TWM572991U - A probe device with stacking spring - Google Patents
A probe device with stacking spring Download PDFInfo
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- TWM572991U TWM572991U TW107203998U TW107203998U TWM572991U TW M572991 U TWM572991 U TW M572991U TW 107203998 U TW107203998 U TW 107203998U TW 107203998 U TW107203998 U TW 107203998U TW M572991 U TWM572991 U TW M572991U
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Abstract
一種具有彈性之探針裝置,包括有絕緣基板及一組探針所組成,該絕緣基板有信號輸出入之接點,該探針係黏著於絕緣基板上之接點並且垂直於絕緣基板,該探針係以長條形模組與圓形模組往上堆疊至所要求的高度,其中長條形模組係以不同角度堆疊,藉此組成一組具有彈性之探針裝置。 An elastic probe device comprising an insulating substrate and a set of probes having signal contacts, the probes being adhered to the contacts on the insulating substrate and perpendicular to the insulating substrate, The probes are stacked up to a desired height with a long module and a circular module, wherein the elongated modules are stacked at different angles to form a set of resilient probe devices.
Description
本創作係有關於一種具有彈性之探針裝置,尤指一種可用以協助半導體晶圓精密量測,可將探針頭平均且精確的接觸在半導體晶圓測試點上,可達快速及精準測試作用,有效的增加半導體晶圓測試效率之探針裝置。 This creation is about a flexible probe device, especially one that can be used to assist in the precision measurement of semiconductor wafers. The probe head can be contacted on the semiconductor wafer test points evenly and accurately for fast and accurate testing. A probe device that effectively increases the efficiency of semiconductor wafer testing.
近年來半導體產業迅速發展,製程技術突飛猛進,現階段電晶體通道(Channel Length)已發展到最新的7奈米製程,而積體電路(IC)體積愈來愈小,腳數愈來愈多,為了從微小密集的半導體晶圓銲墊(pad)或凸塊(bump),引出晶片信號,以維持半導體晶圓之精確測試運作,通常需要有精準的探針裝置,用以有效直接接觸被測半導體晶圓銲墊(pad)或凸塊(bump),來增加測試效率。 In recent years, the semiconductor industry has developed rapidly and the process technology has advanced by leaps and bounds. At this stage, the channel length has been developed to the latest 7 nm process, and the integrated circuit (IC) is getting smaller and smaller, and the number of pins is increasing. In order to extract wafer signals from tiny dense semiconductor wafer pads or bumps to maintain accurate test operation of the semiconductor wafer, precise probe devices are often required for effective direct contact with the measured Semiconductor wafer pads or bumps to increase test efficiency.
如第1圖所示,其係一種習知之半導體晶圓測試之探針裝置,該探針裝置包括有一探針卡10a,該探針卡10a上佈有線路,線路上安置一組探針11a,該組探針11a的針尖直接接觸半導體晶圓銲墊(pad)或凸塊(bump)12a,引出晶片信號至探針卡10a上進行測試。 As shown in FIG. 1, it is a conventional semiconductor wafer test probe device. The probe device includes a probe card 10a. The probe card 10a is provided with a line on which a set of probes 11a are disposed. The tip of the set of probes 11a directly contacts the semiconductor wafer pad or bump 12a, and the wafer signal is extracted onto the probe card 10a for testing.
習知之半導體晶圓測試之探針裝置,其係利用手工方式,將數十根至數百根的探針,依據被測試半導體晶圓銲墊或凸塊位置,將探針安置於探針卡上,藉此探針直接接觸半導體晶圓銲墊或凸塊,引出晶片信號進行測試,此類探針裝置因係利用手工方式製作,探針體積大,因此無法滿足晶片微小化和高腳數化的須求,同時探針為求彈性化,其係使用高鋼性金屬製作,如鎢、鎳等,此類金屬介電性不甚良好,容易造成測試誤差或刮傷半導體晶圓銲墊或凸塊。 The conventional semiconductor wafer testing probe device uses a manual method to place tens to hundreds of probes according to the position of the semiconductor wafer pad or bump to be tested, and the probe is placed on the probe card. In this way, the probe directly contacts the semiconductor wafer pad or the bump, and the wafer signal is taken out for testing. Such a probe device is manually fabricated, and the probe is bulky, so the wafer miniaturization and the high number of pins cannot be satisfied. At the same time, the probe is elasticized. It is made of high-strength metal, such as tungsten or nickel. The metal is not very good in dielectric properties, which is easy to cause test error or scratch the semiconductor wafer pad. Or bumps.
本創作提供一種具有彈性之探針裝置,包括有一絕緣基板、一組數十根至數萬根的探針,該絕緣基板上有貫穿孔之接點,此接點係依據被測試半導體晶圓銲墊或凸塊位置相對應排列,該組探針係黏著於絕緣基板之接點並且垂直於絕緣基板,該探針係以長條形模組與圓形模組往上堆疊至所要求的高度,其中長條形模組係以不同角度垂直堆疊,藉此組成一組具有彈性的探針裝置。 The present invention provides an elastic probe device comprising an insulating substrate, a set of tens to tens of thousands of probes having through-hole contacts on the insulating substrate, the contacts being based on the semiconductor wafer under test The pads or bumps are arranged in a corresponding position. The probes are adhered to the contacts of the insulating substrate and perpendicular to the insulating substrate. The probes are stacked with the elongated module and the circular module to the required position. Height, wherein the elongated modules are stacked vertically at different angles to form a set of resilient probe devices.
本創作所提供具有彈性之探針裝置,其探針係使用各式複合導電材料電鍍而成,成份有銅、鎳、金、鈀、錫等,因其含有各式材料,所以探針兼具有高導電性、高鋼性以及高奈耗性,同時探針垂直於被測物,使探針頭與被測物測點具有最大接觸面積,有效降低觸點阻抗與熱度值,進一步,其探針係以長條形模組與圓形模組以不同角度垂直堆疊,藉此組成一組具有彈性的探針,此形式之探針架構在受壓時,力矩均勻,不偏移或變形,針尖與被測物測點對位精準,整體共面性佳,同時探針以微影曝 光成形方式電鍍製作,體積微小化,可測得更微小細密的測點。 The present invention provides an elastic probe device, the probes are electroplated using various composite conductive materials, and the components are copper, nickel, gold, palladium, tin, etc., because they contain various materials, the probes have both It has high conductivity, high rigidity and high negligence. At the same time, the probe is perpendicular to the object to be tested, so that the probe head and the measured object have the largest contact area, effectively reducing the contact resistance and heat value. Further, The probe is vertically stacked at different angles from the long module and the circular module, thereby forming a set of elastic probes. The probe structure of this form has uniform torque, no offset or deformation when pressed. The tip of the needle and the measured object are accurately aligned, and the overall coplanarity is good, and the probe is exposed by micro-image. The light forming method is electroplated, and the volume is small, and the measurement points which are finer and finer can be measured.
10a‧‧‧探針卡 10a‧‧‧ probe card
11a‧‧‧探針 11a‧‧‧Probe
12a‧‧‧半導體晶圓銲墊(pad)或凸塊(bump) 12a‧‧‧Semiconductor wafer pads or bumps
10‧‧‧絕緣基板 10‧‧‧Insert substrate
11‧‧‧接點 11‧‧‧Contacts
12‧‧‧探針 12‧‧‧ probe
13‧‧‧圓形模組 13‧‧‧Circular module
14‧‧‧長條形模組 14‧‧‧Long strip module
15‧‧‧圓形模組 15‧‧‧Circular module
16‧‧‧長條形模組 16‧‧‧Long strip module
第1圖係習知之半導體晶圓測試探針裝置之立體圖。 Figure 1 is a perspective view of a conventional semiconductor wafer test probe device.
第2圖係本創作之立體圖。 Figure 2 is a perspective view of the creation.
第3圖係本創作之探針立體分解圖。 Figure 3 is an exploded perspective view of the probe of the present invention.
請參閱第2圖及第3圖,本創作係提供一種具有彈性之探針裝置,該裝置包括有一絕緣基板10,該絕緣基板10上有多個貫穿孔之接點11,此接點11係依據被測試半導體晶圓銲墊或凸塊位置相對應排列,每一接點11上黏著有一探針12,該探針12系垂直於絕緣基板10,該探針12係以長條形模組與圓形模組堆疊而成,該探針12之最底層為圓形模組13,該圓形模組13係以微影曝光成形方式電鍍於接點11上,長條形模組14係以微影曝光成形方式電鍍堆疊在圓形模組13上,圓形模組15係以微影曝光成形方式電鍍堆疊在長條形模組14上,長條形模組16係以微影曝光成形方式電鍍堆疊在圓形模組15上,該長條形模組16係與長條形模組14形成90度角度差,如此重復堆疊至探針12所須之高度,藉以上步驟組成一組具有彈性的探針裝置。 Referring to FIG. 2 and FIG. 3, the present invention provides an elastic probe device, which includes an insulating substrate 10 having a plurality of through-hole contacts 11 on the insulating substrate 10. Depending on the position of the solder pads or bumps to be tested, a probe 12 is adhered to each of the contacts 11, and the probe 12 is perpendicular to the insulating substrate 10, and the probe 12 is a long strip module. The bottom layer of the probe 12 is a circular module 13 which is electroplated on the contact 11 by a micro-image exposure forming method, and the long-shaped module 14 is formed. Electroplated and stacked on the circular module 13 by micro-image exposure forming, the circular module 15 is electroplated and stacked on the elongated module 14 by micro-image exposure forming, and the long-shaped module 16 is exposed by lithography. The forming method is electroplated and stacked on the circular module 15, and the elongated module 16 forms a 90 degree angle difference with the elongated module 14, so that the height required for stacking to the probe 12 is repeated, and the above steps form a A set of flexible probe devices.
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Priority Applications (1)
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TW107203998U TWM572991U (en) | 2018-03-28 | 2018-03-28 | A probe device with stacking spring |
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TW107203998U TWM572991U (en) | 2018-03-28 | 2018-03-28 | A probe device with stacking spring |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111579832A (en) * | 2020-05-18 | 2020-08-25 | 武汉精毅通电子技术有限公司 | Probe and connector suitable for high-current high-speed signal test |
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2018
- 2018-03-28 TW TW107203998U patent/TWM572991U/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111579832A (en) * | 2020-05-18 | 2020-08-25 | 武汉精毅通电子技术有限公司 | Probe and connector suitable for high-current high-speed signal test |
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