JPWO2018151313A1 - 焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法 - Google Patents
焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法 Download PDFInfo
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- JPWO2018151313A1 JPWO2018151313A1 JP2018511770A JP2018511770A JPWO2018151313A1 JP WO2018151313 A1 JPWO2018151313 A1 JP WO2018151313A1 JP 2018511770 A JP2018511770 A JP 2018511770A JP 2018511770 A JP2018511770 A JP 2018511770A JP WO2018151313 A1 JPWO2018151313 A1 JP WO2018151313A1
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- sintered material
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- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/058—Mixtures of metal powder with non-metallic powder by reaction sintering (i.e. gasless reaction starting from a mixture of solid metal compounds)
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Abstract
Description
項1.焼結材料において、
基部と、緩衝部と、充填部とを備え、
前記基部は、金属の焼結体であり、
前記緩衝部及び充填部は、前記基部中に分散して存在しており、
前記緩衝部は、空孔、及び、前記焼結体と同一でない材料の少なくともいずれか一方により形成され、
前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
前記焼結材料の三次元画像における前記基部の体積分布の尖度をA、前記充填部を除去した前記焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、焼結材料。
項2.焼結材料において、
基部と、緩衝部と、充填部とを備え、
前記基部は、金属の焼結体であり、
前記緩衝部及び充填部は、前記基部中に分散して存在しており、
前記緩衝部は、空孔、及び、前記焼結体とは同一でない材料の少なくともいずれか一方により形成され、
前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
前記焼結材料の三次元画像における前記基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、焼結材料。
項3.A−Bの値が0.1以上である、項1に記載の焼結材料。
項4.前記充填部の含有量が0.01重量%以上10重量%以下である、項1〜3のいずれか1項に記載の焼結材料。
項5.前記充填部どうしの最近接距離が1μm以上10μm以下である、項1〜4のいずれか1項に記載の焼結材料。
項6.前記基部は、一次元方向に配向性を有するように分布して存在している、項1〜5のいずれか1項に記載の焼結材料。
項7.項1〜6のいずれか1項に記載の焼結材料を接続部に有する接続構造体。
項8.項1〜7のいずれか1項に記載の焼結材料の充填部を形成するために用いられ、 基材粒子にコロイド触媒又は焼結促進剤が配置された構造、若しくは、基材粒子に金属部が被覆された構造を有する、複合粒子。
項9.基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、
前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をA、前記複合体を除去した接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、接合用組成物。
項10.基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、
前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、接合用組成物。
項11.項9又は10に記載の接合用組成物を焼結する工程を含む、焼結材料の製造方法。
CV値(%)=(ρ/Dn)×100
ρ:粒子の粒子径の標準偏差
Dn:粒子の粒子径の平均値である。
10%K値(N/mm2)=(3/21/2)・F・S−3/2・R−1/2
F:粒子が10%圧縮変形したときの荷重値(N)
S:粒子が10%圧縮変形したときの圧縮変位(mm)
R:粒子の半径(mm)
微小圧縮試験機は、フィッシャー社製「フィッシャースコープH−100」等が用いられる。なお、30%K値を求める場合も、粒子を30%圧縮変形させたときの上記各パラメータを求めることで算出できる。
(1)基材粒子の分散液中に、金属微粒子を添加し、前記基材粒子の表面に前記金属微粒子をファンデルワールス力により集積させ、付着させる方法。
(2)基材粒子を入れた容器に、金属微粒子を添加し、容器の回転等による機械的な作用により前記基材粒子の表面に前記金属微粒子を付着させる方法。
(3)基材粒子の分散液中に、金属ナノコロイドを添加し、前記基材粒子の表面に前記金属ナノコロイドを化学結合により集積させた後、還元剤により金属ナノコロイドを還元して金属化させることにより基材粒子の表面に金属微粒子を付着させる方法。
中でも、付着させる金属微粒子の量を制御しやすいという観点から、前記(1)の方法が好ましい。なお、基材粒子以外の基材であっても前記(1)〜(3)の方法を採用することができる。
基材粒子として、粒子径が3.0μmであるジビニルベンゼン共重合体樹脂粒子(積水化学工業社製「ミクロパールSP−203」)を用意した。
熱応力の緩和作用及び接合強度は、JIS Z 3198−7:鉛フリーはんだ試験方法−第7部 チップ部品のはんだ継手せん断 試験方法」に記載の「はんだ継手せん断試験方法」に基づいて評価した。
第1の原料である銀ペーストを0.99gに、前記複合粒子Aを0.01gに変更したこと以外は実施例1と同様の方法で接合用組成物を調製した。複合粒子の含有量は1重量%であった。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
第1の原料である銀ペーストを0.90gに、前記複合粒子Aを0.10gに変更したこと以外は実施例1と同様の方法で接合用組成物を調製した。複合粒子の含有量は10重量%であった。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
第1の原料である銀ペーストを、京セラケミカル社製の樹脂入り銀ペースト「CT2700」0.98gに変更したこと以外は実施例1と同様の方法で接合用組成物を調製した。複合粒子の含有量は2重量%であった。得られた接合用組成物を、厚さ1mmのCu基板上に100μmの厚さになるようスクリーン塗布し、その表面を、厚さ1mmのCu基板で挟み込んだ。この挟み込んだ接合用組成物を200℃で90分間、加熱することで焼結材料を得た。この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
複合粒子Aの代わりに、繊維として「L−MWNT−4060(NTP社製)」を0.02g使用したこと以外は実施例1と同様の方法で接合用組成物を調製した。繊維の含有量は2重量%であった。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
第1の原料である銀ペースト(日本スペリア社製「アルコナノ銀ペーストANP−1」)のみを接合用組成物とした。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
第1の原料である銀ペースト(京セラケミカル社製「CT2700」)のみを接合用組成物とした。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
2:緩衝部
3:充填部
Claims (11)
- 焼結材料において、
基部と、緩衝部と、充填部とを備え、
前記基部は、金属の焼結体であり、
前記緩衝部及び充填部は、前記基部中に分散して存在しており、
前記緩衝部は、空孔、及び、前記焼結体と同一でない材料の少なくともいずれか一方により形成され、
前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
前記焼結材料の三次元画像における前記基部の体積分布の尖度をA、前記充填部を除去した前記焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、焼結材料。 - 焼結材料において、
基部と、緩衝部と、充填部とを備え、
前記基部は、金属の焼結体であり、
前記緩衝部及び充填部は、前記基部中に分散して存在しており、
前記緩衝部は、空孔、及び、前記焼結体とは同一でない材料の少なくともいずれか一方により形成され、
前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
前記焼結材料の三次元画像における前記基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、焼結材料。 - A−Bの値が0.1以上である、請求項1に記載の焼結材料。
- 前記充填部の含有量が0.01重量%以上10重量%以下である、請求項1〜3のいずれか1項に記載の焼結材料。
- 前記充填部どうしの最近接距離が1μm以上10μm以下である、請求項1〜4のいずれか1項に記載の焼結材料。
- 前記基部は、一次元方向に配向性を有するように分布して存在している、請求項1〜5のいずれか1項に記載の焼結材料。
- 請求項1〜6のいずれか1項に記載の焼結材料を接続部に有する接続構造体。
- 請求項1〜7のいずれか1項に記載の焼結材料の充填部を形成するために用いられ、 基材粒子にコロイド触媒又は焼結促進剤が配置された構造、若しくは、基材粒子に金属部が被覆された構造を有する、複合粒子。
- 基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、 前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をA、前記複合体を除去した接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、接合用組成物。
- 基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、 前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、接合用組成物。
- 請求項9又は10に記載の接合用組成物を焼結する工程を含む、焼結材料の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000241095A (ja) * | 1999-02-19 | 2000-09-08 | Techno Quest:Kk | 熱伝達材料、放熱材、放熱方法及び電気電子デバイス |
JP2004076043A (ja) * | 2002-08-12 | 2004-03-11 | Sumitomo Electric Ind Ltd | セラミックス−金属系複合材料及びその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000241059A (ja) * | 1999-02-18 | 2000-09-08 | Japan Steel Works Ltd:The | 冷却装置 |
KR100719802B1 (ko) * | 2005-12-28 | 2007-05-18 | 제일모직주식회사 | 이방 전도 접속용 고신뢰성 전도성 미립자 |
JP5123633B2 (ja) | 2007-10-10 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 半導体装置および接続材料 |
US20090252637A1 (en) * | 2007-12-03 | 2009-10-08 | Energy & Environmental Research Center Foundation | Joining of difficult-to-weld materials and sintering of powders using a low-temperature vaporization material |
DE102009000192A1 (de) | 2009-01-14 | 2010-07-15 | Robert Bosch Gmbh | Sinterwerkstoff, Sinterverbindung sowie Verfahren zum Herstellen eines Sinterverbindung |
JP5611537B2 (ja) | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
JP2011060502A (ja) * | 2009-09-08 | 2011-03-24 | Sekisui Chem Co Ltd | 絶縁粒子付き導電性粒子、異方性導電材料及び接続構造体 |
JP5449958B2 (ja) | 2009-09-30 | 2014-03-19 | 株式会社日立製作所 | 半導体装置と接続構造及びその製造方法 |
JP2011198674A (ja) * | 2010-03-23 | 2011-10-06 | Mitsubishi Electric Corp | 導電性接合材料、これを用いた半導体装置および半導体装置の製造方法 |
US10369667B2 (en) * | 2012-03-05 | 2019-08-06 | Namics Corporation | Sintered body made from silver fine particles |
JP6070092B2 (ja) | 2012-11-12 | 2017-02-01 | 三菱マテリアル株式会社 | パワーモジュール及びパワーモジュールの製造方法 |
JP2014170864A (ja) * | 2013-03-05 | 2014-09-18 | Ibiden Co Ltd | 接合体およびその製造方法 |
CN106133894B (zh) * | 2014-04-04 | 2018-11-16 | 京瓷株式会社 | 热固化性树脂组合物、半导体装置及电气电子部件 |
EP3217456B1 (en) * | 2014-11-04 | 2020-05-06 | Mitsubishi Chemical Corporation | Porous electrode substrate, membrane/electrode assembly using same, and solid polymer fuel cell using same |
JP6739988B2 (ja) * | 2015-04-30 | 2020-08-12 | 積水化学工業株式会社 | 基材粒子、基材粒子の製造方法、導電性粒子、導電材料及び接続構造体 |
JP2018524415A (ja) * | 2015-05-08 | 2018-08-30 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 焼結可能フィルムおよびペーストおよびその使用方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2004076043A (ja) * | 2002-08-12 | 2004-03-11 | Sumitomo Electric Ind Ltd | セラミックス−金属系複合材料及びその製造方法 |
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