CN113508502A - 双腔dfb激光器芯片、光发射组件、光模块及光网络装置 - Google Patents

双腔dfb激光器芯片、光发射组件、光模块及光网络装置 Download PDF

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Publication number
CN113508502A
CN113508502A CN201980093475.0A CN201980093475A CN113508502A CN 113508502 A CN113508502 A CN 113508502A CN 201980093475 A CN201980093475 A CN 201980093475A CN 113508502 A CN113508502 A CN 113508502A
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Prior art keywords
grating
dfb laser
laser chip
dual cavity
extending direction
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CN201980093475.0A
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CN113508502B (zh
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黄利新
任正良
王泽林
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本申请提供一种双腔DFB激光器芯片、光发射组件、光模块及光网络装置，在芯片基底组件上方沿光栅延伸方向间隔设置第一光栅和第二光栅。第一光栅的任意一个第一刻蚀区的沿光栅延伸方向的正投影与第二光栅的任意一个第二刻蚀区的沿光栅延伸方向的正投影之间具有相对位移，以使得第一光栅与第二光栅之间具有相位差，且第一光栅和第二光栅经过解理所形成的解理端面相位不同，因此，第一光栅对应的DFB激光器与第二光栅对应的DFB激光器的边模抑制比和斜率效率都会产生明显差异，总有一个DFB激光器的边模抑制比和斜率效率等性能指标满足性能要求，以便在封装时选择性能更优越的DFB激光器进行封装，提高了双腔DFB激光器芯片的成品率。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN201980093475.0A 2019-03-12 2019-03-12 双腔dfb激光器芯片、光发射组件、光模块及光网络装置 Active CN113508502B (zh)

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PCT/CN2019/077864 WO2020181497A1 (zh) 2019-03-12 2019-03-12 双腔dfb激光器芯片、光发射组件、光模块及光网络装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019228426A1 (en) * 2018-05-30 2019-12-05 Huawei Technologies Co., Ltd. Laser chip design

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040131099A1 (en) * 2002-10-28 2004-07-08 Finisar Corporation Process for improving yield of DFB lasers
CN101803133A (zh) * 2007-09-11 2010-08-11 宾奥普迪克斯股份有限公司 多腔刻蚀端面dfb激光器
CN103715607A (zh) * 2013-12-19 2014-04-09 中国科学院半导体研究所 一种可调谐衬底发射量子级联激光器阵列器件
CN105140779A (zh) * 2015-09-07 2015-12-09 南京大学 基于重构-等效啁啾技术的备份型半导体激光器
CN107275925A (zh) * 2017-07-31 2017-10-20 青岛海信宽带多媒体技术有限公司 激光芯片及其制备方法、光模块

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040131099A1 (en) * 2002-10-28 2004-07-08 Finisar Corporation Process for improving yield of DFB lasers
CN101803133A (zh) * 2007-09-11 2010-08-11 宾奥普迪克斯股份有限公司 多腔刻蚀端面dfb激光器
CN103715607A (zh) * 2013-12-19 2014-04-09 中国科学院半导体研究所 一种可调谐衬底发射量子级联激光器阵列器件
CN105140779A (zh) * 2015-09-07 2015-12-09 南京大学 基于重构-等效啁啾技术的备份型半导体激光器
CN107275925A (zh) * 2017-07-31 2017-10-20 青岛海信宽带多媒体技术有限公司 激光芯片及其制备方法、光模块

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JUNSHOU ZHENG ET AL.: "an equivalent-stepped-index-coupled DFB semiconductor laser and laser array realized by stepping the duty cycle of the sampled bragg grating", 《 OPTICS & LASER TECHNOLOGY》 *

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WO2020181497A1 (zh) 2020-09-17

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