JP7485601B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP7485601B2
JP7485601B2 JP2020535328A JP2020535328A JP7485601B2 JP 7485601 B2 JP7485601 B2 JP 7485601B2 JP 2020535328 A JP2020535328 A JP 2020535328A JP 2020535328 A JP2020535328 A JP 2020535328A JP 7485601 B2 JP7485601 B2 JP 7485601B2
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Japan
Prior art keywords
transistor
oxide
layer
memory
semiconductor
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JP2020535328A
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Japanese (ja)
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JPWO2020031015A5 (https=
JPWO2020031015A1 (https=
Inventor
達也 大貫
清 加藤
知昭 熱海
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2020031015A1 publication Critical patent/JPWO2020031015A1/ja
Publication of JPWO2020031015A5 publication Critical patent/JPWO2020031015A5/ja
Priority to JP2024074959A priority Critical patent/JP2024097866A/ja
Application granted granted Critical
Publication of JP7485601B2 publication Critical patent/JP7485601B2/ja
Priority to JP2025166461A priority patent/JP2025185067A/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP2020535328A 2018-08-09 2019-07-29 記憶装置 Active JP7485601B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024074959A JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置
JP2025166461A JP2025185067A (ja) 2018-08-09 2025-10-02 記憶装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018150595 2018-08-09
JP2018150387 2018-08-09
JP2018150595 2018-08-09
JP2018150387 2018-08-09
PCT/IB2019/056433 WO2020031015A1 (ja) 2018-08-09 2019-07-29 記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024074959A Division JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置

Publications (3)

Publication Number Publication Date
JPWO2020031015A1 JPWO2020031015A1 (https=) 2020-02-13
JPWO2020031015A5 JPWO2020031015A5 (https=) 2022-09-14
JP7485601B2 true JP7485601B2 (ja) 2024-05-16

Family

ID=69415410

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2020535328A Active JP7485601B2 (ja) 2018-08-09 2019-07-29 記憶装置
JP2024074959A Withdrawn JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置
JP2025166461A Pending JP2025185067A (ja) 2018-08-09 2025-10-02 記憶装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2024074959A Withdrawn JP2024097866A (ja) 2018-08-09 2024-05-02 記憶装置
JP2025166461A Pending JP2025185067A (ja) 2018-08-09 2025-10-02 記憶装置

Country Status (5)

Country Link
US (2) US11961916B2 (https=)
JP (3) JP7485601B2 (https=)
KR (2) KR102927319B1 (https=)
CN (1) CN112640089B (https=)
WO (1) WO2020031015A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7160894B2 (ja) * 2018-02-23 2022-10-25 株式会社半導体エネルギー研究所 記憶装置
CN115568206A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 存储单元及其制备方法、存储器及其制备方法
CN116863974B (zh) * 2023-09-05 2023-11-21 北京超弦存储器研究院 半导体器件及电子设备

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JP2008078645A (ja) 2006-09-08 2008-04-03 Qimonda Ag トランジスタおよびメモリセルアレイ
JP2015216203A (ja) 2014-05-09 2015-12-03 ルネサスエレクトロニクス株式会社 半導体装置
JP2016213468A (ja) 2015-05-11 2016-12-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2017120937A (ja) 2011-03-25 2017-07-06 株式会社半導体エネルギー研究所 半導体装置
JP2017162538A (ja) 2011-04-29 2017-09-14 株式会社半導体エネルギー研究所 半導体記憶装置
JP2018073453A (ja) 2016-10-20 2018-05-10 株式会社半導体エネルギー研究所 記憶装置とその動作方法、並びに半導体装置、電子部品および電子機器

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Publication number Priority date Publication date Assignee Title
JP2008078645A (ja) 2006-09-08 2008-04-03 Qimonda Ag トランジスタおよびメモリセルアレイ
JP2017120937A (ja) 2011-03-25 2017-07-06 株式会社半導体エネルギー研究所 半導体装置
JP2017162538A (ja) 2011-04-29 2017-09-14 株式会社半導体エネルギー研究所 半導体記憶装置
JP2015216203A (ja) 2014-05-09 2015-12-03 ルネサスエレクトロニクス株式会社 半導体装置
JP2016213468A (ja) 2015-05-11 2016-12-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2018073453A (ja) 2016-10-20 2018-05-10 株式会社半導体エネルギー研究所 記憶装置とその動作方法、並びに半導体装置、電子部品および電子機器

Also Published As

Publication number Publication date
JP2024097866A (ja) 2024-07-19
CN112640089B (zh) 2026-02-24
KR102927319B1 (ko) 2026-02-19
KR20210039392A (ko) 2021-04-09
US20240250182A1 (en) 2024-07-25
JP2025185067A (ja) 2025-12-18
US11961916B2 (en) 2024-04-16
WO2020031015A1 (ja) 2020-02-13
US12604498B2 (en) 2026-04-14
KR102734785B1 (ko) 2024-11-28
US20210273110A1 (en) 2021-09-02
CN112640089A (zh) 2021-04-09
JPWO2020031015A1 (https=) 2020-02-13
KR20240169720A (ko) 2024-12-03

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