JPWO2018230136A1 - 窒化物半導体装置及びその製造方法 - Google Patents
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Abstract
Description
2 バッファ層
3 第1の窒化物半導体層
4 第2の窒化物半導体層
5 p型の第3の窒化物半導体層
6 高抵抗領域
7 ゲート電極
8 2次元電子ガス層
9 ソース電極
10 ドレイン電極
11 リセス
12 第4の窒化物半導体層
13 ウェル層
14、15 レジストパターン
16 ゲート絶縁膜
17 p型の高抵抗領域
100〜105、901〜903 窒化物半導体装置
Claims (17)
- 基板と、
前記基板の上に形成された第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に形成され、前記第1の窒化物半導体層と比べてバンドギャップが大きい第2の窒化物半導体層と、
前記第2の窒化物半導体層の上に選択的に形成され、p型の第1の不純物を含む第3の窒化物半導体層と、
前記第3の窒化物半導体層に形成され、第2の不純物を含み、前記第3の窒化物半導体層の比抵抗よりも高い比抵抗を有す高抵抗領域と、
前記高抵抗領域の上に形成されたゲート電極と、を有し、
前記高抵抗領域の端部が、前記第3の窒化物半導体層表面端の内側にある
窒化物半導体装置。 - 前記ゲート電極と前記高抵抗領域とは接している、
請求項1に記載の窒化物半導体装置。 - 前記ゲート電極の幅は前記高抵抗領域の幅よりも狭い、
請求項2に記載の窒化物半導体装置。 - 前記ゲート電極の幅は前記高抵抗領域の幅と同じである、
請求項2に記載の窒化物半導体装置。 - 前記ゲート電極の幅は前記高抵抗領域の幅よりも広い、
請求項2に記載の窒化物半導体装置。 - 前記窒化物半導体装置のゲート幅あたりのゲート・ソース間の順方向電流が100μA/mmとなるゲート・ソース間電圧が7V以上である、
請求項1から5のいずれか1項に記載の窒化物半導体装置。 - 前記高抵抗領域と前記ゲート電極の接触抵抗は200Ωmm以上である、
請求項1から6のいずれか1項に記載の窒化物半導体装置。 - 前記高抵抗領域中の前記第2の不純物のピーク濃度は2×1018cm−3以上である、
請求項1から7のいずれか1項に記載の窒化物半導体装置。 - 前記p型の第3の窒化物半導体層中の前記第2の不純物の平均濃度が1×1017cm−3以上である、
請求項1から8のいずれか1項に記載の窒化物半導体装置。 - 前記高抵抗領域の厚さは20nm以上である、
請求項1から9のいずれか1項に記載の窒化物半導体装置。 - 前記高抵抗領域の厚さは20nm以上であり、前記高抵抗領域中の前記第2の不純物のピーク濃度は2×1018cm−3以上である、
請求項1から10のいずれか1項に記載の窒化物半導体装置。 - 前記高抵抗領域の厚さは、前記第3の窒化物半導体層の最大厚よりも薄い、
請求項1から11のいずれか1項に記載の窒化物半導体装置。 - 前記高抵抗領域の下端は、前記第3の窒化物半導体層の下端よりも10nm以上上方である、
請求項1から12のいずれか1項に記載の窒化物半導体装置。 - 前記第2の不純物は、F、B、Ar、He、Fe、Cr、Zn、Ca、Tiの少なくとも一つである
請求項1から13のいずれか1項に記載の窒化物半導体装置。 - 前記ゲート電極は、p型の第3の窒化物半導体に対してオーミック接触する材料を用いる、
請求項1から14のいずれか1項に記載の窒化物半導体装置。 - 前記ゲート電極は、Ni、Pt、Pd、Au、Ti、Cr、In、Snの内少なくとも一つの元素を含む、
請求項15に記載の窒化物半導体装置。 - 基板を用意し、
前記基板の上に第1の窒化物半導体層を形成する工程と、
前記第1の窒化物半導体層の上に、前記第1の窒化物半導体層と比べてバンドギャップが大きい第2の窒化物半導体層を形成する工程と、
前記第2の窒化物半導体層の上に、p型の第1の不純物を含む第3の窒化物半導体層を選択的に形成する工程と、
前記第3の窒化物半導体層の一部に第2の不純物をイオン注入し、前記第3の窒化物半導体層の比抵抗よりも高い比抵抗を有す高抵抗領域を形成する工程と、
前記高抵抗領域の上にゲート電極を形成する工程と、
を含む窒化物半導体装置の製造方法。
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