JPWO2021181651A5 - - Google Patents
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- Publication number
- JPWO2021181651A5 JPWO2021181651A5 JP2022505684A JP2022505684A JPWO2021181651A5 JP WO2021181651 A5 JPWO2021181651 A5 JP WO2021181651A5 JP 2022505684 A JP2022505684 A JP 2022505684A JP 2022505684 A JP2022505684 A JP 2022505684A JP WO2021181651 A5 JPWO2021181651 A5 JP WO2021181651A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- orbit torque
- spin
- torque wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000010410 layer Substances 0.000 claims 95
- 230000005294 ferromagnetic effect Effects 0.000 claims 34
- 230000005415 magnetization Effects 0.000 claims 14
- 238000003475 lamination Methods 0.000 claims 12
- 230000005291 magnetic effect Effects 0.000 claims 4
- 238000010030 laminating Methods 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000005484 gravity Effects 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/011035 WO2021181651A1 (ja) | 2020-03-13 | 2020-03-13 | 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021181651A1 JPWO2021181651A1 (https=) | 2021-09-16 |
| JPWO2021181651A5 true JPWO2021181651A5 (https=) | 2022-11-09 |
| JP7168123B2 JP7168123B2 (ja) | 2022-11-09 |
Family
ID=77671065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022505684A Active JP7168123B2 (ja) | 2020-03-13 | 2020-03-13 | 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12490658B2 (https=) |
| JP (1) | JP7168123B2 (https=) |
| CN (1) | CN115039235B (https=) |
| WO (1) | WO2021181651A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230263074A1 (en) * | 2022-02-16 | 2023-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory Device Including Bottom Electrode Bridges and Method of Manufacture |
| JP7716602B2 (ja) * | 2022-09-27 | 2025-07-31 | Tdk株式会社 | 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 |
| WO2024171324A1 (ja) * | 2023-02-15 | 2024-08-22 | Tdk株式会社 | 磁性素子、磁気アレイ及び磁性素子の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2963153B1 (fr) | 2010-07-26 | 2013-04-26 | Centre Nat Rech Scient | Element magnetique inscriptible |
| WO2013025994A2 (en) | 2011-08-18 | 2013-02-21 | Cornell University | Spin hall effect magnetic apparatus, method and applications |
| US9384812B2 (en) * | 2014-01-28 | 2016-07-05 | Qualcomm Incorporated | Three-phase GSHE-MTJ non-volatile flip-flop |
| JP6168578B2 (ja) | 2014-08-08 | 2017-07-26 | 国立大学法人東北大学 | 磁気抵抗効果素子、及び磁気メモリ装置 |
| WO2017090736A1 (ja) | 2015-11-27 | 2017-06-01 | Tdk株式会社 | スピン流磁化反転型磁気抵抗効果素子及びスピン流磁化反転型磁気抵抗効果素子の製造方法 |
| JP6297104B2 (ja) | 2016-08-04 | 2018-03-20 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
| US10205088B2 (en) * | 2016-10-27 | 2019-02-12 | Tdk Corporation | Magnetic memory |
| JP2019047120A (ja) | 2017-09-01 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子 |
| US10741318B2 (en) | 2017-09-05 | 2020-08-11 | Tdk Corporation | Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element |
| KR20250113518A (ko) | 2018-01-10 | 2025-07-25 | 고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠 | 자기 저항 효과 소자 및 자기 메모리 |
| JP7020173B2 (ja) | 2018-02-26 | 2022-02-16 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びスピン軌道トルク型磁化回転素子の製造方法 |
| US11367749B2 (en) * | 2018-06-28 | 2022-06-21 | Intel Corporation | Spin orbit torque (SOT) memory devices and their methods of fabrication |
| US11522009B2 (en) * | 2019-07-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having self-aligned shunting layer |
-
2020
- 2020-03-13 CN CN202080095332.6A patent/CN115039235B/zh active Active
- 2020-03-13 US US17/909,950 patent/US12490658B2/en active Active
- 2020-03-13 WO PCT/JP2020/011035 patent/WO2021181651A1/ja not_active Ceased
- 2020-03-13 JP JP2022505684A patent/JP7168123B2/ja active Active
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