JPWO2021181651A1 - - Google Patents
Info
- Publication number
- JPWO2021181651A1 JPWO2021181651A1 JP2022505684A JP2022505684A JPWO2021181651A1 JP WO2021181651 A1 JPWO2021181651 A1 JP WO2021181651A1 JP 2022505684 A JP2022505684 A JP 2022505684A JP 2022505684 A JP2022505684 A JP 2022505684A JP WO2021181651 A1 JPWO2021181651 A1 JP WO2021181651A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/011035 WO2021181651A1 (ja) | 2020-03-13 | 2020-03-13 | 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021181651A1 true JPWO2021181651A1 (https=) | 2021-09-16 |
| JPWO2021181651A5 JPWO2021181651A5 (https=) | 2022-11-09 |
| JP7168123B2 JP7168123B2 (ja) | 2022-11-09 |
Family
ID=77671065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022505684A Active JP7168123B2 (ja) | 2020-03-13 | 2020-03-13 | 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12490658B2 (https=) |
| JP (1) | JP7168123B2 (https=) |
| CN (1) | CN115039235B (https=) |
| WO (1) | WO2021181651A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230263074A1 (en) * | 2022-02-16 | 2023-08-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory Device Including Bottom Electrode Bridges and Method of Manufacture |
| JP7716602B2 (ja) * | 2022-09-27 | 2025-07-31 | Tdk株式会社 | 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 |
| WO2024171324A1 (ja) * | 2023-02-15 | 2024-08-22 | Tdk株式会社 | 磁性素子、磁気アレイ及び磁性素子の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017510016A (ja) * | 2014-01-28 | 2017-04-06 | クアルコム，インコーポレイテッド | ３フェーズｇｓｈｅ−ｍｔｊ不揮発性フリップフロップ |
| WO2017090728A1 (ja) * | 2015-11-27 | 2017-06-01 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ |
| JP2018022806A (ja) * | 2016-08-04 | 2018-02-08 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
| JP2019047120A (ja) * | 2017-09-01 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子 |
| WO2019138778A1 (ja) * | 2018-01-10 | 2019-07-18 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2963153B1 (fr) | 2010-07-26 | 2013-04-26 | Centre Nat Rech Scient | Element magnetique inscriptible |
| WO2013025994A2 (en) | 2011-08-18 | 2013-02-21 | Cornell University | Spin hall effect magnetic apparatus, method and applications |
| JP6168578B2 (ja) | 2014-08-08 | 2017-07-26 | 国立大学法人東北大学 | 磁気抵抗効果素子、及び磁気メモリ装置 |
| US10205088B2 (en) * | 2016-10-27 | 2019-02-12 | Tdk Corporation | Magnetic memory |
| US10741318B2 (en) | 2017-09-05 | 2020-08-11 | Tdk Corporation | Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element |
| JP7020173B2 (ja) | 2018-02-26 | 2022-02-16 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びスピン軌道トルク型磁化回転素子の製造方法 |
| US11367749B2 (en) * | 2018-06-28 | 2022-06-21 | Intel Corporation | Spin orbit torque (SOT) memory devices and their methods of fabrication |
| US11522009B2 (en) * | 2019-07-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having self-aligned shunting layer |
-
2020
- 2020-03-13 CN CN202080095332.6A patent/CN115039235B/zh active Active
- 2020-03-13 US US17/909,950 patent/US12490658B2/en active Active
- 2020-03-13 WO PCT/JP2020/011035 patent/WO2021181651A1/ja not_active Ceased
- 2020-03-13 JP JP2022505684A patent/JP7168123B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017510016A (ja) * | 2014-01-28 | 2017-04-06 | クアルコム，インコーポレイテッド | ３フェーズｇｓｈｅ−ｍｔｊ不揮発性フリップフロップ |
| WO2017090728A1 (ja) * | 2015-11-27 | 2017-06-01 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ |
| JP2018022806A (ja) * | 2016-08-04 | 2018-02-08 | 株式会社東芝 | 磁気記憶装置及びその製造方法 |
| JP2019047120A (ja) * | 2017-09-01 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子 |
| WO2019138778A1 (ja) * | 2018-01-10 | 2019-07-18 | 国立大学法人東北大学 | 磁気抵抗効果素子及び磁気メモリ |
Also Published As
| Publication number | Publication date |
|---|---|
| US12490658B2 (en) | 2025-12-02 |
| US20230107965A1 (en) | 2023-04-06 |
| CN115039235B (zh) | 2025-12-12 |
| WO2021181651A1 (ja) | 2021-09-16 |
| JP7168123B2 (ja) | 2022-11-09 |
| CN115039235A (zh) | 2022-09-09 |
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