JPWO2018061697A1 - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 147
- 239000005871 repellent Substances 0.000 claims abstract description 125
- 230000002940 repellent Effects 0.000 claims abstract description 120
- 239000007788 liquid Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 35
- 239000003960 organic solvent Substances 0.000 claims abstract description 19
- 238000001035 drying Methods 0.000 claims abstract description 12
- 230000007246 mechanism Effects 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 230000001846 repelling effect Effects 0.000 abstract description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 264
- 239000000243 solution Substances 0.000 description 33
- 239000012530 fluid Substances 0.000 description 20
- 239000000126 substance Substances 0.000 description 12
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000011084 recovery Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
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- 239000008155 medical solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Abstract
Description
上述した実施形態では、撥水化処理において、第1置換処理後のウェハWに対して室温の撥水化液を供給した後、ウェハWに対し、ウェハWを加熱しながら撥水化液を供給することとした。しかし、撥水化処理の手順は上記の例に限定されない。そこで、以下では、撥水化処理の変形例について図7を参照して説明する。図7は、変形例に係る撥水化処理の説明図である。
1 基板処理システム
4 制御装置
16 処理ユニット
18 制御部
30 基板保持機構
40 処理流体供給部
46a 薬液供給源
46b CDIW供給源
46c 第1IPA供給源
46d 撥水化液供給源
46e 第2IPA供給源
Claims (6)
- 基板に対して水分を含んだ処理液を供給する液処理工程と、
前記液処理工程後の基板に対して第1温度の有機溶剤を供給して前記処理液を置換する第1置換工程と、
前記第1置換工程後の基板に対して撥水化液を供給して前記基板を撥水化させる撥水化工程と、
前記撥水化工程後の基板に対して前記第1温度よりも高い第2温度の有機溶剤を供給して前記撥水化液を置換する第2置換工程と、
前記第2置換工程後の基板から前記有機溶剤を除去する乾燥工程と
を含む、基板処理方法。 - 前記第1温度は、
前記第2温度と比較して前記基板と前記撥水化液との反応を阻害しない温度である、
請求項1に記載の基板処理方法。 - 前記第1温度は、35℃以下の温度であり、
前記第2温度は、60℃以上の温度である、
請求項2に記載の基板処理方法。 - 前記撥水化工程は、
前記撥水化液を供給する第1撥水化工程と、
前記第1撥水化工程後の基板に対し、前記第1撥水化工程において供給される撥水化液よりも高温の撥水化液を供給する第2撥水化工程と
を含む、請求項1〜3のいずれか一つに記載の基板処理方法。 - 前記撥水化工程は、
前記基板を加熱せずに前記撥水化液を供給する第1撥水化工程と、
前記第1撥水化工程後の基板に対し、該基板を加熱しながら前記撥水化液を供給する第2撥水化工程と
を含む、請求項1〜3のいずれか一つに記載の基板処理方法。 - 基板を回転させる回転機構と、
前記基板に対して水分を含んだ処理液を供給する処理液供給部と、
前記処理液を供給した後の前記基板に対して第1温度の有機溶剤を供給する第1有機溶剤供給部と、
前記基板に対して撥水化液を供給して前記基板を撥水化させる撥水化液供給部と、
撥水化された前記基板に対して前記第1温度より高い第2温度の有機溶剤を供給する第2有機溶剤供給部と
を備える、基板処理装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2016194067 | 2016-09-30 | ||
JP2016194067 | 2016-09-30 | ||
PCT/JP2017/032278 WO2018061697A1 (ja) | 2016-09-30 | 2017-09-07 | 基板処理方法および基板処理装置 |
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JPWO2018061697A1 true JPWO2018061697A1 (ja) | 2019-07-04 |
JP6749405B2 JP6749405B2 (ja) | 2020-09-02 |
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US (1) | US20190228963A1 (ja) |
JP (1) | JP6749405B2 (ja) |
KR (1) | KR102414577B1 (ja) |
CN (1) | CN109791886B (ja) |
TW (1) | TW201816843A (ja) |
WO (1) | WO2018061697A1 (ja) |
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JP6967922B2 (ja) * | 2017-09-22 | 2021-11-17 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6946474B2 (ja) * | 2018-01-29 | 2021-10-06 | 東京エレクトロン株式会社 | 基板乾燥装置、基板乾燥方法および記憶媒体 |
Citations (2)
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JP2014197571A (ja) * | 2012-08-28 | 2014-10-16 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP2016001753A (ja) * | 2008-06-16 | 2016-01-07 | 株式会社東芝 | 基板処理装置、基板処理方法及び基板処理液 |
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JP5662081B2 (ja) | 2010-08-20 | 2015-01-28 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2012222329A (ja) * | 2011-04-14 | 2012-11-12 | Tokyo Electron Ltd | 液処理方法及び液処理装置 |
-
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- 2017-09-07 US US16/337,466 patent/US20190228963A1/en not_active Abandoned
- 2017-09-07 CN CN201780060609.XA patent/CN109791886B/zh active Active
- 2017-09-07 KR KR1020197008876A patent/KR102414577B1/ko active IP Right Grant
- 2017-09-07 WO PCT/JP2017/032278 patent/WO2018061697A1/ja active Application Filing
- 2017-09-21 TW TW106132335A patent/TW201816843A/zh unknown
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JP2016001753A (ja) * | 2008-06-16 | 2016-01-07 | 株式会社東芝 | 基板処理装置、基板処理方法及び基板処理液 |
JP2014197571A (ja) * | 2012-08-28 | 2014-10-16 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
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Publication number | Publication date |
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CN109791886A (zh) | 2019-05-21 |
KR20190053866A (ko) | 2019-05-20 |
CN109791886B (zh) | 2023-08-29 |
JP6749405B2 (ja) | 2020-09-02 |
KR102414577B1 (ko) | 2022-06-29 |
US20190228963A1 (en) | 2019-07-25 |
WO2018061697A1 (ja) | 2018-04-05 |
TW201816843A (zh) | 2018-05-01 |
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