JP7168123B2 - 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 - Google Patents

磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 Download PDF

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JP7168123B2
JP7168123B2 JP2022505684A JP2022505684A JP7168123B2 JP 7168123 B2 JP7168123 B2 JP 7168123B2 JP 2022505684 A JP2022505684 A JP 2022505684A JP 2022505684 A JP2022505684 A JP 2022505684A JP 7168123 B2 JP7168123 B2 JP 7168123B2
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spin
orbit torque
torque wiring
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優剛 石谷
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TDK Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

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  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2022505684A 2020-03-13 2020-03-13 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 Active JP7168123B2 (ja)

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JPWO2021181651A5 JPWO2021181651A5 (https=) 2022-11-09
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Publication number Priority date Publication date Assignee Title
US20230263074A1 (en) * 2022-02-16 2023-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Memory Device Including Bottom Electrode Bridges and Method of Manufacture
JP7716602B2 (ja) * 2022-09-27 2025-07-31 Tdk株式会社 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子
WO2024171324A1 (ja) * 2023-02-15 2024-08-22 Tdk株式会社 磁性素子、磁気アレイ及び磁性素子の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510016A (ja) 2014-01-28 2017-04-06 クアルコム，インコーポレイテッド ３フェーズｇｓｈｅ−ｍｔｊ不揮発性フリップフロップ
WO2017090728A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
JP2018022806A (ja) 2016-08-04 2018-02-08 株式会社東芝 磁気記憶装置及びその製造方法
JP2019047120A (ja) 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
WO2019138778A1 (ja) 2018-01-10 2019-07-18 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

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FR2963153B1 (fr) 2010-07-26 2013-04-26 Centre Nat Rech Scient Element magnetique inscriptible
WO2013025994A2 (en) 2011-08-18 2013-02-21 Cornell University Spin hall effect magnetic apparatus, method and applications
JP6168578B2 (ja) 2014-08-08 2017-07-26 国立大学法人東北大学 磁気抵抗効果素子、及び磁気メモリ装置
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
US10741318B2 (en) 2017-09-05 2020-08-11 Tdk Corporation Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
JP7020173B2 (ja) 2018-02-26 2022-02-16 Tdk株式会社 スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及びスピン軌道トルク型磁化回転素子の製造方法
US11367749B2 (en) * 2018-06-28 2022-06-21 Intel Corporation Spin orbit torque (SOT) memory devices and their methods of fabrication
US11522009B2 (en) * 2019-07-30 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having self-aligned shunting layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510016A (ja) 2014-01-28 2017-04-06 クアルコム，インコーポレイテッド ３フェーズｇｓｈｅ−ｍｔｊ不揮発性フリップフロップ
WO2017090728A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
JP2018022806A (ja) 2016-08-04 2018-02-08 株式会社東芝 磁気記憶装置及びその製造方法
JP2019047120A (ja) 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
WO2019138778A1 (ja) 2018-01-10 2019-07-18 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

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US12490658B2 (en) 2025-12-02
JPWO2021181651A1 (https=) 2021-09-16
US20230107965A1 (en) 2023-04-06
CN115039235B (zh) 2025-12-12
WO2021181651A1 (ja) 2021-09-16
CN115039235A (zh) 2022-09-09

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