JP7708740B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子

Info

Publication number
JP7708740B2
JP7708740B2 JP2022511951A JP2022511951A JP7708740B2 JP 7708740 B2 JP7708740 B2 JP 7708740B2 JP 2022511951 A JP2022511951 A JP 2022511951A JP 2022511951 A JP2022511951 A JP 2022511951A JP 7708740 B2 JP7708740 B2 JP 7708740B2
Authority
JP
Japan
Prior art keywords
film
dielectric film
dielectric
semiconductor laser
nitride semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022511951A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021200328A5 (https=
JPWO2021200328A1 (https=
Inventor
英夫 北川
真治 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Publication of JPWO2021200328A1 publication Critical patent/JPWO2021200328A1/ja
Publication of JPWO2021200328A5 publication Critical patent/JPWO2021200328A5/ja
Priority to JP2025112751A priority Critical patent/JP2025129325A/ja
Application granted granted Critical
Publication of JP7708740B2 publication Critical patent/JP7708740B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2022511951A 2020-03-30 2021-03-22 窒化物半導体レーザ素子 Active JP7708740B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025112751A JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020060225 2020-03-30
JP2020060225 2020-03-30
PCT/JP2021/011639 WO2021200328A1 (ja) 2020-03-30 2021-03-22 窒化物半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025112751A Division JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JPWO2021200328A1 JPWO2021200328A1 (https=) 2021-10-07
JPWO2021200328A5 JPWO2021200328A5 (https=) 2024-04-02
JP7708740B2 true JP7708740B2 (ja) 2025-07-15

Family

ID=77928125

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022511951A Active JP7708740B2 (ja) 2020-03-30 2021-03-22 窒化物半導体レーザ素子
JP2025112751A Pending JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025112751A Pending JP2025129325A (ja) 2020-03-30 2025-07-03 窒化物半導体レーザ素子

Country Status (3)

Country Link
US (1) US20230019645A1 (https=)
JP (2) JP7708740B2 (https=)
WO (1) WO2021200328A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024004677A1 (https=) * 2022-06-28 2024-01-04

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218523A (ja) 2007-02-28 2008-09-18 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
JP2008244454A (ja) 2007-02-26 2008-10-09 Toshiba Corp 半導体レーザ装置
WO2009147853A1 (ja) 2008-06-06 2009-12-10 パナソニック株式会社 半導体発光素子
JP2010153810A (ja) 2008-11-21 2010-07-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子および光ピックアップ装置
JP2011009374A (ja) 2009-06-24 2011-01-13 Panasonic Corp 窒化物半導体レーザ
JP2012109499A (ja) 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
US20130343419A1 (en) 2012-04-04 2013-12-26 Osram Opto Semiconductors Gmbh Laser Diode Assembly
WO2014002339A1 (ja) 2012-06-29 2014-01-03 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7668218B2 (en) * 2007-02-20 2010-02-23 Nichia Corporation Nitride semiconductor laser element

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244454A (ja) 2007-02-26 2008-10-09 Toshiba Corp 半導体レーザ装置
JP2008218523A (ja) 2007-02-28 2008-09-18 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
WO2009147853A1 (ja) 2008-06-06 2009-12-10 パナソニック株式会社 半導体発光素子
JP2010153810A (ja) 2008-11-21 2010-07-08 Sanyo Electric Co Ltd 窒化物系半導体レーザ素子および光ピックアップ装置
JP2011009374A (ja) 2009-06-24 2011-01-13 Panasonic Corp 窒化物半導体レーザ
JP2012109499A (ja) 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
US20130343419A1 (en) 2012-04-04 2013-12-26 Osram Opto Semiconductors Gmbh Laser Diode Assembly
WO2014002339A1 (ja) 2012-06-29 2014-01-03 パナソニック株式会社 窒化物半導体発光素子
WO2014097508A1 (ja) 2012-12-19 2014-06-26 パナソニック株式会社 窒化物半導体レーザ素子
WO2019159449A1 (ja) 2018-02-14 2019-08-22 パナソニックＩｐマネジメント株式会社 窒化物半導体レーザ素子及び照明光源モジュール

Also Published As

Publication number Publication date
JP2025129325A (ja) 2025-09-04
US20230019645A1 (en) 2023-01-19
WO2021200328A1 (ja) 2021-10-07
JPWO2021200328A1 (https=) 2021-10-07

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