JPWO2021181651A1 - - Google Patents

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Publication number
JPWO2021181651A1
JPWO2021181651A1 JP2022505684A JP2022505684A JPWO2021181651A1 JP WO2021181651 A1 JPWO2021181651 A1 JP WO2021181651A1 JP 2022505684 A JP2022505684 A JP 2022505684A JP 2022505684 A JP2022505684 A JP 2022505684A JP WO2021181651 A1 JPWO2021181651 A1 JP WO2021181651A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022505684A
Other versions
JPWO2021181651A5 (ja
JP7168123B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021181651A1 publication Critical patent/JPWO2021181651A1/ja
Application granted granted Critical
Publication of JPWO2021181651A5 publication Critical patent/JPWO2021181651A5/ja
Publication of JP7168123B2 publication Critical patent/JP7168123B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Hall/Mr Elements (AREA)
JP2022505684A 2020-03-13 2020-03-13 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 Active JP7168123B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/011035 WO2021181651A1 (ja) 2020-03-13 2020-03-13 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021181651A1 true JPWO2021181651A1 (ja) 2021-09-16
JPWO2021181651A5 JPWO2021181651A5 (ja) 2022-11-09
JP7168123B2 JP7168123B2 (ja) 2022-11-09

Family

ID=77671065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022505684A Active JP7168123B2 (ja) 2020-03-13 2020-03-13 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法

Country Status (4)

Country Link
US (1) US20230107965A1 (ja)
JP (1) JP7168123B2 (ja)
CN (1) CN115039235A (ja)
WO (1) WO2021181651A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024069733A1 (ja) * 2022-09-27 2024-04-04 Tdk株式会社 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510016A (ja) * 2014-01-28 2017-04-06 クアルコム，インコーポレイテッド ３フェーズｇｓｈｅ−ｍｔｊ不揮発性フリップフロップ
WO2017090728A1 (ja) * 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
JP2018022806A (ja) * 2016-08-04 2018-02-08 株式会社東芝 磁気記憶装置及びその製造方法
JP2019047120A (ja) * 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
WO2019138778A1 (ja) * 2018-01-10 2019-07-18 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510016A (ja) * 2014-01-28 2017-04-06 クアルコム，インコーポレイテッド ３フェーズｇｓｈｅ−ｍｔｊ不揮発性フリップフロップ
WO2017090728A1 (ja) * 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
JP2018022806A (ja) * 2016-08-04 2018-02-08 株式会社東芝 磁気記憶装置及びその製造方法
JP2019047120A (ja) * 2017-09-01 2019-03-22 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子、磁気メモリ及び高周波磁気素子
WO2019138778A1 (ja) * 2018-01-10 2019-07-18 国立大学法人東北大学 磁気抵抗効果素子及び磁気メモリ

Also Published As

Publication number Publication date
CN115039235A (zh) 2022-09-09
US20230107965A1 (en) 2023-04-06
JP7168123B2 (ja) 2022-11-09
WO2021181651A1 (ja) 2021-09-16

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