JPWO2020012799A1 - Inspection jig and inspection equipment - Google Patents

Abstract

A substantially rod-shaped probe Pr having one end Pa connected to the inspection point 101 of the inspection object (100), a body Pc connected to the one end Pa, and the other end Pb connected to the body Pc. The probe includes a support member 31 that supports the probe Pr, and the probe has a locking portion that is detachably locked to a contact portion provided on the support member. At the time of inspection using the probe, it is configured to separate from the contact portion when a compressive load of a certain value or more is applied in the axial direction of the probe.

Description

The present invention relates to an inspection jig and an inspection device used for inspecting an inspection object.

Conventionally, a plurality of needle-shaped probes are brought into contact with an inspection point of an inspection object such as a semiconductor chip or a substrate on which a circuit or wiring is formed, and an electric signal is applied between the probes, or between the probes. The inspection object is inspected by measuring the voltage. When a plurality of probes are brought into contact with the inspection point in this way, the probes may bend and come into contact with adjacent probes.

Therefore, the needle tip portion, the needle intermediate portion following the needle tip portion, and the needle rear portion following the needle intermediate portion are included, and the needle tip portion, the needle intermediate portion, and the needle rear portion each have a plate-like region, and the needle has a needle. An inspection jig having a probe in which the width direction of the plate-shaped region at the tip and the rear of the needle is set at an angle of approximately 90 degrees with respect to the width direction of the plate-shaped region at the middle of the needle when viewed from the needle tip side or the needle rear end side. A jig (probe unit) is known (see, for example, Patent Document 1).

Patent Document 1 defines the direction of each probe by inserting the plate-shaped regions of the needle tip and the needle rear portion into the slit, and controls the bending direction of the probe by the plate-shaped region of the needle intermediate portion. By elastically deforming adjacent probes in the same direction at the time of generation, the probes can be arranged at a narrow pitch, and by elastically deforming the plate-like region, the needle tip is slid along the electrode surface to be inspected. It is described that the oxide film formed on the electrode surface of the above can be removed.

Japanese Unexamined Patent Publication No. 2001-74779

However, even if the needle tip of the probe is slid along the electrode surface as in the inspection jig described in Patent Document 1 described above, the pressure contact force of the probe with respect to the electrode surface of the inspection object is insufficient. It is difficult to properly remove the oxide film on the electrode surface. Therefore, it is necessary to secure a sufficient pressure contact force of the probe with respect to the electrode. However, if this pressure contact force becomes excessively high, the inspection object may be adversely affected.

An object of the present invention is to provide an inspection jig and an inspection apparatus capable of appropriately removing an oxide film on an electrode surface while suppressing an excessively high pressure contact force of a probe with respect to an electrode of an inspection object. It is to be.

The inspection jig according to the present invention includes a substantially rod-shaped probe having one end portion conductively connected to the inspection point of the inspection object, a body portion connected to the one end portion, and a substantially rod-shaped probe connected to the body portion. The probe includes a support member that supports the probe, and the probe has a locking portion that is detachably locked to a contact portion provided on the support member, and the locking portion holds the probe. During the inspection used, it is configured to separate from the contact portion when a compressive load of a certain value or more is applied in the axial direction of the probe.

Further, the inspection device according to the present invention is provided with the above-mentioned inspection jig, and inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.

It is a conceptual diagram which shows schematic structure of the semiconductor inspection apparatus provided with the inspection jig which concerns on 1st Embodiment of this invention. It is a side view which shows an example of the probe provided in the inspection jig. FIG. 2 is a cross-sectional view taken along the line III-III of FIG. It is sectional drawing which shows the structure of the inspection part provided in the inspection apparatus. It is sectional drawing which shows the structure of the inspection jig provided in the inspection part. It is sectional drawing which shows the initial stage of inspection using a probe. It is sectional drawing which shows the late stage of the inspection using a probe. It is a graph which shows the relationship between the compressive deformation amount of a probe, and the compressive stress. It is sectional drawing which shows the structure of the inspection jig which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the modification of the inspection jig which concerns on 2nd Embodiment of this invention. It is sectional drawing which shows the structure of the inspection jig which concerns on 3rd Embodiment of this invention. It is sectional drawing which shows the late stage of inspection in 3rd Embodiment. It is sectional drawing which shows the structure of the inspection jig which concerns on 4th Embodiment of this invention. It is sectional drawing which shows the late stage of inspection in 4th Embodiment of an inspection jig.

Hereinafter, embodiments according to the present invention will be described with reference to the drawings. It should be noted that the configurations with the same reference numerals in the respective figures indicate that they are the same configurations, and the description thereof will be omitted.
(First Embodiment)

FIG. 1 is a conceptual diagram schematically showing a configuration of a semiconductor inspection device 1 provided with an inspection jig 3 according to the first embodiment of the present invention. The semiconductor inspection device 1 shown in FIG. 1 corresponds to an example of the inspection device according to the present invention, and inspects a circuit formed on a semiconductor wafer 100 which is an example of an inspection object.

In the semiconductor wafer 100, circuits corresponding to a plurality of semiconductor chips are formed on a semiconductor substrate such as silicon. The inspection target may be an electronic component such as a semiconductor chip, a CSP (Chip size package), a semiconductor element (IC: Integrated Circuit), or any other object to be inspected electrically. ..

Further, the inspection device is not limited to the semiconductor inspection device 1, and may be, for example, a substrate inspection device for inspecting a substrate. The substrate to be inspected may be, for example, a printed wiring board, a glass epoxy board, a flexible substrate, a ceramic multilayer wiring board, a package substrate for a semiconductor package, an interposer substrate, a film carrier, or the like, and may be a liquid crystal display, EL. It may be an electrode plate for a display such as a (Electro-Luminescence) display or a touch panel display, an electrode plate for a touch panel or the like, or various substrates.

The semiconductor inspection device 1 shown in FIG. 1 includes an inspection unit 4, a sample table 6, and an inspection processing unit 8. On the upper surface of the sample table 6, a mounting portion 6a is provided on which the semiconductor wafer 100 is mounted and fixed at a predetermined position.

The mounting portion 6a is configured so as to be supported so as to be able to move up and down, for example, to raise the semiconductor wafer 100 housed in the sample table 6 to the inspection position, and to store the inspected semiconductor wafer 100 in the sample table 6. ing. Further, the mounting portion 6a has a rotation mechanism capable of rotating, for example, the semiconductor wafer 100 to orient the orientation flat in a predetermined direction. Further, the semiconductor inspection device 1 includes a robot arm (not shown) capable of mounting the semiconductor wafer 100 on the mounting portion 6a and carrying out the inspected semiconductor wafer 100 from the mounting portion 6a. It is equipped with a transport mechanism.

The inspection unit 4 includes an inspection jig 3, a first pitch conversion block 35, a second pitch conversion block 36, and a connection plate 37. The inspection jig 3 is a jig for inspecting the semiconductor wafer 100 by bringing a plurality of probes Pr into contact with each other, and is configured as, for example, a so-called probe card.

A plurality of chips are formed on the semiconductor wafer 100. Each chip is provided with inspection points such as electrodes, wiring patterns, solder bumps, and connection terminals. The inspection jig 3 is arranged so as to correspond to each inspection point provided in a part of the plurality of chips formed on the semiconductor wafer 100 (for example, the inspection region shown by hatching in FIG. 1). Holds the probe Pr of.

When the probe Pr is brought into contact with each inspection point in the inspection area and the inspection in the inspection area is completed, the semiconductor wafer 100 is lowered together with the mounting portion 6a, and the sample table 6 is translated to move the inspection area. Then, the mounting portion 6a raises the semiconductor wafer 100 and brings the probe Pr into contact with the new inspection region for inspection. By performing the inspection while sequentially moving the inspection region in this way, the inspection of the entire semiconductor wafer 100 is executed.

Note that FIG. 1 is an explanatory diagram showing an example of the configuration of the semiconductor inspection device 1 simply and conceptually from the viewpoint of facilitating the understanding of the invention, and shows the number, density, arrangement, and inspection unit of the probe Pr. The shape, size ratio, etc. of each part of 4 and the sample table 6 are also described in a simplified and conceptualized manner. For example, from the viewpoint of facilitating the understanding of the arrangement of the probe Pr, the inspection area is emphasized more than that of a general semiconductor inspection apparatus, and the inspection area may be smaller or larger. ..

The connection plate 37 is provided with a plurality of electrodes (not shown) connected to the second pitch conversion block 36. Each electrode of the connection plate 37 is electrically connected to the inspection processing unit 8 by, for example, a cable or a connection terminal (not shown). The first pitch conversion block 35 and the second pitch conversion block 36 are pitch conversion members for converting the distance between the probe Prs into the electrode pitch of the connection plate 37.

As will be described later, the inspection jig 3 includes a plurality of probes Pr having one end Pa, the other end Pb, and a body Pc that are electrically connected to the inspection point of the inspection object, and one end Pa of each probe Pr. A support member 31 is provided to hold each probe Pr in a state of facing the semiconductor wafer 100. The inspection jig 3 is configured to be replaceable according to the semiconductor wafer 100 of the inspection target.

The first pitch conversion block 35 has an electrode 352, which will be described later, which is in contact with and conducts with the other end Pb of each probe Pr. The inspection unit 4 electrically connects each probe Pr of the inspection jig 3 to the inspection processing unit 8 via the connection plate 37, the second pitch conversion block 36, and the first pitch conversion block 35, or the inspection unit 4 thereof. It is equipped with a schematic connection circuit for switching connections.

The support member 31 includes a first support plate 32 arranged so as to face the semiconductor wafer 100, a second support plate 33 arranged so as to face the first pitch conversion block 35, the first support plate 32, and the support member 31. It includes a third support plate 34 arranged between the second support plates 33. The first support plate 32, the second support plate 33, and the third support plate 34 are connected by the connecting member 38 in a state of being arranged in parallel with each other at a predetermined distance.

As will be described later, the first support plate 32, the second support plate 33, and the third support plate 34 are formed with support holes including a plurality of insertion holes for supporting the probe Pr. The support holes of the first support plate 32 are arranged at positions corresponding to the inspection points set on the wiring pattern of the semiconductor wafer 100 to be inspected. As a result, one end Pa of the probe Pr can come into contact with the inspection point of the semiconductor wafer 100.

FIG. 2 is a side view showing an example of the probe Pr provided on the inspection jig, and FIG. 3 is a cross-sectional view taken along the line III-III of FIG. The probe Pr has one end Pa formed in a conical shape with a constricted tip, a body Pc connected to the one end Pa, and the other end Pb connected to the body Pc, and has conductivity. The entire shape of the metal material is formed into a substantially rod shape.

A protrusion Pd formed in the body portion Pc of the probe Pr so as to project in the radial direction of the probe Pr by forging the intermediate portion in the axial direction from the side or the like. The protrusion Pd has a locking surface Pd1 extending in the radial direction of the body portion Pc and a tip narrowing extending from the tip end portion of the locking surface Pd1 toward the peripheral surface of the body portion Pc located on the Pa side of one end of the probe Pr. It is formed in a triangle having an inclined surface Pd2 of a ball.

As will be described later, the other end Pb of the probe Pr is provided with a pair of left and right bulging portions for preventing the probe Pr from falling off, or a retaining portion Pj composed of a disk-shaped flange portion or the like. The cross-sectional shape of the probe Pr is not limited to a circular shape, and may be a square shape or an elliptical shape. Further, the tip of one end Pa is not limited to a conical shape with a narrowed tip, but may be spherical or a so-called crown shape provided with a plurality of protrusions, and may have various shapes. In the illustrated example, the tip of the other end Pb is formed on a flat surface, but the present invention is not limited to this, and may be conical, spherical, or crown-shaped.

The length of the probe Pr is, for example, 3.0 to 8.0 mm, and the diameter d of the probe Pr is, for example, 30 to 100 μm, or 50 to 65 μm. The length of one end Pa and the other end Pb of the probe Pr is, for example, 0.8 to 1.6 mm, or 0.3 to 0.6 mm.

The preferable value of the protrusion amount s of the protrusion Pd formed on the body portion Pc is 0.3 to 0.5 times the diameter d of the probe Pr. Further, a preferable value of the width dimension t of the protrusion Pd is 0.3 to 0.5 times the diameter d of the probe Pr.

FIG. 4 is a cross-sectional view showing the configuration of the inspection unit 4 provided in the semiconductor inspection device 1, and FIG. 5 is a cross-sectional view showing an example of the configuration of the inspection jig 3 provided in the inspection unit 4. Note that FIG. 4 shows the inspection jig 3 and the first pitch conversion block 35 in a separated state.

The first support plate 32 located below FIGS. 4 and 5 has a facing surface F1 which is arranged so as to face the semiconductor wafer 100. Further, the second support plate 33 located above FIGS. 4 and 5 has a back surface F2 that is in close contact with the lower surface of the first pitch conversion block 35.

A plurality of electrodes 352 are provided on the lower surface of the first pitch conversion block 35 arranged above the first support plate 32 at positions corresponding to the other end Pb of each probe Pr supported by the support member 31. Has been done. On the other hand, on the upper surface of the first pitch conversion block 35, a plurality of electrodes having a wider installation interval than the electrodes 352 on the lower surface are provided. The electrode 352 on the lower surface side of the first pitch conversion block 35 and the electrode on the upper surface side are connected by wiring 351.

A plurality of electrodes are provided on the lower surface of the second pitch conversion block 36 arranged above the first pitch conversion block 35 at positions corresponding to the electrodes arranged on the upper surface of the first pitch conversion block 35. There is. On the other hand, on the upper surface of the second pitch conversion block 36, a plurality of electrodes 362 are provided at positions corresponding to the electrodes arranged on the connection plate 37 described above. The electrode on the lower surface of the second pitch conversion block 36 and the electrode 362 on the upper surface are connected by wiring 361.

The inspection jig 3, the first pitch conversion block 35, and the second pitch conversion block 36 are assembled, and the second pitch conversion block 36 is attached to the lower surface of the connection plate 37 to form the inspection processing unit 8 and each. An inspection unit 4 that inputs / outputs a signal to / from the probe Pr is configured.

The first pitch conversion block 35 and the second pitch conversion block 36 can be configured by using, for example, a multilayer wiring board such as MLO (Multi-Layer Organic) or MLC (Multi-Layer Ceramic).

As shown in FIG. 5, the first support plate 32 of the inspection jig 3 is formed with a first support hole 321 composed of a plurality of insertion holes through which one end Pa of the probe Pr is inserted and supported. Each of the first support holes 321 is arranged at a position facing each inspection point 101 provided on the semiconductor wafer 100 in a state of supporting one end Pa of the probe Pr.

One end Pa of the probe Pr is installed with its tip protruding from the facing surface F1 of the first support plate 32 by a predetermined distance. Then, at the time of inspection described later, the tip of one end Pa and the inspection point 101 of the inspection object made of the semiconductor wafer 100 or the like are in contact with each other so as to be electrically connected to each other.

The surface of the second support plate 33 located above FIG. 5 is the back surface F2 facing the first pitch conversion block 35. The second support plate 33 is formed with a second support hole 331 formed of a plurality of insertion holes through which the other end Pb of the probe Pr is inserted and supported. The other end Pb of the probe Pr is inserted into the second support hole 331 and is supported.

Further, the retaining portion Pj of the probe Pr is arranged on the upper side of the back surface F2 of the second support plate 33. As a result, the other end Pb of the probe Pr is prevented from immersing in the second support hole 331 of the second support plate 33, and the apex of the other end Pb is the back surface of the second support plate 33. It is supported in a state of protruding from F2. Then, the apex of the other end Pb is pressed against the electrode 352 of the first pitch conversion block 35 so as to be electrically connected to each other.

Further, the third support plate 34 arranged between the first support plate 32 and the second support plate 33 is composed of a plurality of insertion holes in which the body portion Pc of the probe Pr is inserted and supported. A support hole 341 is formed. The diameter D of the third support hole 341 is set to a value slightly larger than the value d + s (see FIG. 3), which is the sum of the diameter d of the probe Pr and the protrusion amount s of the protrusion Pd.

The probe Pr is supported by the support member 31 with its protrusion Pd disposed below the third support hole 341. Then, in the initial stage of the inspection described later, the locking surface Pd1 of the protrusion Pd comes into contact with the contact portion 342 formed of the peripheral wall located below the third support hole 341, so that the protrusion Pd moves upward. Be regulated. Further, when a compressive load of a certain value or more is applied in the axial direction of the probe Pr, the protrusion Pd is configured to be separated from the contact portion 342 and immersed in the third support hole 341.

The first support plate 32, the second support plate 33, and the third support plate 34 have the corresponding first support hole 321 and the second support hole 331, and the third support hole 341 in the left-right direction of FIG. 5, that is, each of them. The probe Pr is arranged so as to be slightly displaced in the direction orthogonal to the axial direction. As a result, the probe Pr is installed along the inclined line K inclined at a predetermined angle θ with respect to the perpendicular line V extending in the vertical direction of the facing surface F1 of the first support plate 32 and the back surface F2 of the second support plate 33. It has become like.

The probe Pr may be inserted through the corresponding first support hole 321 and second support hole 331 and third support hole 341 in a state where they are positioned on the above-mentioned perpendicular line V. Then, the first support plate 32, the second support plate 33, and the third support plate 34 are relatively displaced in the left-right direction of FIG. 5, and the first support hole 321, the second support hole 331, and the third support are respectively displaced. The probe Pr may be installed along the inclination line K by locating the holes 341 with respect to each other.

In the embodiment shown in FIG. 5, one end Pa of each probe Pr supported by the first support plate 32 is supported in a state of being in contact with the inspection point 101 of the semiconductor wafer 100. Instead of this configuration, even if one end Pa of each probe Pr and the inspection point 101 of the semiconductor wafer 100 are separated from each other at a predetermined distance, each probe Pr may be supported by the support member 31. good.

FIG. 6 is a cross-sectional view showing the initial stage of the inspection using the probe Pr, FIG. 7 is a cross-sectional view showing the later stage of the inspection using the probe Pr, and FIG. 8 shows the compressive deformation amount λ of the probe Pr. It is a graph which shows the relationship with compressive stress σ.

In the initial stage of the inspection shown in FIG. 6, the semiconductor wafer 100 placed on the above-mentioned sample table is driven ascending, and the inspection point 101 is pressed against one end Pa of the probe Pr with a predetermined pressing force A. In response to this pushing pressure A, a compressive load A1 that compresses one end Pa of the probe Pr in the axial direction and a pushing load A2 that diagonally pushes one end Pa of the probe Pr act.

One end Pa of the probe Pr is elastically deformed by being compressed in the axial direction according to the compressive load A1. Further, in response to the push-up load A2, the peripheral surface Pa2 of one end Pa is pressed against the abutting portion 322 formed of the lower peripheral wall of the first support hole 321 and one end Pa of the probe Pr is pressed with the abutting portion 322 as a fulcrum. Is elastically deformed so as to be curved in an arc shape.

Then, in response to the compressive load B transmitted from one end Pa of the probe Pr to the installation portion of the protrusion Pd, the locking surface Pd1 formed of the upper surface of the protrusion Pd is pressed against the contact portion 342 of the third support hole 341. By doing so, the upward movement of the protrusion Pd is restricted. As a result, the one end side portion of the probe Pr, which is composed of the one end portion Pa of the probe Pr and the body portion Pc located below the protrusion Pd, is compressed in the axial direction according to the compressive load B. It is elastically deformed and a compressive stress σ is generated at one end side of the probe Pr.

Further, in the vertical intermediate portion of the probe Pr, a reaction force facing the compressive load B, that is, a reaction force B1 that presses the protrusion Pd downward to regulate its upward movement and a lateral movement of the protrusion Pd are applied. Regulating, the reaction force B2 that presses the protrusion Pd to the left in FIG. 6 acts. In response to this reaction force B2, the vertical intermediate portion of the probe Pr is pressed laterally, so that the inclination angle thereof is elastically deformed so as to be smaller than the initial inclination line K.

As the inspection point 101 of the semiconductor wafer 100 is gradually driven upward as the inspection progresses, the amount of compression deformation λ at one end side portion of the probe Pr gradually increases as shown in FIG. The compressive stress σ generated in the one end side portion of the probe Pr increases in proportion to the increase in the compressive deformation amount λ.

In the initial stage of the inspection, the compressive load B is concentrated on one end side of the probe Pr, so that the compressive stress σ generated in the probe Pr changes along the stress line σ1 at a steep angle, and the amount of compressive deformation λ. Slightly increases, the compressive stress σ generated in the one end side portion of the probe Pr rises sharply. Therefore, a sufficient pressure contact force between one end Pa of the probe Pr and the inspection point 101 of the semiconductor wafer 100 is sufficiently secured, and the oxide film on the electrode surface located at the inspection point 101 can be removed.

When the compressive load B acting on the one end side portion of the probe Pr further increases, the reaction force B2 that presses the protrusion Pd of the probe Pr sideways gradually increases in response to this, so that the axial direction of the probe Pr increases. It is deformed so that the inclination angle in the middle portion gradually decreases. For example, as shown in FIG. 7, when the axial intermediate portion of the probe Pr is deformed so as to be in a substantially vertical state, the protruding portion Pd of the probe Pr is separated from the abutting portion 342 of the third support plate 34. Then, it immerses itself in the third support hole 341. As a result, the engagement between the contact portion 342 of the third support plate 34 and the protrusion Pd of the probe Pr is released.

When the locked state of the protrusion Pd by the contact portion 342 of the third support plate 34 is released as described above, the other end side portion of the probe Pr located on the upper side of the third support plate 34, that is, the protrusion A compression load C equivalent to that of the one end side portion of the probe Pr is also transmitted to the body portion Pc located on the upper side of the portion Pd and the other end portion Pb of the probe Pr. As a result, the compressive load is dispersed over the entire length of the probe Pr, and a substantially uniform compressive stress σ is generated over the entire probe Pr.

As a result, as shown in FIG. 8, the rate of change of the compressive stress σ generated in the probe Pr at the time T1 when the contact portion 342 of the third support plate 34 and the protrusion Pd of the probe Pr are disengaged is determined. The inclination angle of the stress line σ2 shown is smaller than that in the initial stage of inspection. Therefore, in the latter stage of the inspection, the pressure contact force of the probe Pr with respect to the inspection point 101 of the semiconductor wafer 100 does not suddenly increase, and the occurrence of adverse effects caused by the excessively high pressure contact force is suppressed.

As shown in FIG. 7, the other end Pb of the probe Pr is pressed against the lower surface of the first pitch conversion block 35 in response to the compressive load C transmitted to the other end side portion of the probe Pr. A pressing force E that regulates the upward movement of the other end Pb of the probe Pr is applied to the apex of the other end Pb. In response to this pressing force E, the other end side portion of the probe Pr, that is, the body portion Pc located above the protrusion Pd and the other end portion Pb of the probe Pr are point-symmetrical with the one end side portion of the probe Pr. Since it is elastically deformed into the shape of the above and curved in an arc shape, the entire probe Pr including the one end side portion and the other end side portion of the probe Pr is deformed in a substantially S shape.

As described above, the substantially rod-shaped probe Pr having one end Pa connected to the inspection point 101 of the inspection object, the body Pc connected to the one end Pa, and the other end Pb connected to the body Pc. And, in the inspection jig 3 provided with the support member 31 supporting the probe Pr, and the inspection device provided with the inspection jig 3, the inspection jig 3 is detachably locked to the contact portion 342 of the support member 31. Since the probe Pr is provided with a locking portion composed of the protrusion Pd, the probe Pr is pressed against the electrode surface while suppressing the pressure contact force of the probe Pr with respect to the electrode provided at the inspection point 101 from becoming excessively high. It is possible to remove the oxide film on the electrode surface by securing sufficient force.

That is, in the above-described first embodiment, the first support plate 32 that supports one end Pa of the probe Pr and the second support plate 33 that supports the other end Pb of the probe Pr are arranged. A third support hole 341 is formed in the support plate 34 through which the body portion Pc of the probe Pr is inserted and supported. Then, the protrusion Pd having a part of the body portion Pc protruding in the radial direction of the probe Pr is positioned below the third support hole 341, and the diameter D of the third support hole 341 is referred to as the diameter d of the probe Pr. The value is set to be slightly larger than the value (d + s) obtained by adding the protrusion amount s of the protrusion Pd.

According to the above configuration, in the initial stage of the inspection in which the compressive load B acting on the one end side portion of the probe Pr is small, the protrusion Pd of the probe Pr is brought into the contact portion 342 formed by the lower peripheral wall of the third support hole 341. The locking portion made of the above abuts and is locked. Then, in the latter stage of the inspection in which the compressive load B of the probe Pr becomes equal to or higher than a predetermined value, the body portion Pc of the probe Pr is elastically deformed so that the protrusion Pd is immersed in the third support hole 341. The engagement between the portion Pd and the contact portion 342 can be released.

Therefore, in the initial stage of the inspection, the compressive load B is concentrated on the one end side portion of the probe Pr, which is composed of the one end portion Pa of the probe Pr and the portion located below the protrusion Pd of the body portion Pc. It acts, and mainly only one end side portion of the probe Pr is elastically deformed to generate a compressive deformation amount λ. Therefore, as shown in the stress line σ1 shown in FIG. 8, the compressive stress σ generated in the one end side portion of the probe Pr can be rapidly increased in proportion to the compressive deformation amount λ, and is provided at the inspection point 101 of the inspection object. The pressure contact force of the probe Pr with respect to the electrode surface can be sufficiently secured, and the oxide film on the electrode surface can be effectively removed.

Further, in the latter stage of the inspection, at the time T1 when the engagement between the protrusion Pd of the probe Pr and the contact portion 342 of the third support plate 34 is released, the compressive load acting on the probe Pr is applied to the total length of the probe Pr. It can be evenly dispersed over. Therefore, like the stress line σ2, the rate of change of the compressive stress σ that rises in response to the increase in the compressive deformation amount λ of the probe Pr is remarkably reduced, and the probe Pr is pressed against the inspection point 101 of the inspection object. It has the advantage of being able to effectively suppress excessive force buildup.

As described above, the probe Pr is provided on the contact portion provided on the support member 31 of the probe Pr, specifically, the contact portion 342 formed on the lower peripheral wall of the third support hole 341 formed in the third support plate 34. Instead of the above-described first embodiment in which the locking portion (protrusion portion Pd) is configured to be engagedably and detachably locked, a separate locking plate for engaging and engaging the locking portion of the probe Pr is provided. The structure may be provided on the support member 31.

However, as shown in the first embodiment, the protrusion Pd of the probe Pr can be engaged and disengaged by the lower peripheral wall of the third support hole 341 formed in the third support plate 34 that supports the body portion Pc of the probe Pr. When the contact portion 342 to be locked is configured, the function of supporting the body portion Pc of the probe Pr and the protrusion Pd of the probe Pr can be engaged and disengaged from the third support plate 34 constituting the support member 31. It can also have a locking function. Therefore, with a simple configuration, it is possible to appropriately remove the oxide film on the electrode surface provided at the inspection point 101 while stably supporting the probe Pr, and the pressure contact force of the probe Pr with respect to the electrode is excessively high. There is an advantage that it can be suppressed.

Note that, for example, the third support plate 34 is omitted, and the contact portion formed from the lower peripheral wall of the first support hole 321 formed in the first support plate 32 is formed with a protrusion provided at one end Pa of the probe Pr. The locking portion may be configured to be engaged and disengaged. However, in this configuration, the compressive stress σ of the probe Pr may increase sharply in the initial stage of the inspection, and the pressure contact force of the probe Pr with respect to the electrode surface of the inspection object may become excessively high.

Further, the contact portion 342 formed of the lower peripheral wall of the second support hole 331 formed in the second support plate 33 is engaged with a locking portion formed of a protrusion provided in the vicinity of the other end Pb of the probe Pr. It is also possible to lock it as possible. However, in this configuration, since the compressive stress σ of the probe Pr gradually increases at the initial stage of the inspection, it is not possible to sufficiently secure the pressure contact force of the probe Pr with respect to the electrode surface of the inspection object, and the electrode surface It is difficult to properly remove the oxide film.

Therefore, as shown in the first embodiment described above, a protrusion Pd that is disengageably locked to the contact portion 342 formed by the lower peripheral wall of the third support hole 341 is provided on the body portion Pc of the probe Pr. It is desirable to configure it. As a result, it is possible to sufficiently secure the pressure contact force of the probe Pr with respect to the electrode surface of the inspection target in the initial stage of the inspection, and in the latter stage of the inspection, the locking portion of the probe Pr and the support member 31 come into contact with each other. By disengaging the engagement with the portion 342 at an appropriate time, it is possible to effectively suppress the pressure contact force of the probe Pr with respect to the inspection object from becoming excessively high.

Further, when a locking portion is formed in which a part of the probe Pr is detachably locked to the above-mentioned abutting portion by a protruding portion Pd formed by projecting a part of the probe Pr in the radial direction, one end of the probe Pr is formed. In the initial stage of the inspection in which the compressive load B acting on the portion side portion is small, the protruding portion Pd of the probe Pr is locked to the contact portion, and the compressive load is concentratedly applied to the one end portion side portion of the probe Pr. Therefore, the oxide film on the electrode surface can be effectively removed. Further, in the latter stage of the inspection in which the compressive load B of the probe Pr becomes equal to or higher than a predetermined value, the probe Pr is elastically deformed to easily disengage the protrusion Pd from the contact portion, so that the inspection object is inspected. There is an advantage that it is possible to effectively suppress the excessively high pressure contact force of the probe with respect to the probe with a simple configuration.

The protrusion Pd formed on the probe Pr does not necessarily have to have the above-mentioned triangular shape, and can be changed to various shapes such as a semicircle, a trapezoid, or a rectangle.

However, as shown in the first embodiment described above, the protrusion Pd formed on the probe Pr is provided with a locking surface Pd1 extending in the radial direction of the body portion Pc and one end of the probe Pr from the tip of the locking surface Pd1. In the case of forming a triangular shape having an inclined surface Pd2 having a narrowed tip extending toward the portion side, when the support member 31 supports the probe Pr, the inclined surface along the wall surface of the third support hole 341 or the like. By sliding the Pd2, the work of moving the protrusion Pd below the third support plate 34 can be easily performed.

Further, in the initial stage of the inspection, as shown in FIG. 6, the locking surface Pd1 of the protrusion Pd is brought into contact with the contact portion 342 formed of the lower peripheral wall of the third support hole 341 to be locked. A compressive load can be concentrated on the one end side portion of the probe Pr. Moreover, after the inspection is completed, if the semiconductor wafer 100 is lowered from the ascending position shown in FIG. 7 to release the pressing force A that presses the one end Pa of the probe Pr upward, the force A corresponding to the restoring force of the probe Pr is released. (3) By sliding the inclined surface Pd2 along the wall surface of the support hole 341, there is an advantage that the protrusion Pd can be smoothly moved below the third support plate 34.
(Second Embodiment)

FIG. 9 is a cross-sectional view showing the configuration of the inspection jig 3a according to the second embodiment of the present invention, and FIG. 10 is a cross-sectional view showing a modified example 3b of the inspection jig.

The probe Pra provided in the inspection jig 3a shown in FIG. 9 has a large-diameter portion Pe having a large radial dimension and a small-diameter portion Pf having a small radial dimension located above the large-diameter portion Pe. The large-diameter portion Pe of the probe Pra can be easily formed, for example, by coating the axial intermediate portion of the probe Pra with an acrylic resin or Teflon (registered trademark), or by electrodepositing a ring-shaped member by Ni electroforming. Will be done.

The outer diameter da of the large diameter portion Pe is set to a value slightly smaller than the diameter D of the third support hole 341, and is supported in a state of being located below the third support hole 341. As a result, the stepped portion Pe1 formed between the large-diameter portion Pe and the small-diameter portion Pf abuts on, for example, the abutting portion 342 formed of the lower peripheral wall of the third support hole 341, and is engaged and disengaged. It is supposed to be done.

That is, in the initial stage of the inspection using the probe Pra, the step portion Pe1 abuts on the lower peripheral wall (contact portion 342) of the third support hole 341, and its upward movement is restricted. Then, when the compressive load B acting in the axial direction of the probe Pra becomes a certain value or more, the probe Pra is elastically deformed according to the reaction force B2 acting on the step portion Pe1 of the probe Pra, and the probe Pra is elastically deformed from the step portion Pe1. The locking portion is immersed in the third support hole 341. As a result, the engagement between the locking portion (step portion Pe1) of the probe Pra and the contact portion 342 of the support member 31 can be released.

Therefore, in the initial stage of the inspection using the probe Pra, the oxide film on the electrode surface located at the inspection point 101 can be appropriately removed by sufficiently securing the pressure contact force of the probe Pra with respect to the inspection point 101. be. Moreover, in the latter stage of the inspection using the probe Pra, it is possible to prevent the pressure contact force of the probe Pra from becoming excessively high with respect to the inspection point 101 of the inspection object made of the semiconductor wafer 100 or the like.

On the other hand, in the modified example 3b of the inspection jig shown in FIG. 10, from the large-diameter portion Pfa formed continuously from the axial intermediate portion of the body portion Pc to the one end portion Pa and the axial intermediate portion of the body portion Pc. A probe Prb having a small diameter portion Pfb formed continuously over the other end portion Pb is arranged. For example, a rod-shaped body having a predetermined outer diameter is machined, or a rod-shaped body constituting the small-diameter portion Pfb is inserted into a tubular body constituting the large-diameter portion Pfa. A probe Prb having a portion Pfa and a small diameter portion Pfb can be easily formed.

Then, since the outer diameter db of the large diameter portion Pfa is set to a value slightly smaller than the diameter D of the third support hole 341, the large diameter portion Pfa and the small diameter portion Pfb are set at the initial stage of the inspection using the probe Prb. The stepped portion Pe2 formed between the two and the stepped portion Pe2 abuts on the lower peripheral wall (contact portion 342) of the third support hole 341, and the upward movement of the stepped portion Pe2 is restricted. Further, when the compressive load B acting in the axial direction of the probe Prb becomes a certain value or more, the probe Pr is elastically deformed according to the reaction force B2 acting on the stepped portion Pe2 of the probe Prb, thereby causing the stepped portion Pe2. Is immersed in the third support hole 341. As a result, the engagement between the locking portion (step portion Pe2) of the probe Prc and the contact portion 342 of the support member 31 can be released.

Therefore, in the initial stage of the inspection using the probe Prb, by sufficiently securing the pressure contact force of the probe Prb with respect to the inspection point 101, it is possible to appropriately remove the oxide film on the electrode surface located at the inspection point 101. be. Moreover, it is possible to effectively prevent the pressure contact force of the probe Prb from becoming excessively high with respect to the inspection point 101 of the inspection object made of the semiconductor wafer 100 or the like in the latter stage of the inspection using the probe Prb.
(Third Embodiment)

FIG. 11 is a cross-sectional view showing the configuration of the inspection jig 3c according to the third embodiment of the present invention, and FIG. 12 is a cross-sectional view showing the latter stage of the inspection in the third embodiment of the inspection jig 3c.

The probe Pr provided on the inspection jig 3c has a recessed portion Pg in which a part thereof in the axial direction is recessed in the radial direction. The third support hole 341 formed in the third support plate 34 has a diameter D slightly larger than the diameter d of the probe Prc. Then, as shown in FIG. 11, the axial intermediate portion of the probe Prc is supported by the third support plate 34 in a state where the peripheral wall portion of the third support hole 341 is fitted in the recessed portion Pg of the probe Prc. It is configured as follows.

According to the above configuration, in the initial stage of the inspection in which the compressive load B acting in the axial direction of the probe Pr is small, the stepped portion Pg1 formed between the recessed portion Pg and the peripheral surface of the probe Prc, that is, FIG. The side wall of the recessed portion Pg located on the lower side abuts on the contact portion 342 formed of the lower peripheral wall of the third support hole 341, and the upward movement of the recessed portion Pg is restricted. Then, when the compressive load B acting in the axial direction of the probe Pr becomes a certain value or more, the probe Pr is elastically deformed according to the reaction force B2 acting on the step portion Pg1 of the probe Pr, thereby causing the probe Prc to be elastically deformed. The locking portion made of the step portion Pg1 is separated from the contact portion 342. As a result, the engagement between the locking portion (step portion Pg1) of the probe Prc and the contact portion 342 can be released.

Therefore, by sufficiently securing the pressure contact force of the probe Prc with respect to the inspection point 101 at the initial stage of the inspection using the probe Prc, it is possible to appropriately remove the oxide film on the electrode surface located at the inspection point 101. be. Further, in the latter stage of the inspection using the probe Pr, it is possible to effectively prevent the pressure contact force of the probe Prc from becoming excessively high with respect to the inspection point 101 of the inspection object made of the semiconductor wafer 100 or the like.
(Fourth Embodiment)

FIG. 13 is a cross-sectional view showing the configuration of the inspection jig 3d according to the third embodiment of the present invention, and FIG. 14 is a cross-sectional view showing the latter stage of the inspection in the third embodiment of the inspection jig 3d.

The probe Prd provided on the inspection jig 3d has a bent portion Ph in which a part thereof in the axial direction is bent in the radial direction. The third support hole 341 formed in the third support plate 34 has a diameter D slightly larger than the width dimension W of the bent portion Ph. The upper surface Ph1 of the locking portion made of the bent portion Ph is configured to be engagedably and detachably locked to, for example, the abutting portion 342 formed of the lower peripheral wall of the third support hole 341.

In the initial stage of inspection using the probe Prd, as shown in FIG. 13, the upper surface Ph1 of the bent portion Ph abuts on the lower peripheral wall (contact portion 342) of the third support hole 341, and its upward movement is restricted. Will be done. Further, during an inspection using the probe Prd, when a compressive load B of a certain value or more acts in the axial direction of the probe Prd, as shown in FIG. 14, the probe Prd is elastically deformed to deform the bent portion Ph. It can be immersed in the third support hole 341. As a result, the locking portion made of the bent portion Ph can be separated from the contact portion 342, and the engagement between the locking portion of the probe Prd and the contact portion 342 of the support member 31 can be released.

Therefore, in the initial stage of the inspection using the probe Prd, it is possible to appropriately remove the oxide film on the electrode surface located at the inspection point 101 by sufficiently securing the pressure contact force of the probe Prc with respect to the inspection point 101. be. Further, in the latter stage of the inspection using the probe Prd, it is possible to effectively prevent the pressure contact force of the probe Prd from becoming excessively high with respect to the inspection point 101 of the inspection object made of the semiconductor wafer 100 or the like.

That is, the inspection jig according to the present invention is a substantially rod-shaped probe having one end portion conductively connected to the inspection point of the inspection object, a body portion connected to the one end portion, and the other end portion connected to the body portion. And a support member for supporting the probe, the probe has a locking portion that is engageably and detachably locked to an abutting portion provided on the supporting member, and the locking portion is said. During inspection using a probe, it is configured to separate from the contact portion when a compressive load of a certain value or more is applied in the axial direction of the probe.

According to this configuration, in the initial stage of the inspection in which the compressive load acting on the one end side portion of the probe is small, the locking portion of the probe is locked to the abutting portion of the support member and is attached to the one end side portion of the probe. The compressive load acts intensively. Therefore, the pressure contact force of the probe with respect to the electrode surface provided at the inspection point of the inspection object is sufficiently secured, and the oxide film on the electrode surface can be appropriately removed. Further, in the latter stage of the inspection when the compressive load of the probe becomes equal to or higher than a predetermined value, the probe is elastically deformed to release the engagement between the locking portion and the contact portion of the support member, thereby acting on the probe. The compressive load can be evenly distributed over the entire length of the probe. Therefore, there is an advantage that it is possible to effectively suppress the pressure contact force of the probe with respect to the inspection object from becoming excessively high.

Further, the support member has a support plate formed with a support hole through which the probe is inserted and supported, and the locking portion abuts on the contact portion formed of a peripheral wall of the support hole. It is preferable that the engagement with the contact portion is released by being locked and immersed in the support hole.

According to this configuration, the support plate constituting the support member can have both a function of supporting the probe and a function of engaging and disengaging the locking portion of the probe. Therefore, with a simple configuration, it is possible to properly remove the oxide film on the electrode surface provided at the inspection point while stably supporting the probe, and the pressure contact force of the probe with respect to the electrode becomes excessively high. It has the advantage of being able to be suppressed.

Further, the support member includes a first support plate that supports one end of the probe, a second support plate that supports the other end of the probe, and a third support plate that supports the body of the probe. The contact portion preferably has a peripheral wall of a third support hole formed in the third support plate.

According to this configuration, in the initial stage of the inspection using the probe, the locking portion of the probe is detachably locked to the abutting portion provided on the third support plate, thereby appropriately locking the body portion of the probe. It is possible to generate a compressive stress of the probe to sufficiently secure the pressure contact force of the probe with respect to the electrode surface of the inspection object. Moreover, in the latter stage of the inspection, it is effective that the pressure contact force of the probe with respect to the inspection object becomes excessively high by disengaging the engaging portion of the probe and the contact portion of the support member at an appropriate time. There is an advantage that it can be suppressed.

Further, it is preferable that the locking portion is composed of a protrusion formed by projecting a part of the probe in the radial direction of the probe.

According to this configuration, in the initial stage of inspection in which the compressive load acting on one end side of the probe is small, the protrusion of the probe is locked to the contact portion and the compressive load is concentrated on the one end side of the probe. The oxide film on the surface of the electrode can be appropriately removed by the action. Further, in the latter stage of the inspection when the compressive load of the probe becomes equal to or higher than a predetermined value, the probe is elastically deformed to easily disengage the engaging portion and the contact portion, so that the probe with respect to the inspection object is subjected to the inspection. It is possible to effectively suppress the excessively high pressure contact force with a simple configuration.

Further, the protrusion is formed in a triangular shape having a locking surface extending in the radial direction of the probe and an inclined surface having a narrowed tip extending from the tip of the locking surface toward one end side of the probe. , It is preferable that the locking surface is engaged and disengaged by contacting the contact portion.

According to this configuration, when the support member supports the probe, the work of moving the protrusion of the probe below the support plate can be easily performed by sliding an inclined surface along the wall surface of the support hole or the like. be able to. Further, after the inspection is completed, the protrusion of the probe can be smoothly moved below the support plate by sliding the inclined surface along the wall surface of the support hole according to the restoring force of the probe. There are advantages.

Further, the probe has a large diameter portion having a large radial dimension and a small diameter portion having a small radial dimension, and the locking portion is a step portion formed between the large diameter portion and the small diameter portion. It may be composed of.

According to this configuration, in the initial stage of the inspection using the probe, the step portion can be brought into contact with the contact portion of the support member to regulate its upward movement and the like. Then, when the compressive load acting in the axial direction of the probe becomes a certain value or more, the probe is elastically deformed so that the step portion is immersed in the support hole, so that the contact portion between the step portion and the support member is contacted. The engagement with can be disengaged.

Further, it is preferable that the large-diameter portion is formed of a bulging portion formed in a part of the body portion.

According to this configuration, for example, the axial intermediate portion of the probe is coated with an acrylic resin or Teflon (registered trademark), or a ring-shaped member is electrodeposited by Ni electroforming to have the large diameter portion. The probe can be easily formed.

Further, the large-diameter portion is continuously formed from the axial intermediate portion of the body portion to the one end portion, and the small-diameter portion is continuously formed from the axial intermediate portion of the body portion to the other end portion. It may be the one that has been done.

According to this configuration, the large-diameter portion and the small-diameter portion having appropriate rigidity are formed by cutting the rod-shaped body or inserting the rod-shaped body constituting the small-diameter portion into the tubular body constituting the large-diameter portion. A probe having and can be easily formed.

Further, the probe has a recessed portion in which a part in the axial direction is recessed in the radial direction, and the locking portion is a stepped portion formed between the recessed portion and the peripheral surface of the probe. It may be composed of.

According to this configuration, in the initial stage of inspection in which the compressive load acting in the axial direction of the probe is small, the step portion formed between the recessed portion and the peripheral surface of the probe is in contact with the lower peripheral wall of the support hole. The upward movement of the locking portion including the stepped portion is restricted by abutting on the portion or the like. Then, when the compressive load acting in the axial direction of the probe becomes a certain value or more, the probe is elastically deformed to separate the locking portion of the probe, which is the step portion of the probe, from the contact portion. The engagement between the locking portion of the probe and the abutting portion of the support member can be released.

Further, the probe may have a bent portion in which a part in the axial direction is bent in the radial direction, and the locking portion may be formed by the bent portion.

According to this configuration, in the initial stage of the inspection using the probe, the locking portion made of the upper surface of the bent portion is brought into contact with the abutting portion made of the lower peripheral wall of the support hole, thereby moving upward. Etc. can be regulated. Further, when a compressive load of a certain value or more is applied in the axial direction of the probe, the bent portion of the probe is immersed in the support hole by elastically deforming the probe, so that the bent portion is separated from the contact portion. Then, the engagement between the bent portion of the probe and the abutting portion of the support member can be released.

Further, the inspection device according to the present invention is provided with the above-mentioned inspection jig, and inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.

According to this configuration, in the initial stage of inspection by the inspection device, the oxide film on the electrode surface is properly removed by sufficiently ensuring the pressure contact force of the probe with respect to the electrode surface provided at the inspection point of the inspection object. can do. Further, in the latter stage of the inspection when the compressive load of the probe exceeds a predetermined value, the compressive load acting on the probe is evenly distributed over the entire length of the probe, so that the pressure contact force of the probe with respect to the inspection object becomes excessive. There is an advantage that it can be effectively suppressed from becoming high.

The inspection jig and the inspection device having such a configuration can remove the oxide film on the electrode surface while suppressing the pressure contact force of the probe with respect to the electrode of the inspection object from becoming excessively high.

This application is based on Japanese Patent Application No. 2018-133737 filed on July 31, 2018, the contents of which are included in the present application. In addition, the specific embodiment or example made in the section of the mode for carrying out the invention merely clarifies the technical content of the present invention, and the present invention is described in such a specific example. It should not be construed in a narrow sense.

1 Semiconductor inspection equipment (inspection equipment)
3 Inspection jig 4 Inspection unit 6 Sample stand 6a Mounting unit 8 Inspection processing unit 31 Support member 32 First support plate 33 Second support plate 34 Third support plate 35 First pitch conversion block 36 Second pitch conversion block 37 Connection Plate 38 Connecting member 100 Semiconductor wafer (object to be inspected)
101 Inspection point 321 First support hole 331 Second support hole 341 Third support hole 342 Contact part 351 Wiring 352 Electrode 361 Wiring 362 Electrode Pa One end Pb Other end Pc Body part Pd Protrusion part (locking part)
Pd1 locking surface Pd2 inclined surface Pe large diameter part Pe1 step part (locking part)
Pe2 step part (locking part)
Peb Large diameter part Pf Small diameter part Pfb Small diameter part Pg Recessed part Pg1 Step part (locking part)
Ph bending part (locking part)

Claims (11)

A substantially rod-shaped probe having one end portion conductively connected to the inspection point of the inspection object, a body portion connected to the one end portion, and the other end portion connected to the body portion.
A support member for supporting the probe is provided.
The probe has a locking portion that is detachably locked to a contact portion provided on the support member.
The locking portion is an inspection jig configured to be separated from the contact portion when a compressive load of a certain value or more is applied in the axial direction of the probe during inspection using the probe. The support member has a support plate formed with a support hole through which the probe is inserted and supported.
The locking portion is locked by contacting the contact portion formed of the peripheral wall of the support hole, and is immersed in the support hole so that the engagement with the contact portion is released. The inspection jig according to claim 1, which is configured. The support member has a first support plate that supports one end of the probe, a second support plate that supports the other end of the probe, and a third support plate that supports the body of the probe. ,
The inspection jig according to claim 2, wherein the contact portion is formed of a peripheral wall of a third support hole formed in the third support plate. The inspection jig according to claim 2 or 3, wherein the locking portion is composed of a protrusion formed by projecting a part of the probe in the radial direction of the probe. The protrusion is formed in a triangular shape having a locking surface extending in the radial direction of the probe and an inclined surface having a narrowed tip extending from the tip of the locking surface toward one end of the probe.
The inspection jig according to claim 4, wherein the locking surface is engaged and disengaged by contacting the contact portion. The probe has a large diameter portion having a large radial dimension and a small diameter portion having a small radial dimension.
The inspection jig according to claim 2 or 3, wherein the locking portion is composed of a step portion formed between the large diameter portion and the small diameter portion. The inspection jig according to claim 6, wherein the large-diameter portion is composed of a bulging portion formed in a part of the body portion. The large-diameter portion is continuously formed from the axial middle portion of the body portion to the one end portion.
The inspection jig according to claim 6, wherein the small diameter portion is continuously formed from the axial intermediate portion of the body portion to the other end portion. The probe has a recessed portion in which a part in the axial direction is recessed in the radial direction.
The inspection jig according to claim 2 or 3, wherein the locking portion is composed of a step portion formed between the recessed portion and the peripheral surface of the probe. The probe has a bent portion in which a part in the axial direction is bent in the radial direction.
The inspection jig according to claim 2 or 3, wherein the locking portion comprises the bent portion. An inspection device comprising the inspection jig according to any one of claims 1 to 10 and inspecting the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.

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