JPWO2018078956A1 - 検出器 - Google Patents
検出器 Download PDFInfo
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- JPWO2018078956A1 JPWO2018078956A1 JP2018547117A JP2018547117A JPWO2018078956A1 JP WO2018078956 A1 JPWO2018078956 A1 JP WO2018078956A1 JP 2018547117 A JP2018547117 A JP 2018547117A JP 2018547117 A JP2018547117 A JP 2018547117A JP WO2018078956 A1 JPWO2018078956 A1 JP WO2018078956A1
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- 238000001514 detection method Methods 0.000 claims abstract description 52
- 230000005855 radiation Effects 0.000 claims abstract description 19
- 238000012545 processing Methods 0.000 description 13
- 238000012937 correction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000001788 irregular Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000005260 alpha ray Effects 0.000 description 1
- 230000005250 beta ray Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T7/00—Details of radiation-measuring instruments
- G01T7/005—Details of radiation-measuring instruments calibration techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Abstract
Description
(検出システムの構成)
図1は、検出システム10の構成の一例を示す概略図である。図1に示すように検出システム10は、放射線源20、試料S、検出器100およびデータ処理装置500で構成されている。
図2は、検出器100およびデータ処理装置500の機能的な構成を示すブロック図である。検出器100は、例えばX線を検出するフォトンカウンティング方式のハイブリッドピクセルアレイ型の2次元半導体検出器である。ただし、2次元半導体検出器に限らず、1次元半導体検出器であってもよい。検出器100は、単一の検出モジュール105で構成されていてもよいが、複数の検出モジュール105を備えていることが好ましい。検出モジュール105は、検出部110、読み出しチップ120を備えている。
図3(a)は、検出部および読み出しチップを示す背面図である。図3(a)に示すように、検出部110の複数のピクセル115は、2次元的にアレイ化されており、一律の形状で原則規則的に配列されている。ただし、一部のピクセル115は形状や位置が不規則であってもよい。図3(a)に示す例では、検出部110に対して、矩形板状の読み出しチップ120がタイリングされており、隣り合う読み出しチップ120の互いの縁間にはわずかな空隙122が設けられている。
図4は、ピクセル115と計数回路121の配置例を示す背面図である。図4に示すように、各ピクセル115に対して、読み出しチップ120内の計数回路121が設けられ、ピクセル115と計数回路121とが接続部130により接続されている。ピクセル115で放射線を検出したときの信号は接続部130で接続された固別に割り当てられた計数回路121に入り、計数される。
上記の実施形態では、接続部130が規則的に配置されているが、必ずしも規則的に配置されている必要はない。図7は、読み出しチップ220全体にわたって計数回路221および接続部230の配置例を示す背面図である。図5に示す配置例に比べると図7に示す配置例では、ピクセル215と計数回路221のサイズの差が小さい。そのため、互いの重複領域を十分広く確保できるため、接続部230の配置の自由度が大きくなる。したがって、図7に示すように接続部230の不規則な配置も可能になる。
20 放射線源
S 試料
100 検出器
105 検出モジュール
110 検出部
115、215 ピクセル
120、220 読み出しチップ
121a 分別回路
121b カウンタ部
121、121−1、221 計数回路
122 空隙
125 カウンタ読み出し回路
126 読み出し用パッド
127 バイア構造
130、130−1、230 接続部
500 データ処理装置
Claims (6)
- 放射線を検出する2次元ハイブリッドピクセルアレイ型の検出器であって、
各ピクセルで領域内に入射した放射線を検出する検出部と、
前記ピクセル毎に接続された計数回路を含む複数の読み出しチップと、を備え、
検出面上の一定方向に沿って、前記ピクセルより前記計数回路の方が、設定ピッチが小さく、前記ピクセルと前記ピクセルに対応する計数回路の互いに占める領域が少なくとも部分的に重複し、
前記重複する領域内で前記接続がなされていることを特徴とする検出器。 - 前記複数の読み出しチップにおいて、隣の読み出しチップの縁に対向する自読み出しチップの縁に最も近い計数回路と前記ピクセルとの接続位置が前記縁側の領域にあることを特徴とする請求項1記載の検出器。
- 前記読み出しチップにおいて、前記ピクセルと前記計数回路との接続位置が線対称または点対称に分布していることを特徴とする請求項1または請求項2記載の検出器。
- 前記ピクセルの形状は、矩形であることを特徴とする請求項1から請求項3のいずれかに記載の検出器。
- 隣り合う前記読み出しチップの縁間の距離は、30μm以上であることを特徴とする請求項1から請求項4のいずれかに記載の検出器。
- 前記計数回路から端子側への接続は、バイア構造であることを特徴とする請求項1から請求項5のいずれかに記載の検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016210863 | 2016-10-27 | ||
JP2016210863 | 2016-10-27 | ||
PCT/JP2017/024611 WO2018078956A1 (ja) | 2016-10-27 | 2017-07-05 | 検出器 |
Publications (2)
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JPWO2018078956A1 true JPWO2018078956A1 (ja) | 2019-09-12 |
JP6877772B2 JP6877772B2 (ja) | 2021-05-26 |
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JP2018547117A Active JP6877772B2 (ja) | 2016-10-27 | 2017-07-05 | 検出器 |
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US (1) | US11049897B2 (ja) |
EP (1) | EP3534403B1 (ja) |
JP (1) | JP6877772B2 (ja) |
CN (1) | CN109891589B (ja) |
WO (1) | WO2018078956A1 (ja) |
Families Citing this family (3)
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JP6877772B2 (ja) | 2016-10-27 | 2021-05-26 | 株式会社リガク | 検出器 |
JP7083403B2 (ja) | 2018-04-20 | 2022-06-10 | エーエスエムエル ネザーランズ ビー.ブイ. | 広アクティブ領域高速検出器のピクセル形状及びセクション形状の選択 |
CN112885855B (zh) * | 2021-01-15 | 2022-05-17 | 核芯光电科技(山东)有限公司 | 一种集成前置放大电路的深硅探测器模块 |
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JP6877772B2 (ja) | 2016-10-27 | 2021-05-26 | 株式会社リガク | 検出器 |
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2017
- 2017-07-05 JP JP2018547117A patent/JP6877772B2/ja active Active
- 2017-07-05 EP EP17865346.5A patent/EP3534403B1/en active Active
- 2017-07-05 CN CN201780066527.6A patent/CN109891589B/zh active Active
- 2017-07-05 US US16/341,964 patent/US11049897B2/en active Active
- 2017-07-05 WO PCT/JP2017/024611 patent/WO2018078956A1/ja unknown
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JP2002198509A (ja) * | 2000-12-26 | 2002-07-12 | Mitsubishi Electric Corp | 固体撮像装置及び固体撮像装置におけるラインセンサ |
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EP2463908A2 (en) * | 2010-12-10 | 2012-06-13 | Samsung Electronics Co., Ltd. | Wafer-scale x-ray detector and method of manufacturing the same |
JP2012185159A (ja) * | 2011-03-04 | 2012-09-27 | Samsung Electronics Co Ltd | 大面積x線検出器 |
US20160015339A1 (en) * | 2014-07-15 | 2016-01-21 | Siemens Aktiengesellschaft | Imaging device for electromagnetic radiation |
US20160097864A1 (en) * | 2014-10-07 | 2016-04-07 | Terapede Systems Inc. | 3d high resolution x-ray sensor with integrated scintillator grid |
WO2016161543A1 (en) * | 2015-04-07 | 2016-10-13 | Shenzhen Xpectvision Technology Co., Ltd. | Methods of making semiconductor x-ray detector |
Also Published As
Publication number | Publication date |
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US20190245000A1 (en) | 2019-08-08 |
EP3534403A4 (en) | 2020-05-20 |
JP6877772B2 (ja) | 2021-05-26 |
EP3534403A1 (en) | 2019-09-04 |
CN109891589B (zh) | 2023-06-02 |
WO2018078956A1 (ja) | 2018-05-03 |
CN109891589A (zh) | 2019-06-14 |
US11049897B2 (en) | 2021-06-29 |
EP3534403B1 (en) | 2021-09-15 |
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