JP2022521688A5 - - Google Patents
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- Publication number
- JP2022521688A5 JP2022521688A5 JP2021546860A JP2021546860A JP2022521688A5 JP 2022521688 A5 JP2022521688 A5 JP 2022521688A5 JP 2021546860 A JP2021546860 A JP 2021546860A JP 2021546860 A JP2021546860 A JP 2021546860A JP 2022521688 A5 JP2022521688 A5 JP 2022521688A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- lateral
- semiconductor chip
- gratings
- chip according
- Prior art date
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910395812.3 | 2019-05-13 | ||
| CN201910395812.3A CN110112650B (zh) | 2019-05-13 | 2019-05-13 | 一种高功率半导体芯片及其制备方法 |
| PCT/CN2019/110897 WO2020228233A1 (zh) | 2019-05-13 | 2019-10-12 | 一种高功率半导体芯片及其制备方法 |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022521688A JP2022521688A (ja) | 2022-04-12 |
| JPWO2020228233A5 JPWO2020228233A5 (https=) | 2022-08-23 |
| JP2022521688A5 true JP2022521688A5 (https=) | 2022-08-23 |
| JP7223866B2 JP7223866B2 (ja) | 2023-02-16 |
Family
ID=67489724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021546860A Active JP7223866B2 (ja) | 2019-05-13 | 2019-10-12 | ハイパワー半導体チップ及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20220166190A1 (https=) |
| JP (1) | JP7223866B2 (https=) |
| CN (1) | CN110112650B (https=) |
| WO (1) | WO2020228233A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112650B (zh) * | 2019-05-13 | 2020-06-02 | 苏州长光华芯半导体激光创新研究院有限公司 | 一种高功率半导体芯片及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2203891A (en) * | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
| KR100674836B1 (ko) * | 2005-02-28 | 2007-01-26 | 삼성전기주식회사 | 고출력 단일모드 반도체 레이저소자 및 그 제조방법 |
| JP2007243019A (ja) * | 2006-03-10 | 2007-09-20 | Fujitsu Ltd | 光半導体素子 |
| JP4312239B2 (ja) * | 2007-02-16 | 2009-08-12 | 富士通株式会社 | 光素子及びその製造方法 |
| JP2009194290A (ja) * | 2008-02-18 | 2009-08-27 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザの作製方法及び半導体レーザ |
| JP2010034408A (ja) * | 2008-07-30 | 2010-02-12 | Sony Corp | 半導体発光素子 |
| CN101908715A (zh) * | 2010-08-03 | 2010-12-08 | 中国科学院长春光学精密机械与物理研究所 | 利用光栅实现锁相的半导体激光器 |
| CN102142657B (zh) * | 2011-03-02 | 2012-12-12 | 中国科学院半导体研究所 | 用于改善条形激光器侧向远场的光子晶体波导的制作方法 |
| CN104917052B (zh) * | 2015-07-06 | 2017-10-24 | 中国科学院半导体研究所 | 变周期倾斜光栅激光器及制备方法 |
| KR102475891B1 (ko) * | 2015-10-08 | 2022-12-12 | 삼성전자주식회사 | 측면 발광 레이저 광원, 및 이를 포함한 3차원 영상 획득 장치 |
| CN105914580B (zh) * | 2016-07-07 | 2019-01-29 | 北京工业大学 | 具有侧向光栅和纵向布喇格反射镜结构的半导体激光器 |
| CN110112650B (zh) * | 2019-05-13 | 2020-06-02 | 苏州长光华芯半导体激光创新研究院有限公司 | 一种高功率半导体芯片及其制备方法 |
-
2019
- 2019-05-13 CN CN201910395812.3A patent/CN110112650B/zh active Active
- 2019-10-12 WO PCT/CN2019/110897 patent/WO2020228233A1/zh not_active Ceased
- 2019-10-12 US US17/426,463 patent/US20220166190A1/en not_active Abandoned
- 2019-10-12 JP JP2021546860A patent/JP7223866B2/ja active Active
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