JPWO2020014441A5 - - Google Patents
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- JPWO2020014441A5 JPWO2020014441A5 JP2020573143A JP2020573143A JPWO2020014441A5 JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5 JP 2020573143 A JP2020573143 A JP 2020573143A JP 2020573143 A JP2020573143 A JP 2020573143A JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- multilayer structure
- structure according
- crystal silicon
- silicon wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023039665A JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862697474P | 2018-07-13 | 2018-07-13 | |
US62/697,474 | 2018-07-13 | ||
PCT/US2019/041345 WO2020014441A1 (en) | 2018-07-13 | 2019-07-11 | Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023039665A Division JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2021532570A JP2021532570A (ja) | 2021-11-25 |
JPWO2020014441A5 true JPWO2020014441A5 (de) | 2022-07-20 |
JP7248711B2 JP7248711B2 (ja) | 2023-03-29 |
Family
ID=67303527
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020572765A Active JP7275172B2 (ja) | 2018-07-13 | 2019-06-28 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
JP2020573143A Active JP7248711B2 (ja) | 2018-07-13 | 2019-07-11 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
JP2023039665A Pending JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
JP2023075619A Active JP7470233B2 (ja) | 2018-07-13 | 2023-05-01 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020572765A Active JP7275172B2 (ja) | 2018-07-13 | 2019-06-28 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023039665A Pending JP2023088940A (ja) | 2018-07-13 | 2023-03-14 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 |
JP2023075619A Active JP7470233B2 (ja) | 2018-07-13 | 2023-05-01 | 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム |
Country Status (8)
Country | Link |
---|---|
US (6) | US10943813B2 (de) |
EP (3) | EP3821459B1 (de) |
JP (4) | JP7275172B2 (de) |
KR (4) | KR102551310B1 (de) |
CN (3) | CN112400224A (de) |
SG (2) | SG11202013101XA (de) |
TW (5) | TWI819956B (de) |
WO (2) | WO2020014007A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3066858B1 (fr) * | 2017-05-23 | 2019-06-21 | Soitec | Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence |
US10943813B2 (en) | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
US11362176B2 (en) * | 2020-05-28 | 2022-06-14 | Taiwan Semiconductor Manufacturing Company Limited | RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same |
US11515397B2 (en) * | 2020-07-21 | 2022-11-29 | Globalfoundries U.S. Inc. | III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layer |
FR3116151A1 (fr) * | 2020-11-10 | 2022-05-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de formation d’une structure de piegeage d’un substrat utile |
US11658177B2 (en) * | 2020-12-07 | 2023-05-23 | Globalfoundries U.S. Inc. | Semiconductor device structures with a substrate biasing scheme |
CN114023633A (zh) * | 2021-10-29 | 2022-02-08 | 苏州华太电子技术有限公司 | 碳化硅器件的栅氧化层的制备方法与碳化硅器件 |
JP2024070722A (ja) * | 2022-11-11 | 2024-05-23 | 信越半導体株式会社 | 高周波デバイス用基板およびその製造方法 |
Family Cites Families (45)
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JP2617798B2 (ja) | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
JP2000082679A (ja) | 1998-07-08 | 2000-03-21 | Canon Inc | 半導体基板とその作製方法 |
DE60041309D1 (de) | 1999-03-16 | 2009-02-26 | Shinetsu Handotai Kk | Herstellungsverfahren für siliziumwafer und siliziumwafer |
US6653209B1 (en) | 1999-09-30 | 2003-11-25 | Canon Kabushiki Kaisha | Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device |
JP2001278692A (ja) | 2000-03-29 | 2001-10-10 | Shin Etsu Handotai Co Ltd | シリコンウエーハおよびシリコン単結晶の製造方法 |
JP4463957B2 (ja) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
US6448152B1 (en) * | 2001-02-20 | 2002-09-10 | Silicon Genesis Corporation | Method and system for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer |
WO2002084728A1 (en) | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Control of thermal donor formation in high resistivity cz silicon |
KR100745312B1 (ko) * | 2001-04-10 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 고저항율의 초크랄스키 실리콘 내의 열적 도너 형성의 제어 |
KR100543252B1 (ko) | 2001-05-29 | 2006-01-20 | 신닛뽄세이테쯔 카부시키카이샤 | Soi 기판 |
DE10131249A1 (de) | 2001-06-28 | 2002-05-23 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material |
KR100920862B1 (ko) * | 2001-12-21 | 2009-10-09 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼의 제조 방법 |
US7153757B2 (en) | 2002-08-29 | 2006-12-26 | Analog Devices, Inc. | Method for direct bonding two silicon wafers for minimising interfacial oxide and stresses at the bond interface, and an SOI structure |
DE102004021113B4 (de) | 2004-04-29 | 2006-04-20 | Siltronic Ag | SOI-Scheibe und Verfahren zu ihrer Herstellung |
US7473614B2 (en) * | 2004-11-12 | 2009-01-06 | Intel Corporation | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer |
CN101228301A (zh) | 2005-05-19 | 2008-07-23 | Memc电子材料有限公司 | 高电阻率硅结构和用于制备该结构的方法 |
JP4631717B2 (ja) | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
MY157902A (en) | 2006-05-19 | 2016-08-15 | Memc Electronic Materials | Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth |
JP2008263087A (ja) * | 2007-04-12 | 2008-10-30 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
US20100193900A1 (en) | 2007-07-13 | 2010-08-05 | National University Corporation Tohoku University | Soi substrate and semiconductor device using an soi substrate |
SG161151A1 (en) | 2008-10-22 | 2010-05-27 | Semiconductor Energy Lab | Soi substrate and method for manufacturing the same |
US8263484B2 (en) * | 2009-03-03 | 2012-09-11 | Sumco Corporation | High resistivity silicon wafer and method for manufacturing the same |
US8389319B2 (en) * | 2009-07-31 | 2013-03-05 | Sri International | SOI-based CMOS imagers employing flash gate/chemisorption processing |
WO2012125632A1 (en) * | 2011-03-16 | 2012-09-20 | Memc Electronic Materials, Inc. | Silicon on insulator structures having high resistivity regions in the handle wafer and methods for producing such structures |
FR2973159B1 (fr) * | 2011-03-22 | 2013-04-19 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat de base |
JP2013129564A (ja) * | 2011-12-21 | 2013-07-04 | Siltronic Ag | シリコン単結晶基板およびその製造方法 |
WO2015003022A1 (en) | 2013-07-01 | 2015-01-08 | Solexel, Inc. | High-throughput thermal processing methods for producing high-efficiency crystalline silicon solar cells |
US9768056B2 (en) * | 2013-10-31 | 2017-09-19 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si deposition |
US9853133B2 (en) | 2014-09-04 | 2017-12-26 | Sunedison Semiconductor Limited (Uen201334164H) | Method of manufacturing high resistivity silicon-on-insulator substrate |
EP3221884B1 (de) * | 2014-11-18 | 2022-06-01 | GlobalWafers Co., Ltd. | Hochbeständiger soi-wafer mit ladungsabfangenden schichten und, verfahren zu deren herstellung |
US10483152B2 (en) * | 2014-11-18 | 2019-11-19 | Globalwafers Co., Ltd. | High resistivity semiconductor-on-insulator wafer and a method of manufacturing |
WO2016140850A1 (en) * | 2015-03-03 | 2016-09-09 | Sunedison Semiconductor Limited | Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress |
US9881832B2 (en) * | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
JP6533309B2 (ja) | 2015-06-01 | 2019-06-19 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | 多層構造体の製造方法 |
FR3037438B1 (fr) * | 2015-06-09 | 2017-06-16 | Soitec Silicon On Insulator | Procede de fabrication d'un element semi-conducteur comprenant une couche de piegeage de charges |
JP6447439B2 (ja) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
US9831115B2 (en) * | 2016-02-19 | 2017-11-28 | Sunedison Semiconductor Limited (Uen201334164H) | Process flow for manufacturing semiconductor on insulator structures in parallel |
CN116314384A (zh) | 2016-06-08 | 2023-06-23 | 环球晶圆股份有限公司 | 具有经改进的机械强度的高电阻率单晶硅锭及晶片 |
US10269617B2 (en) * | 2016-06-22 | 2019-04-23 | Globalwafers Co., Ltd. | High resistivity silicon-on-insulator substrate comprising an isolation region |
CN110178211B (zh) * | 2016-10-26 | 2022-12-13 | 环球晶圆股份有限公司 | 具有增强电荷俘获效率的高电阻率绝缘体上硅衬底 |
US10468295B2 (en) | 2016-12-05 | 2019-11-05 | GlobalWafers Co. Ltd. | High resistivity silicon-on-insulator structure and method of manufacture thereof |
US9984949B1 (en) * | 2017-01-12 | 2018-05-29 | International Business Machines Corporation | Surface passivation having reduced interface defect density |
JP6696917B2 (ja) | 2017-01-18 | 2020-05-20 | 信越化学工業株式会社 | 複合基板の製造方法 |
US10943813B2 (en) * | 2018-07-13 | 2021-03-09 | Globalwafers Co., Ltd. | Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability |
EP3623801B1 (de) * | 2018-09-14 | 2022-11-02 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Verfahren zur bestimmung der wärmespenderkonzentration einer halbleiterprobe |
-
2019
- 2019-06-26 US US16/452,762 patent/US10943813B2/en active Active
- 2019-06-28 KR KR1020207038000A patent/KR102551310B1/ko active IP Right Grant
- 2019-06-28 SG SG11202013101XA patent/SG11202013101XA/en unknown
- 2019-06-28 JP JP2020572765A patent/JP7275172B2/ja active Active
- 2019-06-28 CN CN201980044763.7A patent/CN112400224A/zh active Pending
- 2019-06-28 EP EP19740463.5A patent/EP3821459B1/de active Active
- 2019-06-28 WO PCT/US2019/039714 patent/WO2020014007A1/en unknown
- 2019-06-28 KR KR1020237022150A patent/KR20230107698A/ko active Application Filing
- 2019-07-08 TW TW112103365A patent/TWI819956B/zh active
- 2019-07-08 TW TW108124016A patent/TWI794525B/zh active
- 2019-07-08 TW TW112136233A patent/TW202401587A/zh unknown
- 2019-07-11 WO PCT/US2019/041345 patent/WO2020014441A1/en unknown
- 2019-07-11 US US16/508,606 patent/US11075109B2/en active Active
- 2019-07-11 SG SG11202013102VA patent/SG11202013102VA/en unknown
- 2019-07-11 EP EP19748626.9A patent/EP3821460B1/de active Active
- 2019-07-11 KR KR1020237021751A patent/KR20230098926A/ko active Application Filing
- 2019-07-11 JP JP2020573143A patent/JP7248711B2/ja active Active
- 2019-07-11 CN CN202210670187.0A patent/CN114975085A/zh active Pending
- 2019-07-11 EP EP23175768.3A patent/EP4235748A3/de active Pending
- 2019-07-11 KR KR1020207038023A patent/KR102550133B1/ko active IP Right Grant
- 2019-07-11 CN CN201980044762.2A patent/CN112385031B/zh active Active
- 2019-07-12 TW TW108124773A patent/TWI784184B/zh active
- 2019-07-12 TW TW111139265A patent/TWI828374B/zh active
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2021
- 2021-02-03 US US17/166,039 patent/US11532501B2/en active Active
- 2021-04-19 US US17/234,023 patent/US11626318B2/en active Active
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2022
- 2022-10-19 US US18/047,844 patent/US11887885B2/en active Active
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2023
- 2023-03-13 US US18/182,823 patent/US11942360B2/en active Active
- 2023-03-14 JP JP2023039665A patent/JP2023088940A/ja active Pending
- 2023-05-01 JP JP2023075619A patent/JP7470233B2/ja active Active
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