JPWO2021060182A1 - - Google Patents

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Publication number
JPWO2021060182A1
JPWO2021060182A1 JP2020551436A JP2020551436A JPWO2021060182A1 JP WO2021060182 A1 JPWO2021060182 A1 JP WO2021060182A1 JP 2020551436 A JP2020551436 A JP 2020551436A JP 2020551436 A JP2020551436 A JP 2020551436A JP WO2021060182 A1 JPWO2021060182 A1 JP WO2021060182A1
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JP
Japan
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JP2020551436A
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Japanese (ja)
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JPWO2021060182A5 (https=
JP7647100B2 (ja
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
JP2020551436A 2019-09-26 2020-09-18 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法 Active JP7647100B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019175316 2019-09-26
JP2019175316 2019-09-26
PCT/JP2020/035439 WO2021060182A1 (ja) 2019-09-26 2020-09-18 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法

Publications (3)

Publication Number Publication Date
JPWO2021060182A1 true JPWO2021060182A1 (https=) 2021-04-01
JPWO2021060182A5 JPWO2021060182A5 (https=) 2023-06-12
JP7647100B2 JP7647100B2 (ja) 2025-03-18

Family

ID=75165758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020551436A Active JP7647100B2 (ja) 2019-09-26 2020-09-18 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法

Country Status (4)

Country Link
JP (1) JP7647100B2 (https=)
CN (1) CN114342101A (https=)
TW (1) TW202112950A (https=)
WO (1) WO2021060182A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115148848A (zh) * 2022-06-27 2022-10-04 常州时创能源股份有限公司 链式吸杂用磷源及其制备方法和应用
WO2024057722A1 (ja) * 2022-09-16 2024-03-21 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法
JP7782635B1 (ja) * 2024-09-19 2025-12-09 栗田工業株式会社 半導体基板のドーピング処理方法およびドーピング処理装置
JP7782636B1 (ja) * 2024-09-19 2025-12-09 栗田工業株式会社 調整水の製造装置および調整水の製造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310373A (ja) * 2005-04-26 2006-11-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
JP2010062334A (ja) * 2008-09-03 2010-03-18 Japan Vam & Poval Co Ltd リン拡散用塗布液
JP2013008953A (ja) * 2011-05-20 2013-01-10 Nippon Synthetic Chem Ind Co Ltd:The 不純物拡散用塗布液
JP2013153052A (ja) * 2012-01-25 2013-08-08 Naoetsu Electronics Co Ltd P型拡散層用塗布液
JP2014030011A (ja) * 2012-07-04 2014-02-13 Nippon Synthetic Chem Ind Co Ltd:The ドーパント拡散用塗布液、およびその塗布方法、並びにそれを用いた半導体の製法、半導体
JP2014103232A (ja) * 2012-11-20 2014-06-05 Toray Ind Inc 非感光性組成物およびこれを用いた不純物拡散層の製造方法
JP2016195203A (ja) * 2015-04-01 2016-11-17 東レ株式会社 p型不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池。
JP2017103379A (ja) * 2015-12-03 2017-06-08 東レ株式会社 不純物拡散組成物、およびそれを用いた半導体素子の製造方法
WO2019176716A1 (ja) * 2018-03-16 2019-09-19 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法
WO2020116340A1 (ja) * 2018-12-07 2020-06-11 東レ株式会社 半導体素子の製造方法、および、太陽電池の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120020073A (ko) * 2010-08-27 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 설계 방법
JP6203496B2 (ja) * 2010-11-17 2017-09-27 日立化成株式会社 太陽電池の製造方法
KR101529778B1 (ko) * 2012-08-07 2015-06-17 주식회사 엘지화학 인쇄물 및 인쇄물의 제조방법
JP2014071306A (ja) * 2012-09-28 2014-04-21 Fujifilm Corp 硬化性樹脂組成物、転写材料、硬化物及びその製造方法、樹脂パターン製造方法、硬化膜、液晶表示装置、有機el表示装置並びにタッチパネル表示装置
CN108028188B (zh) * 2015-09-29 2022-03-22 东丽株式会社 p型杂质扩散组合物、使用其的半导体元件的制造方法及太阳能电池的制造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006310373A (ja) * 2005-04-26 2006-11-09 Shin Etsu Handotai Co Ltd 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
JP2010062334A (ja) * 2008-09-03 2010-03-18 Japan Vam & Poval Co Ltd リン拡散用塗布液
JP2013008953A (ja) * 2011-05-20 2013-01-10 Nippon Synthetic Chem Ind Co Ltd:The 不純物拡散用塗布液
JP2013153052A (ja) * 2012-01-25 2013-08-08 Naoetsu Electronics Co Ltd P型拡散層用塗布液
JP2014030011A (ja) * 2012-07-04 2014-02-13 Nippon Synthetic Chem Ind Co Ltd:The ドーパント拡散用塗布液、およびその塗布方法、並びにそれを用いた半導体の製法、半導体
JP2014103232A (ja) * 2012-11-20 2014-06-05 Toray Ind Inc 非感光性組成物およびこれを用いた不純物拡散層の製造方法
JP2016195203A (ja) * 2015-04-01 2016-11-17 東レ株式会社 p型不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池。
JP2017103379A (ja) * 2015-12-03 2017-06-08 東レ株式会社 不純物拡散組成物、およびそれを用いた半導体素子の製造方法
WO2019176716A1 (ja) * 2018-03-16 2019-09-19 東レ株式会社 不純物拡散組成物、それを用いた半導体素子の製造方法および太陽電池の製造方法
WO2020116340A1 (ja) * 2018-12-07 2020-06-11 東レ株式会社 半導体素子の製造方法、および、太陽電池の製造方法

Also Published As

Publication number Publication date
CN114342101A (zh) 2022-04-12
TW202112950A (zh) 2021-04-01
WO2021060182A1 (ja) 2021-04-01
JP7647100B2 (ja) 2025-03-18

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