JPWO2019017034A1 - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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Abstract
Description
ここでは、半導体装置として、IGBTを備えた半導体装置を例に挙げて説明する。まず、本明細書および図面において、「n」が記載された領域では、電子が多数キャリアであることを意味する。「p」が記載された領域では、ホールが多数キャリアであることを意味する。また、「n」または「p」に、「+」または「−」が付されている。「+」は、キャリア濃度が比較的高い場合を表す。「−」は、キャリア濃度が比較的低い場合を表す。
実施の形態2では、実施の形態1に係る半導体装置の製造方法の他の例について説明する。ここでは、荷電粒子としてヘリウムイオンを用いた製造方法について説明する。
ここでは、半導体装置として、ダイオードを備えた半導体装置を例に挙げて説明する。また、その製造方法として、荷電粒子としてプロトンを照射する場合について説明する。図14に示すように、ダイオード2bを備えた半導体装置1では、半導体基板3の第1主面から一定の深さにわたり、p+型アノード層31が形成されている。p+型アノード層31に接するように、アノード電極33が形成されている。
実施の形態4では、実施の形態3に係る半導体装置の製造方法の他の例について説明する。ここでは、荷電粒子としてヘリウムイオンを用いた製造方法について説明する。
Claims (13)
- 第1主面および第2主面を有し、第1キャリア濃度を有する第1導電型の半導体基板に対して、前記第1主面と前記第2主面との間において電流の導通を行う半導体素子を形成する工程を有し、
前記半導体素子を形成する工程は、
前記半導体基板の前記第2主面から、アクセプタイオンを注入する工程と、
前記アクセプタイオンが注入された前記半導体基板の領域内に水素原子を蓄積させるウェット処理を、前記半導体基板の前記第2主面から行う工程と、
前記半導体基板の前記第2主面から、荷電粒子を照射する工程と、
前記ウェット処理を行う工程および前記荷電粒子を照射する工程の後に、前記半導体基板にアニール処理を行うことにより、前記半導体基板の前記第1キャリア濃度よりも高い第2キャリア濃度を有する第1導電型のフィールドストップ層を形成する工程と
を備えた、半導体装置の製造方法。 - 前記アクセプタイオンを注入する工程では、前記アクセプタイオンとして第13族元素のイオンが注入される、請求項1記載の半導体装置の製造方法。
- 前記ウェット処理を行う工程では、フッ酸を含む薬液が使用される、請求項1記載の半導体装置の製造方法。
- 前記荷電粒子を照射する工程では、ドーズ量が5×1011/cm2〜1×1015/cm2の条件のもとで、前記荷電粒子としてプロトンが照射される、請求項1記載の半導体装置の製造方法。
- 前記荷電粒子を照射する工程では、ドーズ量が5×1010/cm2〜1×1014/cm2の条件のもとで、前記荷電粒子としてヘリウムイオンが照射される、請求項1記載の半導体装置の製造方法。
- 前記アニール処理を行う工程では、不活性ガス雰囲気中において、アニール温度が300℃〜500℃、アニール時間が0.5時間〜5時間の条件のもとで行われる、請求項1記載の半導体装置の製造方法。
- 前記半導体素子を形成する工程は、前記半導体基板の前記第2主面から前記フィールドストップ層までの領域に第2導電型のコレクタ層を形成する工程を含む、IGBTを形成する工程を有する、請求項1記載の半導体装置の製造方法。
- 前記半導体素子を形成する工程は、前記半導体基板の前記第2主面からドナーイオンを注入することにより、前記半導体基板の前記第2主面から前記フィールドストップ層までの領域に第1導電型のカソード層を形成する工程を含む、ダイオードを形成する工程を有する、請求項1記載の半導体装置の製造方法。
- 第1導電型の半導体基板における第1主面と第2主面との間において電流の導通を行う半導体素子を備えた半導体装置であって、
第1キャリア濃度を有する前記半導体基板の前記第2主面から第1深さにわたり形成された不純物領域と、
前記半導体基板における前記第1深さの位置から前記第1深さよりも深い第2深さにわたり形成され、前記半導体基板の前記第1キャリア濃度よりも高い第2キャリア濃度を有する第1導電型のフィールドストップ層と
を備え、
前記フィールドストップ層では、
前記第1深さと前記第2深さとの間に前記第2キャリア濃度の最大値があり、
前記第2キャリア濃度の前記最大値が位置する部分から前記第2主面へ向かって、前記第2キャリア濃度は低下する分布を示し、
前記フィールドストップ層に残留する照射欠陥の濃度は、前記半導体基板の前記第1キャリア濃度よりも低く、
前記不純物領域内に水素原子が蓄積された、半導体装置。 - 前記フィールドストップ層に残留する前記照射欠陥の濃度は、前記半導体基板の前記第1キャリア濃度の1/100以下である、請求項9記載の半導体装置。
- 前記水素原子は、前記水素原子の濃度が、前記不純物領域の表面から前記不純物領域と前記フィールドストップ層との境界に向かって連続的に低下する分布を有する、請求項9記載の半導体装置。
- 前記半導体素子は、IGBTを含み、
前記不純物領域は、第2導電型のコレクタ層である、請求項9記載の半導体装置。 - 前記半導体素子は、ダイオードを含み、
前記不純物領域は、第1導電型のカソード層である、請求項9記載の半導体装置。
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