A5 JP WO2021200328A5 JP 2022511951 A JP2022511951 A JP 2022511951A JP 2022511951 A JP2022511951 A JP 2022511951A JP WO2021200328 A5 JPWO2021200328 A5 JP WO2021200328A5
Authority
JP
Japan
Prior art keywords
film
semiconductor laser
nitride semiconductor
dielectric film
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022511951A
Other languages
English (en)
Japanese (ja)
Other versions
JP7708740B2 (ja
JPWO2021200328A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2021/011639 external-priority patent/WO2021200328A1/ja
Publication of JPWO2021200328A1 publication Critical patent/JPWO2021200328A1/ja
Publication of JPWO2021200328A5 publication Critical patent/JPWO2021200328A5/ja
Priority to JP2025112751A priority Critical patent/JP2025129325A/ja
Application granted granted Critical
Publication of JP7708740B2 publication Critical patent/JP7708740B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

JP2022511951A 2020-03-30 2021-03-22 窒化物半導体レーザ素子 Active JP7708740B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025112751A JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060225 2020-03-30
JP2020060225 2020-03-30
PCT/JP2021/011639 WO2021200328A1 (ja) 2020-03-30 2021-03-22 窒化物半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025112751A Division JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JPWO2021200328A1 JPWO2021200328A1 (https=) 2021-10-07
JPWO2021200328A5 true JPWO2021200328A5 (https=) 2024-04-02
JP7708740B2 JP7708740B2 (ja) 2025-07-15

Family

ID=77928125

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022511951A Active JP7708740B2 (ja) 2020-03-30 2021-03-22 窒化物半導体レーザ素子
JP2025112751A Pending JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025112751A Pending JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Country Status (3)

Country Link
US (1) US20230019645A1 (https=)
JP (2) JP7708740B2 (https=)
WO (1) WO2021200328A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024004677A1 (https=) * 2022-06-28 2024-01-04

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218523A (ja) * 2007-02-28 2008-09-18 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
US7668218B2 (en) * 2007-02-20 2010-02-23 Nichia Corporation Nitride semiconductor laser element
JP2008244454A (ja) * 2007-02-26 2008-10-09 Toshiba Corp 半導体レーザ装置
JPWO2009147853A1 (ja) * 2008-06-06 2011-10-27 パナソニック株式会社 半導体発光素子
JP2010153810A (ja) * 2008-11-21 2010-07-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子および光ピックアップ装置
JP2011009374A (ja) 2009-06-24 2011-01-13 Panasonic Corp 窒化物半導体レーザ
JP2012109499A (ja) * 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
US8737445B2 (en) * 2012-04-04 2014-05-27 Osram Opto Semiconductors Gmbh Laser diode assembly
JP5491679B1 (ja) * 2012-06-29 2014-05-14 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) * 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
JP7296934B2 (ja) * 2018-02-14 2023-06-23 ヌヴォトンテクノロジージャパン株式会社 窒化物半導体レーザ素子及び照明光源モジュール

Similar Documents

Publication Publication Date Title
US7190524B2 (en) Process for fabrication of high reflectors by reversal of layer sequence and application thereof
KR101234986B1 (ko) 다중 막 와이어 그리드 편광 장치
JP2004296903A5 (https=)
JPS62229106A (ja) 光導波路
US20040008928A1 (en) Apparatus and method employing multilayer thin-film stacks for spatially shifting light
JP7696887B2 (ja) 半導体レーザ素子
JPWO2021187081A5 (https=)
WO2020170675A1 (ja) 垂直共振器型発光素子
JPWO2021200328A5 (https=)
US20150022893A1 (en) Diffraction Grating and Method for the Production Thereof
JP2010219436A5 (https=)
JP4210690B2 (ja) 面発光素子
JP2025129325A (ja) 窒化物半導体レーザ素子
JP2003318094A (ja) 露光装置用反射鏡および露光装置ならびに、それらを用いて製造される半導体デバイス
CN110908129A (zh) 一种合束光学装置
JP4273431B2 (ja) 垂直共振器型発光ダイオード
JP7183484B1 (ja) 光半導体装置の製造方法及び光半導体装置用反射防止膜の設計方法
US20240069248A1 (en) Anti-Reflective Optical Structures for Optical Systems
CN1767284A (zh) 半导体激光器
JP2001196685A (ja) 半導体光素子装置
JP2003101126A (ja) 半導体レーザ装置の製造方法及び半導体レーザ装置
JPH09129979A (ja) 半導体レーザ装置
US20240162201A1 (en) Micro semiconductor device and micro semiconductor structure
US20100303116A1 (en) Semiconductor laser device and optical apparatus employing the same
KR100870949B1 (ko) 반도체 레이저장치