WO2020228233A1 - 一种高功率半导体芯片及其制备方法 - Google Patents

一种高功率半导体芯片及其制备方法 Download PDF

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Publication number
WO2020228233A1
WO2020228233A1 PCT/CN2019/110897 CN2019110897W WO2020228233A1 WO 2020228233 A1 WO2020228233 A1 WO 2020228233A1 CN 2019110897 W CN2019110897 W CN 2019110897W WO 2020228233 A1 WO2020228233 A1 WO 2020228233A1
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Prior art keywords
layer
lateral
gratings
semiconductor chip
grating
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Ceased
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PCT/CN2019/110897
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English (en)
French (fr)
Chinese (zh)
Inventor
谭少阳
王俊
徐红
闵大勇
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Everbright Institute Of Semiconductor Photonics Co Ltd
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Everbright Institute Of Semiconductor Photonics Co Ltd
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Priority to JP2021546860A priority Critical patent/JP7223866B2/ja
Priority to US17/426,463 priority patent/US20220166190A1/en
Publication of WO2020228233A1 publication Critical patent/WO2020228233A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Definitions

  • This application relates to the field of semiconductor optoelectronics, in particular to a high-power semiconductor chip and a preparation method thereof.
  • the development direction of high-power semiconductor laser chips is higher output optical power and higher brightness.
  • Increasing the width of the light-emitting area of the laser chip and preparing a wide-waveguide semiconductor laser chip are effective means to increase the optical power.
  • the power of a semiconductor laser chip with a waveguide width of about 100-200 microns can reach more than 10W.
  • a problem caused by the increase in the width of the light-emitting area is that when the chip is working, dozens or more high-order light modes are lasing at the same time in the lateral direction, which causes the divergence angle to increase.
  • the currently adopted method to suppress high-order light lateral mode lasing is to introduce a multi-grating structure or multiple electrodes or waveguide stripes inside a wide waveguide.
  • the high-order mode light confinement factor of this introduced light scattering structure is sufficiently large, but this The method will result in a strong periodic distribution of the light gain and the square lateral, causing the problem of multi-peak far field.
  • the embodiments of the present application provide a high-power semiconductor chip and a manufacturing method thereof, so as to solve the problem of far-field multi-peak caused by controlling and suppressing the lateral mode lasing of high-order light.
  • an embodiment of the present application provides a high-power semiconductor chip, including: a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, a lateral grating layer, The upper confinement layer, the contact layer, the current isolation dielectric layer and the metal layer; wherein the lateral grating layer includes multiple sets of lateral gratings, the multiple sets of lateral gratings are arranged in sequence along the first direction, and the periods of the multiple sets of lateral gratings are different Each group of lateral gratings includes multiple gratings, the multiple gratings are arranged along the second direction, and the first direction intersects the second direction.
  • the first direction is the light radiation direction.
  • the first direction is perpendicular to the second direction.
  • the periods of each group of lateral gratings are arranged progressively or randomly in the first direction.
  • the current isolation dielectric layer and the metal layer define a current injection area
  • the lateral grating layer is disposed in the current injection area.
  • the light-emitting end surface of the semiconductor chip is provided with an anti-reflection coating layer
  • the high reflection end surface is provided with a high reflection coating layer
  • an embodiment of the present application provides a method for preparing a high-power semiconductor chip, including: sequentially forming a lower confinement layer, a lower waveguide layer, an active layer, and an upper waveguide layer on a substrate; on the upper waveguide layer Multiple sets of lateral gratings are sequentially formed along the first direction. The periods of the multiple sets of lateral gratings are different. The multiple gratings of each group of lateral gratings are arranged along the second direction, and the first direction intersects the second direction; An upper confinement layer, a contact layer, a current isolation dielectric layer and a metal layer are sequentially formed on the group of lateral gratings.
  • forming a plurality of groups of lateral gratings on the upper waveguide layer in the first direction in sequence includes: forming a lateral grating layer on the upper waveguide layer by epitaxial growth; etching the lateral grating layer to form grating stripes.
  • the suppression effect of the high-order optical mode is not limited by the width of the chip waveguide.
  • the high-order optical lateral mode can overlap with the grating structure enough, so that the high-order optical lateral mode is affected by the diffraction effect of light on the non-horizontal surface, and the propagation loss of the high-order optical lateral mode in the waveguide is introduced, which can suppress the high-order optical lateral mode lasing , Improve the power of the semiconductor chip; at the same time, by setting multiple groups of gratings with different periods, the intensity of the periodic oscillation of light caused by gain modulation and refractive index modulation cannot be matched with the period of the grating in the first direction, so as to suppress its lasing The effect of suppressing the periodic oscillation of lateral light intensity and eliminating the double peaks in the far field.
  • FIG. 1 shows a schematic cross-sectional view of a semiconductor chip structure in a second direction according to an embodiment of the present application.
  • FIG. 2 shows a schematic diagram of a three-dimensional structure of a semiconductor chip according to an embodiment of the present application.
  • 1 is the substrate
  • 2 is the lower confinement layer
  • 3 is the lower waveguide layer
  • 4 is the active layer
  • 5 is the upper waveguide layer
  • 6 is the upper confinement layer
  • 7 is the contact layer
  • 8 is the galvanic isolation dielectric layer
  • 9 is the The metal layer
  • 10 is the lateral grating layer.
  • the embodiment of the present application provides a high-power semiconductor chip, as shown in FIG. 1-2, including: a substrate 1, a lower confinement layer 2, a lower waveguide layer 3, an active layer 4, and an upper waveguide arranged in sequence from bottom to top Layer 5, lateral grating layer 10, upper confinement layer 6, contact layer 7, galvanic isolation layer 8 and metal layer 9; wherein, lateral grating layer 10 includes multiple sets of lateral gratings, multiple sets of lateral gratings along the first The directions are set in sequence, and the periods of the multiple groups of lateral gratings are different. Each group of lateral gratings includes multiple gratings, and the multiple gratings are arranged along the second direction, and the first direction intersects the second direction.
  • the structure of the active layer 4 may be one of a double heterostructure, a single and double quantum well structure, and a multiple quantum well structure.
  • the material of the substrate 1 may be GaAs, and the lower layer of the substrate 1 may also include an electrode layer, and the material of the electrode layer may be a metal or an alloy.
  • the suppression effect of the high-order optical mode is not limited by the width of the chip waveguide, and the high-order optical lateral mode can sufficiently overlap with the grating structure.
  • the high-order optical lateral mode is subjected to the diffraction effect of light on the non-horizontal surface, and the propagation loss of the high-order optical lateral mode in the waveguide is introduced, which can suppress the high-order optical lateral mode lasing and increase the power of the semiconductor chip; at the same time, by setting multiple groups of different periods
  • the grating makes the light of the intensity periodic oscillation of other order modes caused by gain modulation and refractive index modulation unable to match the period of the grating in the first direction, and achieves the effect of suppressing its lasing, so as to suppress the lateral light intensity
  • the effect of periodic oscillation eliminates the double peaks in the far field.
  • the first direction is the light radiation direction.
  • the first direction is the longitudinal direction of the semiconductor chip
  • the light radiation direction is also the longitudinal direction of the semiconductor chip
  • the first direction is the light radiation direction.
  • the first direction is perpendicular to the second direction.
  • the second direction is the lateral direction of the semiconductor chip
  • the first direction is the longitudinal direction of the semiconductor chip
  • the first direction and the second direction are perpendicular.
  • the current isolation dielectric layer 8 and the metal layer 9 define a current injection area
  • the lateral grating layer 10 is disposed in the current injection area.
  • a current injection area is formed between the galvanic isolation dielectric layer 8 and the upper waveguide layer 5.
  • the current injection area is defined by the galvanic isolation dielectric layer 8 and the metal layer 9, and the current injection area is ridge-shaped.
  • the injection area is provided with a lateral grating layer 10. This design can not only increase the current contact area, but also improve the instability of the lateral mode of the high-order light due to the wide ridge mesa, and suppress the high-order light lateral mode Lasing.
  • the light-emitting end surface of the semiconductor chip is provided with an anti-reflection coating layer
  • the high-reflection end surface is provided with a high-reflection coating layer.
  • a low-reflectivity anti-reflection film can be provided on the light-emitting end surface
  • a high reflectance film can be provided on the other end surface, that is, the highly reflective end surface. High rate of reflection film.
  • the periods of the multiple groups of lateral gratings are different.
  • the multiple groups of gratings along the first direction may have periods of 2w/( m+1), 2w/(m+2), 2w/(m+3)].
  • the periods of each group of lateral gratings are randomly arranged in the first direction, they can be set in sequence according to the order of the period, or It is not set in sequence according to the period size of the grating, the specific setting method is carried out according to actual needs.
  • a grating structure with a uniform period In the embodiment of the present application, the period of the grating in the lateral direction is d, the width of the optical waveguide is w, and the effective refractive index of the optical waveguide is N.
  • a grating structure is set on the upper waveguide layer.
  • the diffraction effect on the horizontal plane increases the propagation loss of light in the m-th order lateral mode and suppresses the lasing of the m-th order lateral mode, which can increase the power of the semiconductor chip, but at the same time, due to gain modulation and refractive index modulation, Causes light oscillation in the (m-1)/2-order lateral mode, and produces far-field double peaks.
  • the embodiment of the application provides a method for preparing a high-power semiconductor chip, including: sequentially forming a lower confinement layer, a lower waveguide layer, an active layer, and an upper waveguide layer on a substrate; and sequentially along a first direction on the upper waveguide layer Multiple sets of lateral gratings are formed. The periods of the multiple sets of lateral gratings are different. The multiple gratings of each group of lateral gratings are arranged along the second direction, and the first direction intersects the second direction; on the multiple sets of lateral gratings An upper confinement layer, a contact layer, a current isolation dielectric layer and a metal layer are sequentially formed.
  • the production of semiconductor lasers has relatively mature process conditions and process flows.
  • the design of this application is improved on the basis of ordinary high-power lasers, and the process technology can be guaranteed, and the process is relatively not that complicated. So the design is suitable for production.
  • the specific process of the semiconductor chip may include: providing a substrate, the material of the substrate may be GaAs, and the method of metal organic chemical deposition (MOCVD) may be used for sequential epitaxy on the GaAs substrate. Lower confinement layer, lower waveguide layer, active layer, upper waveguide layer.
  • the lateral grating layer is formed by epitaxial growth on the upper waveguide layer, the relevant parameters of the lateral grating (such as period, ratio, material) are determined, and each group of grating fringes is lithographically etched on the lateral grating layer using photolithography, because The period of the lateral grating is relatively long, and the lithography technology can be used directly, and the lithography equipment that can be used is a contact exposure lithography machine. Then, an upper confinement layer and a contact layer are sequentially formed on the lateral grating layer by epitaxial growth. The current injection ridge mesa is formed on the upper contact layer, the upper confinement layer and the upper waveguide layer by photolithography and dry or wet etching.
  • the lower confinement layer, the lower waveguide layer, the active layer, and the upper waveguide layer may be epitaxially grown sequentially on the substrate.
  • each group of grating stripes may be formed by etching trenches on the upper waveguide layer.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
PCT/CN2019/110897 2019-05-13 2019-10-12 一种高功率半导体芯片及其制备方法 Ceased WO2020228233A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021546860A JP7223866B2 (ja) 2019-05-13 2019-10-12 ハイパワー半導体チップ及びその製造方法
US17/426,463 US20220166190A1 (en) 2019-05-13 2019-10-12 High-power semiconductor chip and preparation method therefor

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CN201910395812.3 2019-05-13
CN201910395812.3A CN110112650B (zh) 2019-05-13 2019-05-13 一种高功率半导体芯片及其制备方法

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CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

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EP0288184A2 (en) * 1987-04-21 1988-10-26 Gec-Marconi Limited Semiconductor diode laser array
CN101247025A (zh) * 2007-02-16 2008-08-20 富士通株式会社 具有与导波耦合的衍射光栅的光学器件及其制造方法
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JP2022521688A (ja) 2022-04-12
JP7223866B2 (ja) 2023-02-16
CN110112650A (zh) 2019-08-09
CN110112650B (zh) 2020-06-02

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