JPWO2018203466A1 - 窒化物系発光装置 - Google Patents
窒化物系発光装置 Download PDFInfo
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- JPWO2018203466A1 JPWO2018203466A1 JP2019515690A JP2019515690A JPWO2018203466A1 JP WO2018203466 A1 JPWO2018203466 A1 JP WO2018203466A1 JP 2019515690 A JP2019515690 A JP 2019515690A JP 2019515690 A JP2019515690 A JP 2019515690A JP WO2018203466 A1 JPWO2018203466 A1 JP WO2018203466A1
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Abstract
Description
本開示の実施の形態を説明する前に、本開示の基礎となった知見について説明する。
実施の形態1に係る窒化物系発光装置について説明する。まず、実施の形態1に係る窒化物系発光装置において用いられる窒化物系半導体発光素子の一例である半導体レーザ素子11について、図面を用いて説明する。
実施の形態2に係る半導体レーザ素子について説明する。実施の形態2に係る半導体レーザ素子は、GaN基板101と第1クラッド層103との間にバッファ層を備える点において、実施の形態1に係る半導体レーザ素子11と相違し、その他の点において一致する。以下、実施の形態2に係る半導体レーザ素子について、実施の形態1に係る半導体レーザ素子11との相違点を中心に図面を用いて説明する。
実施の形態3に係る半導体レーザ素子について説明する。実施の形態3に係る半導体レーザ素子は、第3光ガイド層および第3クラッド層を備える点において、実施の形態1に係る半導体レーザ素子11と相違し、その他の点において一致する。以下、実施の形態3に係る半導体レーザ素子について、実施の形態1に係る半導体レーザ素子11との相違点を中心に図面を用いて説明する。
実施の形態4に係る半導体レーザ素子について説明する。実施の形態4に係る半導体レーザ素子は、リッジの下端部が第3光ガイド層の成長膜厚方向内に配置されている点において、実施の形態3に係る半導体レーザ素子13と相違し、その他の点において一致する。以下、実施の形態4に係る半導体レーザ素子について、実施の形態3に係る半導体レーザ素子13との相違点を中心に図面を用いて説明する。
実施の形態5に係る半導体レーザ素子について説明する。実施の形態5に係る半導体レーザ素子は、バッファ層を備える点において、実施の形態3に係る半導体レーザ素子13と相違し、その他の点において一致する。以下、実施の形態5に係る半導体レーザ素子について、実施の形態3に係る半導体レーザ素子13との相違点を中心に図面を用いて説明する。
実施の形態6に係る半導体レーザ素子について説明する。実施の形態6に係る半導体レーザ素子は、バッファ層を備える点において、実施の形態4に係る半導体レーザ素子14と相違し、その他の点において一致する。以下、実施の形態6に係る半導体レーザ素子について、実施の形態4に係る半導体レーザ素子14との相違点を中心に図面を用いて説明する。
実施の形態7に係る半導体レーザ素子について説明する。以上で説明した各実施の形態に係る半導体レーザ素子においては、(0001)C面のGaN基板上に多層構造を作製した構成を採用している。このようにC面上に窒化物層を形成した場合、格子不整の存在するヘテロ界面にはピエゾ分極電荷が発生し、GaN基板の主面に対する法線方向に、例えば図2のグラフ(c)に示すようにC軸方向((0001)方向)のピエゾ電界が発生し動作電圧の増大をもたらす。このようなC軸方向のピエゾ電界の発生を抑制し、動作電圧の低減を図るために、実施の形態7に係る半導体レーザ素子は、GaN{11−22}面からなる半極性面上に多層構造を作製している。以下、実施の形態7に係る半導体レーザ素子について図面を用いて説明する。
実施の形態8に係る半導体レーザ素子について説明する。実施の形態7において述べたようなC軸方向のピエゾ電界の発生を抑制し、動作電圧の低減を図るために、実施の形態8に係る半導体レーザ素子は、GaN{10−10}面(M面)からなる無極性面上に多層構造を作製している点において、上記の各実施の形態に係る半導体レーザ素子と相違する。以下、実施の形態8に係る半導体レーザ素子について、上記各実施の形態に係る半導体レーザ素子との相違点を中心に、図面を用いて説明する。
実施の形態9について説明する。実施の形態9では、実施の形態1に係る半導体レーザ素子11をサブマウント基板122に実装する形態について説明する。
実施の形態10に係る半導体レーザ装置について説明する。
実施の形態11に係る光モジュールについて説明する。
実施の形態12に係る光モジュールについて説明する。実施の形態12に係る光モジュールは、光ファイバーを備える点において、実施の形態11に係る光モジュール240と相違し、その他の点において一致する。以下、実施の形態12に係る光モジュールについて図面を用いて説明する。
実施の形態13に係る光源について説明する。実施の形態13に係る光源は、半導体レーザ素子から出射される青色レーザ光を白色光に変換して出射する光源である。以下、実施の形態13に係る光源について、図面を用いて説明する。
51a、51b、59、60a、60b、60c、60d 半導体レーザ装置
101、140、141、401 GaN基板
102 バッファ層
102a InGaN層
102b AlGaN層
103、163 第1クラッド層
104 N型GaN層
105 第1光ガイド層
106、166 量子井戸活性層
106a、106c、106e バリア層
106b、106d 量子井戸層
107 第2光ガイド層
108、168 電子障壁層
109、169 第2クラッド層
110 コンタクト層
112 電流ブロック層
113 P側オーミック電極
114、114a P側第1密着層
115 第1バリア層
116、116a パッド電極
117 N側電極
118、118a P側多層電極
121 接合層
122、311、410 サブマウント基板
130 第3光ガイド層
131 第3クラッド層
201 第1パッド電極
202、202a 第2バリア層
203 第2パッド電極
205 サブマウントバリア層
206 上部密着金属層
207 下部密着金属層
210 電流非注入窓領域
220 金属基台
221 CANパッケージ
224 管
226 光ファイバー
227 レンズ
228 反射ミラー
229 台座
230 蛍光体
240 光モジュール
250 光源
300、400 半導体発光装置
310 窒化物発光素子
402 発光素子
Claims (17)
- AlxGa1−xN(0≦x≦1)基板の上に、前記AlxGa1−xN基板側から順に第1導電型の第1クラッド層、第1光ガイド層、量子井戸活性層、第2光ガイド層、及び、第2導電型の第2クラッド層が積層された多層構造を有する窒化物系半導体発光素子と、
前記窒化物系半導体発光素子が実装されるサブマウント基板とを備え、
前記窒化物系半導体発光素子は、前記多層構造と前記サブマウント基板とが対向するように前記サブマウント基板に実装されており、
前記サブマウント基板は、ダイヤモンドで形成されており、
前記窒化物系半導体発光素子には、前記AlxGa1−xN基板側に凹型の反りが形成されている
窒化物系発光装置。 - 前記AlxGa1−xN基板は、GaN基板である
請求項1記載の窒化物系発光装置。 - 前記多層構造は、前記AlxGa1−xN基板に対して圧縮性の平均歪みを有する
請求項1又は2記載の窒化物系発光装置。 - 前記第1光ガイド層及び前記第2光ガイド層の少なくとも一方はInを含む
請求項1〜3のいずれか1項記載の窒化物系発光装置。 - 前記第1光ガイド層及び第2光ガイド層のIn組成は各々6%以下である
請求項4記載の窒化物系発光装置。 - 前記AlxGa1−xN基板と前記第1クラッド層との間に、前記AlxGa1−xN基板に対して圧縮性の平均歪みを有する窒化物半導体層を含むバッファ層をさらに備えている
請求項1〜5のいずれか1項記載の窒化物系発光装置。 - 前記バッファ層は、Inを含む
請求項6記載の窒化物系発光装置。 - 前記バッファ層は、AlGaN層をさらに含む
請求項6又は7記載の窒化物系発光装置。 - 前記量子井戸活性層は量子井戸層とバリア層とからなり、前記バリア層のIn組成は、前記第1光ガイド層及び前記第2光ガイド層のIn組成以上である
請求項4又は5記載の窒化物系発光装置。 - 前記第2クラッド層にはリッジが形成されている
請求項1〜9のいずれか1項記載の窒化物系発光装置。 - 前記リッジの前記第2光ガイド層側にInを含む層、又は、GaNからなる層を備える
請求項10記載の窒化物系発光装置。 - 前記GaN基板は無極性、又は半極性の面方位を有し、
前記多層構造におけるAl組成は1%以下である
請求項2記載の窒化物系発光装置。 - 前記多層構造は、Alを含まない
請求項12記載の窒化物系発光装置。 - 前記多層構造と前記サブマウント基板との間に、前記第2クラッド層側から順に、第1バリア層、第1パッド電極層、第2バリア層、及び、接合層を備え、
前記第2バリア層の短辺方向の幅は、前記第1バリア層の短辺方向の幅より狭い
請求項1〜13のいずれか1項記載の窒化物系発光装置。 - 前記多層構造と前記サブマウント基板の間に、前記第2クラッド層側から、第1バリア層、第1パッド電極層、第2バリア層、及び、接合層を備え、
前記接合層は、前記第2バリア層と前記第1バリア層との間であって、前記第2バリア層の端部より内側に入りこんでいる
請求項1〜10のいずれか1項記載の窒化物系発光装置。 - AlxGa1−xN(0≦x≦1)基板の上に、前記AlxGa1−xN基板側から順に第1導電型の第1クラッド層、第1光ガイド層、量子井戸活性層、第2光ガイド層、及び、第2導電型の第2クラッド層が積層された多層構造を有する窒化物系半導体発光素子と、
前記窒化物系半導体発光素子が実装されるサブマウント基板とを備え、
前記多層構造は、前記AlxGa1−xN基板に対して圧縮性の平均歪みを有し、
前記窒化物系半導体発光素子は、前記多層構造と前記サブマウント基板とが対向するように前記サブマウント基板に実装されており、
前記サブマウント基板は、ダイヤモンドで形成されている
窒化物系発光装置。 - AlxGa1−xN(0≦x≦1)基板の上に、前記AlxGa1−xN基板側から順に第1導電型の第一クラッド層、第1光ガイド層、量子井戸活性層、第2光ガイド層、及び、第2導電型の第2クラッド層が積層された多層構造を有する窒化物系半導体発光素子と、
前記窒化物系半導体発光素子が実装されるサブマウント基板とを備え、
前記多層構造は、前記AlxGa1−xN基板に対して5.2×10−4以下の引っ張り性、又は、圧縮性の平均歪みを有し、
前記AlxGa1−xN基板の厚さは75μm以上、95μm以下であって、
前記窒化物系半導体発光素子は、前記多層構造と前記サブマウント基板とが対向するように前記サブマウント基板に実装されており、
前記サブマウント基板は、ダイヤモンドで形成されている
窒化物系発光装置。
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US20200067267A1 (en) | 2020-02-27 |
JP7478205B2 (ja) | 2024-05-02 |
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US11322908B2 (en) | 2022-05-03 |
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JP7150705B2 (ja) | 2022-10-11 |
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