JPWO2018143410A1 - 超音波接合装置、超音波接合検査方法および超音波接合部の製造方法 - Google Patents
超音波接合装置、超音波接合検査方法および超音波接合部の製造方法 Download PDFInfo
- Publication number
- JPWO2018143410A1 JPWO2018143410A1 JP2018566124A JP2018566124A JPWO2018143410A1 JP WO2018143410 A1 JPWO2018143410 A1 JP WO2018143410A1 JP 2018566124 A JP2018566124 A JP 2018566124A JP 2018566124 A JP2018566124 A JP 2018566124A JP WO2018143410 A1 JPWO2018143410 A1 JP WO2018143410A1
- Authority
- JP
- Japan
- Prior art keywords
- joining
- bonding
- ultrasonic
- waveform
- detection signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 289
- 238000007689 inspection Methods 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000005304 joining Methods 0.000 claims abstract description 398
- 238000001514 detection method Methods 0.000 claims abstract description 167
- 230000008569 process Effects 0.000 claims abstract description 93
- 238000003825 pressing Methods 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims description 102
- 238000004364 calculation method Methods 0.000 claims description 53
- 238000012544 monitoring process Methods 0.000 claims description 39
- 230000008859 change Effects 0.000 claims description 18
- 238000005259 measurement Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000001902 propagating effect Effects 0.000 claims description 8
- 239000000047 product Substances 0.000 description 108
- 239000004065 semiconductor Substances 0.000 description 78
- 238000010586 diagram Methods 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 238000006073 displacement reaction Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 13
- 239000010949 copper Substances 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 230000006866 deterioration Effects 0.000 description 9
- 239000013067 intermediate product Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B3/00—Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H17/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves, not provided for in the preceding groups
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H3/00—Measuring characteristics of vibrations by using a detector in a fluid
- G01H3/04—Frequency
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/14—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object using acoustic emission techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/44—Processing the detected response signal, e.g. electronic circuits specially adapted therefor
- G01N29/4409—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by comparison
- G01N29/4436—Processing the detected response signal, e.g. electronic circuits specially adapted therefor by comparison with a reference signal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/12—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to investigating the properties, e.g. the weldability, of materials
- B23K31/125—Weld quality monitoring
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H5/00—Measuring propagation velocity of ultrasonic, sonic or infrasonic waves, e.g. of pressure waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/02—Indexing codes associated with the analysed material
- G01N2291/028—Material parameters
- G01N2291/0289—Internal structure, e.g. defects, grain size, texture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2291/00—Indexing codes associated with group G01N29/00
- G01N2291/26—Scanned objects
- G01N2291/269—Various geometry objects
- G01N2291/2697—Wafer or (micro)electronic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Acoustics & Sound (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Signal Processing (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
図1は本発明の実施の形態1による超音波接合装置を示す図であり、図2は図1の接合状態判定装置のブロック図である。図3は図1の電力用半導体装置の上面図であり、図4は図3の電力用半導体装置の側面図である。図5は、図3のA−A断面における電力用半導体装置の断面図である。図6は図5における第一の超音波接合部の拡大断面図であり、図7は図5における第二の超音波接合部の拡大断面図である。図8は接合良好時のAE信号波形の例を示す図であり、図9は接合不良時のAE信号波形の例を示す図である。図10は、本発明の実施の形態1による接合工程の第一例を示すフローチャートである。図11は、図1の他の接合状態判定装置のブロック図である。図12は接合良好時の演算処理波形の例を示す図であり、図13は接合不良時の演算処理波形の例を示す図である。図14は図1の超音波接合装置による超音波印加条件の第一例を示す図である。
本発明の実施の形態2の超音波接合装置50を説明する。実施の形態2の超音波接合装置50は、接合状態測定装置31が実施の形態1と異なっている。図23は、本発明の実施の形態2による接合状態測定装置を示す図である。実施の形態2の超音波接合装置50は、接合状態測定装置31以外は同じなので、接合状態測定装置31について説明する。
実施の形態3では、実施の形態1又は実施の形態2の超音波接合装置及び超音波接合検査法を、製品(電力用半導体装置1)における接続ワイヤ15を接合するワイヤボンド装置と、接合された超音波接合部であるワイヤ接合部を検査するワイヤ接合検査方法に適用する例を説明する。ワイヤボンド装置は超音波振動による圧着により、被接合対象物(被接合部材に相当)にワイヤ(接続部材に相当)を接合する装置である。ワイヤは、直径100〜500μmのAlや直径10〜50μmのAu、Agからなる。概略の構成や検出信号sig1の分析、検出信号sig1に基づく装置へのフィードバック方法は実施の形態1に示す超音波接合装置50とほぼ同様である。周波数には実施の形態1又は実施の形態2の超音波接合装置50の超音波接合機20よりも高い40〜120kHzが用いられる。振幅は実施の形態1又は実施の形態2の超音波接合機20よりも小さい1〜5μm程度である。すなわち、ワイヤボンド装置に用いる周波数が高く、振幅が小さい。このように周波数が高く、小さい振幅の超音波による被接合部材と接合部材(接続ワイヤ15)との接合部の振動を検出するためには、AE信号が好適である。実施の形態3の超音波接合装置50であるワイヤボンド装置は、例えば、図5に示した接続ワイヤ15a、15b、15cを被接合部材(配線パターン10a、10b、10d、IGBT12の電極、FwDi13の電極)に超音波接合する。
実施の形態3では、実施の形態1又は実施の形態2の超音波接合装置及び超音波接合検査法を、製品(電力用半導体装置1)における接続ワイヤ15を接合するワイヤボンド装置と、接合された超音波接合部であるワイヤ接合部を検査するワイヤ接合検査方法に適用する例を説明する。ワイヤボンド装置は超音波振動による圧着により、被接合対象物(被接合部材に相当)にワイヤ(接合部材に相当)を接合する装置である。ワイヤは、直径100〜500μmのAlや直径10〜50μmのAu、Agからなる。概略の構成や検出信号sig1の分析、検出信号sig1に基づく装置へのフィードバック方法は実施の形態1に示す超音波接合装置50とほぼ同様である。周波数には実施の形態1又は実施の形態2の超音波接合装置50の超音波接合機20よりも高い40〜120kHzが用いられる。振幅は実施の形態1又は実施の形態2の超音波接合機20よりも小さい1〜5μm程度である。すなわち、ワイヤボンド装置に用いる周波数が高く、振幅が小さい。このように周波数が高く、小さい振幅の超音波による被接合部材と接合部材(接続ワイヤ15)との接合部の振動を検出するためには、AE信号が好適である。実施の形態3の超音波接合装置50であるワイヤボンド装置は、例えば、図5に示した接続ワイヤ15a、15b、15cを被接合部材(配線パターン10a、10b、10d、IGBT12の電極、FwDi13の電極)に超音波接合する。
Claims (20)
- 被接合部材と接合部材とを超音波を用いて接合する超音波接合装置であって、
治具に固定された被固定物に実装された前記被接合部材に、前記接合部材を押圧しながら前記超音波を印加する超音波ツールを有する超音波接合機と、
前記被接合部材と前記接合部材との接合品質を検査する接合検査装置とを備え、
前記接合検査装置は、
前記治具または前記治具が搭載された前記超音波接合機の筐体における前記被接合部材及び前記接合部材に接することがない位置に固定されると共に前記治具または前記筐体を伝搬する振動を検出するセンサにより前記振動を検出して、検出信号を出力する接合状態測定装置と、
前記被接合部材と前記接合部材との接合工程において、前記接合状態測定装置により出力された前記検出信号に基づいて、前記被接合部材と前記接合部材との接合状態を判定する接合状態判定装置とを備えたことを特徴とする超音波接合装置。 - 前記センサは前記治具に固定されており、
前記接合状態測定装置は、前記治具を伝搬する振動を検出することを特徴とする請求項1記載の超音波接合装置。 - 前記振動はアコースティックエミッションであり、
前記接合状態測定装置は、前記アコースティックエミッションを検出する前記センサであるAEセンサを備えたことを特徴とする請求項1または2に記載の超音波接合装置。 - 前記接合状態測定装置は、前記超音波により振動する被測定物の振動を検出する非接触振動計を更に備えたことを特徴とする請求項1から3のいずれか1項に記載の超音波接合装置。
- 前記非接触振動計は、前記被接合部材、前記接合部材、前記超音波ツール、前記治具の少なくとも1つの振動を検出して、検出信号を出力することを特徴とする請求項4記載の超音波接合装置。
- 前記接合状態判定装置は、
前記被接合部材と前記接合部材とを接合する超音波接合条件にて前記接合工程を予め実行して、前記被接合部材と前記接合部材との接合状態が良いと判定された場合において前記接合状態測定装置により予め測定された基準検出信号の波形と、
前記接合工程において前記接合状態測定装置により測定された前記検出信号の波形と、に基づいて、前記被接合部材と前記接合部材との接合状態を判定することを特徴とする請求項1から5のいずれか1項に記載の超音波接合装置。 - 前記接合状態判定装置は、
前記被接合部材と前記接合部材とを接合する超音波接合条件にて前記接合工程を予め実行して、前記被接合部材と前記接合部材との接合状態が良いと判定された場合において前記接合状態測定装置により予め測定された基準検出信号の波形を数値演算処理した基準演算処理波形と、
前記接合工程において前記接合状態測定装置により測定された前記検出信号の波形を数値演算処理した演算処理波形と、に基づいて、前記被接合部材と前記接合部材との接合状態を判定することを特徴とする請求項1から5のいずれか1項に記載の超音波接合装置。 - 前記接合状態判定装置は、
前記被接合部材と前記接合部材とを接合する超音波接合条件にて前記接合工程を予め実行して、前記被接合部材と前記接合部材との接合状態が良いと判定された場合において前記接合状態測定装置により予め測定された基準検出信号の波形及び前記基準検出信号の波形を数値演算処理した基準演算処理波形と、
前記接合工程において前記接合状態測定装置により測定された前記検出信号の波形及び前記検出信号の波形を数値演算処理した演算処理波形と、に基づいて、前記被接合部材と前記接合部材との接合状態を判定することを特徴とする請求項1から5のいずれか1項に記載の超音波接合装置。 - 前記接合状態判定装置は、
前記基準検出信号の波形である基準波形及び前記検出信号の波形である検出波形を生成する信号処理部を備えることを特徴とする請求項6記載の超音波接合装置。 - 前記接合状態判定装置は、
前記基準検出信号の波形である基準波形及び前記検出信号の波形である検出波形を生成する信号処理部と、
前記基準波形を数値演算処理した前記基準演算処理波形及び前記検出波形を数値演算処理した前記演算処理波形を生成する演算処理部を備えることを特徴とする請求項7または8に記載の超音波接合装置。 - 前記超音波接合機は、前記接合状態判定装置に判定された判定結果に基づいて、前記接合工程における超音波接合条件を変更して、前記被接合部材と前記接合部材とを接合することを特徴とする請求項1から10のいずれか1項に記載の超音波接合装置。
- 被接合部材と接合部材とを超音波を用いて接合された接合部の接合品質を検査する超音波接合検査方法であって、
前記被接合部材は、治具に固定された被固定物に実装されており、
前記被接合部材と前記接合部材との接合工程において、前記治具または前記治具が搭載された超音波接合機の筐体を伝搬する振動を検出して、検出信号を出力する検出信号モニター手順と、
前記検出信号モニター手順にて出力された前記検出信号に基づいて、前記被接合部材と前記接合部材との接合状態を判定する接合状態判定手順とを含むことを特徴とする超音波接合検査方法。 - 前記検出信号モニター手順において、前記振動を前記被接合部材及び前記接合部材に接することがない位置にて検出することを特徴とする請求項12記載の超音波接合検査方法。
- 前記検出信号モニター手順において、更に、前記被接合部材、前記接合部材、前記超音波を印加する超音波ツールの少なくとも1つの振動を非接触で検出して、検出信号を出力することを特徴とする請求項12または13に記載の超音波接合検査方法。
- 前記接合状態判定手順において、
前記被接合部材と前記接合部材とを接合する超音波接合条件にて前記接合工程を予め実行して、前記被接合部材と前記接合部材との接合状態が良いと判定された場合において予め測定された基準検出信号の波形と、
測定された前記検出信号の波形と、に基づいて、前記被接合部材と前記接合部材との接合状態を判定することを特徴とする請求項12から14のいずれか1項に記載の超音波接合検査方法。 - 前記接合状態判定手順において、
前記被接合部材と前記接合部材とを接合する超音波接合条件にて前記接合工程を予め実行して、前記被接合部材と前記接合部材との接合状態が良いと判定された場合において予め測定された基準検出信号の波形を数値演算処理した基準演算処理波形を生成し、
測定された前記検出信号の波形を数値演算処理した演算処理波形を生成し、
前記基準演算処理波形と前記演算処理波形とに基づいて、前記被接合部材と前記接合部材との接合状態を判定することを特徴とする請求項12から14のいずれか1項に記載の超音波接合検査方法。 - 前記接合状態判定手順において、
前記被接合部材と前記接合部材とを接合する超音波接合条件にて前記接合工程を予め実行して、前記被接合部材と前記接合部材との接合状態が良いと判定された場合において予め測定された基準検出信号の波形と、測定された前記検出信号の波形とを生成し、
前記基準検出信号の波形を数値演算処理した基準演算処理波形を生成し、
前記検出信号の波形を数値演算処理した演算処理波形を生成し、
前記基準検出信号の波形及び前記基準演算処理波形と、前記検出信号の波形及び前記演算処理波形とに基づいて、前記被接合部材と前記接合部材との接合状態を判定することを特徴とする請求項12から14のいずれか1項に記載の超音波接合検査方法。 - 前記接合部材は金属の接続ワイヤであり、
前記接合工程は、超音波接合機の超音波ツールにより前記被接合部材及び前記接合部材に印加する前記超音波の印加周波数を高くする印加周波数変更手順を含んでおり、
前記接合状態判定手順において、
測定された前記検出信号の波形から演算した周波数波形を生成し、
前記周波数波形における周波数が変化するタイミングと、前記印加周波数変更手順における前記印加周波数が変化するタイミングとの差が予め定められた判定値よりも大きい場合に、前記接合状態が悪いと判定し、
前記周波数波形における周波数が変化するタイミングと、前記印加周波数変更手順における前記印加周波数が変化するタイミングとの差が予め定められた判定値以下の場合に、前記接合状態が良いと判定することを特徴とする請求項12または13に記載の超音波接合検査方法。 - 被接合部材と接合部材とを超音波を用いて接合する超音波接合部を製造する超音波接合部の製造方法であって、
治具に固定された被固定物に実装された前記被接合部材に、前記接合部材を押圧しながら前記超音波を印加して前記超音波接合部を形成する接合工程を含み、
前記接合工程は、
請求項12から17のいずれか1項に記載の超音波接合検査方法における前記検出信号モニター手順及び前記接合状態判定手順と、
前記接合状態判定手順において、前記被接合部材と前記接合部材との接合状態が悪いと判定された場合に、前記被接合部材と前記接合部材との超音波接合条件が変更可能かを判定し、前記超音波接合条件が変更可能な場合に、前記被接合部材と前記接合部材との前記超音波接合条件を変更する接合条件変更手順と、
前記接合条件変更手順が実行された場合に、前記接合条件変更手順にて変更された超音波接合条件にて、前記検出信号モニター手順及び前記接合状態判定手順を実行する接合継続手順と、
前記接合状態判定手順において、前記被接合部材と前記接合部材との接合状態が良いと判定された場合に、前記被接合部材と前記接合部材とに対する作業中の当該接合工程を終了する接合良好終了手順と、
前記接合条件変更手順において、前記超音波接合条件が変更不可能と判定された場合に、前記被接合部材と前記接合部材とに対する作業中の当該接合工程を終了する接合不良終了手順と、を含むことを特徴とする超音波接合部の製造方法。 - 被接合部材と接合部材とを超音波を用いて接合する超音波接合部を製造する超音波接合部の製造方法であって、
前記接合部材は金属の接続ワイヤであり、
治具に固定された被固定物に実装された前記被接合部材に、前記接合部材を押圧しながら前記超音波を印加して前記超音波接合部を形成する接合工程を含み、
前記接合工程は、
超音波接合機の超音波ツールにより前記被接合部材及び前記接合部材に印加する前記超音波の印加周波数を高くする印加周波数変更手順と、
請求項12または13に記載の超音波接合検査方法における前記検出信号モニター手順及び前記接合状態判定手順と、
前記接合状態判定手順において、前記被接合部材と前記接合部材との接合状態が悪いと判定された場合に、前記被接合部材と前記接合部材との超音波接合条件が変更可能かを判定し、前記超音波接合条件が変更可能な場合に、前記被接合部材と前記接合部材との前記超音波接合条件を変更する接合条件変更手順と、
前記接合条件変更手順が実行された場合に、前記接合条件変更手順にて変更された超音波接合条件にて、前記検出信号モニター手順及び前記接合状態判定手順を実行する接合継続手順と、
前記接合状態判定手順において、前記被接合部材と前記接合部材との接合状態が良いと判定された場合に、前記被接合部材と前記接合部材とに対する作業中の当該接合工程を終了する接合良好終了手順と、
前記接合条件変更手順において、前記超音波接合条件が変更不可能と判定された場合に、前記被接合部材と前記接合部材とに対する作業中の当該接合工程を終了する接合不良終了手順と、を含み、
前記接合状態判定手順において、
測定された前記検出信号の波形から演算した周波数波形を生成し、
前記周波数波形における周波数が変化するタイミングと、前記印加周波数変更手順における前記印加周波数が変化するタイミングとの差が予め定められた判定値よりも大きい場合に、前記接合状態が悪いと判定し、
前記周波数波形における周波数が変化するタイミングと、前記印加周波数変更手順における前記印加周波数が変化するタイミングとの差が予め定められた判定値以下の場合に、前記接合状態が良いと判定することを特徴とする超音波接合部の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017018138 | 2017-02-03 | ||
JP2017018138 | 2017-02-03 | ||
PCT/JP2018/003605 WO2018143410A1 (ja) | 2017-02-03 | 2018-02-02 | 超音波接合装置、超音波接合検査方法および超音波接合部の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018143410A1 true JPWO2018143410A1 (ja) | 2019-11-07 |
JP6742448B2 JP6742448B2 (ja) | 2020-08-19 |
Family
ID=63039858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018566124A Active JP6742448B2 (ja) | 2017-02-03 | 2018-02-02 | 超音波接合装置、超音波接合検査方法および超音波接合部の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11631653B2 (ja) |
JP (1) | JP6742448B2 (ja) |
CN (1) | CN110235232B (ja) |
DE (1) | DE112018000674T5 (ja) |
WO (1) | WO2018143410A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017104615A1 (de) * | 2017-03-06 | 2018-09-06 | Auto-Kabel Management Gmbh | Ultraschallschweißvorrichtung und Verfahren zum Ultraschallschweißen |
KR102242248B1 (ko) * | 2017-05-02 | 2021-04-20 | 주식회사 엘지화학 | 이차전지의 용접 검사장치 및 검사방법 |
JP7035923B2 (ja) * | 2018-09-10 | 2022-03-15 | 株式会社Sumco | インゴットのvノッチ評価方法、インゴットのvノッチ加工方法、およびインゴットのvノッチ評価装置 |
CN113728227A (zh) * | 2019-04-17 | 2021-11-30 | Dmc全球公司 | 识别多层制品中健全结合和薄弱结合之间结合边界的方法和系统 |
WO2020241092A1 (ja) * | 2019-05-30 | 2020-12-03 | 株式会社島津製作所 | 管状体の接合部の検査方法及び装置 |
JP7488656B2 (ja) * | 2019-09-19 | 2024-05-22 | 株式会社東芝 | ワイヤボンディング装置及びワイヤボンディング方法 |
CN110726888B (zh) * | 2019-09-23 | 2021-11-16 | 深圳市开玖自动化设备有限公司 | 一种超声波引线键合设备的超声异常检测方法及装置 |
US11305373B2 (en) * | 2019-10-30 | 2022-04-19 | Raytheon Company | Ultrasonic additively manufactured coldplates on heat spreaders |
JP7347235B2 (ja) * | 2020-01-24 | 2023-09-20 | 日本軽金属株式会社 | 液冷ジャケットの製造方法及び摩擦攪拌接合方法 |
KR20220160553A (ko) * | 2020-03-29 | 2022-12-06 | 쿨리케 앤드 소파 인더스트리즈, 인코포레이티드 | 와이어 본딩 머신 상의 지지 구조에 대한 반도체 소자의 클램핑 최적화 방법, 및 관련된 방법 |
CN114341658A (zh) * | 2020-08-04 | 2022-04-12 | 雅马哈智能机器控股株式会社 | 导线接合状态判定方法及导线接合状态判定装置 |
CN112505146A (zh) * | 2020-11-26 | 2021-03-16 | 电子科技大学 | 一种基于超声波反射的igbt模块焊线断裂检测方法 |
KR102420874B1 (ko) * | 2020-12-17 | 2022-07-15 | 한국생산기술연구원 | 셀프 피어싱 리벳 체결 품질의 모니터링 방법과 셀프 피어싱 리벳 체결 공정 및 이를 위한 설비 시스템 |
CN116830260A (zh) * | 2021-02-12 | 2023-09-29 | 日本发条株式会社 | 电路基板以及制造方法 |
US20220299227A1 (en) * | 2021-03-18 | 2022-09-22 | Research Products Corporation | System and method for nebulizer failure detection |
CN114354749B (zh) * | 2021-12-29 | 2024-02-13 | 长江存储科技有限责任公司 | 键合界面缺陷检测方法及装置 |
CN114290685B (zh) * | 2021-12-30 | 2024-02-06 | 上海骄成超声波技术股份有限公司 | 一种超声波发生器和超声波系统 |
DE102022209769A1 (de) | 2022-09-16 | 2024-03-21 | Robert Bosch Gesellschaft mit beschränkter Haftung | Computerimplementiertes verfahren zur aktualisierung von software in einer vorrichtung zur mitigation von softwaremanipulation |
DE102023134724A1 (de) | 2022-12-14 | 2024-06-20 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Verfahren und Vorrichtung zum Evaluieren eines Ultraschallschweißens |
CN117454155B (zh) * | 2023-12-26 | 2024-03-15 | 电子科技大学 | 基于ssaf和emd的igbt声发射信号提取方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05115986A (ja) * | 1991-10-25 | 1993-05-14 | Furukawa Electric Co Ltd:The | 超音波溶接のモニタ方法 |
JPH0735668A (ja) * | 1993-07-16 | 1995-02-07 | Toshiba Tungaloy Co Ltd | 超音波振動式疲労試験機 |
JPH10260164A (ja) * | 1997-03-18 | 1998-09-29 | Nippon Steel Corp | レーザー超音波検査装置 |
JPH11197854A (ja) * | 1998-01-20 | 1999-07-27 | Olympus Optical Co Ltd | 超音波溶着装置及び超音波溶着装置における溶着状態 検査方法 |
JP2004047944A (ja) * | 2002-05-22 | 2004-02-12 | Nec Corp | 接合装置および接合の良否判別方法を有する接合方法 |
JP2004058523A (ja) * | 2002-07-30 | 2004-02-26 | Ricoh Co Ltd | 超音波接合方法及び超音波接合装置 |
JP2013191716A (ja) * | 2012-03-14 | 2013-09-26 | Hitachi Ltd | SiC素子搭載パワー半導体モジュール |
JP2016119374A (ja) * | 2014-12-19 | 2016-06-30 | 富士通株式会社 | ワイヤボンディング装置およびワイヤボンディング方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001127112A (ja) * | 1999-10-25 | 2001-05-11 | Fujitsu Ltd | 半導体チップボンディング方法および装置 |
WO2010113250A1 (ja) | 2009-03-31 | 2010-10-07 | トヨタ自動車株式会社 | 接合品質検査装置及び接合品質検査方法 |
JP5143873B2 (ja) | 2010-08-06 | 2013-02-13 | 三菱電機エンジニアリング株式会社 | 超音波接合制御装置及び超音波接合制御方法 |
JP2012083246A (ja) | 2010-10-13 | 2012-04-26 | Toyota Motor Corp | 接合検査方法 |
CN102856149A (zh) * | 2011-06-27 | 2013-01-02 | 东京毅力科创株式会社 | 异常检测装置和异常检测方法 |
-
2018
- 2018-02-02 CN CN201880007190.6A patent/CN110235232B/zh active Active
- 2018-02-02 DE DE112018000674.3T patent/DE112018000674T5/de active Pending
- 2018-02-02 JP JP2018566124A patent/JP6742448B2/ja active Active
- 2018-02-02 US US16/478,218 patent/US11631653B2/en active Active
- 2018-02-02 WO PCT/JP2018/003605 patent/WO2018143410A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05115986A (ja) * | 1991-10-25 | 1993-05-14 | Furukawa Electric Co Ltd:The | 超音波溶接のモニタ方法 |
JPH0735668A (ja) * | 1993-07-16 | 1995-02-07 | Toshiba Tungaloy Co Ltd | 超音波振動式疲労試験機 |
JPH10260164A (ja) * | 1997-03-18 | 1998-09-29 | Nippon Steel Corp | レーザー超音波検査装置 |
JPH11197854A (ja) * | 1998-01-20 | 1999-07-27 | Olympus Optical Co Ltd | 超音波溶着装置及び超音波溶着装置における溶着状態 検査方法 |
JP2004047944A (ja) * | 2002-05-22 | 2004-02-12 | Nec Corp | 接合装置および接合の良否判別方法を有する接合方法 |
JP2004058523A (ja) * | 2002-07-30 | 2004-02-26 | Ricoh Co Ltd | 超音波接合方法及び超音波接合装置 |
JP2013191716A (ja) * | 2012-03-14 | 2013-09-26 | Hitachi Ltd | SiC素子搭載パワー半導体モジュール |
JP2016119374A (ja) * | 2014-12-19 | 2016-06-30 | 富士通株式会社 | ワイヤボンディング装置およびワイヤボンディング方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6742448B2 (ja) | 2020-08-19 |
CN110235232B (zh) | 2023-04-07 |
US11631653B2 (en) | 2023-04-18 |
CN110235232A (zh) | 2019-09-13 |
WO2018143410A1 (ja) | 2018-08-09 |
US20200035642A1 (en) | 2020-01-30 |
DE112018000674T5 (de) | 2019-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6742448B2 (ja) | 超音波接合装置、超音波接合検査方法および超音波接合部の製造方法 | |
EP1469319B1 (en) | Flip-chip mounting method and mounting apparatus of electronic part | |
Or et al. | Ultrasonic wire-bond quality monitoring using piezoelectric sensor | |
JP3276421B2 (ja) | 制御システム | |
JP4546576B2 (ja) | バンプ接合判定装置及び方法、並びに半導体部品製造装置及び方法 | |
US7819013B2 (en) | Method and apparatus for measuring oscillation amplitude of an ultrasonic device | |
US6962281B2 (en) | Bonding apparatus and bonding method having process for judging bonding state | |
JP2012083246A (ja) | 接合検査方法 | |
JPH0574874A (ja) | 金属細線の超音波接合方法および装置 | |
JP6664300B2 (ja) | ワイヤボンディング良否判定装置およびワイヤボンディング良否判定方法 | |
CN1138257C (zh) | 用超声焊接法将磁头ic芯片装在悬浮件上的磁盘装置的磁头组件 | |
JP2008084881A (ja) | 電子装置の製造方法およびその検査方法 | |
Brokelmann et al. | Bond process monitoring via self-sensing piezoelectric transducers | |
JP2000137026A (ja) | 異常検査方法およびワイヤボンディング装置の接合良否検査システム | |
Arjmand et al. | Methodology for identifying wire bond process quality variation using ultrasonic current frequency spectrum | |
TWI771750B (zh) | 導線接合裝置及導線接合方法 | |
JPH0230819B2 (ja) | ||
KR101991786B1 (ko) | 초음파 접합 모니터링 장치 및 그 방법 | |
JP2001127112A (ja) | 半導体チップボンディング方法および装置 | |
GB2270868A (en) | Wire bonding control system. | |
JPH07335700A (ja) | ボンディング方法及び装置 | |
Guo et al. | Ultrasonic characterization of the interface between a die attach adhesive and a copper leadframe in IC packaging | |
JP3912361B2 (ja) | ワイヤボンディング装置 | |
JP2010267864A (ja) | はんだ接合の検査装置及びはんだ接合の検査方法 | |
JP2023006251A (ja) | ボンディング装置、制御方法、および、制御システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190524 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190524 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200324 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200518 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20200518 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200630 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200728 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 6742448 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |