JPWO2020228233A5 - - Google Patents

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JPWO2020228233A5
JPWO2020228233A5 JP2021546860A JP2021546860A JPWO2020228233A5 JP WO2020228233 A5 JPWO2020228233 A5 JP WO2020228233A5 JP 2021546860 A JP2021546860 A JP 2021546860A JP 2021546860 A JP2021546860 A JP 2021546860A JP WO2020228233 A5 JPWO2020228233 A5 JP WO2020228233A5
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layer
lateral
gratings
semiconductor chip
sets
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JP2021546860A
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JP2022521688A (ja
JP7223866B2 (ja
JP2022521688A5 (https=
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Priority claimed from CN201910395812.3A external-priority patent/CN110112650B/zh
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JP2021546860A 2019-05-13 2019-10-12 ハイパワー半導体チップ及びその製造方法 Active JP7223866B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201910395812.3 2019-05-13
CN201910395812.3A CN110112650B (zh) 2019-05-13 2019-05-13 一种高功率半导体芯片及其制备方法
PCT/CN2019/110897 WO2020228233A1 (zh) 2019-05-13 2019-10-12 一种高功率半导体芯片及其制备方法

Publications (4)

Publication Number Publication Date
JP2022521688A JP2022521688A (ja) 2022-04-12
JPWO2020228233A5 true JPWO2020228233A5 (https=) 2022-08-23
JP2022521688A5 JP2022521688A5 (https=) 2022-08-23
JP7223866B2 JP7223866B2 (ja) 2023-02-16

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JP2021546860A Active JP7223866B2 (ja) 2019-05-13 2019-10-12 ハイパワー半導体チップ及びその製造方法

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US (1) US20220166190A1 (https=)
JP (1) JP7223866B2 (https=)
CN (1) CN110112650B (https=)
WO (1) WO2020228233A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
KR100674836B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
JP2007243019A (ja) * 2006-03-10 2007-09-20 Fujitsu Ltd 光半導体素子
JP4312239B2 (ja) * 2007-02-16 2009-08-12 富士通株式会社 光素子及びその製造方法
JP2009194290A (ja) * 2008-02-18 2009-08-27 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザの作製方法及び半導体レーザ
JP2010034408A (ja) * 2008-07-30 2010-02-12 Sony Corp 半導体発光素子
CN101908715A (zh) * 2010-08-03 2010-12-08 中国科学院长春光学精密机械与物理研究所 利用光栅实现锁相的半导体激光器
CN102142657B (zh) * 2011-03-02 2012-12-12 中国科学院半导体研究所 用于改善条形激光器侧向远场的光子晶体波导的制作方法
CN104917052B (zh) * 2015-07-06 2017-10-24 中国科学院半导体研究所 变周期倾斜光栅激光器及制备方法
KR102475891B1 (ko) * 2015-10-08 2022-12-12 삼성전자주식회사 측면 발광 레이저 광원, 및 이를 포함한 3차원 영상 획득 장치
CN105914580B (zh) * 2016-07-07 2019-01-29 北京工业大学 具有侧向光栅和纵向布喇格反射镜结构的半导体激光器
CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

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