WO2020012799A1

WO2020012799A1 - Inspection tool and inspection device

Info

Publication number: WO2020012799A1
Application number: PCT/JP2019/020940
Authority: WO
Inventors: 加藤　穣
Original assignee: 日本電産リード株式会社
Priority date: 2018-07-13
Filing date: 2019-05-27
Publication date: 2020-01-16
Also published as: TW202006365A; JPWO2020012799A1; JP7371625B2; TWI826453B; CN112424615A

Abstract

The present invention comprises a roughly rod-shaped probe Pr having one end part Pa conductively connected to an inspection point 101 of an object (100) of inspection, a body part Pc that is continuous with the one end part Pa, and an other end part Pb that is continuous with the body part Pc, and a support member 31 for supporting the probe Pr. The probe has a locking part that is removably locked to a contact part provided on the support member. The locking part separates from the contact part when a compressive load greater than or equal to a fixed value acts in the axial direction of the probe during inspection using the probe.

Description

Inspection jig and inspection device

{Circle over (1)} The present invention relates to an inspection jig and an inspection apparatus used for inspecting an inspection object.

Conventionally, a plurality of needle-shaped probes are brought into contact with an inspection point of an inspection object such as a semiconductor chip or a substrate on which circuits, wirings, etc. are formed, and an electric signal is applied between the probes, or between the probes. Inspection of an inspection target is performed by measuring a voltage or the like. When a plurality of probes are brought into contact with the inspection point in this manner, the probes may bend and come into contact with adjacent probes.

Therefore, a needle tip, a needle intermediate part following the needle tip, and a needle rear part following the needle intermediate part, the needle tip, the needle intermediate part, and the needle rear part each have a plate-shaped region, An inspection jig having a probe in which the width direction of the plate-like region at the tip and the rear of the needle is set at an angle of substantially 90 degrees with respect to the width direction of the plate-like region at the middle portion of the needle when viewed from the needle tip side or the needle rear end side. A tool (probe unit) is known (for example, see Patent Document 1).

Patent Document 1 discloses that the direction of each probe is defined by inserting a plate-shaped region of a needle tip portion and a needle rear portion into a slit, a bending direction of a probe is controlled by a plate-shaped region of a needle middle portion, The probe can be arranged at a narrow pitch by elastically deforming adjacent probes in the same direction when they occur, and the needle tip slides along the electrode surface by elastically deforming the plate-shaped area, thereby making the inspection object Describes that an oxide film formed on the electrode surface can be removed.

JP-A-2001-74779

However, even when the probe tip of the probe is slid along the electrode surface as in the inspection jig described in Patent Document 1, the pressure contact force of the probe on the electrode surface of the inspection object is insufficient. In addition, it is difficult to properly remove the oxide film on the electrode surface. For this reason, it is necessary to ensure a sufficient pressing force of the probe against the electrode. However, if the pressing force is excessively high, there is a possibility that the inspection object may be adversely affected.

An object of the present invention is to provide an inspection jig and an inspection apparatus capable of appropriately removing an oxide film on an electrode surface while suppressing an excessive increase in pressure of a probe against an electrode of an inspection object. It is to be.

An inspection jig according to the present invention includes an end portion electrically connected to an inspection point of an inspection target, a body portion connected to the one end portion, and a substantially rod-shaped probe having the other end portion connected to the body portion, A support member that supports the probe, the probe has a locking portion that is removably locked to a contact portion provided on the support member, and the locking portion includes the probe. At the time of the used inspection, when a compressive load of a predetermined value or more is applied in the axial direction of the probe, the probe is detached from the contact portion.

The inspection apparatus according to the present invention includes the above-described inspection jig, and inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.

FIG. 1 is a conceptual diagram schematically showing a configuration of a semiconductor inspection device including an inspection jig according to a first embodiment of the present invention. It is a side view which shows an example of the probe provided in the inspection jig. FIG. 3 is a sectional view taken along line III-III of FIG. 2. FIG. 3 is a cross-sectional view illustrating a configuration of an inspection unit provided in the inspection device. FIG. 3 is a cross-sectional view illustrating a configuration of an inspection jig provided in the inspection unit. It is sectional drawing which shows the initial stage of the test | inspection using a probe. It is sectional drawing which shows the latter stage of the test | inspection using a probe. 5 is a graph showing the relationship between the amount of compressive deformation of the probe and the compressive stress. It is a sectional view showing the composition of the inspection jig concerning a second embodiment of the present invention. It is a sectional view showing a modification of an inspection jig concerning a second embodiment of the present invention. It is a sectional view showing the composition of the inspection jig concerning a third embodiment of the present invention. It is sectional drawing which shows the latter stage of an inspection in 3rd embodiment. It is a sectional view showing the composition of the inspection jig concerning a fourth embodiment of the present invention. It is sectional drawing which shows the latter stage of an inspection in 4th Embodiment of an inspection jig.

Hereinafter, embodiments according to the present invention will be described with reference to the drawings. In each of the drawings, the same reference numerals denote the same components, and a description thereof will be omitted.
(First embodiment)

FIG. 1 is a conceptual diagram schematically showing a configuration of a semiconductor inspection apparatus 1 provided with an inspection jig 3 according to a first embodiment of the present invention. A semiconductor inspection apparatus 1 shown in FIG. 1 corresponds to an example of an inspection apparatus according to the present invention, and inspects a circuit formed on a semiconductor wafer 100 which is an example of an inspection object.

回路 In the semiconductor wafer 100, a circuit corresponding to a plurality of semiconductor chips is formed on a semiconductor substrate such as silicon. The inspection object may be an electronic component such as a semiconductor chip, a CSP (Chip Size Package), a semiconductor element (IC: Integrated Circuit), or any other electronic inspection target. .

The inspection device is not limited to the semiconductor inspection device 1, but may be, for example, a substrate inspection device for inspecting a substrate. The substrate to be inspected may be, for example, a printed wiring board, a glass epoxy board, a flexible board, a ceramic multilayer wiring board, a package board for a semiconductor package, an interposer board, a board such as a film carrier, a liquid crystal display, an EL. It may be an electrode plate for a display such as an (Electro-Luminescence) display or a touch panel display, an electrode plate for a touch panel or the like, or may be various substrates.

(1) The semiconductor inspection apparatus 1 shown in FIG. 1 includes an inspection unit 4, a sample table 6, and an inspection processing unit 8. On the upper surface of the sample table 6, there is provided a mounting portion 6a on which the semiconductor wafer 100 is mounted and fixed at a predetermined position.

The mounting portion 6a is supported, for example, so as to be able to move up and down, and is configured to raise the semiconductor wafer 100 accommodated in the sample table 6 to the inspection position and store the inspected semiconductor wafer 100 in the sample table 6. ing. Further, the mounting section 6a has a rotation mechanism that can turn the orientation flat in a predetermined direction, for example, by rotating the semiconductor wafer 100. In addition, the semiconductor inspection apparatus 1 includes an unillustrated robot arm or the like capable of mounting the semiconductor wafer 100 on the mounting portion 6a and carrying out the inspected semiconductor wafer 100 from the mounting portion 6a. It has a transport mechanism.

The inspection unit 4 includes the inspection jig 3, the first pitch conversion block 35, the second pitch conversion block 36, and the connection plate 37. The inspection jig 3 is a jig for performing inspection by bringing a plurality of probes Pr into contact with the semiconductor wafer 100, and is configured as, for example, a so-called probe card.

A plurality of chips are formed on the semiconductor wafer 100. Each chip is provided with inspection points such as electrodes, wiring patterns, solder bumps, connection terminals, and the like. The inspection jig 3 includes a plurality of chips provided in a partial area (for example, an inspection area indicated by hatching in FIG. 1) of a plurality of chips formed on the semiconductor wafer 100 so as to correspond to respective inspection points. Of the probe Pr.

(4) When the probe Pr is brought into contact with each inspection point in the inspection area and the inspection in the inspection area is completed, the semiconductor wafer 100 is lowered together with the mounting portion 6a, and the sample table 6 is moved in parallel to move the inspection area. Then, the mounting section 6a raises the semiconductor wafer 100 and makes the probe Pr contact a new inspection area to perform the inspection. As described above, the inspection of the entire semiconductor wafer 100 is performed by performing the inspection while sequentially moving the inspection region.

FIG. 1 is an explanatory diagram schematically and conceptually showing an example of the configuration of the semiconductor inspection apparatus 1 from the viewpoint of facilitating the understanding of the present invention. The shape and size ratio of each part of the sample 4 and the sample table 6 are also simplified and conceptualized. For example, from the viewpoint of facilitating understanding of the arrangement of the probe Pr, the inspection area is emphasized more than a general semiconductor inspection apparatus, and the inspection area may be smaller or larger. .

The connection plate 37 is provided with a plurality of electrodes (not shown) connected to the second pitch conversion block 36. Each electrode of the connection plate 37 is electrically connected to the inspection processing unit 8 by, for example, a cable or a connection terminal (not shown). The first pitch conversion block 35 and the second pitch conversion block 36 are pitch conversion members for converting an interval between the probes Pr into an electrode pitch of the connection plate 37.

The inspection jig 3 includes a plurality of probes Pr having one end Pa, the other end Pb, and a body Pc which are conductively connected to an inspection point of an inspection target, as will be described later, and one end Pa of each probe Pr. And a support member 31 for holding each probe Pr with the substrate facing the semiconductor wafer 100. The inspection jig 3 is configured to be replaceable according to the semiconductor wafer 100 to be inspected.

The first pitch conversion block 35 has an electrode 352 described later that is in contact with and conducts with the other end Pb of each probe Pr. The inspection unit 4 electrically connects each probe Pr of the inspection jig 3 to the inspection processing unit 8 via the connection plate 37, the second pitch conversion block 36, and the first pitch conversion block 35, An unillustrated connection circuit for switching connections is provided.

The support member 31 includes a first support plate 32 disposed to face the semiconductor wafer 100, a second support plate 33 disposed to face the first pitch conversion block 35, and a first support plate 32. And a third support plate 34 disposed between the second support plates 33. The first support plate 32, the second support plate 33, and the third support plate 34 are connected by a connection member 38 in a state where they are disposed parallel to each other at a predetermined distance.

(4) In the first support plate 32, the second support plate 33, and the third support plate 34, as described later, support holes including a plurality of insertion holes for supporting the probe Pr are formed. The support holes of the first support plate 32 are arranged at positions corresponding to inspection points set on the wiring pattern of the semiconductor wafer 100 to be inspected. Thereby, one end Pa of the probe Pr can be brought into contact with the inspection point of the semiconductor wafer 100.

FIG. 2 is a side view showing an example of the probe Pr provided on the inspection jig, and FIG. 3 is a sectional view taken along line III-III of FIG. The probe Pr has one end Pa having a conically tapered tip, a body Pc connected to the one end Pa, and another end Pb connected to the body Pc. The overall shape of the metal material is substantially rod-like.

胴 The body Pc of the probe Pr is provided with a protrusion Pd formed by protruding in the radial direction of the probe Pr by, for example, forging a middle portion in the axial direction from the side. The protrusion Pd has a locking surface Pd1 extending in the radial direction of the body Pc, and a constriction extending from the tip of the locking surface Pd1 toward the peripheral surface of the body Pc located on one end Pa side of the probe Pr. It is formed in a triangular shape having a ball slope Pd2.

(4) The other end portion Pb of the probe Pr is provided with a pair of left and right bulging portions for preventing the probe Pr from falling off, or a retaining portion Pj including a disk-shaped flange portion, as described later. The cross-sectional shape of the probe Pr is not limited to a circle, but may be a square or an ellipse. Further, the tip of the one end Pa is not limited to a conical shape with a taper, and may be a spherical shape or a so-called crown shape provided with a plurality of projections, and may have various shapes. In the illustrated example, the tip of the other end portion Pb is formed in a flat surface, but is not limited to this, and may be a conical shape, a spherical shape, or a crown shape.

The length of the probe Pr is, for example, 3.0 to 8.0 mm, and the diameter d of the probe Pr is, for example, 30 to 100 μm, or 50 to 65 μm. The length of one end Pa and the other end Pb of the probe Pr is, for example, 0.8 to 1.6 mm, or 0.3 to 0.6 mm.

好ましい A preferable value of the protrusion amount s of the protrusion Pd formed on the body Pc is 0.3 to 0.5 times the diameter d of the probe Pr. Further, a preferable value of the width dimension t of the protrusion Pd is 0.3 to 0.5 times the diameter d of the probe Pr.

FIG. 4 is a cross-sectional view illustrating the configuration of the inspection unit 4 provided in the semiconductor inspection apparatus 1, and FIG. 5 is a cross-sectional view illustrating an example of the configuration of the inspection jig 3 provided in the inspection unit 4. FIG. 4 shows the inspection jig 3 and the first pitch conversion block 35 in a separated state.

第一 The first support plate 32 located below FIGS. 4 and 5 has an opposing surface F <b> 1 arranged to oppose the semiconductor wafer 100. 4 and 5 has a back surface F2 that is in close contact with the lower surface of the first pitch conversion block 35.

On the lower surface of the first pitch conversion block 35 disposed above the first support plate 32, a plurality of electrodes 352 are provided at positions corresponding to the other ends Pb of the probes Pr supported by the support member 31. Have been. On the other hand, the upper surface of the first pitch conversion block 35 is provided with a plurality of electrodes whose installation intervals are wider than the electrodes 352 on the lower surface. The electrode 352 on the lower surface side of the first pitch conversion block 35 and the electrode on the upper surface side are connected by a wiring 351.

On the lower surface of the second pitch conversion block 36 disposed above the first pitch conversion block 35, a plurality of electrodes are provided at positions corresponding to the electrodes disposed on the upper surface of the first pitch conversion block 35. I have. On the other hand, a plurality of electrodes 362 are provided on the upper surface of the second pitch conversion block 36 at positions corresponding to the electrodes arranged on the connection plate 37 described above. The electrode on the lower surface and the electrode 362 on the upper surface of the second pitch conversion block 36 are connected by a wiring 361.

The inspection jig 3, the first pitch conversion block 35, and the second pitch conversion block 36 are assembled, and the second pitch conversion block 36 is attached to the lower surface of the connection plate 37. An inspection unit 4 for inputting and outputting signals to and from the probe Pr is configured.

The first pitch conversion block 35 and the second pitch conversion block 36 can be configured using a multilayer wiring board such as MLO (Multi-Layer @ Organic) or MLC (Multi-Layer @ Ceramic).

(5) The first support plate 32 of the inspection jig 3 is formed with a first support hole 321 including a plurality of insertion holes through which the one end Pa of the probe Pr is inserted and supported, as shown in FIG. Each of the first support holes 321 is arranged at a position facing each inspection point 101 provided on the semiconductor wafer 100 in a state where one end Pa of the probe Pr is supported.

一端 One end Pa of the probe Pr is installed with its tip protruding a predetermined distance from the facing surface F1 of the first support plate 32. Then, at the time of inspection to be described later, the tip of the one end Pa and the inspection point 101 of the inspection object made of the semiconductor wafer 100 or the like come into contact with each other and are electrically connected to each other.

The surface of the second support plate 33 located above in FIG. 5 is the back surface F2 facing the first pitch conversion block 35. The second support plate 33 is formed with a second support hole 331 including a plurality of insertion holes through which the other end Pb of the probe Pr is inserted and supported. The other end Pb of the probe Pr is inserted into the second support hole 331 and is supported.

抜け Further, the retaining portion Pj of the probe Pr is disposed above the back surface F2 of the second support plate 33. This prevents the other end Pb of the probe Pr from dropping into the second support hole 331 of the second support plate 33, and prevents the tip of the other end Pb from reaching the rear surface of the second support plate 33. It is supported in a state protruding from F2. The apex of the other end Pb is pressed against the electrode 352 of the first pitch conversion block 35 so as to be electrically connected to each other.

Further, a third support plate 34 disposed between the first support plate 32 and the second support plate 33 has a third insertion hole formed by a plurality of insertion holes through which the body Pc of the probe Pr is inserted and supported. A support hole 341 is formed. The diameter D of the third support hole 341 is set to a value slightly larger than the value d + s (see FIG. 3) obtained by adding the diameter d of the probe Pr and the protrusion amount s of the protrusion Pd.

The probe Pr is supported by the support member 31 in a state where the protrusion Pd is disposed below the third support hole 341. In the initial stage of the inspection described later, the upward movement of the protrusion Pd is caused by the engagement surface Pd1 of the protrusion Pd abutting on the contact portion 342 formed of the peripheral wall located below the third support hole 341. Be regulated. Further, when a compressive load of a predetermined value or more is applied in the axial direction of the probe Pr, the protrusion Pd is configured to be able to separate from the contact portion 342 and enter the third support hole 341.

The first support plate 32, the second support plate 33, and the third support plate 34 have the corresponding first support hole 321, second support hole 331, and third support hole 341 in the left-right direction of FIG. The probe Pr is arranged so as to be slightly displaced in a direction orthogonal to the axial direction of the probe Pr. As a result, the probe Pr is set along the inclined line K inclined at a predetermined angle θ with respect to a perpendicular line V extending in the vertical direction of the facing surface F1 of the first support plate 32 and the back surface F2 of the second support plate 33. It has become.

The probe Pr may be inserted through the corresponding first support hole 321, second support hole 331, and third support hole 341 on the perpendicular V described above. Then, the first support plate 32, the second support plate 33, and the third support plate 34 are relatively displaced in the left-right direction in FIG. By displacing the holes 341 with each other, the probe Pr may be installed along the inclined line K.

5 shows an example in which one end Pa of each probe Pr supported by the first support plate 32 is supported in a state of being in contact with the inspection point 101 of the semiconductor wafer 100. Instead of this configuration, each probe Pr may be supported by the support member 31 in a state where one end Pa of each probe Pr and the inspection point 101 of the semiconductor wafer 100 are separated from each other by a predetermined distance. Good.

FIG. 6 is a cross-sectional view showing an initial stage of the inspection using the probe Pr, FIG. 7 is a cross-sectional view showing a late stage of the inspection using the probe Pr, and FIG. 6 is a graph showing a relationship with a compressive stress σ.

(6) In the initial stage of the inspection shown in FIG. 6, the semiconductor wafer 100 mounted on the above-mentioned sample stage is driven up and the inspection point 101 is pressed against one end Pa of the probe Pr with a predetermined pressing force A. According to the pressing force A, a compressive load A1 for compressing the one end Pa of the probe Pr in the axial direction and a pushing load A2 for pressing the one end Pa of the probe Pr obliquely act.

一端 One end Pa of the probe Pr is elastically deformed by being compressed in the axial direction according to the compression load A1. Further, in accordance with the lifting load A2, the peripheral surface Pa2 of the one end Pa is pressed against the contact portion 322 formed of the lower peripheral wall of the first support hole 321, and the contact portion 322 is used as a fulcrum to support the one end Pa of the probe Pr. Are elastically deformed so as to be curved in an arc shape.

Then, according to the compressive load B transmitted from the one end Pa of the probe Pr to the installation portion of the protrusion Pd, the locking surface Pd1 formed by the upper surface of the protrusion Pd is pressed against the contact portion 342 of the third support hole 341. As a result, the upward movement of the protrusion Pd is restricted. As a result, the one end portion of the probe Pr including the one end portion Pa of the probe Pr and the body portion Pc located below the protrusion Pd is compressed in the axial direction according to the compression load B. The probe Pr is elastically deformed, and a compressive stress σ is generated at one end of the probe Pr.

Further, a reaction force opposing the compressive load B, that is, a reaction force B1 for pressing the protrusion Pd downward and restricting the upward movement thereof, and a lateral movement of the protrusion Pd are provided at an intermediate portion in the vertical direction of the probe Pr. Restriction acts on the reaction force B2 that presses the protrusion Pd leftward in FIG. When the middle portion of the probe Pr in the vertical direction is pressed laterally in response to the reaction force B2, the probe Pr is elastically deformed so that its inclination angle becomes smaller than the initial inclination line K.

(4) As the inspection point 101 of the semiconductor wafer 100 is gradually driven upward in accordance with the progress of the inspection, the amount of compressive deformation λ at one end of the probe Pr gradually increases as shown in FIG. The compressive stress σ generated at the one end side portion of the probe Pr increases in proportion to the increase in the amount of compressive deformation λ.

In the initial stage of the inspection, since the compressive load B acts on the one end side portion of the probe Pr in a concentrated manner, the compressive stress σ generated in the probe Pr changes along the steep angle stress line σ1, and the amount of compressive deformation λ Only slightly increases the compressive stress σ generated at the one end side portion of the probe Pr. Therefore, the pressure contact force between the one end Pa of the probe Pr and the inspection point 101 of the semiconductor wafer 100 is sufficiently secured, and the oxide film on the electrode surface located at the inspection point 101 can be removed.

If the compressive load B acting on the one end side portion of the probe Pr further increases, the reaction force B2 pressing the protrusion Pd of the probe Pr to the side gradually increases, and accordingly, the axial direction of the probe Pr increases. Deformation is performed so that the inclination angle at the intermediate portion becomes gradually smaller. For example, as shown in FIG. 7, when the axial middle portion of the probe Pr is deformed so as to be substantially vertical, the protrusion Pd of the probe Pr separates from the contact portion 342 of the third support plate 34. Then, it sinks into the third support hole 341. As a result, the engagement between the contact portion 342 of the third support plate 34 and the protrusion Pd of the probe Pr is released.

As described above, when the locked state of the protrusion Pd by the contact portion 342 of the third support plate 34 is released, the other end portion of the probe Pr located above the third support plate 34, The same compressive load C as that at the one end of the probe Pr is also transmitted to the body Pc located above the portion Pd and the other end Pb of the probe Pr. As a result, the compressive load is distributed over the entire length of the probe Pr, and a substantially uniform compressive stress σ is generated in the entire probe Pr.

As a result, as shown in FIG. 8, at the time T1 at which the engagement between the contact portion 342 of the third support plate 34 and the protrusion Pd of the probe Pr is released, the rate of change of the compressive stress σ generated in the probe Pr is reduced. The inclination angle of the indicated stress line σ2 is smaller than in the initial stage of the inspection. Therefore, in the latter stage of the inspection, the pressure of the probe Pr against the inspection point 101 of the semiconductor wafer 100 does not rise sharply, and the adverse effects caused by the excessively high pressure are suppressed.

As shown in FIG. 7, the other end Pb of the probe Pr is pressed against the lower surface of the first pitch conversion block 35 in accordance with the compression load C transmitted to the other end of the probe Pr. A pressing force E that regulates the upward movement of the other end Pb of the probe Pr is applied to the top of the other end Pb. According to the pressing force E, the other end portion of the probe Pr, that is, the body portion Pc located above the protrusion Pd and the other end portion Pb of the probe Pr are point-symmetric with the one end portion of the probe Pr. Therefore, the entirety of the probe Pr including the one end portion and the other end portion of the probe Pr is substantially S-shaped.

As described above, a substantially rod-shaped probe Pr having one end Pa electrically connected to the inspection point 101 of the inspection object, a body Pc connected to the one end Pa, and another end Pb connected to the body Pc. Jig 3 including a support member 31 for supporting the probe Pr and an inspection apparatus including the inspection jig 3, the inspection jig 3 is detachably locked to the contact portion 342 of the support member 31. Since the probe Pr has a locking portion formed of the protruding portion Pd, it is possible to prevent the probe Pr from being excessively pressed against the electrode provided at the inspection point 101 and to press the probe Pr against the electrode surface. It is possible to remove the oxide film on the electrode surface while securing sufficient force.

That is, in the above-described first embodiment, the first support plate 32 that supports one end Pa of the probe Pr and the second support plate 33 that supports the other end Pb of the probe Pr are provided. A third support hole 341 through which the body Pc of the probe Pr is inserted and supported is formed in the three support plates 34. Then, a projection Pd, which is obtained by projecting a part of the body Pc in the radial direction of the probe Pr, is positioned below the third support hole 341, and the diameter D of the third support hole 341 is set to the diameter d of the probe Pr. The value is set slightly larger than the value (d + s) obtained by adding the protrusion amount s of the protrusion Pd.

According to the above configuration, in the initial stage of the test in which the compressive load B acting on the one end side portion of the probe Pr is small, the contact portion 342 formed by the lower peripheral wall of the third support hole 341 is provided with the protrusion Pd of the probe Pr. The locking portion made of abuts and is locked. In a later stage of the test in which the compression load B of the probe Pr becomes equal to or more than a predetermined value, the body Pc of the probe Pr is elastically deformed so that the protrusion Pd is immersed in the third support hole 341. The engagement between the portion Pd and the contact portion 342 can be released.

For this reason, in the initial stage of the inspection, the compressive load B concentrates on one end side portion of the probe Pr including the one end portion Pa of the probe Pr and a portion located below the protrusion Pd of the body portion Pc. In effect, only the one end side portion of the probe Pr is elastically deformed, and the amount of compressive deformation λ is generated. Therefore, as shown by a stress line σ1 in FIG. 8, the compressive stress σ generated at one end of the probe Pr can be rapidly increased in proportion to the amount of compressive deformation λ, and is provided at the inspection point 101 of the inspection object. The pressure contact force of the probe Pr against the electrode surface thus obtained can be sufficiently ensured, and the oxide film on the electrode surface can be effectively removed.

Further, at a later stage of the inspection, at the time T1 when the engagement between the protrusion Pd of the probe Pr and the contact portion 342 of the third support plate 34 is released, the compressive load acting on the probe Pr is applied to the entire length of the probe Pr. It can be evenly distributed throughout. Therefore, as in the stress line σ2, the rate of change of the compressive stress σ that increases in response to the increase in the amount of compressive deformation λ of the probe Pr is significantly reduced, and the probe Pr is pressed against the inspection point 101 of the inspection object. There is an advantage that an excessive increase in force can be effectively suppressed.

As described above, the probe Pr is brought into contact with the contact portion provided on the support member 31 of the probe Pr, specifically, the contact portion 342 formed of the lower peripheral wall of the third support hole 341 formed in the third support plate 34. Instead of the above-described first embodiment in which the locking portion (protruding portion Pd) is configured to be releasably locked, a separate locking plate for locking the locking portion of the probe Pr so as to be releasable is provided. The structure provided in the support member 31 may be sufficient.

However, as shown in the first embodiment, the protrusion Pd of the probe Pr can be disengaged by the lower peripheral wall of the third support hole 341 formed in the third support plate 34 that supports the body Pc of the probe Pr. When the abutting portion 342 for locking is configured, the function of supporting the body Pc of the probe Pr and the protrusion Pd of the probe Pr can be disengaged from the third support plate 34 configuring the support member 31. The function of locking can be provided. Therefore, with a simple configuration, the oxide film on the electrode surface provided at the inspection point 101 can be properly removed while stably supporting the probe Pr, and the pressure contact force of the probe Pr to the electrode is excessively high. There is an advantage that it can be suppressed.

In addition, for example, the third support plate 34 is omitted, and a contact portion formed by a lower peripheral wall of the first support hole 321 formed in the first support plate 32 is formed of a protrusion provided at one end Pa of the probe Pr. The locking portion may be configured to be removably locked. However, with this configuration, in the initial stage of the inspection, the compressive stress σ of the probe Pr may rapidly increase, and the pressure contact force of the probe Pr on the electrode surface of the inspection object may become excessively high.

In addition, the engaging portion 342 formed of the lower peripheral wall of the second support hole 331 formed in the second support plate 33 is disengaged from the engaging portion formed by the protrusion provided near the other end Pb of the probe Pr. Locking is also possible. However, in this configuration, since the compressive stress σ of the probe Pr gradually increases in the initial stage of the inspection, it is not possible to sufficiently secure the pressure contact force of the probe Pr to the electrode surface of the inspection object, and It is difficult to properly remove the oxide film.

For this reason, as shown in the above-described first embodiment, a protrusion Pd which is detachably engaged with the contact portion 342 formed of the lower peripheral wall of the third support hole 341 is provided on the body Pc of the probe Pr. It is desirable to have a configuration. Thus, in the initial stage of the inspection, a sufficient pressure contact force of the probe Pr against the electrode surface of the inspection object can be secured, and in the latter stage of the inspection, the contact between the locking portion of the probe Pr and the support member 31 can be achieved. By releasing the engagement with the part 342 at an appropriate time, it is possible to effectively prevent the pressure contact force of the probe Pr on the inspection object from becoming excessively high.

Further, in the case where a protrusion Pd, which is formed by projecting a part of the probe Pr in the radial direction, forms an engaging portion that is detachably engaged with the contact portion, one end of the probe Pr is provided. In the initial stage of the inspection in which the compressive load B acting on the portion of the probe Pr is small, the protruding portion Pd of the probe Pr is locked to the contact portion, and the compressive load is concentrated on the one end portion of the probe Pr. Thereby, the oxide film on the electrode surface can be effectively removed. Further, in a later stage of the inspection in which the compression load B of the probe Pr becomes equal to or more than the predetermined value, the probe Pr is elastically deformed to easily disengage the projection Pd from the abutting portion, so that the inspection object There is an advantage that it is possible to effectively suppress excessively high pressure contact force of the probe with respect to the above with a simple configuration.

The protrusion Pd formed on the probe Pr is not necessarily required to have the above-described triangular shape, but can be changed to various shapes such as a semicircle, a trapezoid, and a rectangle.

However, as shown in the above-described first embodiment, the protrusion Pd formed on the probe Pr is connected to the locking surface Pd1 extending in the radial direction of the body Pc, and one end of the probe Pr from the tip of the locking surface Pd1. When the support member 31 supports the probe Pr when the support member 31 supports the probe Pr, the inclined surface is formed along the wall surface of the third support hole 341 or the like. By sliding Pd2, the operation of moving the protrusion Pd below the third support plate 34 can be easily performed.

In the initial stage of the inspection, as shown in FIG. 6, the engaging portion 342 formed of the lower peripheral wall of the third support hole 341 is engaged with the engaging surface Pd1 of the projecting portion Pd so as to be engaged. A compressive load can be intensively applied to one end of the probe Pr. Further, after the inspection is completed, the semiconductor wafer 100 is lowered from the raised position shown in FIG. 7 and the pressing force A for pressing the one end Pa of the probe Pr upward is released. By sliding the inclined surface Pd2 along the wall surface of the three support holes 341, there is an advantage that the protrusion Pd can be smoothly moved below the third support plate 34.
(Second embodiment)

FIG. 9 is a cross-sectional view showing a configuration of an inspection jig 3a according to a second embodiment of the present invention, and FIG. 10 is a cross-sectional view showing a modification 3b of the inspection jig.

The probe Pra provided in the inspection jig 3a shown in FIG. 9 has a large-diameter portion Pe having a large radial dimension and a small-diameter portion Pf located above the large-diameter portion Pe. The large-diameter portion Pe of the probe Pra is easily formed, for example, by coating an acrylic resin or Teflon (registered trademark) on an intermediate portion in the axial direction of the probe Pra, or by electrodepositing a ring-shaped member by Ni electroforming. Is done.

The outer diameter da of the large-diameter portion Pe is set to a value slightly smaller than the diameter D of the third support hole 341 and is supported below the third support hole 341. As a result, the stepped portion Pe1 formed between the large diameter portion Pe and the small diameter portion Pf abuts on, for example, the abutting portion 342 formed of the lower peripheral wall of the third support hole 341 and is detachably locked. It is supposed to be.

In other words, in the initial stage of the inspection using the probe Pra, the step Pe1 abuts on the lower peripheral wall (the abutting part 342) of the third support hole 341 and the upward movement thereof is regulated. Then, when the compressive load B acting in the axial direction of the probe Pra becomes equal to or more than a certain value, the probe Pra is elastically deformed in accordance with the reaction force B2 acting on the step Pe1 of the probe Pra, and from the step Pe1. Then, the engaging portion is immersed in the third support hole 341. As a result, the engagement between the engaging portion (step Pe1) of the probe Pra and the contact portion 342 of the support member 31 can be released.

Therefore, in the initial stage of the inspection using the probe Pra, it is possible to properly remove the oxide film on the electrode surface located at the inspection point 101 by sufficiently securing the pressure contact force of the probe Pra against the inspection point 101. is there. In addition, in the later stage of the inspection using the probe Pra, it is possible to suppress the pressing force of the probe Pra against the inspection point 101 of the inspection object including the semiconductor wafer 100 or the like from becoming excessively high.

On the other hand, a modified example 3b of the inspection jig shown in FIG. 10 includes a large-diameter portion Pfa formed continuously from the axial middle portion of the body portion Pc to one end portion Pa, and an axial middle portion of the body portion Pc. A probe Prb having a small diameter portion Pfb formed continuously over the other end Pb is provided. For example, by cutting a rod-shaped body having a predetermined outer diameter, or by inserting a rod-shaped body constituting a small-diameter part Pfb into a cylindrical body constituting a large-diameter part Pfa, for example, a large-diameter body having a moderate rigidity. The probe Prb having the portion Pfa and the small-diameter portion Pfb can be easily formed.

The outer diameter db of the large-diameter portion Pfa is set to a value slightly smaller than the diameter D of the third support hole 341, so that the large-diameter portion Pfa and the small-diameter portion Pfb are set at an initial stage of the inspection using the probe Prb. The stepped portion Pe2 formed between the stepped portion and the stepped portion abuts on the lower peripheral wall (abutting portion 342) of the third support hole 341 to restrict upward movement of the stepped portion Pe2. Further, when the compressive load B acting in the axial direction of the probe Prb becomes equal to or more than a certain value, the probe Prc is elastically deformed in response to the reaction force B2 acting on the step Pe2 of the probe Prb. Is immersed in the third support hole 341. As a result, it is possible to release the engagement between the locking portion (step Pe2) of the probe Prc and the contact portion 342 of the support member 31.

Therefore, in the initial stage of the inspection using the probe Prb, it is possible to properly remove the oxide film on the electrode surface located at the inspection point 101 by sufficiently securing the pressure contact force of the probe Prb against the inspection point 101. is there. In addition, in a later stage of the inspection using the probe Prb, it is possible to effectively suppress an excessively high pressing force of the probe Prb against the inspection point 101 of the inspection object including the semiconductor wafer 100 or the like.
(Third embodiment)

FIG. 11 is a cross-sectional view showing a configuration of an inspection jig 3c according to a third embodiment of the present invention, and FIG. 12 is a cross-sectional view showing a later stage of inspection in the third embodiment of the inspection jig 3c.

プローブ The probe Prc provided on the inspection jig 3c has a recessed portion Pg in which a part of the probe in the axial direction is recessed in the radial direction. The third support hole 341 formed in the third support plate 34 has a diameter D slightly larger than the diameter d of the probe Prc. Then, as shown in FIG. 11, the axially intermediate portion of the probe Prc is supported by the third support plate 34 in a state where the peripheral wall of the third support hole 341 is fitted into the recess Pg of the probe Prc. It is configured as follows.

According to the above-described configuration, in the initial stage of the inspection in which the compressive load B acting in the axial direction of the probe Prc is small, the step Pg1 formed between the recessed portion Pg and the peripheral surface of the probe Prc, that is, FIG. The side wall of the concave portion Pg located on the lower side abuts on the contact portion 342 formed of the lower peripheral wall of the third support hole 341, and the upward movement of the concave portion Pg is regulated. Then, when the compressive load B acting in the axial direction of the probe Prc becomes equal to or more than a certain value, the probe Prc is elastically deformed in accordance with the reaction force B2 acting on the step Pg1 of the probe Prc. The locking portion including the step portion Pg1 is separated from the contact portion 342. As a result, the engagement between the engaging portion (step portion Pg1) of the probe Prc and the contact portion 342 can be released.

Therefore, in the initial stage of the inspection using the probe Prc, it is possible to properly remove the oxide film on the electrode surface located at the inspection point 101 by sufficiently securing the pressure contact force of the probe Prc against the inspection point 101. is there. Further, in a later stage of the inspection using the probe Prc, it is possible to effectively suppress an excessive increase in the pressure of the probe Prc against the inspection point 101 of the inspection object including the semiconductor wafer 100 or the like.
(Fourth embodiment)

FIG. 13 is a cross-sectional view showing a configuration of an inspection jig 3d according to a third embodiment of the present invention, and FIG. 14 is a cross-sectional view showing a later stage of inspection in the third embodiment of the inspection jig 3d.

プローブ The probe Prd provided on the inspection jig 3d has a bent portion Ph in which a part in the axial direction is bent in the radial direction. The third support hole 341 formed in the third support plate 34 has a diameter D slightly larger than the width W of the bent portion Ph. The upper surface Ph1 of the locking portion formed of the bent portion Ph is configured to be detachably locked to, for example, a contact portion 342 formed of a lower peripheral wall of the third support hole 341.

In the initial stage of the inspection using the probe Prd, as shown in FIG. 13, the upper surface Ph1 of the bent portion Ph abuts on the lower peripheral wall (abutting portion 342) of the third support hole 341 and the upward movement thereof is restricted. Is done. Further, when a compression load B having a predetermined value or more is applied in the axial direction of the probe Prd during the inspection using the probe Prd, as shown in FIG. It can be immersed in the third support hole 341. Thus, the engagement portion formed by the bent portion Ph is separated from the contact portion 342, and the engagement between the engagement portion of the probe Prd and the contact portion 342 of the support member 31 can be released.

Therefore, in the initial stage of the inspection using the probe Prd, it is possible to properly remove the oxide film on the electrode surface located at the inspection point 101 by sufficiently securing the pressure contact force of the probe Prc against the inspection point 101. is there. Further, in the latter stage of the inspection using the probe Prd, it is possible to effectively suppress the pressure of the probe Prd from excessively increasing against the inspection point 101 of the inspection object including the semiconductor wafer 100 or the like.

That is, the inspection jig according to the present invention is a substantially rod-shaped probe having one end electrically connected to an inspection point of an inspection object, a body connected to the one end, and the other end connected to the body. And a support member for supporting the probe, wherein the probe has a locking portion that is removably locked to a contact portion provided on the support member, and the locking portion is At the time of inspection using a probe, when a compressive load of a predetermined value or more acts on the probe in the axial direction, the probe is detached from the contact portion.

According to this configuration, in the initial stage of the inspection in which the compressive load acting on the one end portion of the probe is small, the locking portion of the probe is locked to the contact portion of the support member, and the probe is fixed to the one end portion of the probe. Compression load acts intensively. For this reason, the pressure contact force of the probe to the electrode surface provided at the inspection point of the inspection object is sufficiently ensured, and the oxide film on the electrode surface can be properly removed. In a later stage of the test in which the compressive load of the probe is equal to or more than the predetermined value, the probe is elastically deformed to release the engagement between the locking portion and the contact portion of the support member, thereby acting on the probe. The compressive load can be evenly distributed over the entire length of the probe. Therefore, there is an advantage that it is possible to effectively suppress an excessive increase in the pressure contact force of the probe to the inspection object.

Further, the support member has a support plate formed with a support hole through which the probe is inserted and supported, and the locking portion abuts on the abutment portion formed by a peripheral wall of the support hole. It is preferable that the engagement with the contact portion is released by being locked and immersing in the support hole.

According to this configuration, the support plate constituting the support member can have both the function of supporting the probe and the function of removably locking the locking portion of the probe. Therefore, with a simple configuration, the oxide film on the electrode surface provided at the inspection point can be appropriately removed while stably supporting the probe, and the pressure contact force of the probe to the electrode is not excessively increased. There is an advantage that it can be suppressed.

The support member may include a first support plate that supports one end of the probe, a second support plate that supports the other end of the probe, and a third support plate that supports a body of the probe. It is preferable that the contact portion includes a peripheral wall of a third support hole formed in the third support plate.

According to this configuration, in the initial stage of the inspection using the probe, the locking portion of the probe is removably locked to the abutting portion provided on the third support plate, so that the probe body can be appropriately fixed. , A sufficient pressure contact force of the probe against the electrode surface of the inspection object can be secured. In addition, in the later stage of the inspection, the engagement between the engaging portion of the probe and the abutting portion of the support member is released at an appropriate time, thereby effectively preventing an excessively high pressing force of the probe against the inspection object. There is an advantage that it can be suppressed.

It is preferable that the locking portion is constituted by a protrusion that protrudes a part of the probe in a radial direction of the probe.

According to this configuration, in the initial stage of the inspection in which the compressive load acting on the one end portion of the probe is small, the protruding portion of the probe is engaged with the contact portion, and the compressive load is concentrated on the one end portion of the probe. By properly acting, the oxide film on the electrode surface can be properly removed. In a later stage of the test in which the compression load of the probe is equal to or more than a predetermined value, the probe is elastically deformed to easily release the engagement between the locking portion and the abutting portion, so that the probe can Excessive increase in the pressing force can be effectively suppressed with a simple configuration.

The protrusion is formed in a triangular shape having a locking surface extending in a radial direction of the probe, and a tapered inclined surface extending from a tip of the locking surface toward one end of the probe. It is preferable that the locking surface is releasably locked by contacting the contact portion.

According to this configuration, when the support member supports the probe, the operation of moving the protrusion of the probe below the support plate or the like can be easily performed by sliding the inclined surface along the wall surface of the support hole. be able to. Further, after the inspection is completed, the protrusion of the probe can be smoothly moved below the support plate by sliding the inclined surface along the wall surface of the support hole according to the restoring force of the probe. There are advantages.

The probe has a large-diameter portion having a large radial dimension and a small-diameter portion having a small radial dimension, and the locking portion has a step formed between the large-diameter portion and the small-diameter portion. It is good also as composition consisting of.

According to this configuration, in the initial stage of the inspection using the probe, the step portion can be brought into contact with the contact portion of the support member to restrict upward movement and the like. Then, when the compressive load acting in the axial direction of the probe becomes equal to or more than a certain value, the probe is elastically deformed to immerse the step into the support hole, etc. Can be released.

It is preferable that the large-diameter portion is formed of a bulging portion formed in a part of the body portion.

According to this configuration, the large-diameter portion is provided, for example, by coating an acrylic resin or Teflon (registered trademark) on an intermediate portion in the axial direction of the probe, or by electrodepositing a ring-shaped member by Ni electroforming. Probes can be easily formed.

The large diameter portion is formed continuously from the axial middle portion of the body portion to the one end portion, and the small diameter portion is formed continuously from the axial middle portion of the body portion to the other end portion. May be done.

According to this configuration, the rod-shaped body is cut, or the rod-shaped body constituting the small-diameter portion is inserted into the cylindrical body constituting the large-diameter portion. Can be easily formed.

Further, the probe has a recessed portion in which a part of the probe in the axial direction is recessed in the radial direction, and the locking portion is a stepped portion formed between the recessed portion and a peripheral surface of the probe. May be used.

According to this configuration, in the initial stage of the inspection in which the compressive load acting on the probe in the axial direction is small, the step formed between the recessed portion and the peripheral surface of the probe is abutted with the lower peripheral wall of the support hole. The upward movement or the like of the locking portion composed of the step portion is restricted by contact with the portion. Then, when the compressive load acting in the axial direction of the probe becomes a certain value or more, by elastically deforming the probe, the locking portion of the probe consisting of the step portion of the probe is separated from the contact portion, The engagement between the locking portion of the probe and the contact portion of the support member can be released.

In addition, the probe may have a bent portion in which a part of the probe in the axial direction is bent in the radial direction, and the locking portion may be configured by the bent portion.

According to this configuration, in the initial stage of the inspection using the probe, the engaging portion formed by the upper surface of the bent portion or the like is brought into contact with the abutting portion formed by the lower peripheral wall of the support hole, thereby moving the probe upward. Etc. can be regulated. In addition, when a compressive load of a certain value or more is applied in the axial direction of the probe, the probe is elastically deformed, so that the bent portion of the probe is immersed in the support hole, thereby separating the bent portion from the contact portion. Thus, the engagement between the bent portion of the probe and the contact portion of the support member can be released.

According to this configuration, in the initial stage of the inspection by the inspection device, the pressure contact force of the probe to the electrode surface provided at the inspection point of the inspection object is sufficiently ensured, so that the oxide film on the electrode surface is appropriately removed. can do. In a later stage of the test in which the compression load of the probe is equal to or more than a predetermined value, the compression load acting on the probe is evenly distributed over the entire length of the probe, so that the pressure contact force of the probe to the inspection object is excessively increased. There is an advantage that the increase can be effectively suppressed.

The inspection jig and the inspection apparatus having such a configuration can remove an oxide film on the electrode surface while suppressing an excessive increase in the pressure of the probe against the electrode of the inspection object.

This application is based on Japanese Patent Application No. 2018-133737 filed on Jul. 31, 2018, the contents of which are included in the present application. It should be noted that the specific embodiments or examples made in the section of the mode for carrying out the invention clarify the technical contents of the present invention, and the present invention is not limited to such specific examples. It is not to be construed in a limited sense only.

1 semiconductor inspection equipment (inspection equipment)
Reference Signs List 3 inspection jig 4 inspection part 6 sample table 6a mounting part 8 inspection processing part 31 support member 32 first support plate 33 second support plate 34 third support plate 35 first pitch conversion block 36 second pitch conversion block 37 connection Plate 38 Connecting member 100 Semiconductor wafer (object to be inspected)
101 Inspection point 321 First support hole 331 Second support hole 341 Third support hole 342 Contact part 351 Wiring 352 Electrode 361 Wiring 362 Electrode Pa One end Pb Other end Pc Body Pd Projection (locking part)
Pd1 Locking surface Pd2 Inclined surface Pe Large diameter portion Pe1 Step (locking portion)
Pe2 step (locking part)
Peb Large diameter part Pf Small diameter part Pfb Small diameter part Pg Recessed part Pg1 Step (locking part)
Ph bending part (locking part)

Claims

One end portion that is conductively connected to the inspection point of the inspection object, a body portion connected to the one end portion, and a substantially rod-shaped probe having the other end portion connected to the body portion,
And a support member for supporting the probe,
The probe has a locking portion that is removably locked to a contact portion provided on the support member,
An inspection jig configured to detach from the abutting portion when a compressive load having a predetermined value or more is applied in an axial direction of the probe during an inspection using the probe.
The support member has a support plate formed with a support hole through which the probe is inserted and supported,
The locking portion is locked by contacting the contact portion formed by the peripheral wall of the support hole, and is immersed in the support hole to release the engagement with the contact portion. The inspection jig according to claim 1, which is configured.
The support member has a first support plate that supports one end of the probe, a second support plate that supports the other end of the probe, and a third support plate that supports a body of the probe. ,
The inspection jig according to claim 2, wherein the abutting portion comprises a peripheral wall of a third support hole formed in the third support plate.
4. The inspection jig according to claim 2, wherein the locking portion is configured by a protrusion that protrudes a part of the probe in a radial direction of the probe. 5.
The protrusion is formed in a triangular shape having a locking surface extending in the radial direction of the probe, and a tapered inclined surface extending from the tip of the locking surface toward one end of the probe,
The inspection jig according to claim 4, wherein the locking surface is detachably locked by contacting the contact portion.
The probe has a large diameter portion having a large radial dimension and a small diameter portion having a small radial dimension,
The inspection jig according to claim 2, wherein the locking portion comprises a step formed between the large diameter portion and the small diameter portion.
The inspection jig according to claim 6, wherein the large-diameter portion comprises a bulge formed in a part of the body.
The large diameter portion is formed continuously from the axial middle portion of the body portion to the one end portion,
The inspection jig according to claim 6, wherein the small diameter portion is formed continuously from an axial middle portion of the body portion to the other end portion.
The probe has a concave portion in which a part of the axial direction is concave in the radial direction,
The inspection jig according to claim 2, wherein the locking portion comprises a step formed between the recessed portion and a peripheral surface of the probe.
The probe has a bent portion in which a part of the axial direction is bent in the radial direction,
The inspection jig according to claim 2, wherein the locking portion includes the bent portion.
An inspection apparatus that includes the inspection jig according to any one of claims 1 to 10, and inspects the inspection object by bringing the probe supported by the inspection jig into contact with the inspection object.