569030 Α7 Β7 五、發明説明（i) 【發明領域】 (請先閲讀背面之注意事項再填寫本頁) 本發明係關於檢測由被檢體放射的放射線，進行檢測 對象部位的畫像顯示的情形等所利用的放射線晝像檢測裝 置。 【發明背景】 【習知技藝之說明】 檢測醫療用伽瑪照相機（Gamma camera )所代表的具 有特定能量的放射線之放射線畫像檢測裝置，是藉由分別 令放射有具有其特定能量的放射線的位置與其放射線的數 目爲單色的濃度差或色相差而顯示於畫面，可看見具有前 述特定能量的放射線的分布狀態。 而且，藉由具有這種特定能量的放射線進行畫像檢測 的放射線畫像檢測裝置習知以來是提供使用閃爍器（ Scintillator ) ( N a I結晶）與光電子倍增管（p Μ 丁） ，暫時將由對象物放射的放射線變換成可視光，將此可視 光變換以及放大爲電子。 經濟部智慧財產局員工消費合作社印製 但是，使用這種大規模高價的光電子倍增管等的放射 線畫像檢測裝置因前述光電子倍增管爲大形，除了所得到 的畫像的分解能低，或者因由放射線變換成可視光以及由 可視光變換成電子使訊號的檢測感度降低外，也有容易招 致來自周邊部的不需要的放射線的入侵，無法進行精度高 的放射線畫像的顯示的情況不佳。 另一方面相對於此，可提供使用可小形輕量化，可提 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210Χ297公釐） -4- 569030 A7 _ B7 五、發明説明（3 (請先閱讀背面之注意事項再填寫本頁) 高畫像分解能並且可直接變換放射線成電氣訊號的半導體 放射線檢測元件之放射線畫像檢測裝置。這種放射線畫像 檢測裝置因使用半導體放射線檢測元件，故由可製造的元 件尺寸上的制約，使用複數個元件以確保有效視野面積。 而且，因將複數個排列的半導體放射線檢測元件的每 一各像素（Pixel )的放射線資訊變換成電氣訊號而檢測， 故爲以該像素單位進行訊號的取出以及訊號處理。另一方 面，來自半導體放射線檢測元件的訊號微小，爲了防止訊 號劣化，儘可能在半導體放射線檢測元件的的附近實施前 述訊號處理較佳。 但是，前述半導體放射線檢測元件爲了提高放射線晝 像的分解能，通常像素被分割成數百到數千，除了由各像 素對訊號處理電路的連接電路數龐大，包含訊號處理電路 的單位畫像檢測器的緊緻化（Compactification)變的困難 外，也有無法避免因各半導體放射線檢測元件間的無訊號 區（Dead space )所造成的放射線畫像的分解能的劣化的 問題。 經濟部智慧財產局員工消費合作社印製 而且，有當計測特定能量的放射線數目時，自半導體 放射線檢測器傳送除去相當於雜訊（Noise )的低能量成分 的所有的放射線的能量資訊到畫像構成部，由於採用在此 晝像構成部側選別特定能量的放射線而計測的方法，在半 導體放射線檢測器與前述畫像構成部之間，由能量資訊傳 送速度上以及在畫像構成部的畫像資料處理速度上的制約 ，特定能量的放射線計數效率以及放射線畫像顯示效率降 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 569030 A7 B7 五、發明説明（$ 低的問題。 本發明的目的是解決如前述的問題，提供藉由令半導 體放射線檢測元件與具有放射線的能量的檢測、計數功肯g 之訊號處理電路爲一個單位畫像檢測器而一體化，可使全 體構成緊緻化，並且消除排列複數個單位畫像檢測器的情 形中的無訊號區（Dead space )的產生，可以高感度檢測 分解能高的放射線畫像之小形輕量的放射線畫像檢測裝置 〇 爲了達成前述目的，依照本發明的放射線畫像檢測裝 置，其特徵爲： 在放射線檢測用半導體晶圓的放射線入射面具有共通 電極，在他方具備： 具有像素單位的訊號輸出用的訊號電極的單陣列型半 導體放射線檢測元件；以及 接合於該單陣列型半導體放射線檢測元件，處理來自 該訊號電極的輸出訊號成使放射線畫像化的訊號，輸出到 訊號引出墊的訊號處理電路。 據此，可減小畫像檢測單位，可以小形輕量且緊緻的 構成實現畫像分解能的提高與藉由放射線的直接電氣訊號 變換所造成的畫像化訊號的檢測感度的提高。 如果依照本發明的一實施形態，該訊號處理電路對四 角形的該單陣列型半導體放射線檢測元件以同一寬度，且 長長地形成有該訊號引出墊份，令接合該訊號處理電路與 該單陣列型半導體放射線檢測元件者爲單位畫像檢測器， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 裝· 、11 經濟部智慧財產局員工消費合作社印製 -6 - 569030 A7 _____B7 五、發明説明（4 (請先閲讀背面之注意事項再填寫本頁) 此單位畫像檢測器的兩個是使與該訊號引出墊側相對側的 邊相互無間隙地對接，以對接的兩個單位畫像檢測器爲一 組，依次對接這些複數組於未配設有訊號引出墊的側面， 並設於基板上而成。據此，可去除單位畫像檢測器彼此的 間隙，可防止藉由由複數個單位畫像檢測器所構成的放射 線畫像檢測裝置所造成的放射線檢測畫像的分解能的降低 ，並且藉由增加或減少並設的單位畫像檢測器的組數，可 形成任意尺寸的放射線畫像檢測裝置。 如果依照本發明的其他實施形態，形成該單陣列型半 導體放射線檢測元件的半導體是C d T e或C d Ζ η T e 或H g I 2。據此，即使單位元件小也能高感度地檢測放射 線。 如果依照本發明的再其他實施形態，該單陣列型半導 體放射線檢測元件的尺寸爲短邊5 m m以上5 0 m m以下 ，長邊1 0mm以上1 0 〇mm以下，厚度〇 . 5mm以 上1 0 m m以下。即使是這種小的尺寸範圍，實用的使用 也可能，可得到預期的畫像分解能。 經濟部智慧財產局員工消費合作社印製 如果依照本發明的再其他實施形態，該單陣列型半導 體放射線檢測元件的訊號電極的間距（Pitch)爲〇 . 2 m m以上2 · 5 m m以下。據此，不使接鄰的電極彼此干 涉，可將來自各像素單位的電極的訊號取出導出到訊號處 理電路。 如果依照本發明的再其他實施形態，該訊號處理電路 具有計測特定能量的放射線數的功能。據此，可高感度測 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X 297公釐） 569030 A7 B7 五、發明説明（9 定來自被檢體的特定的放射線能量的分布。 如果依照本發明的再其他實施形態，該訊號處理電路 具有分別計測複數個特定能量的放射線數的功能。據此， 可高感度測定來自被檢體的複數部的放射線能量的分布。 如果依照本發明的再其他實施形態，該放射線畫像檢 測裝置具有令以該訊號處理電路計測的每一各像素的特定 能量的放射線數爲單色的濃度差或色相差而進行畫像化處 理的畫像構成部。據此，可明瞭地使來自被檢體的具有特 定能量的放射線的分布狀態晝像顯示化於畫像顯示部。 如果依照本發明的再其他實施形態，該放射線畫像檢 測裝置具有令自診斷對象放射，以該訊號處理電路計測的 每一各像素的特定能量的放射線數爲單色的濃度差或色相 差而進行畫像化處理，爲醫療診斷利用。據此，可明瞭地 使來自被檢體的人體等的具有特定能量的放射線的分布狀 態畫像顯示於晝像顯示部。 【圖式之簡單說明】 圖1是顯示依照本發明的一實施形態的放射線畫像檢 測裝置的單位畫像檢測器的側面圖。 圖2是圖1所示的單位晝像檢測器的前視圖。 圖3是顯示本發明的放射線畫像檢測裝置的前視圖。 圖4是圖3所示的放射線畫像檢測裝置的側面圖。。 圖5是顯示圖1中的訊號處理電路的內部電路的方塊 圖0 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝.569030 Α7 Β7 V. Description of the invention (i) [Field of invention] (Please read the precautions on the back before filling out this page) The present invention relates to the detection of radiation emitted by a subject and the display of an image of the detection target part, etc. Radiation day image detection device used. [Background of the Invention] [Explanation of the know-how] A radiographic image detection device that detects radiation with a specific energy represented by a medical gamma camera (Gamma camera) is used to separately irradiate positions with radiation having a specific energy. The number of radiations is displayed on the screen as the density difference or hue of a single color, and the distribution state of the radiation having the aforementioned specific energy can be seen. In addition, conventionally, a radiographic image detection device that performs image detection with radiation having such a specific energy has conventionally provided the use of a scintillator (N a I crystal) and a photoelectron multiplier tube (p Μ 丁). The emitted radiation is converted into visible light, and this visible light is converted and amplified into electrons. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, the use of such large-scale and expensive photomultiplier tubes and other radiographic image detection devices is large because the photomultiplier tubes described above are large, except that the resulting image has low resolution energy or is subject to radiation conversion In addition to visible light and conversion of visible light into electrons, the detection sensitivity of the signal is reduced, and unwanted radiation intrusion from the peripheral part is likely to be caused, and it is not possible to display a radiographic image with high accuracy. On the other hand, it can provide small size and light weight, and the paper size can be applied to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -4- 569030 A7 _ B7 V. Description of the invention (3 (Please Read the precautions on the back before filling in this page) A radiation image detection device for semiconductor radiation detection devices that have high image resolution and can directly convert radiation into electrical signals. This type of radiation image detection device uses semiconductor radiation detection devices, so it can be manufactured Due to the limitation on the size of the device, a plurality of components are used to ensure an effective field of view. Furthermore, since the radiation information of each pixel (Pixel) of the plurality of arrayed semiconductor radiation detection devices is converted into an electrical signal for detection, it is based on This pixel unit performs signal extraction and signal processing. On the other hand, the signal from the semiconductor radiation detection element is small. In order to prevent signal degradation, it is better to perform the aforementioned signal processing near the semiconductor radiation detection element as much as possible. However, the aforementioned semiconductor In order to improve the radiation detection element The resolution of the daytime radiographic image is usually divided into hundreds to thousands of pixels. In addition to the large number of connection circuits of the signal processing circuit by each pixel, it is difficult to compact the unit image detector including the signal processing circuit. In addition, there is also a problem that degradation of the decomposition energy of a radiographic image due to a dead space between semiconductor radiation detection elements cannot be avoided. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs When the number of radiations is emitted, the energy information of all radiations excluding the low-energy components equivalent to noise is transmitted from the semiconductor radiation detector to the image forming section. The measurement is performed by selecting radiation with a specific energy at the side of the day image forming section. Method, between the semiconductor radiation detector and the aforementioned image forming section, the speed of energy information transmission and the processing speed of the image data of the image forming section are restricted, the radiation counting efficiency of a specific energy and the radiation image display efficiency are reduced. Standard applicable to China Standard (CNS) A4 specification (210X297 mm) 569030 A7 B7 V. Description of the invention (the problem of low $. The object of the present invention is to solve the aforementioned problems and provide detection by making semiconductor radiation detection elements and energy with radiation The signal processing circuit for counting power is integrated as a unit image detector, which can make the overall structure compact, and eliminate the generation of a dead space in the case of arranging a plurality of unit image detectors. A small and lightweight radiation image detection device that can detect radiation images with high resolution with high sensitivity. In order to achieve the aforementioned object, the radiation image detection device according to the present invention is characterized in that the radiation incident surface of the semiconductor wafer for radiation detection has a common feature. An electrode provided elsewhere includes: a single-array semiconductor radiation detection element having a signal electrode for signal output in a pixel unit; and a single-array semiconductor radiation detection element bonded to the single-array semiconductor radiation detection element and processing the output signal from the signal electrode to image the radiation Signal, output to signal lead-out pad Signal processing circuit. As a result, the image detection unit can be reduced, and a small, lightweight, and compact structure can be used to improve the resolution of the image and increase the detection sensitivity of the imaged signal caused by the direct electrical signal conversion of radiation. According to an embodiment of the present invention, the signal processing circuit has the same width as the single-array semiconductor radiation detection element in a quadrangular shape, and the signal lead-out pad is formed long, so that the signal processing circuit and the single array are joined. The type of semiconductor radiation detection element is the unit image detector. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back before filling this page). Printed by the Bureau's Consumer Cooperatives-6-569030 A7 _____B7 V. Description of the invention (4 (Please read the precautions on the back before filling out this page) The two image detectors of this unit are on the opposite side to the signal lead-out pad side The two sides are docked without any gap, and the two unit image detectors are docked as a group, and these complex arrays are sequentially docked on the side without a signal lead-out pad and arranged on the substrate. According to this, the unit can be removed The gap between the image detectors can prevent the image detectors caused by the radiation image detection device composed of a plurality of unit image detectors. By reducing the resolution of the radiographic image, and by increasing or decreasing the number of unit image detectors provided in parallel, a radiation image detecting device of any size can be formed. According to other embodiments of the present invention, the single-array semiconductor is formed. The semiconductor of the radiation detection element is C d T e or C d Zn η T e or H g I 2. Accordingly, even if the unit element is small, radiation can be detected with high sensitivity. According to still another embodiment of the present invention, the single element The size of the array-type semiconductor radiation detection element is 5 mm or more and 50 mm or less on the short side, 10 mm or more and 100 mm or less on the long side, and 0.5 mm or more and 10 mm or less in thickness. Even this small size range is practical It is also possible to obtain the expected image resolution. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. According to still other embodiments of the present invention, the pitch (Pitch) of the signal electrodes of the single-array semiconductor radiation detection element is 0. 2 mm or more and 2 · 5 mm or less. This allows the electricity from each pixel unit to be prevented from interfering with adjacent electrodes. The signal is taken out and exported to a signal processing circuit. According to still another embodiment of the present invention, the signal processing circuit has a function of measuring the number of radiations of a specific energy. Based on this, the paper can be measured with high sensitivity to the Chinese National Standard (CNS) A4 specification (21 × X 297 mm) 569030 A7 B7 V. Description of the invention (9 determines the specific radiation energy distribution from the subject. If according to still another embodiment of the present invention, the signal processing circuit has a plurality of measuring complex numbers respectively. The function of the number of radiations of a specific energy. According to this, the distribution of the radiation energy from a plurality of parts of a subject can be measured with high sensitivity. According to still another embodiment of the present invention, the radiation image detection device has a signal processing based on the signal. The number of radiations of a specific energy measured by the circuit for each pixel is an image forming section that performs image processing for a monochrome density difference or hue difference. As a result, a day image of the distribution state of radiation with a specific energy from the subject can be clearly displayed on the image display section. According to still another embodiment of the present invention, the radiographic image detection device has a self-diagnostic object to be radiated, and the number of radiations with a specific energy of each pixel measured by the signal processing circuit is performed as a monochrome density difference or a hue difference. Image processing for medical diagnosis. This makes it possible to clearly display a distribution image of radiation having a specific energy from the human body or the like of the subject on the day image display section. [Brief Description of the Drawings] Fig. 1 is a side view showing a unit image detector of a radiation image detection apparatus according to an embodiment of the present invention. FIG. 2 is a front view of the unit day image detector shown in FIG. 1. FIG. FIG. 3 is a front view showing a radiographic image detection apparatus of the present invention. FIG. 4 is a side view of the radiation image detection apparatus shown in FIG. 3. . Figure 5 is a block diagram showing the internal circuit of the signal processing circuit in Figure 1. 0 This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 mm) (Please read the precautions on the back before filling this page)- Installed.
、1T 經濟部智慧財產局員工消費合作社印製 -8 - 569030 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（@ 圖6是顯示包含畫像顯示部的放射線畫像檢測裝置的 全體的方塊圖。 【符號說明】 1 :單位畫像檢測器 2:半導體放射線檢測元件 3 :共通電極 4 :訊號電極 5 :訊號處理電路 6 ·_訊號引出墊 7 :基板 8 :打線接合連接 1 1 :前置放大器 1 2 :主放大器 1 3 :第一比較器 1 4 :第二比較器 1 5 :計數器電路 1 6 :被測定對象物 1 7 :準直儀 1 8 :放射線畫像檢測裝置 1 9 :畫像構成部 2 0 :畫像顯示部 【較佳實施例之詳細說明】 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 569030 A7 B7 五、發明説明（力 圖1以及圖2是顯示構成本發明的放射線畫像檢測裝 置的單位畫像檢測器1的側面圖以及前視圖。在同圖中， 參考符號2是顯示四角形的單陣列（Monolithic array )型 半導體放射線檢測元件（以下稱爲半導體放射線檢測元件 )，此爲在放射線檢測用半導體晶圓的放射線入射面具有 共通電極3，在他方具有各像素單位的訊號輸出用的訊號 電極4。 此外，半導體放射線檢測元件2的半導體是使用r射 線的檢測感度高的C d T e、C d Ζ η T e、H g I 2，例 如短邊5mm以上5 Omm以下，長邊1 〇mm以上 1〇〇mm以下，厚度〇 . 5mm以上10 mm以下的可 作爲實用化的尺寸而被利用。 而且，前述半導體放射線檢測元件2是以像素單位對 訊號處理電路5藉由覆晶接合（Flip chip bond)方式連接 。此外，此半導體放射線檢測元件2與訊號處理電路5如 圖所示互相接合，例如作成縱2 3 m m、橫9 m m的四角 形的單位畫像檢測器1。前述訊號處理電路5在一邊側具 有訊號引出墊6 ，令該訊號引出墊6部分對半導體放射線 檢測元件2露出而藉由前述覆晶接合法直接接合。 而且，此單位畫像檢測器1的兩個是使與前述訊號引 出墊6側相對側的邊相互無間隙地對接，並且以對接的兩 個單位畫像檢測器1爲一組，依次將這些複數組對接於未 配設有該訊號引出墊6的側面，如圖3以及圖4所示，藉 由並設於四角形的基板7上而構成放射線畫像檢測裝置。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 、τ 經濟部智慧財產局員工消費合作社印製 -10- 經濟部智慧財產局員工消費合作社印製 569030 A7 B7 _ 五、發明説明（Θ 此外，圖3以及圖4是顯示排列縱兩片、橫5片的合 計1 0片的單位畫像檢測器1 ，在基板7上打線接合（Printed by 1T Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-8-569030 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Block diagram] [Description of symbols] 1: Unit image detector 2: Semiconductor radiation detection element 3: Common electrode 4: Signal electrode 5: Signal processing circuit 6 _Signal lead-out pad 7: Substrate 8: Wire bonding connection 1 1: Front Amplifier 1 2: Main amplifier 1 3: First comparator 1 4: Second comparator 1 5: Counter circuit 16: Object to be measured 1 7: Collimator 1 8: Radiological image detection device 1 9: Image Constituent section 2 0: Portrait display section [Detailed description of the preferred embodiment] (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -9- 569030 A7 B7 V. Description of the invention (Figures 1 and 2 are a side view and a front view showing the unit image detector 1 constituting the radiation image detection device of the present invention. In the same figure, reference symbols 2 is a monolithic array type semiconductor radiation detection element (hereinafter referred to as a semiconductor radiation detection element) showing a quadrangle. This is a common electrode 3 on the radiation incident surface of a semiconductor wafer for radiation detection, and each pixel unit is located on the other side. Signal electrode 4 for signal output. In addition, the semiconductor of the semiconductor radiation detection element 2 is C d T e, C d Zn η T e, H g I 2 which has high detection sensitivity using r rays, for example, the short side is 5 mm or more 5 Omm or less, long side 10mm or more and 100mm or less, thickness 0.5mm or more and 10 mm or less can be used as a practical size. In addition, the semiconductor radiation detection element 2 is a signal processing circuit in pixel units. 5 is connected by a flip chip bond. In addition, the semiconductor radiation detection element 2 and the signal processing circuit 5 are bonded to each other as shown in the figure, for example, a quadrilateral unit image detection of 2 3 mm in length and 9 mm in width is performed.器 1。 The aforementioned signal processing circuit 5 has a signal lead-out pad 6 on one side, so that the signal lead-out pad 6 partially detects the semiconductor radiation detection element. 2 is exposed and directly bonded by the aforementioned flip-chip bonding method. In addition, the two unit image detectors 1 are the two units that are connected to each other on the opposite sides of the signal lead-out pad 6 side without a gap, and are connected by the two units. The image detector 1 is a group, and these complex arrays are sequentially docked to the side where the signal lead-out pad 6 is not provided, as shown in FIG. 3 and FIG. 4, and a radiation image is formed by being arranged on a quadrangular substrate 7 Detection device. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page), τ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives-10- Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the employee consumer cooperative 569030 A7 B7 _ V. Description of the invention (Θ In addition, Figures 3 and 4 are unit image detectors 1 showing a total of 10 pieces arranged in two vertical and five horizontal rows, and wire bonding on the substrate 7 (
Wire bonding )連接 8，有效視野爲 4 4 m m X 4 5 m m 的放射線畫像檢測裝置的情形。而且，來自各單位畫像檢 測器1的訊號是經由基板7依次供給到外部的畫像構成部 以及畫像顯示部。此外，藉由增減單位畫像檢測器1的對 接數或由複數個單位畫像檢測器所構成的放射線畫像檢測 裝置的組數，可構成任意大小的放射線畫像檢測裝置。 圖5是顯示前述訊號處理電路5的基本方塊圖，在同 圖中參考符號1 1、1 2是顯示進行由半導體放射線檢測 元件2輸出到每一各像素的脈衝訊號（放射線資訊）的波 形整形、檢波以及放大等，變換成依照放射線能量的波高 値的訊號之前置放大器（Pre-amplifier)以及主放大器（ Main amplifier)。而且，參考符號1 3是顯示由主放大器 1 2得到的放射線能量的訊號之中，除去特定能階（ Energy level)以下的訊號之第一比較器（Comparator) ，參考符號1 4是顯示由主放大器1 2得到的放射線能量 的訊號之中，除去特定能階以上的訊號之第二比較器，參 考符號1 5是顯示根據通過第二比較器1 4而得到的特定 能量的資訊，計算像素單位的放射線數的計數器電路（ Counter circuit)。此外，此計數器電路1 5的輸出是輸出 到後段的畫像構成部以及畫像顯示部。 相關的訊號處理電路5每一各像素在前置放大器1 1 以及主放大器1 2中，將由半導體放射線檢測元件2輸出 ^紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） ' (請先閲讀背面之注意事項再填寫本頁)(Wire bonding) Connection 8, a radiation image detection device with an effective field of view of 4 4 m x 4 5 m m. The signals from the unit image detectors 1 are sequentially supplied to the external image formation section and the image display section via the substrate 7. In addition, by increasing or decreasing the number of docking unit image detectors 1 or the number of radiation image detection devices composed of a plurality of unit image detectors, a radiation image detection device of any size can be configured. FIG. 5 is a basic block diagram showing the aforementioned signal processing circuit 5. Reference numerals 1 and 12 in the same figure show waveform shaping of a pulse signal (radiation information) output from the semiconductor radiation detection element 2 to each pixel. , Detection, amplification, etc., are converted into a signal pre-amplifier and a main amplifier according to the wave height of the radiation energy. In addition, reference numeral 13 is a first comparator showing signals of radiation energy obtained by the main amplifier 12 and excluding signals below a specific energy level, and reference numerals 14 and 14 are displayed by a main comparator. Among the radiation energy signals obtained by the amplifier 12, a second comparator excluding signals above a specific energy level is used. The reference numeral 15 is a display of the specific energy information obtained by the second comparator 14 and the pixel unit is calculated. Counter circuit of the number of radiation. The output of this counter circuit 15 is output to the image formation section and the image display section in the subsequent stage. Each pixel of the relevant signal processing circuit 5 will be output by the semiconductor radiation detection element 2 in the preamplifier 1 1 and the main amplifier 12 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210 X297 mm) '( (Please read the notes on the back before filling out this page)
-11 - 569030 A7 B7 五、發明説明（3 的脈衝訊號變換成具有依照放射線能量的波高値之訊號 以預先設定此訊號的上限、下限的臨界値電壓（Threshold (請先閲讀背面之注意事項再填寫本頁) voltage ) Th — L、Th — Η 與比較器 13、14 比較， 僅取出作爲預定位準（Level )範圍內的目的之特定能量資 訊。接著，將藉此所得到的能量資訊傳送到計數器電路 1 5，在這裡計算各像素的放射線數，此各像素的計數結 果經由前述基板7傳送到後述的畫像構成部，判定作爲目 的的放射線的分布狀況，使此放射線的分布狀況的畫像顯 示爲可能。此處因直接在訊號處理電路5內將特定能量的 放射線數傳送到後畫像構成部側，故可提高特定能量的放 射線計數效率。 經濟部智慧財產局員工消費合作社印製 此處，藉由令輸入前述各比較器1 3、1 4的臨界値 電壓爲可變，可使對應各種放射線能量的放射線的分布狀 況畫像化。而且，在主放大器1 2的後段使對前述各比較 器1 3、1 4以及計數器電路1 5並聯，藉由並聯連接各 臨界値電壓不同的比較器以及計數器電路爲一系統份或複 數系統份’可同時或任意地實現兩個以上的能量資訊的放 射線的計測以及放射線的分布狀況的畫像化。 圖6是放射線畫像檢測裝置全體的方塊圖。在同圖中 參考符號1 6是顯示作爲被檢體的人體等的被測定對象物 ’參考符號1 7是顯示將由被測定對象物1 6得到的放射 線對本發明的放射線畫像檢測裝置1 8垂直入射的準直儀 (Collimator)，參考符號1 9是顯示使以放射線晝像檢測 裝置1 8得到的像素單位的放射線數畫像化的畫像構成部 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 569030 A7 B7 五、發明説明（令0 ’參考符號2 0是顯示將晝像化的訊號顯示於顯示器上的 畫像顯示部。 (請先閲讀背面之注意事項再填寫本頁) 在此放射線畫像檢測裝置1 8如前述求出被準直儀 1 7準直的放射線之中具有特定能量的放射線的像素位置 資訊（X軸、Y軸資訊）以及計數資訊（Z軸資訊），將 這些各資訊傳送到畫像構成部1 9。 而且，在畫像構成部1 9根據前述資訊以對所有的像 素被計測的放射線數爲單色的濃度差或色相差進行畫像構 成，可使被測定對象物中的具有特定能量的放射線的分布 狀態畫像化，據此，畫像顯示部2 0畫像顯示其畫像化的 分布狀態。據此，被測定對象物的例如人體的疾患狀況在 畫像顯示部2 0上可明瞭地看見而顯示。 經濟部智慧財產局員工消費合作社印製 如以上如果依照本發明，藉由在放射線檢測用半導體 晶圓的放射線入射面具有共通電極，且在他方配設具有像 素單位的訊號輸出用的訊號電極的單陣列型半導體放射線 檢測元件，與接合於該單陣列型半導體放射線檢測元件， 處理來自該訊號電極的輸出訊號於使放射線畫像化的訊號 ，輸出到訊號引出墊的訊號處理電路，可得到可謀求畫像 檢測單位的小形化，同時以小形輕量且緊緻的構成可實現 畫像分解能的提高與藉由對放射線的電氣訊號的直接變換 所造成的畫像化訊號的檢測感度的提高之功效。 而且，該訊號處理電路對四角形的該單陣列型半導體 放射線檢測元件以同一寬度，且長長地形成有該訊號引出 墊份，令接合該訊號處理電路與該單陣列型半導體放射線 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨〇〆297公釐） -13- 569030 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明（fl 檢測元件者爲單位畫像檢測器，此單位畫像檢測器的兩個 是使與該訊號引出墊側相對側的邊相互無間隙地對接’以 對接的兩個單位畫像檢測器爲一組，依次將這些複數組對 接於未配設有該訊號引出墊的側面，並設於基板上而構成 ，故可獲得可消除單位畫像檢測器間的間隙，可防止藉由 由複數個單位畫像檢測器所構成的放射線畫像檢測裝置所 造成的放射線檢測畫像的分解能的降低，並且藉由增加或 減少並設的單位畫像檢測器的組數，可形成任意尺寸的放 射線畫像檢測裝置之優點。 而且，藉由令該單陣列型半導體放射線檢測元件的半 導體爲CdTe或CdZnTe或Hg 12，即使單位元件 小也能高感度地檢測放射線。再者，因令該單陣列型半導 體放射線檢測元件的尺寸爲短邊5 m m以上5 0 m m以下 ，長邊1 0mm以上1 〇 〇mm以下，厚度0 _ 5mm以 上1 0 m m以下，故即使是這種尺寸範圍也可得到預期的 畫像分解能，使實用的使用爲可能。而且，因令該單陣列 型半導體放射線檢測元件的訊號電極的間距爲〇 · 2 m m 以上2 · 5 m m以下，故不使接鄰的電極彼此干涉，可將 來自各像素單位的電極的訊號取出導出到訊號處理電路。 而且’因該訊號處理電路具有計測特定能量的放射線 數的功能’故可高感度測定來自特定的被檢體中的放射線 能量的分布，再者，因該訊號處理電路具有分別計測複數 個特定能量的放射線數的功能，故可同時高感度測定特定 的被檢體的各部中的放射線能量的分布。而且，因配設令 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) (請先閲讀背面之注意事項再填寫本頁) -14 - 569030 A7 B7 五、發明説明（企 以該訊號處理電路計測的每一各像素的特定能量的放射線 數爲單色的濃度差或色相差而進行畫像化處理的畫像構成 部，故可明瞭地使來自被檢體的具有特定能量的放射線的 分布狀態畫像顯示化於畫像顯示部。 再者，因令自診斷對象放射，以該訊號處理電路計測 的每一各像素的特定能量的放射線數爲單色的濃度差或色 相差而進行畫像化處理，爲醫療診斷利用，故可明瞭地使 來自被檢體的人體等的具有特定能量的放射線的分布狀態 畫像顯示於畫像顯示部。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） -15--11-569030 A7 B7 V. Explanation of the invention (3 The pulse signal is converted into a signal with a wave height according to the radiation energy to set the upper and lower thresholds of this signal in advance (Threshold (Please read the precautions on the back before (Fill in this page) voltage) Th — L, Th — Η Compare with the comparators 13 and 14 to take out only the specific energy information for the purpose within the predetermined level (Level). Then, the energy information obtained by this is transmitted The counter circuit 15 calculates the number of radiation of each pixel, and the count result of each pixel is transmitted to the image formation section described later via the substrate 7 to determine the distribution of the target radiation, and an image of the distribution of the radiation It is displayed as possible. Since the number of radiations of a specific energy is directly transmitted to the rear image forming unit side in the signal processing circuit 5, the radiation counting efficiency of the specific energy can be improved. Printed here by the Consumer Cooperative of Intellectual Property Bureau, Ministry of Economic Affairs By changing the threshold threshold voltage input to each of the comparators 1 3, 1 and 4 above, it is possible to correspond to various amplifiers. The distribution of the radiation of the linear energy is visualized. In addition, the comparators 1 3, 14 and the counter circuit 15 are connected in parallel at the rear stage of the main amplifier 12, and comparators having different threshold voltages are connected in parallel and The counter circuit is a system part or a plurality of system parts. It can simultaneously or arbitrarily realize the measurement of two or more kinds of energy information and the imaging of the distribution of the radiation. Figure 6 is a block diagram of the entire radiation image detection device. The reference numeral 16 in the figure shows a measurement object such as a human body as a test object. The reference symbol 17 shows the accuracy of the normal incidence of the radiation obtained by the measurement object 16 on the radiation image detection device 18 of the present invention. Collimator, reference numeral 19 is an image constituting part that displays the number of radiations in the pixel unit obtained by the daylight image detection device 18. The paper size applies the Chinese National Standard (CNS) A4 standard (210X297 mm). ) -12- 569030 A7 B7 V. Description of the invention (Let 0 'reference symbol 2 0 show the daylight signal on the display (Please read the precautions on the back before filling this page.) Here, the radiation image detection device 18 finds the pixel position of the radiation with a specific energy among the radiation collimated by the collimator 17 as described above. Information (X-axis, Y-axis information), and count information (Z-axis information), and transmit these pieces of information to the image forming section 19. In addition, the image forming section 19 measures the radiation of all pixels based on the foregoing information. The number is a single-color density difference or hue difference for image formation, which can image the distribution state of radiation with a specific energy in the object to be measured. Based on this, the image display unit 20 displays the image-like distribution state. As a result, the condition of the object to be measured, such as a human body, can be clearly seen and displayed on the image display unit 20. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs as described above. According to the present invention, the radiation incident surface of the semiconductor wafer for radiation detection has a common electrode, and a signal electrode for a signal output for a pixel unit is provided elsewhere. A single-array semiconductor radiation detection element and a single-array semiconductor radiation detection element bonded to the single-array semiconductor radiation detection element are used to process the output signal from the signal electrode to a signal for imaging the radiation and output to a signal processing circuit of a signal lead-out pad. The miniaturization of the image detection unit and the small size of the lightweight and compact structure can realize the effect of improving the image decomposition energy and improving the detection sensitivity of the image signal by direct conversion of the electrical signal of radiation. In addition, the signal processing circuit has the same width as the single-array semiconductor radiation detection element in the shape of a quadrangle, and the signal lead-out pad is formed long, so that the signal processing circuit and the single-array semiconductor radiation are connected to the paper. China National Standard (CNS) A4 Specification (2 丨 〇〆297mm) -13- 569030 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (fl The detection element is the unit image detector, this unit The two image detectors are to be docked with the edges on the opposite sides of the signal lead pad side without gaps. The two unit image detectors are docked as a group, and these complex arrays are sequentially docked to the signal that is not equipped with the signal. The side of the pad is drawn out and is provided on the substrate, so that the gap between the unit image detectors can be eliminated, and a radiation detection image caused by a radiation image detection device composed of a plurality of unit image detectors can be prevented. It can reduce the decomposition energy, and can be formed into any size by increasing or decreasing the number of unit image detectors installed in parallel. Advantages of a radiographic image detection device. Furthermore, by making the semiconductor of the single-array semiconductor radiation detection element CdTe, CdZnTe, or Hg 12, the radiation can be detected with high sensitivity even if the unit element is small. Furthermore, the single array The size of the semiconductor radiation detection element is 5 mm to 50 mm on the short side, 10 mm to 100 mm on the long side, and 0 to 5 mm to 10 mm in thickness. Therefore, even this size range can be expected. The resolution of the image makes it possible to use it practically. Moreover, the signal electrodes of this single-array semiconductor radiation detection element have a pitch of 0.2 mm to 2.5 mm, so that adjacent electrodes do not interfere with each other. The signals from the electrodes of each pixel unit can be taken out and exported to a signal processing circuit. Furthermore, 'the signal processing circuit has a function of measuring the number of radiations of a specific energy', so that the radiation energy from a specific subject can be measured with high sensitivity. Distribution, and since the signal processing circuit has a function of measuring the number of radiations of a plurality of specific energies, At the same time, the radiation energy distribution in each part of a specific subject is measured with high sensitivity. Moreover, due to the configuration, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back first) (Fill in this page) -14-569030 A7 B7 V. Description of the invention (The image structure of the image processed by the specific energy radiation or the hue difference of each pixel measured by this signal processing circuit with a specific energy Therefore, the image of the distribution state of radiation with a specific energy from the subject can be clearly displayed on the image display section. Furthermore, since the self-diagnostic object is radiated, each pixel measured by the signal processing circuit is measured. The number of radiation with a specific energy is a single color density difference or hue difference for image processing. It is used for medical diagnosis. Therefore, it is possible to clearly display the image of the distribution state of radiation with a specific energy from the human body such as the subject on the image. Display section. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized to the Chinese National Standard (CNS) A4 (210 X297 mm) -15-