JP7735189B2 - 撮像装置 - Google Patents

撮像装置

Info

Publication number
JP7735189B2
JP7735189B2 JP2021577711A JP2021577711A JP7735189B2 JP 7735189 B2 JP7735189 B2 JP 7735189B2 JP 2021577711 A JP2021577711 A JP 2021577711A JP 2021577711 A JP2021577711 A JP 2021577711A JP 7735189 B2 JP7735189 B2 JP 7735189B2
Authority
JP
Japan
Prior art keywords
light
receiving element
transistor
layer
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021577711A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021161134A5 (https=
JPWO2021161134A1 (https=
Inventor
雄介 根来
誠一 米田
広樹 井上
駿介 佐藤
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2021161134A1 publication Critical patent/JPWO2021161134A1/ja
Publication of JPWO2021161134A5 publication Critical patent/JPWO2021161134A5/ja
Application granted granted Critical
Publication of JP7735189B2 publication Critical patent/JP7735189B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/95—Computational photography systems, e.g. light-field imaging systems
    • H04N23/951—Computational photography systems, e.g. light-field imaging systems by using two or more images to influence resolution, frame rate or aspect ratio
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D80/00—Assemblies of multiple devices comprising at least one device covered by this subclass
    • H10D80/30—Assemblies of multiple devices comprising at least one device covered by this subclass the at least one device being covered by groups H10D84/00 - H10D86/00, e.g. assemblies comprising integrated circuit processor chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/38—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/401—Integrated devices having a three-dimensional layout, e.g. 3D ICs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/601—Assemblies of multiple devices comprising at least one organic radiation-sensitive element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021577711A 2020-02-14 2021-02-03 撮像装置 Active JP7735189B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020023387 2020-02-14
JP2020023387 2020-02-14
PCT/IB2021/050845 WO2021161134A1 (ja) 2020-02-14 2021-02-03 撮像装置

Publications (3)

Publication Number Publication Date
JPWO2021161134A1 JPWO2021161134A1 (https=) 2021-08-19
JPWO2021161134A5 JPWO2021161134A5 (https=) 2024-01-17
JP7735189B2 true JP7735189B2 (ja) 2025-09-08

Family

ID=77292138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021577711A Active JP7735189B2 (ja) 2020-02-14 2021-02-03 撮像装置

Country Status (3)

Country Link
US (1) US12426435B2 (https=)
JP (1) JP7735189B2 (https=)
WO (1) WO2021161134A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220075721A (ko) * 2020-11-30 2022-06-08 삼성전자주식회사 이미지 센서 및 전자 장치
WO2022185151A1 (ja) 2021-03-05 2022-09-09 株式会社半導体エネルギー研究所 電子機器
WO2025134554A1 (ja) * 2023-12-20 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245284A (ja) 2005-03-03 2006-09-14 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子及びその製造方法
US20070018075A1 (en) 2005-07-21 2007-01-25 Stmicroelectronics S.A. Image sensor
JP2007228460A (ja) 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP2008227091A (ja) 2007-03-12 2008-09-25 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2011138927A (ja) 2009-12-28 2011-07-14 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2012015400A (ja) 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012191222A (ja) 2012-05-21 2012-10-04 Fujifilm Corp 光電変換素子の製造方法
JP2015032687A (ja) 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015095517A (ja) 2013-11-11 2015-05-18 日本放送協会 積層型集積回路及びその製造方法
WO2016002576A1 (ja) 2014-07-03 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
JP2016213298A (ja) 2015-05-07 2016-12-15 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2017014025A1 (ja) 2015-07-17 2017-01-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、半導体装置、および電子機器
JP2017060003A (ja) 2015-09-16 2017-03-23 株式会社東芝 撮像装置及び撮像システム
JP2017174936A (ja) 2016-03-23 2017-09-28 ソニー株式会社 固体撮像素子及び電子機器
JP2017183992A (ja) 2016-03-30 2017-10-05 リコーイメージング株式会社 撮像素子、焦点検出装置および撮像装置
WO2020022462A1 (ja) 2018-07-26 2020-01-30 ソニー株式会社 固体撮像素子、固体撮像装置、及び、固体撮像素子の読み出し方法

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EP1970959A3 (en) 2007-03-12 2013-07-31 FUJIFILM Corporation Photoelectric conversion element and solid-state imaging device
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
JP2011243704A (ja) 2010-05-17 2011-12-01 Panasonic Corp 固体撮像装置
KR20150118885A (ko) 2014-04-15 2015-10-23 삼성전자주식회사 이미지 센서의 단위 픽셀 및 이를 포함하는 이미지 센서
US20150287766A1 (en) 2014-04-02 2015-10-08 Tae-Chan Kim Unit pixel of an image sensor and image sensor including the same
US10170565B2 (en) 2015-04-22 2019-01-01 Semiconductor Energy Laboratory Co., Ltd. Imaging device, method for driving imaging device, and electronic device
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2019130702A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
TW202541675A (zh) * 2018-12-28 2025-10-16 日商半導體能源研究所股份有限公司 發光裝置、照明裝置、顯示裝置、模組及電子機器
WO2021070000A1 (ja) 2019-10-11 2021-04-15 株式会社半導体エネルギー研究所 撮像システム及び監視システム
US12041800B2 (en) 2019-11-22 2024-07-16 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245284A (ja) 2005-03-03 2006-09-14 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子及びその製造方法
US20070018075A1 (en) 2005-07-21 2007-01-25 Stmicroelectronics S.A. Image sensor
JP2007228460A (ja) 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
JP2008227091A (ja) 2007-03-12 2008-09-25 Fujifilm Corp 光電変換素子及び固体撮像素子
JP2011138927A (ja) 2009-12-28 2011-07-14 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2012015400A (ja) 2010-07-02 2012-01-19 Canon Inc 固体撮像装置
JP2012191222A (ja) 2012-05-21 2012-10-04 Fujifilm Corp 光電変換素子の製造方法
JP2015032687A (ja) 2013-08-02 2015-02-16 ソニー株式会社 撮像素子、電子機器、および撮像素子の製造方法
JP2015095517A (ja) 2013-11-11 2015-05-18 日本放送協会 積層型集積回路及びその製造方法
WO2016002576A1 (ja) 2014-07-03 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
JP2016213298A (ja) 2015-05-07 2016-12-15 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2017014025A1 (ja) 2015-07-17 2017-01-26 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、半導体装置、および電子機器
JP2017060003A (ja) 2015-09-16 2017-03-23 株式会社東芝 撮像装置及び撮像システム
JP2017174936A (ja) 2016-03-23 2017-09-28 ソニー株式会社 固体撮像素子及び電子機器
JP2017183992A (ja) 2016-03-30 2017-10-05 リコーイメージング株式会社 撮像素子、焦点検出装置および撮像装置
WO2020022462A1 (ja) 2018-07-26 2020-01-30 ソニー株式会社 固体撮像素子、固体撮像装置、及び、固体撮像素子の読み出し方法

Also Published As

Publication number Publication date
US12426435B2 (en) 2025-09-23
US20230144505A1 (en) 2023-05-11
WO2021161134A1 (ja) 2021-08-19
JPWO2021161134A1 (https=) 2021-08-19

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