CN110112650B - 一种高功率半导体芯片及其制备方法 - Google Patents

一种高功率半导体芯片及其制备方法 Download PDF

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Publication number
CN110112650B
CN110112650B CN201910395812.3A CN201910395812A CN110112650B CN 110112650 B CN110112650 B CN 110112650B CN 201910395812 A CN201910395812 A CN 201910395812A CN 110112650 B CN110112650 B CN 110112650B
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China
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layer
grating
lateral
gratings
semiconductor chip
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Chinese (zh)
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CN110112650A (zh
Inventor
谭少阳
王俊
徐红
闵大勇
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Suzhou Everbright Photonics Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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Suzhou Everbright Photonics Technology Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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Application filed by Suzhou Everbright Photonics Technology Co Ltd, Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd filed Critical Suzhou Everbright Photonics Technology Co Ltd
Priority to CN201910395812.3A priority Critical patent/CN110112650B/zh
Publication of CN110112650A publication Critical patent/CN110112650A/zh
Priority to JP2021546860A priority patent/JP7223866B2/ja
Priority to US17/426,463 priority patent/US20220166190A1/en
Priority to PCT/CN2019/110897 priority patent/WO2020228233A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CN201910395812.3A 2019-05-13 2019-05-13 一种高功率半导体芯片及其制备方法 Active CN110112650B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201910395812.3A CN110112650B (zh) 2019-05-13 2019-05-13 一种高功率半导体芯片及其制备方法
JP2021546860A JP7223866B2 (ja) 2019-05-13 2019-10-12 ハイパワー半導体チップ及びその製造方法
US17/426,463 US20220166190A1 (en) 2019-05-13 2019-10-12 High-power semiconductor chip and preparation method therefor
PCT/CN2019/110897 WO2020228233A1 (zh) 2019-05-13 2019-10-12 一种高功率半导体芯片及其制备方法

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CN201910395812.3A CN110112650B (zh) 2019-05-13 2019-05-13 一种高功率半导体芯片及其制备方法

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CN110112650A CN110112650A (zh) 2019-08-09
CN110112650B true CN110112650B (zh) 2020-06-02

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JP (1) JP7223866B2 (https=)
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WO (1) WO2020228233A1 (https=)

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CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

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GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
KR100674836B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
JP2007243019A (ja) * 2006-03-10 2007-09-20 Fujitsu Ltd 光半導体素子
JP4312239B2 (ja) * 2007-02-16 2009-08-12 富士通株式会社 光素子及びその製造方法
JP2009194290A (ja) * 2008-02-18 2009-08-27 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザの作製方法及び半導体レーザ
JP2010034408A (ja) * 2008-07-30 2010-02-12 Sony Corp 半導体発光素子
CN101908715A (zh) * 2010-08-03 2010-12-08 中国科学院长春光学精密机械与物理研究所 利用光栅实现锁相的半导体激光器
CN102142657B (zh) * 2011-03-02 2012-12-12 中国科学院半导体研究所 用于改善条形激光器侧向远场的光子晶体波导的制作方法
CN104917052B (zh) * 2015-07-06 2017-10-24 中国科学院半导体研究所 变周期倾斜光栅激光器及制备方法
KR102475891B1 (ko) * 2015-10-08 2022-12-12 삼성전자주식회사 측면 발광 레이저 광원, 및 이를 포함한 3차원 영상 획득 장치
CN105914580B (zh) * 2016-07-07 2019-01-29 北京工业大学 具有侧向光栅和纵向布喇格反射镜结构的半导体激光器
CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

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WO2020228233A1 (zh) 2020-11-19
US20220166190A1 (en) 2022-05-26
JP2022521688A (ja) 2022-04-12
JP7223866B2 (ja) 2023-02-16
CN110112650A (zh) 2019-08-09

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Address after: 215011 Building 2, No. 189, Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province

Patentee after: SUZHOU EVERBRIGHT SEMICONDUCTOR LASER INNOVATION RESEARCH INSTITUTE Co.,Ltd.

Patentee after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd.

Address before: 215011 Building 2, No. 189, Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province

Patentee before: SUZHOU EVERBRIGHT SEMICONDUCTOR LASER INNOVATION RESEARCH INSTITUTE Co.,Ltd.

Patentee before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd.

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