JPWO2018074427A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2018074427A1 JPWO2018074427A1 JP2018546330A JP2018546330A JPWO2018074427A1 JP WO2018074427 A1 JPWO2018074427 A1 JP WO2018074427A1 JP 2018546330 A JP2018546330 A JP 2018546330A JP 2018546330 A JP2018546330 A JP 2018546330A JP WO2018074427 A1 JPWO2018074427 A1 JP WO2018074427A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 230000010355 oscillation Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 14
- 238000009825 accumulation Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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Abstract
Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2013−150000号公報
[特許文献2] 特開2016−092177号公報
Claims (12)
- 第1導電型の半導体基板と、
前記半導体基板内の表面側に設けられた第2導電型のベース領域と、
前記半導体基板の表面から前記ベース領域を貫通して前記半導体基板内に設けられ、ゲート導電部を有する、ゲートトレンチ部と、
前記半導体基板の表面から前記ベース領域を貫通して前記半導体基板内に設けられ、エミッタ電位を有する上部ダミー導電部と、前記上部ダミー導電部の下に位置しゲート電位を有する下部ゲート導電部とを含む、ダミートレンチ部と
を備え、
前記ダミートレンチ部の前記下部ゲート導電部は、前記ゲートトレンチ部の前記ゲート導電部と接続する
半導体装置。 - 前記半導体基板の表面において、複数の前記ゲートトレンチ部と複数の前記ダミートレンチ部とが、前記半導体装置のトランジスタ部に設けられ前記ベース領域を有するメサ領域を囲んでいる
請求項1に記載の半導体装置。 - 前記半導体基板の表面において、前記ダミートレンチ部は、
第1方向に延伸する第1の直線部と、
前記第1方向に対して直交する第2方向に延伸する第2の直線部と、
前記第1の直線部と、前記第2の直線部とが交わる交差部と
を有する
請求項2に記載の半導体装置。 - 前記半導体基板の表面において、複数の前記メサ領域は、第1方向および第2方向に直線状に並んで設けられる請求項3に記載の半導体装置。
- 前記半導体基板の表面において、前記半導体装置のトランジスタ部に設けられ前記ベース領域を各々有する複数の前記メサ領域は、
各メサ領域が前記第1方向において直線状に並んで設けられた第1のグループと、
各メサ領域が、前記第1方向において直線状に並んで設けられ、前記第2方向において前記第1のグループに対して最も近く、前記第1のグループの各メサ領域に対して前記第1方向において互いに半周期ずれて設けられた、第2のグループと、
各メサ領域が、前記第1方向において直線状に並んで設けられ、前記第2方向において前記第1のグループに対して2番目に近く、前記第1のグループの各メサ領域に対して前記第2方向において互いに並んで設けられた、第3のグループと
を含む
請求項3に記載の半導体装置。 - 前記ダミートレンチ部は、前記半導体基板の表面において、前記メサ領域の前記第1方向に平行な辺に隣接して設けられ、
前記ゲートトレンチ部は、前記半導体基板の表面において、前記メサ領域の前記第2方向に平行な辺に隣接して設けられる
請求項4または5に記載の半導体装置。 - 前記半導体装置のトランジスタ部に隣接するダイオード部さらに備え、
前記トランジスタ部および前記ダイオード部に設けられた複数の前記ダミートレンチ部の各々は、前記下部ゲート導電部を有する
請求項1から6のいずれか一項に記載の半導体装置。 - 複数の前記ダミートレンチ部のうち少なくとも一つの前記ダミートレンチ部は、前記下部ゲート導電部を有さない
請求項3から6のいずれか一項に記載の半導体装置。 - 前記半導体装置のトランジスタ部に隣接するダイオード部さらに備え、
前記トランジスタ部における複数の前記ダミートレンチ部のうち前記ダイオード部に最も近い複数の前記第2の直線部は、前記第2方向において隣接する第2の直線部同士が互いに連結し、前記下部ゲート導電部を有しない
請求項3から6のいずれか一項に記載の半導体装置。 - 前記ダミートレンチ部の前記下部ゲート導電部は、前記ベース領域よりも下に設けられる
請求項1から9のいずれか一項に記載の半導体装置。 - 前記ダミートレンチ部は、
前記上部ダミー導電部の側部および底部に設けられる上部絶縁膜と、
前記下部ゲート導電部の側部および底部に設けられ、前記上部絶縁膜よりも厚い下部絶縁膜と
を有する
請求項1から10のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記ベース領域よりも下に第1導電型のドリフト領域を有し、
前記ダミートレンチ部の前記上部絶縁膜は、前記ドリフト領域に接触せず、
前記ダミートレンチ部の前記下部絶縁膜は、前記ドリフト領域に接触する
請求項11に記載の半導体装置。
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KR102042832B1 (ko) * | 2018-06-21 | 2019-11-08 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
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US11004945B2 (en) | 2019-05-21 | 2021-05-11 | Infineon Technologies Austria Ag | Semiconductor device with spicular-shaped field plate structures and a current spread region |
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