JP7223866B2 - ハイパワー半導体チップ及びその製造方法 - Google Patents

ハイパワー半導体チップ及びその製造方法 Download PDF

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JP7223866B2
JP7223866B2 JP2021546860A JP2021546860A JP7223866B2 JP 7223866 B2 JP7223866 B2 JP 7223866B2 JP 2021546860 A JP2021546860 A JP 2021546860A JP 2021546860 A JP2021546860 A JP 2021546860A JP 7223866 B2 JP7223866 B2 JP 7223866B2
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layer
lateral
gratings
semiconductor chip
sets
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JP2022521688A (ja
JPWO2020228233A5 (https=
JP2022521688A5 (https=
Inventor
少陽 譚
俊 王
紅 徐
大勇 閔
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蘇州長光華芯半導体激光創新研究院有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2021546860A 2019-05-13 2019-10-12 ハイパワー半導体チップ及びその製造方法 Active JP7223866B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201910395812.3 2019-05-13
CN201910395812.3A CN110112650B (zh) 2019-05-13 2019-05-13 一种高功率半导体芯片及其制备方法
PCT/CN2019/110897 WO2020228233A1 (zh) 2019-05-13 2019-10-12 一种高功率半导体芯片及其制备方法

Publications (4)

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JP2022521688A JP2022521688A (ja) 2022-04-12
JPWO2020228233A5 JPWO2020228233A5 (https=) 2022-08-23
JP2022521688A5 JP2022521688A5 (https=) 2022-08-23
JP7223866B2 true JP7223866B2 (ja) 2023-02-16

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JP (1) JP7223866B2 (https=)
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WO (1) WO2020228233A1 (https=)

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Publication number Priority date Publication date Assignee Title
CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243019A (ja) 2006-03-10 2007-09-20 Fujitsu Ltd 光半導体素子
JP2008204999A (ja) 2007-02-16 2008-09-04 Fujitsu Ltd 光素子及びその製造方法
JP2010034408A (ja) 2008-07-30 2010-02-12 Sony Corp 半導体発光素子
CN101908715A (zh) 2010-08-03 2010-12-08 中国科学院长春光学精密机械与物理研究所 利用光栅实现锁相的半导体激光器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
KR100674836B1 (ko) * 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
JP2009194290A (ja) * 2008-02-18 2009-08-27 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザの作製方法及び半導体レーザ
CN102142657B (zh) * 2011-03-02 2012-12-12 中国科学院半导体研究所 用于改善条形激光器侧向远场的光子晶体波导的制作方法
CN104917052B (zh) * 2015-07-06 2017-10-24 中国科学院半导体研究所 变周期倾斜光栅激光器及制备方法
KR102475891B1 (ko) * 2015-10-08 2022-12-12 삼성전자주식회사 측면 발광 레이저 광원, 및 이를 포함한 3차원 영상 획득 장치
CN105914580B (zh) * 2016-07-07 2019-01-29 北京工业大学 具有侧向光栅和纵向布喇格反射镜结构的半导体激光器
CN110112650B (zh) * 2019-05-13 2020-06-02 苏州长光华芯半导体激光创新研究院有限公司 一种高功率半导体芯片及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007243019A (ja) 2006-03-10 2007-09-20 Fujitsu Ltd 光半導体素子
JP2008204999A (ja) 2007-02-16 2008-09-04 Fujitsu Ltd 光素子及びその製造方法
JP2010034408A (ja) 2008-07-30 2010-02-12 Sony Corp 半導体発光素子
CN101908715A (zh) 2010-08-03 2010-12-08 中国科学院长春光学精密机械与物理研究所 利用光栅实现锁相的半导体激光器

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WO2020228233A1 (zh) 2020-11-19
US20220166190A1 (en) 2022-05-26
JP2022521688A (ja) 2022-04-12
CN110112650A (zh) 2019-08-09
CN110112650B (zh) 2020-06-02

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