CN115039235B - 磁化旋转元件、磁阻效应元件、磁记录阵列、高频器件及磁化旋转元件的制造方法 - Google Patents

磁化旋转元件、磁阻效应元件、磁记录阵列、高频器件及磁化旋转元件的制造方法

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Publication number
CN115039235B
CN115039235B CN202080095332.6A CN202080095332A CN115039235B CN 115039235 B CN115039235 B CN 115039235B CN 202080095332 A CN202080095332 A CN 202080095332A CN 115039235 B CN115039235 B CN 115039235B
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China
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layer
low
spin
region
orbit torque
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Chinese (zh)
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CN115039235A (zh
Inventor
石谷优刚
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TDK Corp
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TDK Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN202080095332.6A 2020-03-13 2020-03-13 磁化旋转元件、磁阻效应元件、磁记录阵列、高频器件及磁化旋转元件的制造方法 Active CN115039235B (zh)

Applications Claiming Priority (1)

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PCT/JP2020/011035 WO2021181651A1 (ja) 2020-03-13 2020-03-13 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法

Publications (2)

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CN115039235A CN115039235A (zh) 2022-09-09
CN115039235B true CN115039235B (zh) 2025-12-12

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Country Status (4)

Country Link
US (1) US12490658B2 (https=)
JP (1) JP7168123B2 (https=)
CN (1) CN115039235B (https=)
WO (1) WO2021181651A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230263074A1 (en) * 2022-02-16 2023-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Memory Device Including Bottom Electrode Bridges and Method of Manufacture
JP7716602B2 (ja) * 2022-09-27 2025-07-31 Tdk株式会社 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子
WO2024171324A1 (ja) * 2023-02-15 2024-08-22 Tdk株式会社 磁性素子、磁気アレイ及び磁性素子の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107689417A (zh) * 2016-08-04 2018-02-13 株式会社东芝 磁存储装置及其制造方法
CN109427965A (zh) * 2017-09-05 2019-03-05 Tdk株式会社 自旋流磁化旋转元件、自旋轨道转矩型磁阻效应元件
WO2019138778A1 (ja) * 2018-01-10 2019-07-18 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2963153B1 (fr) 2010-07-26 2013-04-26 Centre Nat Rech Scient Element magnetique inscriptible
WO2013025994A2 (en) 2011-08-18 2013-02-21 Cornell University Spin hall effect magnetic apparatus, method and applications
US9384812B2 (en) * 2014-01-28 2016-07-05 Qualcomm Incorporated Three-phase GSHE-MTJ non-volatile flip-flop
JP6168578B2 (ja) 2014-08-08 2017-07-26 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
WO2017090736A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転型磁気抵抗効果素子及びスピン流磁化反転型磁気抵抗効果素子の製造方法
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
JP2019047120A (ja) 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
JP7020173B2 (ja) 2018-02-26 2022-02-16 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びスピン軌道トルク型磁化回転素子の製造方法
US11367749B2 (en) * 2018-06-28 2022-06-21 Intel Corporation Spin orbit torque (SOT) memory devices and their methods of fabrication
US11522009B2 (en) * 2019-07-30 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having self-aligned shunting layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107689417A (zh) * 2016-08-04 2018-02-13 株式会社东芝 磁存储装置及其制造方法
CN109427965A (zh) * 2017-09-05 2019-03-05 Tdk株式会社 自旋流磁化旋转元件、自旋轨道转矩型磁阻效应元件
WO2019138778A1 (ja) * 2018-01-10 2019-07-18 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

Also Published As

Publication number Publication date
US12490658B2 (en) 2025-12-02
JPWO2021181651A1 (https=) 2021-09-16
US20230107965A1 (en) 2023-04-06
WO2021181651A1 (ja) 2021-09-16
JP7168123B2 (ja) 2022-11-09
CN115039235A (zh) 2022-09-09

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