BR112021021816A8 - Fabricação de via através de silício em dispositivos quânticos planares - Google Patents

Fabricação de via através de silício em dispositivos quânticos planares

Info

Publication number
BR112021021816A8
BR112021021816A8 BR112021021816A BR112021021816A BR112021021816A8 BR 112021021816 A8 BR112021021816 A8 BR 112021021816A8 BR 112021021816 A BR112021021816 A BR 112021021816A BR 112021021816 A BR112021021816 A BR 112021021816A BR 112021021816 A8 BR112021021816 A8 BR 112021021816A8
Authority
BR
Brazil
Prior art keywords
superconducting layer
silicon
quantum devices
path
planar quantum
Prior art date
Application number
BR112021021816A
Other languages
English (en)
Other versions
BR112021021816A2 (pt
Inventor
Adiga Vivekananda
Arvind Kumar
Jared Hertzberg
Joshua Rubin
Markus Brink
Sami Rosenblatt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR112021021816A2 publication Critical patent/BR112021021816A2/pt
Publication of BR112021021816A8 publication Critical patent/BR112021021816A8/pt

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/805—Constructional details for Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0241—Manufacture or treatment of devices comprising nitrides or carbonitrides
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G06N20/10—Machine learning using kernel methods, e.g. support vector machines [SVM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32058—Deposition of superconductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

fabricação de via através de silício em dispositivos quânticos planares. em uma primeira camada supercondutora (316) depositada em uma primeira superfície de um substrato (312), um primeiro componente de um ressonador é padronizado. em uma segunda camada supercondutora (326) depositada em uma segunda superfície do substrato (312), um segundo componente do ressonador é padronizado. a primeira superfície e a segunda superfície são dispostas em relação uma à outra em uma disposição não coplanar. no substrato, um recesso é criado, o recesso se estendendo da primeira camada supercondutora para a segunda camada supercondutora. em uma superfície interna do recesso, uma terceira camada supercondutora (322) é depositada, a terceira camada supercondutora formando um caminho supercondutor entre a primeira camada supercondutora e a segunda camada supercondutora. o excesso de material da terceira camada supercondutora é removido da primeira superfície e da segunda superfície, formando um uma via através de silício (tsv) completa(320).
BR112021021816A 2019-04-29 2020-03-20 Fabricação de via através de silício em dispositivos quânticos planares BR112021021816A8 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/396,992 US11088310B2 (en) 2019-04-29 2019-04-29 Through-silicon-via fabrication in planar quantum devices
PCT/EP2020/057766 WO2020221510A1 (en) 2019-04-29 2020-03-20 Through-silicon-via fabrication in planar quantum devices

Publications (2)

Publication Number Publication Date
BR112021021816A2 BR112021021816A2 (pt) 2022-01-04
BR112021021816A8 true BR112021021816A8 (pt) 2022-01-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
BR112021021816A BR112021021816A8 (pt) 2019-04-29 2020-03-20 Fabricação de via através de silício em dispositivos quânticos planares

Country Status (12)

Country Link
US (1) US11088310B2 (pt)
EP (1) EP3963635A1 (pt)
JP (1) JP7430198B2 (pt)
KR (1) KR102574940B1 (pt)
CN (1) CN113632233A (pt)
AU (1) AU2020265711B2 (pt)
BR (1) BR112021021816A8 (pt)
CA (1) CA3137245A1 (pt)
IL (1) IL287255B2 (pt)
MX (1) MX2021012895A (pt)
SG (1) SG11202109843RA (pt)
WO (1) WO2020221510A1 (pt)

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US20210280763A1 (en) * 2019-12-23 2021-09-09 Microsoft Technology Licensing, Llc Superconductor heterostructures for semiconductor-superconductor hybrid structures
CN113257988B (zh) * 2020-04-01 2022-05-06 阿里巴巴集团控股有限公司 硬掩模及其制备方法、约瑟夫森结的制备方法及超导电路
US11417819B2 (en) * 2020-04-27 2022-08-16 Microsoft Technology Licensing, Llc Forming a bumpless superconductor device by bonding two substrates via a dielectric layer
US11038094B1 (en) * 2021-01-19 2021-06-15 Quantala LLC Superconducting qubit with tapered junction wiring
US11784111B2 (en) 2021-05-28 2023-10-10 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US11631631B2 (en) * 2021-05-28 2023-04-18 Advanced Semiconductor Engineering, Inc. Semiconductor device including via structure for vertical electrical connection
NL2030907B1 (en) * 2022-02-11 2023-08-18 Quantware Holding B V Quantum computing apparatus with interposer, method of fabrication thereof, method of performing a quantum computing operation, quantum computing apparatus comprising tantalum nitride and a method of fabrication thereof
WO2023188391A1 (ja) * 2022-03-31 2023-10-05 富士通株式会社 量子デバイス及び量子デバイスの製造方法
CN115440879B (zh) * 2022-06-16 2023-04-25 合肥本源量子计算科技有限责任公司 超导硅片及其制备方法
CN118139515A (zh) * 2024-05-06 2024-06-04 中国科学技术大学 基于通孔结构的超导量子比特器件

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Also Published As

Publication number Publication date
CA3137245A1 (en) 2020-11-05
IL287255B2 (en) 2023-08-01
KR102574940B1 (ko) 2023-09-04
EP3963635A1 (en) 2022-03-09
AU2020265711A1 (en) 2021-09-30
KR20210144761A (ko) 2021-11-30
BR112021021816A2 (pt) 2022-01-04
US20200343434A1 (en) 2020-10-29
JP7430198B2 (ja) 2024-02-09
CN113632233A (zh) 2021-11-09
SG11202109843RA (en) 2021-10-28
AU2020265711B2 (en) 2023-06-01
IL287255A (en) 2021-12-01
IL287255B1 (en) 2023-04-01
WO2020221510A1 (en) 2020-11-05
JP2022530310A (ja) 2022-06-29
MX2021012895A (es) 2021-12-15
US11088310B2 (en) 2021-08-10

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