JPWO2021161134A1 - - Google Patents

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Publication number
JPWO2021161134A1
JPWO2021161134A1 JP2021577711A JP2021577711A JPWO2021161134A1 JP WO2021161134 A1 JPWO2021161134 A1 JP WO2021161134A1 JP 2021577711 A JP2021577711 A JP 2021577711A JP 2021577711 A JP2021577711 A JP 2021577711A JP WO2021161134 A1 JPWO2021161134 A1 JP WO2021161134A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2021577711A
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Japanese (ja)
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JP7735189B2 (ja
JPWO2021161134A5 (https=
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Publication of JPWO2021161134A5 publication Critical patent/JPWO2021161134A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/95—Computational photography systems, e.g. light-field imaging systems
    • H04N23/951—Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D80/00—Assemblies of multiple devices comprising at least one device covered by this subclass
    • H10D80/30—Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups H10D84/00 - H10D86/00, e.g. assemblies comprising integrated circuit processor chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/38—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/401—Integrated devices having a three-dimensional layout, e.g. 3D ICs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/601—Assemblies of multiple devices comprising at least one organic radiation-sensitive element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021577711A 2020-02-14 2021-02-03 撮像装置 Active JP7735189B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020023387 2020-02-14
JP2020023387 2020-02-14
PCT/IB2021/050845 WO2021161134A1 (ja) 2020-02-14 2021-02-03 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2021161134A1 true JPWO2021161134A1 (https=) 2021-08-19
JPWO2021161134A5 JPWO2021161134A5 (https=) 2024-01-17
JP7735189B2 JP7735189B2 (ja) 2025-09-08

Family

ID=77292138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021577711A Active JP7735189B2 (ja) 2020-02-14 2021-02-03 撮像装置

Country Status (3)

Country Link
US (1) US12426435B2 (https=)
JP (1) JP7735189B2 (https=)
WO (1) WO2021161134A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220075721A (ko) * 2020-11-30 2022-06-08 삼성전자주식회사 이미지 센서 및 전자 장치
WO2022185151A1 (ja) 2021-03-05 2022-09-09 株式会社半導体エネルギー研究所 電子機器
WO2025134554A1 (ja) * 2023-12-20 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Citations (16)

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Publication number Priority date Publication date Assignee Title
JP2006245284A (ja) * 2005-03-03 2006-09-14 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子及びその製造方法
US20070018075A1 (en) * 2005-07-21 2007-01-25 Stmicroelectronics S.A. Image sensor
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP2008227091A (ja) * 2007-03-12 2008-09-25 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2011138927A (ja) * 2009-12-28 2011-07-14 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012191222A (ja) * 2012-05-21 2012-10-04 Fujifilm Corp 光電変換素子の製造方法
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015095517A (ja) * 2013-11-11 2015-05-18 日本放送協会 積層型集積回路及びその製造方法
WO2016002576A1 (ja) * 2014-07-03 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
JP2016213298A (ja) * 2015-05-07 2016-12-15 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2017014025A1 (ja) * 2015-07-17 2017-01-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、半導体装置、および電子機器
JP2017060003A (ja) * 2015-09-16 2017-03-23 株式会社東芝 撮像装置及び撮像システム
JP2017174936A (ja) * 2016-03-23 2017-09-28 ソニー株式会社 固体撮像素子及び電子機器
JP2017183992A (ja) * 2016-03-30 2017-10-05 リコーイメージング株式会社 撮像素子、焦点検出装置および撮像装置
WO2020022462A1 (ja) * 2018-07-26 2020-01-30 ソニー株式会社 固体撮像素子、固体撮像装置、及び、固体撮像素子の読み出し方法

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EP1970959A3 (en) 2007-03-12 2013-07-31 FUJIFILM Corporation Photoelectric conversion element and solid-state imaging device
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
JP2011243704A (ja) 2010-05-17 2011-12-01 Panasonic Corp 固体撮像装置
KR20150118885A (ko) 2014-04-15 2015-10-23 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
US20150287766A1 (en) 2014-04-02 2015-10-08 Tae-Chan Kim Unit pixel of an image sensor and image sensor including the same
US10170565B2 (en) 2015-04-22 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Imaging device, method for driving imaging device, and electronic device
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2019130702A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202541675A (zh) * 2018-12-28 2025-10-16 日商半導體能源研究所股份有限公司 發光裝置、照明裝置、顯示裝置、模組及電子機器
WO2021070000A1 (ja) 2019-10-11 2021-04-15 株式会社半導体エネルギー研究所 撮像システム及び監視システム
US12041800B2 (en) 2019-11-22 2024-07-16 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245284A (ja) * 2005-03-03 2006-09-14 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子及びその製造方法
US20070018075A1 (en) * 2005-07-21 2007-01-25 Stmicroelectronics S.A. Image sensor
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP2008227091A (ja) * 2007-03-12 2008-09-25 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2011138927A (ja) * 2009-12-28 2011-07-14 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2012015400A (ja) * 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012191222A (ja) * 2012-05-21 2012-10-04 Fujifilm Corp 光電変換素子の製造方法
JP2015032687A (ja) * 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015095517A (ja) * 2013-11-11 2015-05-18 日本放送協会 積層型集積回路及びその製造方法
WO2016002576A1 (ja) * 2014-07-03 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
JP2016213298A (ja) * 2015-05-07 2016-12-15 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2017014025A1 (ja) * 2015-07-17 2017-01-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、半導体装置、および電子機器
JP2017060003A (ja) * 2015-09-16 2017-03-23 株式会社東芝 撮像装置及び撮像システム
JP2017174936A (ja) * 2016-03-23 2017-09-28 ソニー株式会社 固体撮像素子及び電子機器
JP2017183992A (ja) * 2016-03-30 2017-10-05 リコーイメージング株式会社 撮像素子、焦点検出装置および撮像装置
WO2020022462A1 (ja) * 2018-07-26 2020-01-30 ソニー株式会社 固体撮像素子、固体撮像装置、及び、固体撮像素子の読み出し方法

Also Published As

Publication number Publication date
US12426435B2 (en) 2025-09-23
US20230144505A1 (en) 2023-05-11
JP7735189B2 (ja) 2025-09-08
WO2021161134A1 (ja) 2021-08-19

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