CN112640089B - 存储装置 - Google Patents

存储装置

Info

Publication number
CN112640089B
CN112640089B CN201980051607.3A CN201980051607A CN112640089B CN 112640089 B CN112640089 B CN 112640089B CN 201980051607 A CN201980051607 A CN 201980051607A CN 112640089 B CN112640089 B CN 112640089B
Authority
CN
China
Prior art keywords
transistor
oxide
layer
wirings
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980051607.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN112640089A (zh
Inventor
大贯达也
加藤清
热海知昭
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN112640089A publication Critical patent/CN112640089A/zh
Application granted granted Critical
Publication of CN112640089B publication Critical patent/CN112640089B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN201980051607.3A 2018-08-09 2019-07-29 存储装置 Active CN112640089B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018150595 2018-08-09
JP2018-150387 2018-08-09
JP2018-150595 2018-08-09
JP2018150387 2018-08-09
PCT/IB2019/056433 WO2020031015A1 (ja) 2018-08-09 2019-07-29 記憶装置

Publications (2)

Publication Number Publication Date
CN112640089A CN112640089A (zh) 2021-04-09
CN112640089B true CN112640089B (zh) 2026-02-24

Family

ID=69415410

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980051607.3A Active CN112640089B (zh) 2018-08-09 2019-07-29 存储装置

Country Status (5)

Country Link
US (2) US11961916B2 (https=)
JP (3) JP7485601B2 (https=)
KR (2) KR102927319B1 (https=)
CN (1) CN112640089B (https=)
WO (1) WO2020031015A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7160894B2 (ja) * 2018-02-23 2022-10-25 株式会社半導体エネルギー研究所 記憶装置
CN115568206A (zh) * 2021-07-02 2023-01-03 长鑫存储技术有限公司 存储单元及其制备方法、存储器及其制备方法
CN116863974B (zh) * 2023-09-05 2023-11-21 北京超弦存储器研究院 半导体器件及电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174648A (zh) * 2006-09-08 2008-05-07 奇梦达股份公司 晶体管及存储单元阵列

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69126559T2 (de) 1990-02-26 1997-10-02 Nippon Electric Co Halbleiterspeicheranordnung
JP3013458B2 (ja) * 1990-02-26 2000-02-28 日本電気株式会社 半導体記憶装置
KR100565941B1 (ko) 1997-06-16 2006-03-30 가부시키가이샤 히타치세이사쿠쇼 반도체집적회로장치
US6091622A (en) 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. Nonvolatile ferroelectric memory device
US6072711A (en) 1997-12-12 2000-06-06 Lg Semicon Co., Ltd. Ferroelectric memory device without a separate cell plate line and method of making the same
US6125051A (en) 1997-12-12 2000-09-26 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
US6128213A (en) 1997-12-12 2000-10-03 Lg Semicon Co., Ltd. Nonvolatile ferroelectric memory and a method of manufacturing the same
KR100261174B1 (ko) 1997-12-12 2000-07-01 김영환 비휘발성 강유전체 메모리 및 그의 제조 방법
US6418043B1 (en) 1997-12-12 2002-07-09 Hyundai Electronics Industries Co., Ltd. Circuit for driving nonvolatile ferroelectric memory
KR100268909B1 (ko) * 1998-04-22 2000-10-16 김영환 비휘발성 강유전체 메모리 소자
US6091623A (en) 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. Split word line ferroelectric memory
US6091624A (en) 1997-12-12 2000-07-18 Lg Semicon Co., Ltd. SWL ferroelectric memory and circuit for driving the same
JP3910047B2 (ja) 2001-11-20 2007-04-25 松下電器産業株式会社 半導体記憶装置
US7910986B2 (en) 2007-05-31 2011-03-22 Elpida Memory, Inc. Semiconductor memory device and data processing system
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
US8455180B2 (en) * 2010-10-29 2013-06-04 Texas Instruments Incorporated Gate CD control using local design on both sides of neighboring dummy gate level features
TWI582999B (zh) * 2011-03-25 2017-05-11 半導體能源研究所股份有限公司 場效電晶體及包含該場效電晶體之記憶體與半導體電路
KR101963457B1 (ko) 2011-04-29 2019-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치 및 그 구동 방법
JP2015216179A (ja) * 2014-05-08 2015-12-03 株式会社東芝 半導体記憶装置
JP6359332B2 (ja) * 2014-05-09 2018-07-18 ルネサスエレクトロニクス株式会社 半導体装置
WO2016092416A1 (en) * 2014-12-11 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, and electronic device
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
JP2018032839A (ja) * 2015-12-11 2018-03-01 株式会社半導体エネルギー研究所 トランジスタ、回路、半導体装置、表示装置および電子機器
JP6517720B2 (ja) * 2016-03-16 2019-05-22 東芝メモリ株式会社 半導体記憶装置
WO2018073708A1 (en) 2016-10-20 2018-04-26 Semiconductor Energy Laboratory Co., Ltd. Storage device, driving method thereof, semiconductor device, electronic component, and electronic device
WO2019220983A1 (ja) * 2018-05-17 2019-11-21 株式会社ソシオネクスト 半導体集積回路装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174648A (zh) * 2006-09-08 2008-05-07 奇梦达股份公司 晶体管及存储单元阵列

Also Published As

Publication number Publication date
JP2024097866A (ja) 2024-07-19
KR102927319B1 (ko) 2026-02-19
KR20210039392A (ko) 2021-04-09
US20240250182A1 (en) 2024-07-25
JP2025185067A (ja) 2025-12-18
US11961916B2 (en) 2024-04-16
WO2020031015A1 (ja) 2020-02-13
JP7485601B2 (ja) 2024-05-16
US12604498B2 (en) 2026-04-14
KR102734785B1 (ko) 2024-11-28
US20210273110A1 (en) 2021-09-02
CN112640089A (zh) 2021-04-09
JPWO2020031015A1 (https=) 2020-02-13
KR20240169720A (ko) 2024-12-03

Similar Documents

Publication Publication Date Title
JP7419453B2 (ja) 半導体装置
US12604498B2 (en) Memory device
JP2024019354A (ja) 記憶装置
CN120266595A (zh) 半导体装置
TW202425145A (zh) 記憶體裝置
JP2026050393A (ja) 半導体装置
KR20240152330A (ko) 반도체 장치, 및 반도체 장치의 제작 방법
CN118696612A (zh) 半导体装置以及半导体装置的制造方法
JP7171226B2 (ja) 記憶装置
CN118575282A (zh) 半导体装置
JP2025188139A (ja) 半導体装置の作製方法
KR20240148840A (ko) 반도체 장치
WO2023161757A1 (ja) 半導体装置
WO2023175422A1 (ja) 半導体装置
CN118872401A (zh) 半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant