JPWO2020221510A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2020221510A5
JPWO2020221510A5 JP2021557159A JP2021557159A JPWO2020221510A5 JP WO2020221510 A5 JPWO2020221510 A5 JP WO2020221510A5 JP 2021557159 A JP2021557159 A JP 2021557159A JP 2021557159 A JP2021557159 A JP 2021557159A JP WO2020221510 A5 JPWO2020221510 A5 JP WO2020221510A5
Authority
JP
Japan
Prior art keywords
layer
superconducting layer
superconducting
component
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021557159A
Other languages
English (en)
Japanese (ja)
Other versions
JP7430198B2 (ja
JP2022530310A (ja
Publication date
Priority claimed from US16/396,992 external-priority patent/US11088310B2/en
Application filed filed Critical
Publication of JP2022530310A publication Critical patent/JP2022530310A/ja
Publication of JPWO2020221510A5 publication Critical patent/JPWO2020221510A5/ja
Application granted granted Critical
Publication of JP7430198B2 publication Critical patent/JP7430198B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021557159A 2019-04-29 2020-03-20 プレーナ型量子デバイスにおけるシリコン貫通ビアの製作 Active JP7430198B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/396,992 2019-04-29
US16/396,992 US11088310B2 (en) 2019-04-29 2019-04-29 Through-silicon-via fabrication in planar quantum devices
PCT/EP2020/057766 WO2020221510A1 (en) 2019-04-29 2020-03-20 Through-silicon-via fabrication in planar quantum devices

Publications (3)

Publication Number Publication Date
JP2022530310A JP2022530310A (ja) 2022-06-29
JPWO2020221510A5 true JPWO2020221510A5 (zh) 2022-08-18
JP7430198B2 JP7430198B2 (ja) 2024-02-09

Family

ID=70189899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021557159A Active JP7430198B2 (ja) 2019-04-29 2020-03-20 プレーナ型量子デバイスにおけるシリコン貫通ビアの製作

Country Status (12)

Country Link
US (1) US11088310B2 (zh)
EP (1) EP3963635A1 (zh)
JP (1) JP7430198B2 (zh)
KR (1) KR102574940B1 (zh)
CN (1) CN113632233A (zh)
AU (1) AU2020265711B2 (zh)
BR (1) BR112021021816A8 (zh)
CA (1) CA3137245A1 (zh)
IL (1) IL287255B2 (zh)
MX (1) MX2021012895A (zh)
SG (1) SG11202109843RA (zh)
WO (1) WO2020221510A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210280763A1 (en) * 2019-12-23 2021-09-09 Microsoft Technology Licensing, Llc Superconductor heterostructures for semiconductor-superconductor hybrid structures
CN113257988B (zh) * 2020-04-01 2022-05-06 阿里巴巴集团控股有限公司 硬掩模及其制备方法、约瑟夫森结的制备方法及超导电路
US11417819B2 (en) * 2020-04-27 2022-08-16 Microsoft Technology Licensing, Llc Forming a bumpless superconductor device by bonding two substrates via a dielectric layer
US11038094B1 (en) * 2021-01-19 2021-06-15 Quantala LLC Superconducting qubit with tapered junction wiring
US11784111B2 (en) 2021-05-28 2023-10-10 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US11631631B2 (en) * 2021-05-28 2023-04-18 Advanced Semiconductor Engineering, Inc. Semiconductor device including via structure for vertical electrical connection
NL2030907B1 (en) * 2022-02-11 2023-08-18 Quantware Holding B V Quantum computing apparatus with interposer, method of fabrication thereof, method of performing a quantum computing operation, quantum computing apparatus comprising tantalum nitride and a method of fabrication thereof
WO2023188391A1 (ja) * 2022-03-31 2023-10-05 富士通株式会社 量子デバイス及び量子デバイスの製造方法
CN115440879B (zh) * 2022-06-16 2023-04-25 合肥本源量子计算科技有限责任公司 超导硅片及其制备方法
GB2626184A (en) * 2023-01-13 2024-07-17 Oxford Instruments Nanotechnology Tools Ltd Methods of manufacturing superconducting via through semiconductor wafer
WO2024154358A1 (ja) * 2023-01-20 2024-07-25 富士通株式会社 デバイスおよびデバイスの製造方法
CN118139515B (zh) * 2024-05-06 2024-08-13 中国科学技术大学 基于通孔结构的超导量子比特器件

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427294A (en) * 1987-04-27 1989-01-30 Fujitsu Ltd Multilayer circuit board for superconducting ceramics circuit and manufacture thereof
JP2003298232A (ja) 2002-04-02 2003-10-17 Sony Corp 多層配線基板の製造方法および多層配線基板
US8580682B2 (en) * 2010-09-30 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Cost-effective TSV formation
US9012322B2 (en) * 2013-04-05 2015-04-21 Intermolecular, Inc. Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
US10671559B2 (en) 2014-03-21 2020-06-02 Google Llc Chips including classical and quantum computing processors
US9524470B1 (en) 2015-06-12 2016-12-20 International Business Machines Corporation Modular array of vertically integrated superconducting qubit devices for scalable quantum computing
US10658424B2 (en) * 2015-07-23 2020-05-19 Massachusetts Institute Of Technology Superconducting integrated circuit
US10396269B2 (en) 2015-11-05 2019-08-27 Massachusetts Institute Of Technology Interconnect structures for assembly of semiconductor structures including superconducting integrated circuits
US10242968B2 (en) * 2015-11-05 2019-03-26 Massachusetts Institute Of Technology Interconnect structure and semiconductor structures for assembly of cryogenic electronic packages
CN105468821B (zh) 2015-11-15 2018-11-02 北京工业大学 利用最小包围圆的tsv自动定位方法
US10381541B2 (en) * 2016-10-11 2019-08-13 Massachusetts Institute Of Technology Cryogenic electronic packages and methods for fabricating cryogenic electronic packages
CN107564868B (zh) 2017-07-07 2019-08-02 清华大学 一种超导量子计算芯片的集成封装结构和方法
US10446736B2 (en) * 2017-11-27 2019-10-15 International Business Machines Corporation Backside coupling with superconducting partial TSV for transmon qubits
US10305015B1 (en) * 2017-11-30 2019-05-28 International Business Machines Corporation Low loss architecture for superconducting qubit circuits
US10243132B1 (en) * 2018-03-23 2019-03-26 International Business Machines Corporation Vertical josephson junction superconducting device
US10497746B1 (en) * 2018-05-25 2019-12-03 International Business Machines Corporation Three-dimensional integration for qubits on crystalline dielectric

Similar Documents

Publication Publication Date Title
JP6742433B2 (ja) 超伝導バンプボンド
CN110431568B (zh) 在堆叠的量子计算装置中的集成电路元件
JPWO2020221510A5 (zh)
US11276727B1 (en) Superconducting vias for routing electrical signals through substrates and their methods of manufacture
US11854833B2 (en) Signal distribution for a quantum computing system
US8455297B1 (en) Method to fabricate high performance carbon nanotube transistor integrated circuits by three-dimensional integration technology
KR20190116452A (ko) 칩 간 정밀 이격용 정지부로서의 필라들
JP2019532506A (ja) イオンミル損傷を低減させるためのキャッピング層
EP3688796B1 (en) Fabrication of apparatus including superconducting wiring layers and interconnects
JP4810074B2 (ja) 超電導デバイス用多層配線の製造方法
RU2021126729A (ru) Изготовление сквозной перемычки через кремний в планарных квантовых устройствах
JP2526402B2 (ja) 超伝導ジョセフソン素子の製造方法
EP4344393A1 (en) Superconducting vacuum-bridged josephson junctions
JPS6257263A (ja) ジヨセフソン集積回路の製造方法
JPS58147183A (ja) ジヨセフソン集積回路の製造方法
JPH09162449A (ja) 半導体結合超伝導素子の製造方法
JPH01243550A (ja) 半導体装置の製造方法
JPS62172774A (ja) ジヨセフソン集積回路の製造方法
JPS63205974A (ja) ジヨセフソン接合の製造方法
JPH02253672A (ja) 高温超電導薄膜回路の製造方法
JPH0638416B2 (ja) 半導体装置
JPH03206625A (ja) 半導体装置の製造方法