JPWO2019230705A1 - 高周波モジュール - Google Patents
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Abstract
Description
本発明の第1実施形態にかかる高周波モジュール1aについて、図1〜図2を参照して説明する。なお、図1は図2のA−A矢視断面図、図2は高周波モジュール1aのシールド膜5を除いた状態の平面図である。
本発明の第2実施形態にかかる高周波モジュール1bについて、図3〜図4を参照して説明する。なお、図3は高周波モジュール1bの断面図であって、図4のB−B矢視断面図、図4は高周波モジュール1bのシールド膜5を除いた状態の平面図である。
上記した実施形態では、線状に配置されたシールド部材60の一方側に、各ボンディングワイヤ60a〜60cのファーストボンド側端部に接続される接続電極72a〜72cが配置され、他方側に、各ボンディングワイヤ60a〜60cのセカンドボンド側端部に接続される接続電極73a〜73cが配置されていたが、図5および図6に示す高周波モジュール1cのように、シールド部材61の中央部に各ボンディングワイヤ61a〜61dのファーストボンド側端部に接続される接続電極74a〜74dが配置され、シールド部材61の両端部に各ボンディングワイヤ61a〜61dのセカンドボンド側端部に接続される接続電極75a〜75dが配置されていてもよい。このとき、部品3aと部品3cとで挟まれた位置、すなわち、部品3aと部品3cが対向している部分に挟まれた領域に、ファーストボンド側用の接続電極74a〜74dが配置されることになる。このように、各ボンディングワイヤ61a〜61dおよび各接続電極74a〜74d、75a〜75dの配置を変えることにより、任意の位置のシールド性能を強化させることができる。
本発明の第3実施形態にかかる高周波モジュール1dについて、図7〜図8を参照して説明する。なお、図7は高周波モジュール1dの断面図であって、図8のD−D矢視断面図、図8は図7のシールド膜5を除いた状態の平面図である。
上記した実施形態では、最も弧の高さの低いボンディングワイヤ62a、62bが2つ配置されていたが、図9および図10に示す高周波モジュール1eのように、最も弧の高さの低いボンディングワイヤ63a〜63dが4つ配置され、それらを1つのボンディングワイヤ63eが跨ぐように配置されて、シールド部材63が形成されていてもよい。最も弧の高さの低いボンディングワイヤ63a〜63dの数を増やすことにより、各ボンディングワイヤ63a〜63dの両端部に接続される接続電極78a〜78d、79a〜79dの配置間隔を小さくすることができるため、シールド性能を強化したい部分が広い場合にも、シールド性能を落とすことなくシールド部材63を形成することができる。
2 多層配線基板(配線基板)
3a 部品(第1部品)
3c 部品(第2部品)
4 封止樹脂層
5 シールド膜
6、60〜63 シールド部材
6a〜6c ボンディングワイヤ
70a〜70d、71a〜71d 接続電極
Claims (7)
- 配線基板と、
前記配線基板の主面に実装された第1部品と、
複数の弧状のボンディングワイヤで構成された、少なくとも前記第1部品をシールドするためのシールド部材と、
前記配線基板の前記主面に形成され、それぞれ、いずれかの前記ボンディングワイヤの端部が接続される複数の接続電極と、
前記第1部品および前記複数のボンディングワイヤを封止する封止樹脂層とを備え、
前記複数の接続電極は、前記ボンディングワイヤの一端部が接続されるものと、他端部が接続されるものとを含めて、前記配線基板の前記主面に対して垂直な方向から見たときに、前記第1部品の端縁に沿って一列に配列されており、
前記複数のボンディングワイヤの中には、弧の高さが異なるものがあり、弧の高さの高い方の前記ボンディングワイヤは、弧の高さの低い方の前記ボンディングワイヤを跨いでいる
ことを特徴とする高周波モジュール。 - 前記配線基板の前記主面に実装された第2部品をさらに備え、
前記シールド部材は、前記第1部品と前記第2部品とに挟まれている部分と、前記第1部品と前記第2部品とに挟まれていない部分とがあり、
前記複数の接続電極のうち、前記第1部品と前記第2部品に挟まれている部分に配置されるものは、前記第1部品と前記第2部品に挟まれていない部分に配置されるものよりも、隣接する前記接続電極の間隔が狭い、
ことを特徴とする請求項1に記載の高周波モジュール。 - 前記複数の接続電極は、
前記第1部品と前記第2部品に挟まれている部分に配置されるものは、前記ボンディングワイヤの両端部のうち、接合の始点となる端部が接続され、
前記第1部品と前記第2部品に挟まれていない部分に配置されるものは、前記ボンディングワイヤの両端部のうち、接合の終点となる端部が接続される
ことを特徴とする請求項2に記載の高周波モジュール。 - 前記弧の高さが低い方のボンディングワイヤが複数あり、
当該弧の高さが低い方のボンディングワイヤの端部が接続される前記接続電極は、いずれも、前記弧の高さが高い方のボンディングワイヤの一端部が接続される前記接続電極と、他端部が接続される前記接続電極との間に配置されることにより、前記弧の高さが高い方のボンディングワイヤが、当該複数の弧の高さが低い方の前記ボンディングワイヤを跨いでいることを特徴とする請求項1に記載の高周波モジュール。 - 前記封止樹脂層は、前記配線基板の前記主面に当接する当接面と、前記当接面に対向する対向面と、前記当接面と前記対向面の端縁同士を繋ぐ側面とを有し、
前記封止樹脂層の前記対向面と前記側面とを少なくとも被覆するシールド膜をさらに備えることを特徴とする請求項1ないし4のいずれか1項に記載の高周波モジュール。 - 前記弧の高さが高い方のボンディングワイヤは、一部が前記封止樹脂層の前記対向面から露出して、前記シールド膜に接触していることを特徴とする請求項5に記載の高周波モジュール。
- 前記複数のボンディングワイヤは、いずれも少なくとも一端部が前記接続電極を介して、前記配線基板に形成された共通のグランド電極に接続されていることを特徴とする請求項1ないし6のいずれか1項に記載の高周波モジュール。
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Application Number | Priority Date | Filing Date | Title |
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JP2018105947 | 2018-06-01 | ||
JP2018105947 | 2018-06-01 | ||
PCT/JP2019/021049 WO2019230705A1 (ja) | 2018-06-01 | 2019-05-28 | 高周波モジュール |
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JPWO2019230705A1 true JPWO2019230705A1 (ja) | 2021-04-08 |
JP7010372B2 JP7010372B2 (ja) | 2022-01-26 |
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JP (1) | JP7010372B2 (ja) |
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CN220189619U (zh) * | 2020-10-22 | 2023-12-15 | 株式会社村田制作所 | 电路模块 |
WO2023062758A1 (ja) * | 2021-10-13 | 2023-04-20 | 三菱電機株式会社 | 高周波半導体パッケージ |
Citations (7)
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JP2005050868A (ja) * | 2003-07-29 | 2005-02-24 | Kyocera Corp | 電子装置 |
US20070241440A1 (en) * | 2004-03-04 | 2007-10-18 | Skyworks Solutions, Inc. | Overmolded semiconductor package with a wirebond cage for EMI shielding |
WO2008093414A1 (ja) * | 2007-01-31 | 2008-08-07 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
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US10134682B2 (en) * | 2015-10-22 | 2018-11-20 | Avago Technologies International Sales Pte. Limited | Circuit package with segmented external shield to provide internal shielding between electronic components |
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JP2005050868A (ja) * | 2003-07-29 | 2005-02-24 | Kyocera Corp | 電子装置 |
US20070241440A1 (en) * | 2004-03-04 | 2007-10-18 | Skyworks Solutions, Inc. | Overmolded semiconductor package with a wirebond cage for EMI shielding |
WO2008093414A1 (ja) * | 2007-01-31 | 2008-08-07 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
US8012868B1 (en) * | 2008-12-15 | 2011-09-06 | Amkor Technology Inc | Semiconductor device having EMI shielding and method therefor |
WO2016181954A1 (ja) * | 2015-05-11 | 2016-11-17 | 株式会社村田製作所 | 高周波モジュール |
JP2017084898A (ja) * | 2015-10-26 | 2017-05-18 | 株式会社村田製作所 | 高周波モジュール |
US20170263568A1 (en) * | 2016-03-10 | 2017-09-14 | Amkor Technology, Inc. | Semiconductor device having conductive wire with increased attachment angle and method |
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US11348894B2 (en) | 2022-05-31 |
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