JPWO2018135270A1 - 試料保持具 - Google Patents
試料保持具 Download PDFInfo
- Publication number
- JPWO2018135270A1 JPWO2018135270A1 JP2018563253A JP2018563253A JPWO2018135270A1 JP WO2018135270 A1 JPWO2018135270 A1 JP WO2018135270A1 JP 2018563253 A JP2018563253 A JP 2018563253A JP 2018563253 A JP2018563253 A JP 2018563253A JP WO2018135270 A1 JPWO2018135270 A1 JP WO2018135270A1
- Authority
- JP
- Japan
- Prior art keywords
- heater
- layer
- conduction
- region
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 206010037660 Pyrexia Diseases 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 230000020169 heat generation Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N2001/002—Devices for supplying or distributing samples to an analysing apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
- H05B2203/003—Heaters using a particular layout for the resistive material or resistive elements using serpentine layout
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Abstract
Description
11,111:試料保持面
12,112:第1層
13,113:第2層
14:第3層
2,102:第1ヒータ
3,103:第2ヒータ
4,104:導通部
41:第1部分
42:第2部分
5,105:スルーホール導体
106:接続部
107:第3ヒータ
108:第2接続部
109:第2導通部
10,110:試料保持具
Claims (8)
- 円形状の一方の主面および他方の主面を有し、順に位置する第1層、第2層および第3層を有するセラミック基板と、前記第1層および前記第2層の間に設けられた第1ヒータと、前記第2層および前記第3層の間に設けられた、第2ヒータおよび該第2ヒータに接続された導通部とを備えており、
平面透視したときに、前記第2ヒータが前記第1ヒータおよび前記導通部を囲む環状を有しており、
前記導通部が前記一方の主面の周方向に伸びる部分と径方向に伸びる部分とを有する試料保持具。 - 前記導通部のうち前記周方向に伸びる部分は、第1部分と第2部分とを有しており、
前記第1部分は、第1仮想円の円周上に位置しており、前記第2部分は、第2仮想円の円周上に位置しており、前記第1仮想円と前記第2仮想円とは、同心円である請求項1に記載の試料保持具。 - 前記導通部が、前記第2ヒータに囲まれる部位における全体に設けられている請求項1または請求項2に記載の試料保持具。
- 前記導通部の厚みが前記第2ヒータの厚みよりも小さい請求項1乃至請求項3のいずれかに記載の試料保持具。
- 円形状の一方の主面および他方の主面を有し、第1層および第2層を有するセラミック基板と、前記第1層および前記第2層の間に設けられた、第1ヒータおよび該第1ヒータを囲む環状を有する第2ヒータと、該第2ヒータに接続されて前記他方の主面に引き出された接続部と、前記他方の主面において一端が前記接続部に接続され他端が前記一端よりも前記他方の主面の中心側に設けられた導通部とを備えており、
該導通部が前記一方の主面の周方向に伸びる部分と径方向に伸びる部分とを有する試料保持具。 - 平面透視したときに、前記第2ヒータが設けられている領域と前記導通部が設けられている領域とが同じである請求項5に記載の試料保持具。
- 平面透視したときに、前記導通部は、前記第2ヒータが設けられている領域のうち外周と内周との中間よりも中心側であって、前記第1ヒータが設けられている領域の全体に重なる領域に設けられている請求項5に記載の試料保持具。
- 平面透視したときに、前記第1ヒータが設けられている領域と前記導通部が設けられている領域とが同じである請求項7に記載の試料保持具。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017007203 | 2017-01-19 | ||
JP2017007203 | 2017-01-19 | ||
JP2017207379 | 2017-10-26 | ||
JP2017207379 | 2017-10-26 | ||
PCT/JP2017/046917 WO2018135270A1 (ja) | 2017-01-19 | 2017-12-27 | 試料保持具 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018135270A1 true JPWO2018135270A1 (ja) | 2019-11-07 |
JP6871277B2 JP6871277B2 (ja) | 2021-05-12 |
Family
ID=62909098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018563253A Active JP6871277B2 (ja) | 2017-01-19 | 2017-12-27 | 試料保持具 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20190342952A1 (ja) |
JP (1) | JP6871277B2 (ja) |
WO (1) | WO2018135270A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11339939A (ja) * | 1998-05-29 | 1999-12-10 | Kyocera Corp | セラミックヒータ |
JP2010177595A (ja) * | 2009-01-30 | 2010-08-12 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置 |
JP2016225016A (ja) * | 2015-05-27 | 2016-12-28 | 日本特殊陶業株式会社 | 加熱装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1274280A1 (en) * | 2000-04-14 | 2003-01-08 | Ibiden Co., Ltd. | Ceramic heater |
US9984866B2 (en) * | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
-
2017
- 2017-12-27 JP JP2018563253A patent/JP6871277B2/ja active Active
- 2017-12-27 US US16/476,889 patent/US20190342952A1/en not_active Abandoned
- 2017-12-27 WO PCT/JP2017/046917 patent/WO2018135270A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11339939A (ja) * | 1998-05-29 | 1999-12-10 | Kyocera Corp | セラミックヒータ |
JP2010177595A (ja) * | 2009-01-30 | 2010-08-12 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウエハ保持体、及びそれを備えた半導体製造装置 |
JP2016225016A (ja) * | 2015-05-27 | 2016-12-28 | 日本特殊陶業株式会社 | 加熱装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6871277B2 (ja) | 2021-05-12 |
WO2018135270A1 (ja) | 2018-07-26 |
US20190342952A1 (en) | 2019-11-07 |
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