JPWO2018101065A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JPWO2018101065A1 JPWO2018101065A1 JP2018553768A JP2018553768A JPWO2018101065A1 JP WO2018101065 A1 JPWO2018101065 A1 JP WO2018101065A1 JP 2018553768 A JP2018553768 A JP 2018553768A JP 2018553768 A JP2018553768 A JP 2018553768A JP WO2018101065 A1 JPWO2018101065 A1 JP WO2018101065A1
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- 230000004907 flux Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 13
- 238000005259 measurement Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 230000008569 process Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (6)
- チャンバを提供するチャンバ本体と、
前記チャンバ内に処理ガスを供給するガス供給部と、
前記チャンバ内に配置されたステージと、
前記チャンバ内の空間を介して前記ステージに対面する円形の表面を有する上部電極と、
前記上部電極に接続する導体と、
100MHz以上1000MHz以下の周波数の第1の高周波を発生させる高周波電源であり、前記導体を介して前記上部電極に接続された該高周波電源と、
前記第1の高周波よりも低い周波数の第2の高周波、又は、直流バイアスを前記上部電極に印加するバイアス電源と、
前記上部電極の前記表面の外縁に沿って延在する環状の絶縁リングと、
前記第1の高周波に基づいて前記導体の周囲で生じる電磁波を伝播する導波路であり、前記上部電極の外側において前記絶縁リングに接続する該導波路と、
前記上部電極に印加される前記第2の高周波又は前記直流バイアスを制御する制御部と、
を備えるプラズマ処理装置。 - 前記チャンバ本体は側壁を有し、
前記側壁には、前記チャンバ本体の中心軸線周りに環状に延在し、前記ステージと前記側壁との間を伝播する電磁波を抑制するチョーク部が設けられている、請求項1に記載のプラズマ処理装置。 - 前記チョーク部は、前記チャンバ本体の経方向に沿って延びる第1の部分と、前記中心軸線と平行な方向に沿って延びる第2の部分とを有している、請求項2に記載のプラズマ処理装置。
- 前記第1の部分の前記経方向に沿った長さと前記第2の部分の前記平行な方向に沿った長さとの和は、前記ステージと前記側壁との間を伝播する電磁波を打ち消すような長さに設定されている、請求項3に記載のプラズマ処理装置。
- 前記上部電極には、前記空間から前記上部電極に向かう熱流束に応じたパラメータを検出する複数のセンサ設けられており、
前記複数のセンサは、前記上部電極の径方向の異なる位置に配置され、
前記制御部は、前記複数のセンサの検出結果に基づいて前記第2の高周波又は前記直流バイアスを制御する、
請求項1〜4の何れか一項に記載のプラズマ処理装置。 - 前記上部電極は、
冷媒用の流路が形成された本体部と、
前記本体部の下方に配置されたシャワープレートであり、前記表面を有し、且つ、複数のガス吐出孔が形成された該シャワープレートと、
を含み、
前記複数のセンサの各々は、前記本体部と前記シャワープレートとの間の温度差に応じた出力信号を出力し、
前記制御部は、前記出力信号に基づいて前記第2の高周波又は前記直流バイアスを制御する、
請求項5に記載のプラズマ処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016232471 | 2016-11-30 | ||
JP2016232471 | 2016-11-30 | ||
PCT/JP2017/041305 WO2018101065A1 (ja) | 2016-11-30 | 2017-11-16 | プラズマ処理装置 |
Publications (2)
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JPWO2018101065A1 true JPWO2018101065A1 (ja) | 2019-10-24 |
JP6846776B2 JP6846776B2 (ja) | 2021-03-24 |
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Country Status (5)
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US (1) | US11443927B2 (ja) |
JP (1) | JP6846776B2 (ja) |
KR (1) | KR102159894B1 (ja) |
TW (1) | TWI724258B (ja) |
WO (1) | WO2018101065A1 (ja) |
Families Citing this family (7)
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JP7336378B2 (ja) * | 2019-12-16 | 2023-08-31 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP7454407B2 (ja) * | 2020-03-02 | 2024-03-22 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP7458292B2 (ja) | 2020-10-20 | 2024-03-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2022110697A (ja) * | 2021-01-19 | 2022-07-29 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP2022110695A (ja) * | 2021-01-19 | 2022-07-29 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
KR20230008604A (ko) | 2021-07-07 | 2023-01-16 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
JP2024030859A (ja) * | 2022-08-25 | 2024-03-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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JP2000357683A (ja) * | 1999-04-14 | 2000-12-26 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2002237483A (ja) * | 2001-02-07 | 2002-08-23 | Hitachi Ltd | プラズマ処理装置 |
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JP2014179576A (ja) * | 2013-02-12 | 2014-09-25 | Hitachi High-Technologies Corp | プラズマ処理装置の制御方法 |
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JPH07142449A (ja) | 1993-11-22 | 1995-06-02 | Kawasaki Steel Corp | プラズマエッチング装置 |
JP3224011B2 (ja) | 1996-05-23 | 2001-10-29 | シャープ株式会社 | プラズマ励起化学蒸着装置及びプラズマエッチング装置 |
JP4584565B2 (ja) * | 2002-11-26 | 2010-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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JP5213150B2 (ja) * | 2005-08-12 | 2013-06-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法 |
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- 2017-11-16 JP JP2018553768A patent/JP6846776B2/ja active Active
- 2017-11-16 WO PCT/JP2017/041305 patent/WO2018101065A1/ja active Application Filing
- 2017-11-16 KR KR1020197015349A patent/KR102159894B1/ko active IP Right Grant
- 2017-11-16 US US16/464,812 patent/US11443927B2/en active Active
- 2017-11-29 TW TW106141545A patent/TWI724258B/zh active
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JP2000357683A (ja) * | 1999-04-14 | 2000-12-26 | Hitachi Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP2002237483A (ja) * | 2001-02-07 | 2002-08-23 | Hitachi Ltd | プラズマ処理装置 |
JP2007281205A (ja) * | 2006-04-07 | 2007-10-25 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2009205921A (ja) * | 2008-02-27 | 2009-09-10 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法 |
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JP2013012650A (ja) * | 2011-06-30 | 2013-01-17 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2014179576A (ja) * | 2013-02-12 | 2014-09-25 | Hitachi High-Technologies Corp | プラズマ処理装置の制御方法 |
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US20190295828A1 (en) | 2019-09-26 |
TWI724258B (zh) | 2021-04-11 |
TW201833983A (zh) | 2018-09-16 |
WO2018101065A1 (ja) | 2018-06-07 |
US11443927B2 (en) | 2022-09-13 |
KR102159894B1 (ko) | 2020-09-24 |
JP6846776B2 (ja) | 2021-03-24 |
KR20190073510A (ko) | 2019-06-26 |
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