JPWO2020031015A5 - - Google Patents

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Publication number
JPWO2020031015A5
JPWO2020031015A5 JP2020535328A JP2020535328A JPWO2020031015A5 JP WO2020031015 A5 JPWO2020031015 A5 JP WO2020031015A5 JP 2020535328 A JP2020535328 A JP 2020535328A JP 2020535328 A JP2020535328 A JP 2020535328A JP WO2020031015 A5 JPWO2020031015 A5 JP WO2020031015A5
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JP
Japan
Prior art keywords
wirings
region
memory
element group
transistor
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JP2020535328A
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English (en)
Japanese (ja)
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JP7485601B2 (ja
JPWO2020031015A1 (https=
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Priority claimed from PCT/IB2019/056433 external-priority patent/WO2020031015A1/ja
Publication of JPWO2020031015A1 publication Critical patent/JPWO2020031015A1/ja
Publication of JPWO2020031015A5 publication Critical patent/JPWO2020031015A5/ja
Priority to JP2024074959A priority Critical patent/JP2024097866A/ja
Application granted granted Critical
Publication of JP7485601B2 publication Critical patent/JP7485601B2/ja
Priority to JP2025166461A priority patent/JP2025185067A/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2020535328A 2018-08-09 2019-07-29 記憶装置 Active JP7485601B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024074959A JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置
JP2025166461A JP2025185067A (ja) 2018-08-09 2025-10-02 記憶装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018150595 2018-08-09
JP2018150387 2018-08-09
JP2018150595 2018-08-09
JP2018150387 2018-08-09
PCT/IB2019/056433 WO2020031015A1 (ja) 2018-08-09 2019-07-29 記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024074959A Division JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置

Publications (3)

Publication Number Publication Date
JPWO2020031015A1 JPWO2020031015A1 (https=) 2020-02-13
JPWO2020031015A5 true JPWO2020031015A5 (https=) 2022-09-14
JP7485601B2 JP7485601B2 (ja) 2024-05-16

Family

ID=69415410

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2020535328A Active JP7485601B2 (ja) 2018-08-09 2019-07-29 記憶装置
JP2024074959A Withdrawn JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置
JP2025166461A Pending JP2025185067A (ja) 2018-08-09 2025-10-02 記憶装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024074959A Withdrawn JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置
JP2025166461A Pending JP2025185067A (ja) 2018-08-09 2025-10-02 記憶装置

Country Status (5)

Country Link
US (2) US11961916B2 (https=)
JP (3) JP7485601B2 (https=)
KR (2) KR102927319B1 (https=)
CN (1) CN112640089B (https=)
WO (1) WO2020031015A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7160894B2 (ja) * 2018-02-23 2022-10-25 株式会社半導体エネルギー研究所 記憶装置
CN115568206A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 存储单元及其制备方法、存储器及其制备方法
CN116863974B (zh) * 2023-09-05 2023-11-21 北京超弦存储器研究院 半导体器件及电子设备

Family Cites Families (27)

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DE69126559T2 (de) 1990-02-26 1997-10-02 Nippon Electric Co Halbleiterspeicheranordnung
JP3013458B2 (ja) * 1990-02-26 2000-02-28 日本電気株式会社 半導体記憶装置
KR100565941B1 (ko) 1997-06-16 2006-03-30 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치
US6091622A (en) 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. Nonvolatile ferroelectric memory device
US6072711A (en) 1997-12-12 2000-06-06 Lg Semicon Co., Ltd. Ferroelectric memory device without a separate cell plate line and method of making the same
US6125051A (en) 1997-12-12 2000-09-26 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
US6128213A (en) 1997-12-12 2000-10-03 Lg Semicon Co., Ltd. Nonvolatile ferroelectric memory and a method of manufacturing the same
KR100261174B1 (ko) 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법
US6418043B1 (en) 1997-12-12 2002-07-09 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
KR100268909B1 (ko) * 1998-04-22 2000-10-16 김영환 비휘발성 강유전체 메모리 소자
US6091623A (en) 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. Split word line ferroelectric memory
US6091624A (en) 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. SWL ferroelectric memory and circuit for driving the same
JP3910047B2 (ja) 2001-11-20 2007-04-25 松下電器産業株式会社 半導体記憶装置
US7956387B2 (en) 2006-09-08 2011-06-07 Qimonda Ag Transistor and memory cell array
US7910986B2 (en) 2007-05-31 2011-03-22 Elpida Memory, Inc. Semiconductor memory device and data processing system
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8455180B2 (en) * 2010-10-29 2013-06-04 Texas Instruments Incorporated Gate CD control using local design on both sides of neighboring dummy gate level features
TWI582999B (zh) * 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
JP2015216179A (ja) * 2014-05-08 2015-12-03 株式会社東芝 半導体記憶装置
JP6359332B2 (ja) * 2014-05-09 2018-07-18 ルネサスエレクトロニクス株式会社 半導体装置
WO2016092416A1 (en) * 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP2018032839A (ja) * 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
JP6517720B2 (ja) * 2016-03-16 2019-05-22 東芝メモリ株式会社 半導体記憶装置
WO2018073708A1 (en) 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device
WO2019220983A1 (ja) * 2018-05-17 2019-11-21 株式会社ソシオネクスト 半導体集積回路装置

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