JPWO2020014441A5 - - Google Patents

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JPWO2020014441A5
JPWO2020014441A5 JP2020573143A JP2020573143A JPWO2020014441A5 JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5 JP 2020573143 A JP2020573143 A JP 2020573143A JP 2020573143 A JP2020573143 A JP 2020573143A JP WO2020014441 A5 JPWO2020014441 A5 JP WO2020014441A5
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single crystal
multilayer structure
structure according
crystal silicon
silicon wafer
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JP2020573143A
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Japanese (ja)
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JP7248711B2 (ja
JP2021532570A (ja
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Priority claimed from PCT/US2019/041345 external-priority patent/WO2020014441A1/en
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Priority to JP2023039665A priority Critical patent/JP2023088940A/ja
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JP2020573143A 2018-07-13 2019-07-11 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造 Active JP7248711B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023039665A JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862697474P 2018-07-13 2018-07-13
US62/697,474 2018-07-13
PCT/US2019/041345 WO2020014441A1 (en) 2018-07-13 2019-07-11 Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

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JP2023039665A Division JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造

Publications (3)

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JP2021532570A JP2021532570A (ja) 2021-11-25
JPWO2020014441A5 true JPWO2020014441A5 (de) 2022-07-20
JP7248711B2 JP7248711B2 (ja) 2023-03-29

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JP2020572765A Active JP7275172B2 (ja) 2018-07-13 2019-06-28 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム
JP2020573143A Active JP7248711B2 (ja) 2018-07-13 2019-07-11 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造
JP2023039665A Pending JP2023088940A (ja) 2018-07-13 2023-03-14 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ構造
JP2023075619A Active JP7470233B2 (ja) 2018-07-13 2023-05-01 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム

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JP2020572765A Active JP7275172B2 (ja) 2018-07-13 2019-06-28 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム

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JP2023075619A Active JP7470233B2 (ja) 2018-07-13 2023-05-01 優れた性能、安定性および製造性を有する無線周波数シリコン・オン・インシュレータ・ウエハ・プラットフォーム

Country Status (8)

Country Link
US (6) US10943813B2 (de)
EP (3) EP3821459B1 (de)
JP (4) JP7275172B2 (de)
KR (4) KR102551310B1 (de)
CN (3) CN112400224A (de)
SG (2) SG11202013101XA (de)
TW (5) TWI819956B (de)
WO (2) WO2020014007A1 (de)

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