JPWO2019093121A1 - ペースト組成物、半導体装置及び電気・電子部品 - Google Patents
ペースト組成物、半導体装置及び電気・電子部品 Download PDFInfo
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- JPWO2019093121A1 JPWO2019093121A1 JP2019552699A JP2019552699A JPWO2019093121A1 JP WO2019093121 A1 JPWO2019093121 A1 JP WO2019093121A1 JP 2019552699 A JP2019552699 A JP 2019552699A JP 2019552699 A JP2019552699 A JP 2019552699A JP WO2019093121 A1 JPWO2019093121 A1 JP WO2019093121A1
- Authority
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- Prior art keywords
- copper
- acid
- fine particles
- paste composition
- copper fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 title claims abstract description 86
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000010949 copper Substances 0.000 claims abstract description 198
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 190
- 229910052802 copper Inorganic materials 0.000 claims abstract description 188
- 239000010419 fine particle Substances 0.000 claims abstract description 110
- 239000003960 organic solvent Substances 0.000 claims abstract description 39
- 150000001414 amino alcohols Chemical class 0.000 claims abstract description 25
- 239000000126 substance Substances 0.000 claims abstract description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 11
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 17
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 10
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 150000002440 hydroxy compounds Chemical class 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 22
- 238000010304 firing Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 description 56
- -1 copper carboxylate Chemical class 0.000 description 30
- 238000010438 heat treatment Methods 0.000 description 28
- 230000001603 reducing effect Effects 0.000 description 24
- 239000002253 acid Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 19
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- 238000009835 boiling Methods 0.000 description 12
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 11
- 229910001431 copper ion Inorganic materials 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000002156 mixing Methods 0.000 description 10
- 229920001187 thermosetting polymer Polymers 0.000 description 10
- 239000000047 product Substances 0.000 description 9
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- 239000011800 void material Substances 0.000 description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
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- 238000012360 testing method Methods 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
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- 125000003277 amino group Chemical group 0.000 description 6
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
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- 239000004593 Epoxy Substances 0.000 description 5
- 125000005262 alkoxyamine group Chemical group 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 5
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- 125000001424 substituent group Chemical group 0.000 description 5
- 238000005979 thermal decomposition reaction Methods 0.000 description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 4
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 4
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 4
- YCLSOMLVSHPPFV-UHFFFAOYSA-N 3-(2-carboxyethyldisulfanyl)propanoic acid Chemical compound OC(=O)CCSSCCC(O)=O YCLSOMLVSHPPFV-UHFFFAOYSA-N 0.000 description 4
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical group NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 description 4
- 239000012691 Cu precursor Substances 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 150000003973 alkyl amines Chemical class 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QMKYBPDZANOJGF-UHFFFAOYSA-N benzene-1,3,5-tricarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=CC(C(O)=O)=C1 QMKYBPDZANOJGF-UHFFFAOYSA-N 0.000 description 4
- 238000005119 centrifugation Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 4
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000002932 luster Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 4
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 4
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 4
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 3
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
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- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- IQOOXAGHWZGCAZ-UHFFFAOYSA-L copper;hydrazine;oxalate Chemical compound [Cu+2].NN.[O-]C(=O)C([O-])=O IQOOXAGHWZGCAZ-UHFFFAOYSA-L 0.000 description 3
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- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- H01L2224/321—Disposition
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Abstract
Description
また、近年の白色発光LEDの高輝度化により、フルカラー液晶画面のバックライト照明、シーリングライト、またはダウンライト等の照明装置にも広く用いられるようになっている。ところで、白色発光LEDの高輝度化は、発光素子チップの発熱量の増大を招く。これに伴いLEDの構造及びそれに使用する部材にも放熱性の向上が求められている。
現在、銀粒子と比較して安価で、マイグレーション耐性のある銅粒子に注目が集まっている。
<ペースト組成物>
本実施形態のペースト組成物は、(A)厚さ又は短径が10から500nmであり、所定の構造のアミノアルコールによって被覆されている銅微粒子と、(B)有機溶剤と、を含む。
本実施形態において、(A)銅微粒子は、厚さ又は短径が10から500nmであり、化学式(1)で表されるアミノアルコールによって被覆されたものである。このような銅微粒子は、例えば、以下のようにして製造することができる。なお、本明細書において被覆とは、銅微粒子の表面の全部又は一部に上記アミノアルコールが付着していることを意味する。
本実施形態に使用する銅微粒子は、含銅化合物と、アミノアルコールと、還元性化合物と、を有機溶剤中で混合し、該混合により得られた混合物を含銅化合物が熱分解する温度にまで加熱して、銅微粒子を製造することで得られる。
この製造方法により得られる銅微粒子は、アミノアルコールによって表面が被覆されたものとなり、このアミノアルコールが表面を被覆することで、酸化が低減され、所定の特性・性状を有する銅微粒子が得られる。
ここで用いる含銅化合物は、金属銅を析出させ銅微粒子とするための材料である。含銅化合物は、加熱により分解して銅イオンを放出する。この銅イオンが還元されて金属銅となる含銅化合物でもよい。また、この含銅化合物は、加熱により分解して銅イオンと含銅化合物由来の有機物イオンとを放出するものであってもよい。
ここで用いるアミノアルコールは、下記化学式(1)であらわされるアミノ基を有するアルコールである。
ここで用いる還元性化合物は、含銅化合物の分解により生じた銅イオンを還元し、金属銅を遊離させる還元力を有するものであれば、特に限定されない。さらに、還元性化合物は、その沸点が70℃以上でもよい。還元性化合物の沸点は、加熱工程における加熱温度以上であってもよい。さらに、還元性化合物は、炭素、水素及び酸素から構成される後述する(B)有機溶剤に溶解する化合物でもよい。
本実施形態において使用する銅微粒子を製造する際には、上記含銅化合物とアミノアルコールと還元性化合物とを、有機溶剤中で混合してもよい。
ここで用いられる有機溶剤は、上記混合して得られる混合物から生成する錯体等の性質を阻害しない反応溶媒として用いることができるものであれば、特に限定されずに使用できる。有機溶剤は、上記した還元性化合物に対して相溶性を示すアルコールでもよい。
有機溶剤が揮発してしまうと、含銅化合物−アミン化合物錯体の分解による銅イオンの生成及び生成した銅イオンの還元による金属銅の析出を制御しにくくなり、形状の安定性が低減するおそれがある。したがって、有機溶剤はその沸点が70℃以上であり、炭素、水素及び酸素から構成されてもよい。有機溶剤の沸点が70℃以上であると、含銅化合物−アルコールアミン化合物錯体の分解による銅イオンの生成、及び生成した銅イオンの還元による金属銅の析出の制御が容易となり、銅微粒子の形状が安定する。
なお、この有機溶剤には、上記したアミノアルコール、還元性化合物は含まれない。
本実施形態において使用する銅微粒子を製造する際には、さらにその他のアミン化合物を添加してもよい。
その他のアミン化合物としては、以下のアルキルアミン、アルコキシアミンから選ばれる少なくとも1種を含む化合物が挙げられる。このアミン化合物は、含銅化合物と錯体を形成するものであれば特に限定されない。
これらアミン化合物は、含銅化合物を熱分解することで得られる銅微粒子の表面に付着し、銅微粒子の酸化を低減する機能を有する。
なお、アルキルアミンには、以下に説明するアルコキシアミンは含まない。
まず、本開示の銅微粒子の製造方法は、反応容器中に有機溶剤を収容し、該有機溶剤中において、上記説明した、含銅化合物、アミノアルコール、還元性化合物及び必要に応じて有機溶剤、アミン化合物を混合する。この混合の順番は、上記化合物をどのような順番で混合しても構わない。
この混合は、所定の時間間隔をもって反応溶液に含銅化合物と還元性化合物を複数回投入してもよい。このようにして、含銅化合物とアミノアルコール類とを複数回にわたって反応させることで、所望の形状または粒径の銅微粒子を生成することができる。
次の工程では、上記で形成して得られた混合物を十分に加熱して含銅化合物の熱分解反応を進行させる。この加熱により、錯体を形成している含銅化合物は含銅化合物由来の有機物イオンと銅イオンとに分解される。分解された銅イオンは還元性化合物により還元され、金属銅が析出、成長して銅微粒子となる。
これにより、生成する銅微粒子の成長方向が制御でき、多面体形状又はプレート形状の銅微粒子を効率的に得ることも可能である。
また、後述するアミン化合物は、銅微粒子の表面に付着し、成長を制御することで粒子が粗大化するのを防ぐ作用を有している。
本実施形態の銅微粒子は、上記したように含銅化合物と還元剤から形成された錯体がアミノアルコール中で熱分解されて生成した銅原子に、アミノアルコールが配位結合を形成した状態となる。これらの銅原子が凝集することで、アミノアルコール、および含銅化合物由来の有機物イオン種に被覆された銅微粒子が形成されると推察している。
従って、使用する含銅化合物、アミノアルコール、還元剤の種類、反応温度を適宜選択することによって任意の銅微粒子の形状、及びサイズを得ることができる。
このように金属銅の成長方向が制御されると、多面体形状又はプレート形状という特異的な形状の銅微粒子を得ることができる。
このメカニズムは以下の様に推定している。
接合箇所は、半導体素子と基板に挟まれているため、焼結時の加熱により有機溶剤が一部還流状態となる。このため、有機溶剤は、直ちに揮発することなく、暫時接合箇所に留まる。このとき、ペースト組成物の銅粒子中に一部存在している酸化銅、及び接合する基板表面に存在する酸化金属(例えば、酸化銅)は、有機溶剤(例えば、還元剤として機能するアルコール)によって金属(例えば、銅)に還元される。その後、銅粒子は、還元された金属(例えば、銅)と焼結が進行する。これにより、接合箇所のペースト組成物は、導電性が高く、且つ基板との密着性の高い金属結合を形成する。
さらに本実施形態のペースト組成物は、用途に応じて、上記以外の有機溶剤を加えてもよい。
(B)有機溶剤の配合量は、(A)銅微粒子を100質量部としたとき、2〜20質量部であればよく、5〜15質量部でもよい。この範囲にあることで作業性の良好なペースト組成物とすることができる。
本実施形態のペースト組成物は、カルボン酸を配合することにより、接合基材の酸化被膜を除去するだけでなく、接合加熱時の配位子(保護基)交換反応による(A)銅微粒子の被覆層、及びそれに含まれる酸化被膜、酸化銅を除去する。同時に、接合加熱時にカルボン酸が分解もしくは蒸散するため、その後の銅同士の焼結進行の障害とはならない。このことにより本実施形態のペースト組成物は、添加前よりも低温で銅同士の焼結が促進される。
−2−ヒドロキシ酪酸、ジチオジグリコール酸、ジグリコール酸、アセチレンジカルボン酸、マレイン酸、リンゴ酸、2-イソプロピルリンゴ酸、酒石酸、イタコン酸、1,3−
アセトンジカルボン酸、トリカルバリン酸、ムコン酸、β−ヒドロムコン酸、コハク酸、メチルコハク酸、ジメチルコハク酸、グルタル酸、α−ケトグルタル酸、2−メチルグルタル酸、3−メチルグルタル酸、2,2−ジメチルグルタル酸、3,3−ジメチルグルタ
ル酸、2,2−ビス(ヒドロキシメチル)プロピオン酸、クエン酸、アジピン酸、3−tert−ブチルアジピン酸、ピメリン酸、フェニルシュウ酸、フェニル酢酸、ニトロフェニル酢酸、フェノキシ酢酸、ニトロフェノキシ酢酸、フェニルチオ酢酸、ヒドロキシフェニル酢酸、ジヒドロキシフェニル酢酸、マンデル酸、ヒドロキシマンデル酸、ジヒドロキシマンデル酸、1,2,3,4−ブタンテトラカルボン酸、スベリン酸、4,4’−ジチオジ酪酸、桂皮酸、ニトロ桂皮酸、ヒドロキシ桂皮酸、ジヒドロキシ桂皮酸、クマリン酸、フェニルピルビン酸、ヒドロキシフェニルピルビン酸、カフェ酸、ホモフタル酸、トリル酢酸、フェノキシプロピオン酸、ヒドロキシフェニルプロピオン酸、ベンジルオキシ酢酸、フェニル乳酸、トロパ酸、3−(フェニルスルホニル)プロピオン酸、3,3−テトラメチレングルタル酸、5-オキソアゼライン酸、アゼライン酸、フェニルコハク酸、1
,2−フェニレンジ酢酸、1,3−フェニレンジ酢酸、1,4−フェニレンジ酢酸、ベンジルマロン酸、セバシン酸、ドデカン二酸、ウンデカン二酸、ジフェニル酢酸、ベンジル酸、ジシクロヘキシル酢酸、テトラデカン二酸、2,2−ジフェニルプロピオン酸、3,3−ジフェニルプロピオン酸、4,4-ビス(4−ヒドロキシフェニル)吉草酸、ピマール酸、パラストリン酸、イソピマル酸、アビエチン酸、デヒドロアビエチン酸、ネオアビエチン酸、アガト酸などが挙げられる。
−ナフトエ酸、3,5−ジヒドロキシ−2−ナフトエ酸、3,7−ジヒドロキシ−2-ナフトエ酸、2,3−ナフタレンジカルボン酸、2,6−ナフタレンジカルボン酸、2−フェ
ノキシ安息香酸、ビフェニル−4−カルボン酸、ビフェニル−2−カルボン酸、2−ベンゾイル安息香酸などが挙げられる。
(D)成分の配合量が10質量部以下であると、得られたペースト組成物は良好な熱伝導性を発現し、熱放散性に優れる。
さらに、得られたペースト組成物は光及び熱の影響による劣化が少ないため、高寿命の発光装置の接合材料に使用できる。
また、本実施形態のペースト組成物の製造方法は、必要に応じて添加される(C)カルボン酸、(D)熱硬化性樹脂、その他の成分と、を混合した後、さらにディスパース、ニーダー、3本ロールミル、プラネタリーミキサー等により混練処理を行う。
次いで、得られた樹脂組成物は脱泡することにより、ペースト組成物が得られる。
なお、本明細書において、ペースト組成物には、スラリー、インク等の粘度の低いものも包含される。本実施形態のペースト組成物の粘度は、例えば、40〜300Pa・sであり、60〜200Pa・sであってもよい。
本実施形態の半導体装置は、上記したペースト組成物を用いて、半導体素子を素子支持部材となる基板上に接着してなるものである。すなわち、ここでペースト組成物はダイアタッチペーストとして使用される。
この導電パターンを有する基板として使用される基板は、特に制限されない。例えば、有機基板、セラミック基板、ガラス基板などを使用することができる。なかでも、フレキシビリティの観点から、使用される基板はポリイミド、ポリエチレンテレフタレート(PET)、またはポリエチレンナフタレート(PEN)製のフィルムであってもよい。
上記ペースト組成物は、150℃で低抵抗化が可能である。このため、上記ペースト組成物を、配線を形成しようとする基板上に、所望の形状となるよう、直接導電パターンを塗布により描画し、これを加熱して基板上に描画したペースト組成物中の銅微粒子同士を融着させることで、導電パターンを形成することができる。
[参考例1]
クエン酸銅(5mmol)とクエン酸(3.75mmol)、ブチルセロソルブ(3ml)を50mLのサンプル瓶に入れ、アルミブロック式加熱撹拌機中、90℃で5分混合した。これに1−アミノ−2−プロパノール(60mmol)を加え、さらに5分加熱し、銅前駆体溶液とした。この溶液を室温まで冷却した後、1−プロパノール 3mLに溶解させたヒドラジノエタノール(20mmol)を、サンプル瓶の銅前駆体溶液に加え、5分撹拌した。
参考例1の1−アミノ−2−プロパノールを4−アミノ−1−ブタノール(30mmol)に置き換え、さらにオクチルアミン(30mmol)を加えた以外は参考例1と同じ基質、および操作によって固体物を得た。その遠心分離した固体物を減圧乾燥すると、銅光沢をもつ粉体状の銅微粒子2(収量 0.62g、収率 94.5%)が得られた。銅微粒子2は、4−アミノ−1−ブタノールによって、その表面が被覆されていた。
亜酸化銅(8.75mmmol)、1−プロパノール(5mL)を50mLのサンプル瓶に入れ、アルミブロック式加熱撹拌機中、90℃で5分混合した。これに4−アミノ−1−ブタノール(30mmol)、オクチルアミン(30mmol)を加え、さらに5分加熱し、銅前駆体溶液とした。この溶液を室温まで冷却した後、1−プロパノール 3mLに溶解させたヒドラジン一水和物(20mmol)を、サンプル瓶の銅前駆体溶液に加え、5分撹拌した。
室温でヒドラジン一水和物(13.2mmol)と反応媒としてのメタノール5mLを予め混合した混合溶液に、シュウ酸銅(3.33mmol)を投入して10分間撹拌し、シュウ酸銅・ヒドラジン錯体(複合化合物)を生成させた。
[酸化度]
銅微粒子の酸化度は、X線回折(XRD)により、Cu、CuO、Cu2Oの各成分の最強線ピークの積分強度比からRIR(参照強度比)法により含有量の定量を行い、次の式(I)により算出した。
銅微粒子の粒子径は、得られた固体生成物を、走査電子顕微鏡(日本電子株式会社製、商品名:JSM−7600F;SEM)の観察画像に基づく任意に選択した10個の銅微粒子(n=10)の平均値とした。このとき、長径、短径及び厚さも同じ方法で算出できる。
銅微粒子の粒子形状は、走査電子顕微鏡(日本電子株式会社製、商品名:JSM−7600F;SEM)で観察した。
銅微粒子のアウトガス量は、得られた銅微粒子の乾粉を用いて、示差熱−熱重量同時測定(TG−DTA)により40から500℃まで、昇温速度10℃/minにて測定し、測定前後の質量減少分をアウトガス量(%)とした。
ペースト組成物は、表2の配合(質量部)に従って各成分を混合し、ロールで混練した。得られたペースト組成物は、以下の方法で評価した。評価結果は表2に併せて示す。なお、実施例1〜4及び比較例1で用いた材料は、銅微粒子以外、市販品を使用した。
(A1):参考例1で得られた銅微粒子1
(A2):参考例2で得られた銅微粒子2
(A3):参考例3で得られた銅微粒子3
[その他の銅微粒子]
(CA1):参考例4で得られた銅微粒子4
(B1):ジエチレングリコール(東京化成工業(株)製)
[(C)カルボン酸]
(C1):グルタル酸無水物(和光純薬工業株式会社製)
[(D)熱硬化性樹脂]
(D1):ビスフェノールA型エポキシ樹脂(三菱化学工業(株)製、商品名:jER828)
硬化促進始剤:イミダゾール(四国化成工業(株)製、商品名:2E4MZ)
[粘度]
ペースト組成物の粘度は、E型粘度計(3°コーン)を用いて、25℃、5rpmでの値を測定した。
[ポットライフ] 25℃の恒温槽内に樹脂ペーストを放置した時の粘度が初期粘度の1.5倍以上増粘するまでの日数を測定した。
熱伝導率は、175℃×30分で硬化させたペースト組成物をJIS R 1611−1997に従い、レーザーフラッシュ法により測定した。
試験片は、ガラス基板(厚み1mm)にスクリーン印刷法によりペースト組成物を厚み200μmとなるように塗布し、175℃、200℃、225℃、60分で硬化した。電気抵抗は、硬化したペースト組成物を高精度高機能抵抗率計「MCP−T600」(製品名、三菱化学(株)製)を用いて4端子法にて測定した。
試験片は、4mm×4mmの接合面に金蒸着層を設けた裏面金チップを、ペースト組成物を用いて、無垢の銅フレーム及びPPF(Ni−Pd/Auめっきした銅フレーム)にマウントし、200℃、60分で硬化した。チップをフレームにマウントした試験片は、85℃、相対湿度85%、72時間の条件で吸湿処理した。
ペースト組成物の熱時接着強度は、マウント強度測定装置を用いて、260℃におけるチップとフレーム間の熱時ダイシェア強度を測定して求めた。
試験片は、4mm×4mmの接合面に金蒸着層を設けた裏面金チップを、半導体用ペースト組成物を用いて、PPF(Ni−Pd/Auめっきした銅フレーム)にマウントして、200℃、60分で硬化して、接合した。
ペースト組成物の高温熱処理後の熱時接着強度は、250℃で100時間及び1000時間の加熱処理を行った後、マウント強度測定装置を用い、260℃での熱時ダイシェア強度を測定した。
ペースト組成物の冷熱サイクル処理による高温熱処理後の熱時接着強度は、−40℃から250℃まで昇温し、また−40℃に冷却する操作を1サイクルとし、これを100サイクル及び1000サイクル処理した後、マウント強度測定装置を用い、260℃での熱時ダイシェア強度を測定した。
試験片は、6mm×6mmの接合面に金蒸着層を設けた裏面金シリコンチップを、ペースト組成物を用いて銅フレーム及びPPFにマウントした。上記シリコンチップの銅フレーム及びPPFへの接合において、ペーストの硬化条件は、ホットプレート上で、200℃、60秒間の加熱硬化(HP硬化)又はオーブンを使用し、200℃、60分の加熱硬化(OV硬化)を行った。上記フレームにマウントしたシリコンチップは、京セラ(株)製エポキシ封止材(商品名:KE−G3000D)を用い、下記の条件で樹脂封止してパッケージを得た。耐冷熱衝撃性試験は、上記樹脂封止したパッケージを85℃、相対湿度85%、168時間吸湿処理した後、IRリフロー処理(260℃、10秒)及び冷熱サイクル処理(−55℃から150℃まで昇温し、また−55℃に冷却する操作を1サイクルとし、これを1000サイクル)を行い、各処理後それぞれのパッケージの内部クラックの発生数を超音波顕微鏡で観察することで評価した。耐冷熱衝撃性の評価結果は、5個のサンプルについてクラックの発生したサンプル数を表示した。
・パッケージタイプ:80pQFP(14mm×20mm×2mm厚さ)
・チップ概要:シリコンチップ及び裏面金メッキチップ
・リードフレーム:PPF及び銅
・エポキシ封止材による成形:175℃、2分間
・ポストモールドキュアー:175℃、8時間
ペースト組成物のボイド率は、マイクロフォーカスX線検査装置(SMX−1000、島津製作所社製)を用いて観察した。ボイド率の評価基準は、発生率5%未満を「良」、5%以上8%未満を「可」、8%以上を「不可」として判定した。尚、上記ボイド率は、X線透過装置によりはんだ接合部を接合面に対し垂直方向から観察し、ボイド面積と接合部面積を求め、下式により算出した。
ボイド率(%)=ボイド面積÷(ボイド面積+接合部面積)×100
さらに、無水カルボン酸を含むことにより、良好な焼結状態が得られることから、熱伝導率が良好なペースト組成物が得られることが分かった。
Claims (8)
- 前記(A)銅微粒子が、多面体形状又はプレート形状であることを特徴とする請求項1に記載のペースト組成物。
- 前記(B)有機溶剤が、還元剤として機能するアルコール(ヒドロキシ化合物)であることを特徴とする請求項1乃至3のいずれか1項に記載のペースト組成物。
- さらに(C)カルボン酸を含有することを特徴とする請求項1乃至4のいずれか1項に記載のペースト組成物。
- 基板と、
前記基板上に、請求項1乃至5のいずれか1項記載のペースト組成物をを含むダイアタッチ材料の硬化物を介して接着された半導体素子と、を有することを特徴とする半導体装置。 - 前記半導体素子が、発光素子であることを特徴とする請求項6記載の半導体装置。
- 発熱部品と、
前記発熱部品に、請求項1乃至5のいずれか1項記載のペースト組成物を含む放熱部材接着用材料の硬化物を介して接着された放熱部材と、を有することを特徴とする電気・電子機器。
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JP7162164B1 (ja) | 2021-05-07 | 2022-10-28 | 福建晶▲しい▼新材料科技有限公司 | 半導体電熱膜の前駆体溶液、半導体電熱膜構造、及び電熱構造の製造方法 |
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