SG11202109843RA - Through-silicon-via fabrication in planar quantum devices - Google Patents

Through-silicon-via fabrication in planar quantum devices

Info

Publication number
SG11202109843RA
SG11202109843RA SG11202109843RA SG11202109843RA SG 11202109843R A SG11202109843R A SG 11202109843RA SG 11202109843R A SG11202109843R A SG 11202109843RA SG 11202109843R A SG11202109843R A SG 11202109843RA
Authority
SG
Singapore
Prior art keywords
silicon
quantum devices
via fabrication
planar quantum
planar
Prior art date
Application number
Inventor
Joshua Rubin
Jared Hertzberg
Sami Rosenblatt
Adiga Vivekananda
Markus Brink
Arvind Kumar
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG11202109843RA publication Critical patent/SG11202109843RA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • H10N60/805Constructional details for Josephson-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0241Manufacture or treatment of devices comprising nitrides or carbonitrides
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00Machine learning
    • G06N20/10Machine learning using kernel methods, e.g. support vector machines [SVM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32058Deposition of superconductive layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53285Conductive materials containing superconducting materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0912Manufacture or treatment of Josephson-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/10Junction-based devices
    • H10N60/12Josephson-effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG11202109843R 2019-04-29 2020-03-20 Through-silicon-via fabrication in planar quantum devices SG11202109843RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/396,992 US11088310B2 (en) 2019-04-29 2019-04-29 Through-silicon-via fabrication in planar quantum devices
PCT/EP2020/057766 WO2020221510A1 (en) 2019-04-29 2020-03-20 Through-silicon-via fabrication in planar quantum devices

Publications (1)

Publication Number Publication Date
SG11202109843RA true SG11202109843RA (en) 2021-10-28

Family

ID=70189899

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202109843R SG11202109843RA (en) 2019-04-29 2020-03-20 Through-silicon-via fabrication in planar quantum devices

Country Status (12)

Country Link
US (1) US11088310B2 (en)
EP (1) EP3963635A1 (en)
JP (1) JP7430198B2 (en)
KR (1) KR102574940B1 (en)
CN (1) CN113632233A (en)
AU (1) AU2020265711B2 (en)
BR (1) BR112021021816A8 (en)
CA (1) CA3137245A1 (en)
IL (1) IL287255B2 (en)
MX (1) MX2021012895A (en)
SG (1) SG11202109843RA (en)
WO (1) WO2020221510A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210280763A1 (en) * 2019-12-23 2021-09-09 Microsoft Technology Licensing, Llc Superconductor heterostructures for semiconductor-superconductor hybrid structures
CN113257988B (en) * 2020-04-01 2022-05-06 阿里巴巴集团控股有限公司 Hard mask and preparation method thereof, preparation method of Josephson junction and superconducting circuit
US11417819B2 (en) * 2020-04-27 2022-08-16 Microsoft Technology Licensing, Llc Forming a bumpless superconductor device by bonding two substrates via a dielectric layer
US11038094B1 (en) * 2021-01-19 2021-06-15 Quantala LLC Superconducting qubit with tapered junction wiring
US11631631B2 (en) * 2021-05-28 2023-04-18 Advanced Semiconductor Engineering, Inc. Semiconductor device including via structure for vertical electrical connection
US11784111B2 (en) 2021-05-28 2023-10-10 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
NL2030907B1 (en) * 2022-02-11 2023-08-18 Quantware Holding B V Quantum computing apparatus with interposer, method of fabrication thereof, method of performing a quantum computing operation, quantum computing apparatus comprising tantalum nitride and a method of fabrication thereof
WO2023188391A1 (en) * 2022-03-31 2023-10-05 富士通株式会社 Quantum device and method for manufacturing quantum device
CN115440879B (en) * 2022-06-16 2023-04-25 合肥本源量子计算科技有限责任公司 Superconductive silicon wafer and preparation method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427294A (en) * 1987-04-27 1989-01-30 Fujitsu Ltd Multilayer circuit board for superconducting ceramics circuit and manufacture thereof
JP2003298232A (en) 2002-04-02 2003-10-17 Sony Corp Multilayer wiring board and method of manufacturing the same
US8580682B2 (en) * 2010-09-30 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Cost-effective TSV formation
US9012322B2 (en) * 2013-04-05 2015-04-21 Intermolecular, Inc. Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
CA2943489C (en) 2014-03-21 2019-11-12 Google Inc. Chip including classical and quantum computing processers
US9524470B1 (en) 2015-06-12 2016-12-20 International Business Machines Corporation Modular array of vertically integrated superconducting qubit devices for scalable quantum computing
WO2017015432A1 (en) * 2015-07-23 2017-01-26 Massachusetts Institute Of Technology Superconducting integrated circuit
US10242968B2 (en) * 2015-11-05 2019-03-26 Massachusetts Institute Of Technology Interconnect structure and semiconductor structures for assembly of cryogenic electronic packages
US10121754B2 (en) 2015-11-05 2018-11-06 Massachusetts Institute Of Technology Interconnect structures and methods for fabricating interconnect structures
CN105468821B (en) 2015-11-15 2018-11-02 北京工业大学 Utilize the TSV automatic positioning methods of smallest enclosing circle
US10586909B2 (en) * 2016-10-11 2020-03-10 Massachusetts Institute Of Technology Cryogenic electronic packages and assemblies
CN107564868B (en) 2017-07-07 2019-08-02 清华大学 A kind of integrated encapsulation structure and method of Superconducting Quantum computing chip
US10446736B2 (en) * 2017-11-27 2019-10-15 International Business Machines Corporation Backside coupling with superconducting partial TSV for transmon qubits
US10305015B1 (en) * 2017-11-30 2019-05-28 International Business Machines Corporation Low loss architecture for superconducting qubit circuits
US10243132B1 (en) * 2018-03-23 2019-03-26 International Business Machines Corporation Vertical josephson junction superconducting device
US10497746B1 (en) * 2018-05-25 2019-12-03 International Business Machines Corporation Three-dimensional integration for qubits on crystalline dielectric

Also Published As

Publication number Publication date
JP7430198B2 (en) 2024-02-09
IL287255B2 (en) 2023-08-01
BR112021021816A2 (en) 2022-01-04
MX2021012895A (en) 2021-12-15
WO2020221510A1 (en) 2020-11-05
CA3137245A1 (en) 2020-11-05
AU2020265711A1 (en) 2021-09-30
IL287255B1 (en) 2023-04-01
US11088310B2 (en) 2021-08-10
CN113632233A (en) 2021-11-09
EP3963635A1 (en) 2022-03-09
BR112021021816A8 (en) 2022-01-18
JP2022530310A (en) 2022-06-29
AU2020265711B2 (en) 2023-06-01
US20200343434A1 (en) 2020-10-29
KR20210144761A (en) 2021-11-30
IL287255A (en) 2021-12-01
KR102574940B1 (en) 2023-09-04

Similar Documents

Publication Publication Date Title
IL287255A (en) Through-silicon-via fabrication in planar quantum devices
ZA201806924B (en) Photonic stucture-based devices and compositions for use in luminescent imaging of multiple sites within a pixel, and methods of using the same
EP3577689A4 (en) 3d semiconductor device and structure
EP3443803A4 (en) Licensed-assisted user equipment cooperation in unlicensed sidelink
EP3523825A4 (en) 3d semiconductor device and structure
EP3867952A4 (en) Multi-stack three-dimensional memory devices and methods for forming the same
EP3357084A4 (en) Source-gate region architecture in a vertical power semiconductor device
HK1258435A1 (en) Quantum tokens
GB2621762B (en) Compound distribution in microfluidic devices
EP3692570A4 (en) Leadframes in semiconductor devices
SG10202003846SA (en) Three-Dimensional Semiconductor Devices
IL287440A (en) Antigen specific cd19-targeted car-t cells
IL269706A (en) Three-dimensional semiconductor fabrication
GB201721574D0 (en) Improvements in hair-cutting devices
GB201810383D0 (en) Anti-reflective layers in semicondductor devices
GB201814663D0 (en) Improvements in manufacturing
EP3803969A4 (en) Magnetic structures in integrated circuit packages
GB2571112B (en) Improvements in AWS
EP3493266A4 (en) Semiconductor wafer having three-dimensional structure
GB2594868B (en) Tapered VIA structure in MTJ devices
GB2586901B (en) Improvements in band-driven packaging
GB201901936D0 (en) Improvements in bags
ZA202104362B (en) Itaconate surfactants
GB201902601D0 (en) First person cinema
GB201816551D0 (en) Improvements in packaging