JPWO2020036819A5 - - Google Patents
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- Publication number
- JPWO2020036819A5 JPWO2020036819A5 JP2021506675A JP2021506675A JPWO2020036819A5 JP WO2020036819 A5 JPWO2020036819 A5 JP WO2020036819A5 JP 2021506675 A JP2021506675 A JP 2021506675A JP 2021506675 A JP2021506675 A JP 2021506675A JP WO2020036819 A5 JPWO2020036819 A5 JP WO2020036819A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- barrier layer
- graphene barrier
- tungsten
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 13
- 229910021389 graphene Inorganic materials 0.000 claims 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 10
- 229910052721 tungsten Inorganic materials 0.000 claims 10
- 239000010937 tungsten Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 8
- 229910052731 fluorine Inorganic materials 0.000 claims 5
- 239000011737 fluorine Substances 0.000 claims 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 claims 4
- 239000003989 dielectric material Substances 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000006467 substitution reaction Methods 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 210000002381 Plasma Anatomy 0.000 claims 1
- 239000005092 Ruthenium Substances 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052803 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862717824P | 2018-08-11 | 2018-08-11 | |
| US62/717,824 | 2018-08-11 | ||
| PCT/US2019/045872 WO2020036819A1 (en) | 2018-08-11 | 2019-08-09 | Graphene diffusion barrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021534572A JP2021534572A (ja) | 2021-12-09 |
| JPWO2020036819A5 true JPWO2020036819A5 (ko) | 2022-08-19 |
Family
ID=69406405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021506675A Pending JP2021534572A (ja) | 2018-08-11 | 2019-08-09 | グラフェン拡散バリア |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10916505B2 (ko) |
| JP (1) | JP2021534572A (ko) |
| KR (2) | KR102637671B1 (ko) |
| CN (1) | CN112514031A (ko) |
| SG (1) | SG11202100359SA (ko) |
| TW (2) | TWI807639B (ko) |
| WO (1) | WO2020036819A1 (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112514031A (zh) * | 2018-08-11 | 2021-03-16 | 应用材料公司 | 石墨烯扩散阻挡物 |
| US11251129B2 (en) * | 2020-03-27 | 2022-02-15 | Intel Corporation | Deposition of graphene on a dielectric surface for next generation interconnects |
| WO2023121714A1 (en) * | 2021-12-22 | 2023-06-29 | General Graphene Corporation | Novel systems and methods for high yield and high throughput production of graphene |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0691108B2 (ja) * | 1988-03-22 | 1994-11-14 | インタ‐ナシヨナル・ビジネス・マシ‐ンズ・コ‐ポレ‐シヨン | 薄膜電界効果トランジスタの製造方法 |
| JPH0484424A (ja) * | 1990-07-27 | 1992-03-17 | Sony Corp | 半導体装置の製造方法 |
| KR100203896B1 (ko) * | 1995-12-15 | 1999-06-15 | 김영환 | 게이트 전극 형성방법 |
| KR100543653B1 (ko) * | 1998-12-28 | 2006-03-28 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
| KR100805843B1 (ko) * | 2001-12-28 | 2008-02-21 | 에이에스엠지니텍코리아 주식회사 | 구리 배선 형성방법, 그에 따라 제조된 반도체 소자 및구리 배선 형성 시스템 |
| KR100968312B1 (ko) * | 2004-06-02 | 2010-07-08 | 인터내셔널 비지네스 머신즈 코포레이션 | 저-ｋ 물질 상의 ＴａＮ 확산장벽 영역의 ＰＥ-ＡＬＤ |
| JP5395542B2 (ja) | 2009-07-13 | 2014-01-22 | 株式会社東芝 | 半導体装置 |
| US20120161098A1 (en) | 2009-08-20 | 2012-06-28 | Nec Corporation | Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element |
| WO2012166562A1 (en) | 2011-05-27 | 2012-12-06 | University Of North Texas | Graphene magnetic tunnel junction spin filters and methods of making |
| KR101437142B1 (ko) * | 2011-10-28 | 2014-09-02 | 제일모직주식회사 | 그라핀 층을 함유하는 배리어 필름과 이를 포함하는 플렉시블 기판 및 그 제조방법 |
| US9324634B2 (en) * | 2011-11-08 | 2016-04-26 | International Business Machines Corporation | Semiconductor interconnect structure having a graphene-based barrier metal layer |
| TWI645511B (zh) * | 2011-12-01 | 2018-12-21 | 美商應用材料股份有限公司 | 用於銅阻障層應用之摻雜的氮化鉭 |
| US8927415B2 (en) * | 2011-12-09 | 2015-01-06 | Intermolecular, Inc. | Graphene barrier layers for interconnects and methods for forming the same |
| KR101357046B1 (ko) * | 2011-12-20 | 2014-02-04 | (재)한국나노기술원 | 금속 확산 방지용 그래핀 층이 구비된 전자 소자 및 제조 방법. |
| US20140339700A1 (en) * | 2011-12-20 | 2014-11-20 | University Of Florida Research Foundation, Inc. | Graphene-based metal diffusion barrier |
| CN102593097A (zh) * | 2012-02-27 | 2012-07-18 | 北京大学 | 一种集成电路金属互连结构及其制备方法 |
| US9472450B2 (en) | 2012-05-10 | 2016-10-18 | Samsung Electronics Co., Ltd. | Graphene cap for copper interconnect structures |
| JP5972735B2 (ja) | 2012-09-21 | 2016-08-17 | 株式会社東芝 | 半導体装置 |
| CN103121670B (zh) * | 2013-02-19 | 2015-04-29 | 西安交通大学 | 远程等离子体增强原子层沉积低温生长石墨烯的方法 |
| JP2015138901A (ja) | 2014-01-23 | 2015-07-30 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP6129772B2 (ja) | 2014-03-14 | 2017-05-17 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
| US9418889B2 (en) * | 2014-06-30 | 2016-08-16 | Lam Research Corporation | Selective formation of dielectric barriers for metal interconnects in semiconductor devices |
| KR102371295B1 (ko) * | 2015-02-16 | 2022-03-07 | 삼성전자주식회사 | 확산 방지층을 포함하는 층 구조물 및 그 제조방법 |
| WO2016156659A1 (en) * | 2015-04-01 | 2016-10-06 | Picosun Oy | Ald-deposited graphene on a conformal seed layer |
| KR20160120891A (ko) | 2015-04-09 | 2016-10-19 | 삼성전자주식회사 | 반도체 장치 |
| KR20160124958A (ko) * | 2015-04-20 | 2016-10-31 | 서울대학교산학협력단 | 반도체 소자 및 그 제조 방법 |
| CN104810476A (zh) * | 2015-05-07 | 2015-07-29 | 中国科学院微电子研究所 | 非挥发性阻变存储器件及其制备方法 |
| JP2017050503A (ja) | 2015-09-04 | 2017-03-09 | 株式会社東芝 | 半導体装置とその製造方法 |
| CN105355620B (zh) * | 2015-12-17 | 2018-06-22 | 上海集成电路研发中心有限公司 | 一种铜互连结构及其制造方法 |
| US11139308B2 (en) * | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10319632B2 (en) * | 2016-12-14 | 2019-06-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor interconnect structure having a graphene barrier layer |
| JP2018152413A (ja) * | 2017-03-10 | 2018-09-27 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US10164018B1 (en) * | 2017-05-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor interconnect structure having graphene-capped metal interconnects |
| KR102496377B1 (ko) * | 2017-10-24 | 2023-02-06 | 삼성전자주식회사 | 저항변화 물질층을 가지는 비휘발성 메모리소자 |
| CN112514031A (zh) * | 2018-08-11 | 2021-03-16 | 应用材料公司 | 石墨烯扩散阻挡物 |
-
2019
- 2019-08-09 CN CN201980050230.XA patent/CN112514031A/zh active Pending
- 2019-08-09 SG SG11202100359SA patent/SG11202100359SA/en unknown
- 2019-08-09 WO PCT/US2019/045872 patent/WO2020036819A1/en active Application Filing
- 2019-08-09 KR KR1020237022970A patent/KR102637671B1/ko active IP Right Grant
- 2019-08-09 JP JP2021506675A patent/JP2021534572A/ja active Pending
- 2019-08-09 KR KR1020217006973A patent/KR102554839B1/ko active IP Right Grant
- 2019-08-09 US US16/536,603 patent/US10916505B2/en active Active
- 2019-08-12 TW TW111105370A patent/TWI807639B/zh active
- 2019-08-12 TW TW108128545A patent/TWI758629B/zh active
-
2021
- 2021-02-09 US US17/171,432 patent/US11621226B2/en active Active
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