JPWO2020201865A1 - - Google Patents

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Publication number
JPWO2020201865A1
JPWO2020201865A1 JP2021510571A JP2021510571A JPWO2020201865A1 JP WO2020201865 A1 JPWO2020201865 A1 JP WO2020201865A1 JP 2021510571 A JP2021510571 A JP 2021510571A JP 2021510571 A JP2021510571 A JP 2021510571A JP WO2020201865 A1 JPWO2020201865 A1 JP WO2020201865A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021510571A
Other languages
Japanese (ja)
Other versions
JP7429686B2 (ja
JPWO2020201865A5 (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020201865A1 publication Critical patent/JPWO2020201865A1/ja
Publication of JPWO2020201865A5 publication Critical patent/JPWO2020201865A5/ja
Priority to JP2024010971A priority Critical patent/JP7615370B2/ja
Application granted granted Critical
Publication of JP7429686B2 publication Critical patent/JP7429686B2/ja
Priority to JP2024231656A priority patent/JP7762286B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2021510571A 2019-03-29 2020-03-16 半導体装置 Active JP7429686B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024010971A JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置
JP2024231656A JP7762286B2 (ja) 2019-03-29 2024-12-27 半導体装置

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019065473 2019-03-29
JP2019065475 2019-03-29
JP2019065475 2019-03-29
JP2019065473 2019-03-29
JP2019073992 2019-04-09
JP2019073992 2019-04-09
JP2019102753 2019-05-31
JP2019102753 2019-05-31
PCT/IB2020/052357 WO2020201865A1 (ja) 2019-03-29 2020-03-16 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024010971A Division JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020201865A1 true JPWO2020201865A1 (enExample) 2020-10-08
JPWO2020201865A5 JPWO2020201865A5 (enExample) 2023-02-17
JP7429686B2 JP7429686B2 (ja) 2024-02-08

Family

ID=72666597

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021510571A Active JP7429686B2 (ja) 2019-03-29 2020-03-16 半導体装置
JP2024010971A Active JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置
JP2024231656A Active JP7762286B2 (ja) 2019-03-29 2024-12-27 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024010971A Active JP7615370B2 (ja) 2019-03-29 2024-01-29 半導体装置
JP2024231656A Active JP7762286B2 (ja) 2019-03-29 2024-12-27 半導体装置

Country Status (6)

Country Link
US (2) US11948626B2 (enExample)
JP (3) JP7429686B2 (enExample)
KR (1) KR20210142695A (enExample)
CN (1) CN113646839A (enExample)
TW (2) TW202431270A (enExample)
WO (1) WO2020201865A1 (enExample)

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TW202431270A (zh) * 2019-03-29 2024-08-01 日商半導體能源研究所股份有限公司 半導體裝置
WO2022168160A1 (ja) * 2021-02-02 2022-08-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体メモリ装置
US11749623B2 (en) * 2021-03-31 2023-09-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory devices and methods of manufacturing thereof
TWI769789B (zh) 2021-04-21 2022-07-01 財團法人工業技術研究院 陣列開關電路及系統晶片封裝結構
WO2023152586A1 (ja) * 2022-02-10 2023-08-17 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
KR20240152314A (ko) * 2022-02-18 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JPWO2023166374A1 (enExample) * 2022-03-04 2023-09-07
US11984165B2 (en) * 2022-05-24 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with reduced area
US20250359018A1 (en) * 2022-09-01 2025-11-20 Semiconductor Energy Laboratory Co., Ltd. Memory device
US20240312492A1 (en) * 2023-03-16 2024-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device, memory cell and method
JP2024137039A (ja) * 2023-03-24 2024-10-04 キオクシア株式会社 磁気記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
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JP2010055730A (ja) * 2008-08-29 2010-03-11 Elpida Memory Inc センスアンプ回路及び半導体記憶装置
WO2017055967A1 (en) * 2015-09-30 2017-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2019003045A1 (ja) * 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 記憶装置

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JP3248468B2 (ja) 1997-10-30 2002-01-21 日本電気株式会社 半導体記憶装置
JPH11260054A (ja) * 1998-01-08 1999-09-24 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
JP4260469B2 (ja) 2002-12-16 2009-04-30 株式会社ルネサステクノロジ 半導体記憶装置
KR100746292B1 (ko) * 2006-07-04 2007-08-03 삼성전자주식회사 비휘발성 메모리 장치
JP2008282459A (ja) * 2007-05-08 2008-11-20 Elpida Memory Inc 半導体記憶装置
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JP5596296B2 (ja) * 2008-03-17 2014-09-24 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
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JP2010232398A (ja) * 2009-03-27 2010-10-14 Elpida Memory Inc 半導体装置および半導体装置の制御方法
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TW202431270A (zh) * 2019-03-29 2024-08-01 日商半導體能源研究所股份有限公司 半導體裝置
JP7457006B2 (ja) * 2019-04-26 2024-03-27 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の動作方法
JPWO2020245688A1 (enExample) * 2019-06-04 2020-12-10
JP7629914B2 (ja) * 2020-05-22 2025-02-14 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2010055730A (ja) * 2008-08-29 2010-03-11 Elpida Memory Inc センスアンプ回路及び半導体記憶装置
WO2017055967A1 (en) * 2015-09-30 2017-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2019003045A1 (ja) * 2017-06-27 2019-01-03 株式会社半導体エネルギー研究所 記憶装置

Also Published As

Publication number Publication date
TW202101468A (zh) 2021-01-01
WO2020201865A1 (ja) 2020-10-08
CN113646839A (zh) 2021-11-12
US11948626B2 (en) 2024-04-02
JP7429686B2 (ja) 2024-02-08
JP7615370B2 (ja) 2025-01-16
TW202431270A (zh) 2024-08-01
JP2025063098A (ja) 2025-04-15
US20220180920A1 (en) 2022-06-09
JP2024046762A (ja) 2024-04-04
TWI842855B (zh) 2024-05-21
KR20210142695A (ko) 2021-11-25
US20240194252A1 (en) 2024-06-13
JP7762286B2 (ja) 2025-10-29

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